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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Engineering 180° ferroelectric domains in epitaxial PbTiO{sub 3} thin films by varying the thickness of the underlying (La,Sr)MnO{sub 3} layer

Epitaxial ferroelectric thin films of PbTiO{sub 3} (PTO) grown on top of nominally La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) submicron hillocks on Nb-doped SrTiO{sub 3} (100) substrate were investigated by means of scanning transmission electron microscopy. 180° ferroelectric domains were observed in the c-axis oriented PTO films. The formation and configuration of ferroelectric domains and domain walls were found to exhibit strong correlation with the thickness of the underlying LSMO hillocks. The domain walls start at the locations of the hillocks where the LSMO layer has a thickness of about 3 nm. Our results demonstrate that controlling the thickness variation (shape) of the LSMO hillocks can manipulate the position and density of the ferroelectric domain walls, which are considered to be the active elements for future nanoelectronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thickness controlled sol-gel silica films for plasmonic bio-sensing devices

Plasmonics has recently received considerable interest due to its potentiality in many fields as well as in nanobio-technology applications. In this regard, various strategies are required for modifying the surfaces of plasmonic nanostructures and to control their optical properties in view of interesting application such as bio-sensing, We report a simple method for depositing silica layers of controlled thickness on planar plasmonic structures. Tetraethoxysilane (TEOS) was used as silica precursor. The control of the silica layer thickness was obtained by optimizing the sol-gel method and dip-coating technique, in particular by properly tuning different parameters such as pH, solvent concentration, and withdrawal speed. The resulting films were characterized via atomic force microscopy (AFM), Fourier-transform (FT) spectroscopy, and spectroscopic ellipsometry (SE). Furthermore, by performing the analysis of surface plasmon resonances before and after the coating of the nanostructures, it was observed that the position of the resonance structures could be properly shifted by finely controlling the silica layer thickness. The effect of silica coating was assessed also in view of sensing applications, due to important advantages, such as surface protection of the plasmonic structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High-power low-droop violet semipolar (303{sup ¯}1{sup ¯}) InGaN/GaN light-emitting diodes with thick active layer design

Devices grown on nonpolar and semipolar planes of GaN offer key performance advantages over devices grown on the conventional c-plane, including reduced polarization fields. This allows for a wider design space on semipolar planes for light emitting diodes (LEDs) to address the problem of efficiency droop at high current densities. LED structures with very thick (10–100 nm) InGaN single-quantum-well/double heterostructure active regions were grown using conventional metal organic chemical vapor deposition on semipolar (303{sup ¯}1{sup ¯}) free-standing GaN substrates and processed and packaged using conventional techniques. Simulated band diagrams showed reduced polarization fields on the (303{sup ¯}1{sup ¯}) plane. The calculated critical thickness for misfit dislocation formation is higher on the (303{sup ¯}1{sup ¯}) plane than on other semipolar planes, such as (202{sup ¯}1{sup ¯}), allowing for thicker active regions than our previous work to further reduce droop. The higher critical thickness was confirmed with defect characterization via cathodoluminescence. A trend is demonstrated in lower efficiency droop for devices with thicker active regions. Thermal droop characteristics of these devices are also presented. These observed results were utilized to demonstrate over 1 W of output power at a current density of 1 kA/cm{sup 2} from a single 0.1 mm{sup 2} LED device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Weakly nonlinear Rayleigh-Taylor instability of a finite-thickness fluid layer

A weakly nonlinear (WN) model has been developed for the Rayleigh-Taylor instability of a finite-thickness incompressible fluid layer (slab). We derive the coupling evolution equations for perturbations on the (upper) “linearly stable” and (lower) “linearly unstable” interfaces of the slab. Expressions of temporal evolutions of the amplitudes of the perturbation first three harmonics on the upper and lower interfaces are obtained. The classical feedthrough (interface coupling) solution obtained by Taylor [Proc. R. Soc. London A 201, 192 (1950)] is readily recovered by the first-order results. Our third-order model can depict the WN perturbation growth and the saturation of linear (exponential) growth of the perturbation fundamental mode on both interfaces. The dependence of the WN perturbation growth and the slab distortion on the normalized layer thickness (kd) is analytically investigated via the third-order solutions. Comparison is made with Jacobs-Catton's formula [J. W. Jacobs and I. Catton, J. Fluid Mech. 187, 329 (1988)] of the position of the “linearly unstable” interface. Using a reduced formula, the saturation amplitude of linear growth of the perturbation fundamental mode is studied. It is found that the finite-thickness effects play a dominant role in the WN evolution of the slab, especially when kd < 1. Thus, it should be included in applications where the interface coupling effects are important, such as inertial confinement fusion implosions and supernova explosions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Cathode fall thickness of abnormal glow discharges between parallel-plane electrodes in different radii at low pressure

In order to investigate the influence of electrode radius on the characteristics of cathode fall thickness, experiments of low-pressure (20 Pa ≤ p ≤ 30 Pa) abnormal glow discharge were carried out between parallel-plane electrodes in different radii keeping gap distance unchanged. Axial distributions of light intensity were obtained from the discharge images captured using a Charge Coupled Device camera. The assumption that the position of the negative glow peak coincides with the edge of cathode fall layer was verified based on a two-dimensional model, and the cathode fall thicknesses, d{sub c}, were calculated from the axial distributions of light intensity. It was observed that the position of peak emission shifts closer to the cathode as current or pressure grows. The dependence of cathode fall thickness on the gas pressure and normalized current J/p{sup 2} was presented, and it was found that for discharges between electrodes in large radius the curves of pd{sub c} against J/p{sup 2} were superimposed on each other, however, this phenomenon will not hold for discharges between the smaller electrodes. The reason for this phenomenon is that the transverse diffusions of charged particles are not the same in two gaps between electrodes with different radii.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Correlation between Pd metal thickness and thermally stable perpendicular magnetic anisotropy features in [Co/Pd]{sub n} multilayers at annealing temperatures up to 500 °C

We examine highly stable perpendicular magnetic anisotropy (PMA) features of [Co/Pd]{sub 10} multilayers (MLs) versus Pd thickness at various ex-situ annealing temperatures. Thermally stable PMA characteristics were observed up to 500 °C, confirming the suitability of these systems for industrial applications at this temperature. Experimental observations suggest that the choice of equivalent Co and Pd layer thicknesses in a ML configuration ensures thermally stable PMA features, even at higher annealing temperatures. X-ray diffraction patterns and cross-sectional transmission electron microscopy images were obtained to determine thickness, post-annealing PMA behavior, and to explore the structural features that govern these findings.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Metal thickness dependence on spin wave propagation in magnonic crystal using yttrium iron garnet

Magnonic crystals (MCs) are key components for spin wave manipulation. MCs realized with periodically metallized surfaces have an advantage in ease of the fabrication, but the effect of the metal thickness has not been studied well. In this work, the metal thickness dependence on the transmission spectra of localized mode spin waves was investigated. The metal thickness over half of the skin depth was necessary to prevent strong attenuation of spin waves.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

LaAlO{sub 3} thickness window for electronically controlled magnetism at LaAlO{sub 3}/SrTiO{sub 3} heterointerfaces

Complex-oxide heterostructures exhibit rich physical behavior such as emergent conductivity, superconductivity, and magnetism that are intriguing for scientific reasons as well as for potential technological applications. It was recently discovered that in-plane magnetism at the LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) interface can be electronically controlled at room temperature. Here, we employ magnetic force microscopy to investigate electronically controlled ferromagnetism at the LAO/STO interface with LAO thickness t varied from 4 unit cell (u.c.) to 40 u.c. Magnetic signatures are observed only within a thickness window 8 u.c. ≤ t ≤ 25 u.c. Within this window, the device capacitance corresponds well to the expected geometric value, while for thicknesses outside this window, the capacitance is strongly suppressed. The ability to modulate electronic and magnetic properties of LAO/STO devices depends on the ability to control carrier density, which is in turn constrained by intrinsic tunneling mechanisms.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Dynamic atomic layer epitaxy of InN on/in +c-GaN matrix: Effect of “In+N” coverage and capping timing by GaN layer on effective InN thickness

The growth front in the self-organizing and self-limiting epitaxy of ∼1 monolayer (ML)-thick InN wells on/in +c-GaN matrix by molecular beam epitaxy (MBE) has been studied in detail, with special attention given to the behavior and role of the N atoms. The growth temperatures of interest are above 600 °C, far higher than the typical upper critical temperature of 500 °C in MBE. It was confirmed that 2 ML-thick InN wells can be frozen/inserted in GaN matrix at 620 °C, but it was found that N atoms at the growth front tend to selectively re-evaporate more quickly than In atoms at temperatures higher than 650 °C. As a result, the effective thickness of inserted InN wells in the GaN matrix at 660–670 °C were basically 1 ML or sub-ML, even though they were capped by a GaN barrier at the time of 2 ML “In+N” coverage. Furthermore, it was found that the N atoms located below In atoms in the dynamic atomic layer epitaxy growth front had remarkably weaker bonding to the +c-GaN surface.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

The effect of oxide shell thickness on the structural, electronic, and optical properties of Si-SiO{sub 2} core-shell nano-crystals: A (time dependent)density functional theory study

Due to their tunable properties, silicon nano-crystals (NC) are currently being investigated. Quantum confinement can generally be employed for size-dependent band-gap tuning at dimensions smaller than the Bohr radius (∼5 nm for silicon). At the nano-meter scale, however, increased surface-to-volume ratio makes the surface effects dominant. Specifically, in Si-SiO{sub 2} core-shell semiconductor NCs the interfacial transition layer causes peculiar electronic and optical properties, because of the co-existence of intermediate oxidation states of silicon (Si{sup n+}, n = 0–4). Due to the presence of the many factors involved, a comprehensive understanding of the optical properties of these NCs has not yet been achieved. In this work, Si-SiO{sub 2} NCs with a diameter of 1.1 nm and covered by amorphous oxide shells with thicknesses between 2.5 and 4.75 Å are comprehensively studied, employing density functional theory calculations. It is shown that with increased oxide shell thickness, the low-energy part of the optical transition spectrum of the NC is red shifted and attenuated. Moreover, the absorption coefficient is increased in the high-energy part of the spectrum which corresponds to SiO{sub 2} transitions. Structural examinations indicate a larger compressive stress on the central silicon cluster with a thicker oxide shell. Examination of the local density of states reveals the migration of frontier molecular orbitals from the oxide shell into the silicon core with the increase of silica shell thickness. The optical and electrical properties are explained through the analysis of the density of states and the spatial distribution of silicon sub-oxide species.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Thickness dependent optical and electrical properties of CdSe thin films

The effect of thickness on the optical and electrical properties of CdSe thin films is investigated in this paper. The films of thickness 445 nm, 631 nm and 810 nm were deposited on glass and ITO coated glass substrates using thermal evaporation technique. The deposited thin films were thermally annealed in air atmosphere at temperature 100°C and were subjected to UV-Vis spectrophotometer and source meter for optical and electrical analysis respectively. The absorption coefficient is observed to increase with photon energy and found maximum in higher photon energy region. The extinction coefficient and refractive index are also calculated. The electrical analysis shows that the electrical resistivity is observed to be decreased with thickness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Hf thickness dependence of spin-orbit torques in Hf/CoFeB/MgO heterostructures

We have studied the spin-orbit torques in perpendicularly magnetized Hf/CoFeB/MgO system, by systematically varying the thickness of Hf underlayer. We have observed a sign change of effective fields between Hf thicknesses of 1.75 and 2 nm, indicating that competing mechanisms, such as the Rashba and spin Hall effects, contribute to spin-orbit torques in our system. For larger Hf thicknesses (>2 nm), both the components of spin-orbit torques arise predominantly from the bulk spin Hall effect. We have also confirmed these results using spin-orbit torque induced magnetization switching measurements. Our results could be helpful in designing Hf based SOT devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Thickness dependence of spin Hall magnetoresistance in FeMn/Pt bilayers

We investigated spin Hall magnetoresistance in FeMn/Pt bilayers, which was found to be one order of magnitude larger than that of heavy metal and insulating ferromagnet or antiferromagnet bilayer systems, and comparable to that of NiFe/Pt bilayers. The spin Hall magnetoresistance shows a non-monotonic dependence on the thicknesses of both FeMn and Pt. The former can be accounted for by the thickness dependence of net magnetization in FeMn thin films, whereas the latter is mainly due to spin accumulation and diffusion in Pt. Through analysis of the Pt thickness dependence, the spin Hall angle, spin diffusion length of Pt and the real part of spin mixing conductance were determined to be 0.2, 1.1 nm, and 5.5 × 10{sup 14} Ω{sup −1}m{sup −2}, respectively. The results corroborate the spin orbit torque effect observed in this system recently.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Thickness effect on the structure, grain size, and local piezoresponse of self-polarized lead lanthanum zirconate titanate thin films

Polycrystalline lanthanum lead zirconate titanate (PLZT) thin films were deposited on Pt/TiO{sub 2}/SiO{sub 2}/Si substrates to study the effects of the thickness and grain size on their structural and piezoresponse properties at nanoscale. Thinner PLZT films show a slight (100)-orientation tendency that tends to random orientation for the thicker film, while microstrain and crystallite size increases almost linearly with increasing thickness. Piezoresponse force microscopy and autocorrelation function technique were used to demonstrate the existence of local self-polarization effect and to study the thickness dependence of correlation length. The obtained results ruled out the bulk mechanisms and suggest that Schottky barriers near the film-substrate are likely responsible for a build-in electric field in the films. Larger correlation length evidence that this build-in field increases the number of coexisting polarization directions in larger grains leading to an alignment of macrodomains in thinner films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Space- and time-resolved resistive measurements of liquid metal wall thickness

In a fusion reactor internally coated with liquid metal, it will be important to diagnose the thickness of the liquid at various locations in the vessel, as a function of time, and possibly respond to counteract undesired bulging or depletion. The electrical conductance between electrodes immersed in the liquid metal can be used as a simple proxy for the local thickness. Here a matrix of electrodes is shown to provide spatially and temporally resolved measurements of liquid metal thickness in the absence of plasma. First a theory is developed for m × n electrodes, and then it is experimentally demonstrated for 3 × 1 electrodes, as the liquid stands still or is agitated by means of a shaker. The experiments were carried out with Galinstan, but are easily extended to lithium or other liquid metals.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2012

Refractive index gradient measurement across the thickness of a dielectric film by the prism coupling method

A method is proposed for measuring the refractive index gradient n(z) in nonuniformly thick dielectric films. The method is based on the excitation of waveguide modes in a film using the prism coupling technique and on the calculation of n(z) and film thickness H{sub f} with the help of the angular positions of the TE or TM modes. The method can be used for an arbitrary shape of the index modulation over the film thickness in the limit of a small gradient [{Delta} n(z)/n(z) || 1]. (laser applications and other topics in quantum electronics)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

HST SPECTRAL MAPPING OF L/T TRANSITION BROWN DWARFS REVEALS CLOUD THICKNESS VARIATIONS

Most directly imaged giant exoplanets are fainter than brown dwarfs with similar spectra. To explain their relative underluminosity, unusually cloudy atmospheres have been proposed. However, with multiple parameters varying between any two objects, it remained difficult to observationally test this idea. We present a new method, sensitive time-resolved Hubble Space Telescope near-infrared spectroscopy, to study two rotating L/T transition brown dwarfs (2M2139 and SIMP0136). The observations provide spatially and spectrally resolved mapping of the cloud decks of the brown dwarfs. The data allow the study of cloud structure variations while other parameters are unchanged. We find that both brown dwarfs display variations of identical nature: J- and H-band brightness variations with minimal color and spectral changes. Our light curve models show that even the simplest surface brightness distributions require at least three elliptical spots. We show that for each source the spectral changes can be reproduced with a linear combination of only two different spectra, i.e., the entire surface is covered by two distinct types of regions. Modeling the color changes and spectral variations together reveal patchy cloud covers consisting of a spatially heterogeneous mix of low-brightness, low-temperature thick clouds and brighter, thin, and warm clouds. We show that the same thick cloud patches seen in our varying brown dwarf targets, if extended to the entire photosphere, predict near-infrared colors/magnitudes matching the range occupied by the directly imaged exoplanets that are cooler and less luminous than brown dwarfs with similar spectral types. This supports the models in which thick clouds are responsible for the near-infrared properties of these ''underluminous'' exoplanets.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2015

SU-E-P-15: Technique Factor Modulation and Reference Plane Air Kerma Rates in Response to Simulated Patient Thickness Variations for a Sample of Current Generation Fluoroscopes

Purpose: To evaluate and compare approaches to technique factor modulation and air kerma rates in response to simulated patient thickness variations for four state-of-the-art and one previous-generation interventional fluoroscopes. Methods: A polymethyl methacrylate (PMMA) phantom was used as a tissue surrogate for the purposes of determining fluoroscopic reference plane air kerma rates, kVp, mA, and spectral filtration over a wide range of simulated tissue thicknesses. Data were acquired for each fluoroscopic and acquisition dose curve within a default abdomen or body imaging protocol. Results: The data obtained indicated vendor- and model-specific variations in the approach to technique factor modulation and reference plane air kerma rates across a range of tissue thicknesses. Some vendors have made hardware advances increasing the radiation output capabilities of their fluoroscopes; this was evident in the acquisition air kerma rates. However, in the imaging protocol evaluated, all of the state-of-the-art systems had relatively low air kerma rates in the fluoroscopic low-dose imaging mode as compared to the previous-generation unit. Each of the newest-generation systems also employ copper filtration in the selected protocol in the acquisition mode of imaging; this is a substantial benefit, reducing the skin entrance dose to the patient in the highest dose-rate mode of fluoroscope operation. Conclusion: Understanding how fluoroscopic technique factors are modulated provides insight into the vendor-specific image acquisition approach and provides opportunities to optimize the imaging protocols for clinical practice. The enhanced radiation output capabilities of some of the fluoroscopes may, under specific conditions, may be beneficial; however, these higher output capabilities also have the potential to lead to unnecessarily high dose rates. Therefore, all parties involved in imaging, including the clinical team, medical physicists, and imaging vendors, must work together to ensure that adequate but not excessive radiation doses are used.

60 APPLIED LIFE SCIENCES↗