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At least 703 records · Page 39

Boosting solid oxide fuel cell performance via electrolyte thickness reduction and cathode infiltration

Increasing the power density and reducing the operating temperature of solid oxide fuel cells (SOFCs) is important for improving commercial viability. Here we discuss two strategies for achieving such improvements in Ni–YSZ supported SOFCs – electrolyte thickness reduction and cathode infiltration. Microstructural and electrochemical results are presented showing the effect of reducing YSZ/GDC electrolyte thickness from 8 to 2.5 μm, and the effect of PrO x infiltration into the LSCF–GDC cathode. Both of these measures are effective, particularly at lower temperatures, leading to an increase in the maximum power density at 650 °C from 0.4 to 0.95 W cm –2 , for example. Electrochemical impedance spectroscopy utilizing subtractive analysis shows that PrO x enhances the cathode charge transfer process. Reducing the electrolyte thickness reduces not only the cell ohmic resistance but also the electrode polarization resistance. Furthermore, the latter effect appears to be an artifact associated with a slight increase in the steam partial pressure at the anode due to minor gas leakage across the thinner electrolyte.

25 ENERGY STORAGE↗

Evidence of Reversible Oxidation at CuInSe2 Grain Boundaries

Effects related to alkali metal doping and grain boundaries have puzzled the chalcopyrite photovoltaics community for a long time. This study is the first to report reversible oxidation of grain boundaries in CuInSe2 thin films. The phenomenon is observed in sodium-doped films, but not in undoped ones. Cathodoluminescence imaging, secondary ion mass spectrometry and Kelvin probe force microscopy analyses are performed on CuInSe2 thin films before and after exposure to vacuum. The findings suggest the existence of yet unidentified solid-gas equilibria. Resolving the nature of such reactions will provide new insights into the mechanism of alkali metal doping and passivation in chalcopyrite solar cells.

14 SOLAR ENERGY↗

Optical properties of Mo and amorphous MoOx, and application to antireflection coatings for metals

To form antireflection (AR) coatings to hide metal architecture in display technologies, we deposited thin films of metal Mo and oxide MoOx by sputtering targets of various compositions using pure Ar sputter gas. The optical constants [n,k] of these samples were measured by the direct numerical solution of reflectance and transmittance at each wavelength point measured. We find that 50 nm films are uniform in the growth direction, but for thicker 100 nm samples, evidence exists for nonuniform growth, where the top 20 nm appears to be metal rich. From these [n,k], negative Tauc bandgap energies show these oxides are semi-metals. We then identified the specific composition (x) that optimizes the AR response for a host of metals (Al, Cu, Ag, Au). Finally, two methods were used to understand why these MoOx materials function well as AR media, including (i) using phasor rays and (ii) developing a universal expression for the AR condition that applies to both dielectric and metal substrates. In (i), we find two characteristics for AR of metals: (a) its optical thickness should be roughly π3, not the π2 for dielectrics, since for MoOx, their [r^ij,t^ij] Fresnel phases differ from the usual [180°, 0°] of dielectrics; and (b) the medium incorporates a k-dominant strategy whose function is to absorb the energy that is reflected at the AR/metal interface. In (ii), the universal AR condition is found to be r^01+r^12z^=0. For dielectrics, this reduces to the well-known nAR=nairnsub condition. However, for metals, a concise analytic expression is lacking since this expression is highly nonlinear but is easily solved by numerical methods.

Tsu, David V. (ORCID:0000000295903418)↗

Synthesis and electrical behavior of VO 2 thin films grown on SrRuO 3 electrode layers

VO 2 thin films were grown on conducting oxide underlayer SrRuO 3 buffered SrTiO 3 (111) and Si/SiO 2 substrates, respectively, using sputtering. X-ray diffraction phi-scans revealed the epitaxial nature of the VO 2 films grown on SrRuO 3 buffered SrTiO 3 and polycrystalline structure for films grown on SrRuO 3 buffered Si/SiO 2 . X-ray photoelectron spectroscopy confirms a dominant presence of V 4+ in both films and establishes a high-quality growth of single-phase VO 2 films. Temperature and electric-field driven metal-insulator-transition in both the in-plane and out-of-plane configurations were investigated. Depending on the configuration, the resistance change across the metal-insulator-transition varies from a factor of 1.57–3. The measured resistance in each state as well as the magnitude of resistance change were similar during temperature and electric-field driven metal-insulator-transition. To shed light on the suppressed metal-insulator-transition characteristics due to the current shunting effect from conducting SrRuO 3 bottom electrode, a distributed resistance network model is proposed and benchmarked against reports from the literature. Here, the results demonstrate the growth of high-quality VO 2 on conducting SrRuO 3 layers and their electrical behavior, which is of particular interest for all-oxide electronic devices utilizing phase transitions such as resistive memory and neuromorphic oscillators.

36 MATERIALS SCIENCE↗

Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

To enable greater control over thermal atomic layer deposition (ALD) of molybdenum disulfide (MoS 2 ), here we report studies of the reactions of molybdenum hexafluoride (MoF 6 ) and hydrogen sulfide (H 2 S) with metal oxide substrates from nucleation to few-layer films. In situ quartz crystal microbalance experiments performed at 150, 200, and 250 °C revealed temperature-dependent nucleation behavior of the MoF 6 precursor, which is attributed to variations in surface hydroxyl concentration with temperature. In situ Fourier transform infrared spectroscopy coupled with ex situ x-ray photoelectron spectroscopy (XPS) indicated the presence of molybdenum oxide and molybdenum oxyfluoride species during nucleation. Density functional theory calculations additionally support the formation of these species as well as predicted metal oxide to fluoride conversion. Residual gas analysis revealed reaction by-products, and the combined experimental and computational results provided insights into proposed nucleation surface reactions. With additional ALD cycles, Fourier transform infrared spectroscopy indicated steady film growth after ~13 cycles at 200 °C. XPS revealed that higher deposition temperatures resulted in a higher fraction of MoS 2 within the films. Deposition temperature was found to play an important role in film morphology with amorphous films obtained at 200 °C and below, while layered films with vertical platelets were observed at 250 °C. Finally, these results provide an improved understanding of MoS 2 nucleation, which can guide surface preparation for the deposition of few-layer films and advance MoS 2 toward integration into device manufacturing.

36 MATERIALS SCIENCE↗

Toward high laser power beam manipulation with nanophotonic materials: evaluating thin film damage performance

Nanophotonic materials enable unprecedented control of light-matter interactions, including the ability to dynamically steer or shape wavefronts. Consequently, nanophotonic systems such as metasurfaces have been touted as promising candidates for free-space optical communications, directed energy and additive manufacturing, which currently rely on slow mechanical scanners or electro-optical components for beam steering and shaping. However, such applications necessitate the ability to support high laser irradiances (> kW/cm 2 ) and systematic studies on the high-power laser damage performance of nanophotonic materials and designs are sparse. Here, we experimentally investigate the pulsed laser-induced damage performance (at λ ∼ 1 µm) of model nanophotonic thin films including gold, indium tin oxide, and refractory materials such as titanium nitride and titanium oxynitride. We also model the spatio-thermal dissipation dynamics upon single-pulse illumination by anchoring experimental laser damage thresholds. Our findings show that gold exhibits the best laser damage resistance, but we argue that alternative materials such as transparent conducting oxides could be optimized to balance the tradeoff between damage resistance and optical tunability, which is critical for the design of thermally robust nanophotonic systems. We also discuss damage mitigation and ruggedization strategies for future device-scale studies and applications requiring high power beam manipulation.

36 MATERIALS SCIENCE↗

Analysis of Low RRR SRF Cavities

Recent findings in the superconducting radio-frequency (SRF) community have shown that introducing certain impurities into high-purity niobium can improve quality factors and accelerating gradients. Success has been found in nitrogen-doping, diffusion of the native oxide into the niobium surface, and thin films of alternate superconductors atop a niobium bulk cavity. We question why some impurities improve RF performance while others hinder it. The purpose of this study is to characterize the impurity profile of niobium with a low residual resistance ratio (RRR) and correlate these impurities with the RF performance of low RRR cavities so that the mechanism of recent impurity-based improvements can be better understood and improved upon. Additionally, we perform a low temperature bake on the low RRR cavity to evaluate how the intentional addition of oxygen to the RF layer affects performance. We have found that low RRR cavities experience low temperature-dependent BCS resistance behavior more prominently than their high RRR counterparts. The results of this study have the potential to unlock a new understanding on SRF materials.

43 PARTICLE ACCELERATORS↗

Analysis of Low RRR SRF Cavities

Recent findings in the superconducting radio-frequency (SRF) community have shown that introducing certain impurities into high-purity niobium can improve quality factors and accelerating gradients. Success has been found in nitrogen-doping, diffusion of the native oxide into the niobium surface, and thin films of alternate superconductors atop a niobium bulk cavity. We question why some impurities improve RF performance while others hinder it. The purpose of this study is to characterize the impurity profile of niobium with a low residual resistance ratio (RRR) and correlate these impurities with the RF performance of low RRR cavities so that the mechanism of recent impurity-based improvements can be better understood and improved upon. Additionally, we performed surface treatments, low temperature baking and nitrogen-doping, on low RRR cavities to evaluate how the intentional addition of more impurities to the RF layer affects performance. We have found that low RRR cavities experience low temperature-dependent BCS resistance behavior more prominently than their high RRR counterparts. The results of this study have the potential to unlock a new understanding on SRF materials.

43 PARTICLE ACCELERATORS↗

Ion Traps and Packaging for Heterogenous Integration - Chimera

Microfabricated surface ion traps and silicon-based photonics are critical technologies for scaling quantum systems. Current ion trap architectures face scalability and integration challenges due to limitations in optical access, fabrication techniques, and material compatibility. State-of-the-art quantum computers and atomic clocks are investigating monolithic integration, which necessitates custom traps for each ion species and has not overcome the integration hurdles presented by merging these technologies. The Chimera (Ion Traps and Packaging for Heterogeneous Integration) project proposes a novel approach utilizing heterogeneous integration (HI) of ion traps and photonic circuits. This separation of components allows for flexibility in ion trap design and reduces fabrication compromises. The Chimera project specifically designed an ion trap to interface vertically with a separately fabricated waveguide chip and demonstrates the first steps to integrating them at the packaging level. The ion trap features a large area of removed silicon, allowing the photonics chip outputs closer to the ion trap, improving alignment and packaging processes. The alignment must be accurate to < 1 µm to ensure that the light from the waveguide can overlap with the trapping region. This fine alignment must also be maintained through an ultra-high vacuum bake, a critical step in preparing an ion trap experiment. By combining separate chips, we demonstrate a new path for scaling trapped ion technology that is less reliant on monolithic integration. We successfully fabricated a trap with a large area of oxide removed, resulting in a region thinned to about 40 µm, a key milestone toward successful integration.

42 ENGINEERING↗

Epitaxial and polycrystalline GaAs solar cells using OM-CVD techniques

GaAs epitaxial films were grown by chemical vapor deposition using organo-metallic sources (OM-CVD) on single crystal and polycrystalline bulk GaAs, as well as on bulk polycrystalline and recrystallized thin-film Ge substrates. Details of Antireflecting Metal-Oxide-Semiconductor (AMOS) solar cells fabricated on GaAs films grown on bulk polycrystalline Ge and recrystallized Ge thin-film substrates will be discussed, as well as preliminary photovoltaic results obtained for n(+)/p homojunction structures.

Yeh, Y. C. M.↗

Glass heating panels and method for preparing the same from architectural reflective glass

Electrodes are positioned in intimate contact with an outer surface of a thin electrically insulating protecting layer of architectural reflective glass. Application of a voltage of sufficient magnitude substantially destroys the insulating layer located beneath the electrodes. A subsequent application of voltage results in a passage of current through the underlying thin, light reflective metal or metal oxide layer and in concomitant output of heat.

Shlichta, P. J.↗

Production of pulsed atomic oxygen beams via laser vaporization methods

Energetic pulsed atomic oxygen beams were generated by laser-driven evaporation of cryogenically frozen ozone/oxygen films and thin films of indium-tin oxide (ITO). Mass and energy characterization of beams from the ozone/oxygen films were carried out by mass spectrometry. The peak flux, found to occur at 10 eV, is estimated from this data to be 3 x 10(20) m(-2) s(-1). Analysis of the time-of-flight data indicates a number of processes contribute to the formation of the atomic oxygen beam. The absence of metastable states such as the 2p(3) 3s(1) (5S) level of atomic oxygen blown off from ITO films is supported by the failure to observe emission at 777.3 nm from the 2p(3) 3p(1) (5P sub J) levels. Reactive scattering experiments with polymer film targets for atomic oxygen bombardment are planned using a universal crossed molecular beam apparatus.

Brinza, David E.↗

Study of high temperature oxide superconductors

Experimental studies are reported whose results indicate that proper processing procedures are critical to the formation of high-temperature copper oxide superconductors. Superconducting 123 films can be fabricated using the green 211 phase as a substrate. The transition temperature and transition width characteristics of these films are better than those obtained when other oxide compounds are used as substrates. A compact or single-crystal 211 phase will be desirable as a substrate for high-quality thin films. A new high T(c) copper oxide compound with nonrare earth elements was prepared using high-temperature processing. A YBa2Cu3O7-Ag composite with improved electrical conductivity was also prepared.

Wu, M. K.↗

Method of forming low cost, formable High T(subc) superconducting wire

A ceramic superconductivity part, such as a wire, is produced through the partial oxidation of a specially formulated copper alloy in a core. The alloys contains low level of quantities of rare earth and alkaline earth dopant elements. Upon oxidation at high temperatures, and superconducting oxide phases are formed as a thin film.

Smialek, James L.↗

The effects of space radiation on thin films of YBa2Cu3O(sub 7-x)

This investigation had two objectives: (1) to determine the effects of space radiation on superconductor parameters that are most important in space applications; and (2) to determine whether this effect can be simulated with Co-60 gamma rays, the standard test method for space materials. Thin films of yttrium barium copper oxide (YBCO) were formed by coevaporation of Y, BaF2, and Cu and post-annealing in wet oxygen at 850 C for 3.5 h. The substrate used was (100) silicon with an evaporated zirconia buffer layer. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were the zero resistance transition temperature (T sub c) and the room temperature resistance. The samples were then exposed to Co-60 gamma-rays in air and in pure nitrogen, and to 780 keV electrons, in air. The parameters were then remeasured. The results are summarized. The results indicate little or no degradation in the parameters measured for samples exposed up to 10 Mrads of gamma-rays in nitrogen. However, complete degradation of samples exposed to 10-Mrad in air was observed. This degradation is preliminarily attributed to the high level of ozone generated in the chamber by the gamma-ray interaction with air. It can be concluded that: (1) the electron component of space radiation does not degrade the critical temperature of the YBCO films described, at least for energies around 800 keV and doses similar to those received by surface materials on spacecraft in typical remote sensing missions; and (2) for qualifying this and other superconducting materials against the space-radiation threat the standard test method in the aerospace industry, namely, exposure to Co-60 gamma-rays in air, may require some further investigation. As a minimum, the sample must be either in vacuum or in positive nitrogen pressure.

Herschitz, R.↗

Low cost, formable, high T(sub c) superconducting wire

A ceramic superconductivity part such as a wire is produced through the partial oxidation of a specially formulated copper alloy in the core. The alloys contain low level quantities of rare earth and alkaline earth dopant elements. Upon oxidation at high temperature, superconducting oxide phases are formed as a thin film.

Smialek, James L.↗