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All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

DISCOVR strain pipeline screening – Part I: Maximum specific growth rate as a function of temperature and salinity for 38 candidate microalgae for biofuels production

Here, to identify high productivity strains for microalgal biofuels generation, the maximum specific growth rate of 38 strains was measured as a function of salinity (i.e., 5, 15, and 35 PSU) and temperature (i.e., at 8 temperatures along a linear gradient from ca. 5 to 45°C) to determine the most suitable growth medium salinity and best growing season, respectively, for outdoor raceway pond cultivation. The following strains were evaluated: Agmenellum quadruplicatum UTEX 2268, Anabaena sp. ATCC 33081, Arthrospira fusiformis UTEX 2721, Arthrospira platensis UTEX 3086, Chlorella vulgaris NREL 4-C12, Chlorella autotrophica CCMP 243, Chlorella sorokiniana DOE1044, Chlorella sorokiniana DOE 1116, Chlorella sorokiniana DOE 1412 (UTEXB3016), Chlorella vulgaris LRB AZ-1201, Chlorococcum littorale UTEX 117, Chlorococcum sp. UTEX-B P7, Chloromonas reticulata CCALA 870, Coelastrella sp. DOE 0202, Cyanobacterium sp. AB1, Micractinium reisseri NREL 14-F2, Microchloropsis gaditana CCMP1894, Microchloropsis salina CCMP 1776, Monoraphidium sp. MONOR1, Monoraphidium minutum 26B-AM, Nannochloropsis oceanica CCAP 849/10, Oscillatoria cf. priestleyi CCMEE 5020.1-1, Picochlorum celeri TG2-WT-CSM/EMRE, Picochlorum oklahomensis CCMP 2329, Picochlorum renovo NREL 39-A8, Picochlorum soloecismus DOE 101, Porphyridium cruentum CCMP 675, Scenedesmus acutus LRB-AP-0401, Scenedesmus obliquus DOE 0152.z, Scenedesmus obliquus UTEX393,Scenedesmus rubescens NREL 46B-D3, Scenedesmus sp. IITRIND2, Stichococcus minor CCMP 819, Stichococcus minutus CCALA 727, Synechococcus elongatus UTEX2973.1, Tetraselmis striata LANL 1001, Tisochrysis lutea CCMP 1324, and Tribonema minus UTEXB3156. For each strain, the identity and the presence of bacterial cohorts was determined using 18S and 16S rDNA sequencing, respectively. The maximum specific growth rate versus temperature data were also used to determine the activation energies (Arrhenius equation) for most strains. For all strains, the measured salinity and temperature tolerance data were compared to those reported in the literature. The fastest growing strains were down-selected for subsequent biomass productivity measurements in climate-simulation photobioreactors, as reported in the next paper in the issue.

18S and 16S rDNA sequencing↗
DOE OSTI2026

Sub-melt nanosecond pulsed-laser induced densification and strain-field relaxation in single-crystal diamond

Dislocations and polishing-induced defect networks in synthetic diamond introduce local strain fields and broaden Raman features, limiting performance in optical, thermal, and electronic applications. Laser annealing is emerging as a promising approach to repair surface and near-surface defects in diamond without entering the melt regime, yet surface densification, defect-state modification, and associated structural changes have not been well quantified. In this work, we show that sub-melt nanosecond pulsed-laser annealing (PLA) induces near-surface densification and defect-mediated strain relaxation in single-crystal Chemical Vapor Deposition (CVD) diamond. Single- and two-pulse PLA were applied, and structural evolution was quantified using co-registered ISO 25,178 white-light interferometry, depth-resolved Raman spectroscopy, and cross-sectional STEM with geometric phase analysis (GPA). Across a 5 × 6 grid (n = 30), responsive regions exhibit large reductions in local slope (Sdq 45–65%), developed area (Sdr 60–90%), height spread (Sp, Sz 30–65%), void volume (Vv 57–60%), and roughness amplitude (Sa, Sq 48–57%), consistent with densification of ∼4–6.5 nm. Raman profiling shows narrowing of the diamond line and improved spectral uniformity to depths of ∼2–3 μm. Given that the Raman probing depth significantly exceeds the densified layer thickness, this response is interpreted as consistent with long-range strain-field redistribution originating from the near-surface region. STEM-GPA strain maps further support this interpretation, showing smoother strain fields, suppressed hotspots, and redistribution of localized strain concentrations following PLA. These results are consistent with defect-mediated strain relaxation and densification-driven modification of the near-surface energy state. The approach provides a scalable pathway for improving near-surface structural quality in diamond relevant to electronic, photonic, and quantum applications.

Areal surface metrology (ISO 25,178)↗
DOE OSTI2016

Thermal conductivity of graphene mediated by strain and size

Based on first-principles calculations and full iterative solution of the linearized Boltzmann–Peierls transport equation for phonons, we systematically investigate effects of strain, size and temperature on the thermal conductivity k of suspended graphene. The calculated size-dependent and temperature-dependent k for finite samples agree well with experimental data. The results show that, contrast to the convergent room-temperature k = 5450 W/m-K of unstrained graphene at a sample size ~8 cm, k of strained graphene diverges with increasing the sample size even at high temperature. Out-of-plane acoustic phonons are responsible for the significant size effect in unstrained and strained graphene due to their ultralong mean free path and acoustic phonons with wavelength smaller than 10 nm contribute 80% to the intrinsic room temperature k of unstrained graphene. Tensile strain hardens the flexural modes and increases their lifetimes, causing interesting dependence of k on sample size and strain due to the competition between boundary scattering and intrinsic phonon–phonon scattering. k of graphene can be tuned within a large range by strain for the size larger than 500 μm. These findings shed light on the nature of thermal transport in two-dimensional materials and may guide predicting and engineering k of graphene by varying strain and size.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Characterization of localized plastic deformation behaviors associated with dynamic strain aging in pipeline steels using digital image correlation

Localized deformation behavior in X52 and X70 pipeline steels during dynamic strain aging (or DSA, caused by interstitial atom-dislocation interactions during plastic deformation) were systematically assessed using digital image correlation with incremental strain analysis during elevated temperature tensile testing in the range of 25-350 °C. Similar to materials that use substitutional atoms for DSA, deformation band propagation and nucleation behaviors in the steels were directly related to the morphologies of flow curves from the tensile data. Comparisons between the steels and substitutional DSA systems were made. The type of localized deformation behavior was dependent on the temperature and strain rate conditions of the tensile test and the total amount of strain in the sample. Plastic flow was primarily dominated by deformation band propagation and nucleation at relatively low and high temperatures respectively within the DSA regime. It was theorized that the changing serration morphologies and deformation behaviors at different temperature-strain rate conditions were due to relative differences between the mobility of the solute atoms and the velocity of the mobile dislocations throughout the DSA regime. The dislocation density (which increases due to strain hardening during a tensile test) also influenced deformation behavior at relatively low and high strains.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Strain-dependent Damage in Mouse Lung After Carbon Ion Irradiation

Purpose: To examine whether inherent factors produce differences in lung morbidity in response to carbon ion (C-ion) irradiation, and to identify the molecules that have a key role in strain-dependent adverse effects in the lung. Methods and Materials: Three strains of female mice (C3H/He Slc, C57BL/6J Jms Slc, and A/J Jms Slc) were locally irradiated in the thorax with either C-ion beams (290 MeV/n, in 6 cm spread-out Bragg peak) or with {sup 137}Cs {gamma}-rays as a reference beam. We performed survival assays and histologic examination of the lung with hematoxylin-eosin and Masson's trichrome staining. In addition, we performed immunohistochemical staining for hyaluronic acid (HA), CD44, and Mac3 and assayed for gene expression. Results: The survival data in mice showed a between-strain variance after C-ion irradiation with 10 Gy. The median survival time of C3H/He was significantly shortened after C-ion irradiation at the higher dose of 12.5 Gy. Histologic examination revealed early-phase hemorrhagic pneumonitis in C3H/He and late-phase focal fibrotic lesions in C57BL/6J after C-ion irradiation with 10 Gy. Pleural effusion was apparent in C57BL/6J and A/J mice, 168 days after C-ion irradiation with 10 Gy. Microarray analysis of irradiated lung tissue in the three mouse strains identified differential expression changes in growth differentiation factor 15 (Gdf15), which regulates macrophage function, and hyaluronan synthase 1 (Has1), which plays a role in HA metabolism. Immunohistochemistry showed that the number of CD44-positive cells, a surrogate marker for HA accumulation, and Mac3-positive cells, a marker for macrophage infiltration in irradiated lung, varied significantly among the three mouse strains during the early phase. Conclusions: This study demonstrated a strain-dependent differential response in mice to C-ion thoracic irradiation. Our findings identified candidate molecules that could be implicated in the between-strain variance to early hemorrhagic pneumonitis after C-ion irradiation.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2021

Distributed fiber optic strain sensing of bending deformation of a well mockup in the laboratory

Well integrity is critical to the safety and success of subsurface energy exploration and management, as leakage of fluids from subsurface reservoirs is often induced by compromised wells. This study investigates bending deformation of a mockup of an oil/gas well that is subjected to loads expected in deviated wells under reservoir compaction and assesses the feasibility of utilizing distributed fiber optic strain sensing to monitor the deformation. Here, a well mockup, which consists of outer and inner steel pipes with a cemented annulus, is tested under three-point bending loading and its strain and curvature development is monitored by Brillouin optical time domain reflectometry/analysis (BOTDR/A) as well as optical frequency domain reflectometry (OFDR). The primary objective of this research is to assess the strain sensing performance of newly fabricated fiber optic cables and to identify key cable characteristics which could improve the quality of distributed strain measurements with BOTDR/A. Results show that the tight-buffered cable is best suited for strain sensing as its maximum errors in the strain measurement were -36% and -24% against conventional sensors at the maximum elastic and plastic bending loads, respectively, whereas those of the non-tight-buffered cable were -45% and -71%, respectively. Similar trends were obtained in the bending curvature measurement. The detailed design of the tight-buffered cable is presented to elucidate key characteristics of such a cable, which will facilitate accurate distributed strain sensing in oil and gas wells.

42 ENGINEERING↗
DOE OSTI2018

Effect of strain level on the evolution of microstructure in a recently developed AD730 nickel based superalloy during hot forging

Highlights: • Hot forging of AD730 led to formation of large non-recrystallized grains. • Similarity in chemical compositions of the non-recrystallized zones and the matrix. • Increase in strain level promoted recrystallization. - Abstract: Design and control of microstructure of engineering parts made from nickel based superalloys with superior mechanical properties for high temperature applications, require the parts to be subjected to certain thermo-mechanical processing during forging. This often includes sequential straining and annealing at elevated temperatures followed by subsequent aging heat treatments at lower temperatures. In this study, the effect of strain magnitude on the evolution of microstructure during hot forging of a recently developed AD730 nickel based superalloy has been investigated. Microstructural heterogeneity was observed in a forged material manifested in a form of large non-recrystallized grains within the recrystallized matrix that is observed to be dependent on the level of deformation (i.e. strain magnitude). Analyses of microstructure indicated significant reduction in the fraction of low-angle grain boundaries and sub-structures with an increase in the applied strain, suggesting higher fraction of recrystallization with higher levels of strains. It was concluded that the lower strain levels were insufficient to provide enough driving force for complete recrystallization throughout the entire microstructure of the forged material.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Strain effects on the modulation of band gap and optical properties of direct band gap silicon

Highlights: • The ideal tensile strength and the cleave mechanism of D135-Si were studied in detail. • The strain effects on band gap were discussed. • The strain and pressure effects on the optical properties were studied. - Abstract: Based on the first-principles calculations, the strain effects on the optical properties of direct band gap silicon crystal D135-Si were systemically investigated. The stress-strain relations and phonon spectra show that the realistic peak tensile strengths in three principle symmetry crystallographic directions [100], [010] and [001] are 4.5, 9.7 and 12.1 GPa, respectively. By imposing the pressure and strain on structure, we studied the direct-indirect band gap transitions and obtained the ranges of the direct band gap, namely 0–4 GPa on pressure, −0.07–0, −0.04–0.08, and −0.01–0.03 on strain along a-, b- and c-direction, respectively. The imaginary part of the dielectric function was calculated to analyze the optical absorption property, which shows the strong adsorption coefficients in the visible range of the sunlight. The effect of pressure on the optical absorption property of structure is the smallest, and the strain effects are gradually enhanced along c-, b- and a-direction, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

The in-depth residual strain heterogeneities due to an indentation and a laser shock peening for Ti-6Al-4V titanium alloy

In this paper, heterogeneity of the through-thickness residual strain due to the laser shock peening (LSP) in comparison with that due to the indentation was studied in Ti-6Al-4V alloy samples. The latter is almost a quasi-static process while the former features extremely high strain-rate deformation. The synchrotron based high-energy X-ray diffraction was employed to investigate the through-thickness residual strain distribution. The studied two samples after the two processing procedures share the following features: (i) the pressure affected depths are both ~2 mm and (ii) the largest magnitudes of the compressive residual strains parallel to the surface are ~4,000 με. However, the pit depth for the indentation sample is ~9 times larger than that for the LSP. The position featuring the largest magnitude of the compressive residual strain is in the sub-surface for the indentation while it is in the surface for the LSP. Results of the elastic-visco-plastic finite element simulation for the indentation indicate that the position featuring the maximum accumulative plastic shear as defined in this paper corresponds to the location with the largest magnitude of compressive residual strain. To validate this finding, full width at half maximum (FWHM) of the X-ray diffraction profile, which is proportional to the level of the plastic deformation, is also studied. Finally, it is found that positions with the largest FWHM indeed correspond to the largest magnitude of compressive residual strain for both tests.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Semiconductor-to-metal transition in rutile TiO 2 induced by tensile strain

Here, we report the first observation of a reversible, degenerate doping of titanium dioxide with strain, which is referred to as a semiconductor-to-metal transition. Application of tensile strain to a ~50 nm film of rutile TiO 2 thermally grown on a superelastic nitinol (NiTi intermetallic) substrate causes reversible degenerate doping as evidenced by electrochemistry, X-ray photoelectron spectroscopy (XPS), and conducting atomic force microscopy (CAFM). Cyclic voltammetry and impedance measurements show behavior characteristic of a highly doped n -type semiconductor for unstrained TiO 2 transitioning to metallic behavior under tensile strain. The transition reverses when strain is removed. Valence band XPS spectra show that samples strained to 5% exhibit metallic-like intensity near the Fermi level. Strain also induces a distinct transition in CAFM current-voltage curves from rectifying (typical of an n -type semiconductor) to ohmic (metal-like) behavior. We propose that strain raises the energy distribution of oxygen vacancies ( n -type dopants) near the conduction band and causes an increase in carrier concentration. As the carrier concentration is increased, the width of the depletion region is reduced, which then permits electron tunneling through the space charge barrier resulting in the observed metallic behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Electrochemically Induced Strain Evolution in Pt–Ni Alloy Nanoparticles Observed by Bragg Coherent Diffraction Imaging

Strain is known to enhance the activity of the oxygen reduction reaction in catalytic platinum alloy nanoparticles, whose inactivity is the primary impediment to efficient fuel cells and metal–air batteries. Here, Bragg coherent diffraction imaging (BCDI) was employed to reveal the strain evolution during the voltammetric cycling in Pt–Ni alloy nanoparticles composed of Pt 2 Ni 3 , Pt 1 Ni 1 , and Pt 3 Ni 2 . Analysis of the 3D strain images using a core–shell model shows that the strain as large as 5% is induced on Pt-rich shells due to Ni dissolution. The composition dependency of the strain on the shells is in excellent agreement with that of the catalytic activity. The present study demonstrates that BCDI enables quantitative determination of the strain on alloy nanoparticles during electrochemical reactions, which provides a means to exploit surface strain to design a wide range of electrocatalysts.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Strain Effect in Palladium Nanostructures as Nanozymes

While various effects of physicochemical parameters (e.g., size, facet, composition, and internal structure) on the catalytic efficiency of nanozymes (i.e., nanoscale enzyme mimics) have been studied, the strain effect has never been reported and understood before. Herein, we demonstrate the strain effect in nanozymes by using Pd octahedra and icosahedra with peroxidase-like activities as a model system. Strained Pd icosahedra were found to display 2-fold higher peroxidase-like catalytic efficiency than unstrained Pd octahedra. Theoretical analysis suggests that tensile strain is more beneficial to OH radical (a key intermediate for the catalysis) generation than compressive strain. Pd icosahedra are more active than Pd octahedra because icosahedra amplify the surface strain field. As a proof-of-concept demonstration, the strained Pd icosahedra were applied to immunoassay of biomarkers, outperforming both unstrained Pd octahedra and natural peroxidases. The findings in this research may serve as a strong foundation to guide the design of high-performance nanozymes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Strain engineering can modulate the material properties of two-dimensional (2D) sem- iconductors for electronic and optoelectronic applications. Recent theory and experiments have found that uniaxial tensile strain can improve the electron mobility of monolayer MoS 2 , a 2D semiconductor, but the effects of biaxial strain on charge transport are not well-understood in 2D semiconductors. Here, we use biaxial tensile strain on flexible substrates to probe the electron mobility in monolayer WS 2 and MoS 2 transistors. Further, this approach experimentally achieves ~2× higher on-state current and mobility with ~0.3% applied biaxial strain in WS 2 , the highest mobility improvement at the lowest strain reported to date. We also examine the mechanisms behind this improvement through density functional theory simulations, concluding that the enhancement is primarily due to reduced intervalley electron-phonon scattering. These results underscore the role of strain engineering 2D semiconductors for flexible electronics, sensors, integrated circuits, and other opto-electronic applications.

2D materials↗
DOE OSTI2013

Anisotropic strain relaxation and the resulting degree of polarization by one- and two-step growth in nonpolar a-plane GaN grown on r-sapphire substrate

Anisotropic strain relaxation and the resulting degree of polarization of the electronic transition in nonpolar a-plane GaN using one- and two-step growth are studied. By using two-step growth, a slower coalescence and a longer roughening-recovery process lead to larger anisotropic strain relaxation, a less striated surface, and lower densities of basal stacking fault (BSF) and prismatic stacking fault (PSF). It is suggested that anisotropic in-plane strains, surface striation, and BSF and PSF densities in nonpolar a-GaN are consequences of the rate of coalescence, the period of roughening-recovery process, and the degree of anisotropic strain relaxation. In addition, the two-step growth mode can enhance the degree of polarization of the electronic transition. The simulation results of the k⋅p perturbation approach show that the oscillator strength and degree of polarization of the electronic transition strongly depend on the in-plane strains upon anisotropic in-plane strain relaxation. The research results provide important information for optimized growth of nonpolar III-nitrides. By using two-step growth and by fabricating the devices on the high-quality nonpolar free-standing GaN substrates, high-efficiency nonpolar a-plane InGaN LEDs can be realized. Nonpolar a-plane InGaN/GaN LEDs can exhibit a strongly polarized light to improve the contrast, glare, eye discomfort and eye strain, and efficiency in display application.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Engineering the quantum anomalous Hall effect in graphene with uniaxial strains

We theoretically investigate the manipulation of the quantum anomalous Hall effect (QAHE) in graphene by means of the uniaxial strain. The values of Chern number and Hall conductance demonstrate that the strained graphene in presence of Rashba spin-orbit coupling and exchange field, for vanishing intrinsic spin-orbit coupling, possesses non-trivial topological phase, which is robust against the direction and modulus of the strain. Besides, we also find that the interplay between Rashba and intrinsic spin-orbit couplings results in a topological phase transition in the strained graphene. Remarkably, as the strain strength is increased beyond approximately 7%, the critical parameters of the exchange field for triggering the quantum anomalous Hall phase transition show distinct behaviors—decrease (increase) for strains along zigzag (armchair) direction. Our findings open up a new platform for manipulation of the QAHE by an experimentally accessible strain deformation of the graphene structure, with promising application on novel quantum electronic devices with high efficiency.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel

The performance limits of monolayer transition metal dichalcogenide (TMDC) field-effect transistors (FETs) with isotropic biaxial strain were examined with the “top-of-the-barrier” ballistic MOSFET model. Using a first-principle theory, we calculated the band structures and density of states of strained monolayer MoS{sub 2} and WS{sub 2}, and used the results in model calculations. Introducing strain moves the positions of the conduction band minimum and valence band maximum in k-space with resultant variation in the effective mass and population of carriers. Introducing 2% tensile strain into n-type MoS{sub 2} FETs decreases the electron effective mass and, at the same time, increases energy separation between the lower and the higher valleys in the conduction band, resulting in 26% improvement of the ON current up to 1260 A/m. Whereas compressive strain results in complicated effects, −2% strain also improves the ON current by 15%. These results suggest that introducing artificial strain is promising to improve TMDC FET performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Substrate-dependent post-annealing effects on the strain state and electrical transport of epitaxial La{sub 5/8-y}Pr{sub y}Ca{sub 3/8}MnO{sub 3} films

Large scale electronic phase separation (EPS) between ferromagnetic metallic and charge-ordered insulating phases in La{sub 5/8-y}Pr{sub y}Ca{sub 3/8}MnO{sub 3} (y = 0.3) (LPCMO) is very sensitive to the structural changes. This work investigates the effects of post-annealing on the strain states and electrical transport properties of LPCMO films epitaxially grown on (001){sub pc} SrTiO{sub 3} (tensile strain), LaAlO{sub 3} (compressive strain) and NdGaO{sub 3} (near-zero strain) substrates. Before annealing, all the films are coherent-epitaxial and insulating through the measured temperature range. Obvious change of film lattice is observed during the post-annealing: the in-plane strain in LPCMO/LAO varies from −1.5% to −0.1% while that in LPCMO/STO changes from 1.6% to 1.3%, and the lattice of LPCMO/NGO keeps constant because of the good lattice-match between LPCMO and NGO. Consequently, the varied film strain leads to the emergence of metal-insulator transitions (MIT) and shift of the critical transition temperature in the electrical transport. These results demonstrate that lattice-mismatch combined with post-annealing is an effective approach to tune strain in epitaxial LPCMO films, and thus to control the EPS and MIT in the films.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Engineering of optical polarization based on electronic band structures of A-plane ZnO layers under biaxial strains

In-plane anisotropic strains in A-plane layers on the electronic band structure of ZnO were investigated from the viewpoint of optical polarization anisotropy. Investigations utilizing k·p perturbation theory revealed that energy transitions and associated oscillation strengths were dependent on in-plane strains. The theoretical correlation between optical polarizations and in-plane strains was experimentally demonstrated using A-plane ZnO layers with different in-plane strains. Finally, optical polarization anisotropy and its implications for in-plane optical properties are discussed in relation to the energy shift between two orthogonal directions. Higher polarization rotations were obtained in an A-plane ZnO layer with in-plane biaxially compressive strains as compared to strain-free ZnO. This study provides detailed information concerning the role played by in-plane strains in optically polarized applications based on nonpolar ZnO in the ultra-violet region.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗