Band alignment at epitaxial BaSnO 3 /SrTiO 3 (001) and BaSnO 3 /LaAlO 3 (001) heterojunctions
In this work, we have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO 3 with SrTiO 3 (001) and LaAlO 3 (001). 28 u.c. BaSnO 3 epitaxial films exhibit direct and indirect bandgaps of 3.56 ± 0.05 eV and 2.93 ± 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO 3 films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO 3 than in SrTiO 3 and LaAlO 3 by 0.4 ± 0.2 eV and 3.7 ± 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate at ambient temperature, since electrons generated in the SrTiO 3 by modulation doping, or at the BaSnO 3 /LaAlO 3 interface by polarization doping, can be transferred to and at least partially confined in the BaSnO 3 film.