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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Oxidation of silicon nitride sintered with rare-earth oxide additions

The effects of rare-earth oxide additions on the oxidation of sintered Si3N4 were examined. Insignificant oxidation occurred at 700 and 1000 C, with no evidence of phase instability. At 1370 C, the oxidation rate was lowest for Y2O3 and increased for additions of La2O3, Sm2O3, and CeO2, in that order. Data obtained from X-ray diffraction, electron microprobe analysis, and scanning electron microscopy indicate that oxidation occurs via diffusion of cationic species from Si3N4 grain boundaries.

Mieskowski, D. M.↗
NASA NTRS1985

Evaluation of alpha-SiC sintering using statistical methods

The effect of time and temperature on the density and strength of alpha-SiC was studied and mathematically modeled using a central composite experimental design. A sintering temperature of 2150 C for 1.7 h maximized the flexural strength and densification values. However, temperatures above 2200 C promoted abnormal grain growth, with resulting appreciable decreases in strength. Flexural strength increased exponentially with increasing density for specimens with densities less than or equal to 92 percent of theoretical.

Hurst, J. B.↗
NASA NTRS1985

Hot corrosion of sintered alpha-SiC at 1000 C

The hot corrosion of sintered alpha-SiC by thin films of Na2SO4 and Na2CO3 was studied at 1000 C in controlled gas atmospheres. Under all conditions, corrosion led to 10 to 20 times the amount of SiO2 formed in pure oxidation after a 48-h exposure. In addition, small amounts of sodium silicate formed. Melts of Na2SO4/SO3 caused uniform pitting of the SiC substrate; Na2CO3/CO2 melts caused localized pitting and grain-boundary attack. In all cases, the protective SiO2 layer dissolved to form silicate, leading to corrosion. In the sulfate case, free carbon in the SiC promotes this process. In all cases the presence of liquid films is responsible for rapid transport rates and the subsequent rapid reaction.

Jacobson, N. S.↗
NASA NTRS1985

Fluidized reduction of oxides on fine metal powders without sintering

In the process of reducing extremely fine metal particles (av. particle size or = 1000 angstroms) covered with an oxide layer, the metal particles are fluidized by a gas flow contg. H, heated, and reduced. The method uniformly and easily reduces surface oxide layers of the extremely fine metal particles without causing sintering. The metal particles are useful for magnetic recording materials, conductive paste, powder metallurgy materials, chem. reagents, and catalysts.

Hayashi, T.↗
NASA NTRS1985

Sintered alpha silicon carbide ceramics for high temperature structural application - Status review and recent developments

The physical properties of sintered alpha silicon carbide are reviewed, including the effect of oxidation at high temperatures. Net shape fabricated components are described which have undergone extensive testing in heat engine applications. Properties of an SiC/TiB2 composite material, which has significantly improved fracture toughness, are presented.

Storm, R. S.↗
NASA NTRS1986

Structure and grain coarsening during the sintering of alumina

The pore surface area (Sp) and grain-boundary area (Sgb) were measured during the sintering of undoped and doped (100 ppm MgO) alumina compacts. Since the presence of the additive affects only Sgb (raising it at a given value of the density), pinning of the boundaries by solid-solution drag is the only additive function evidenced by the results. The importance of such pinning even at densities as low as 75 percent of theoretical is linked to the existence of microstructural inhomogeneities.

Shaw, N. J.↗
NASA NTRS1987

Making Ceramic Parts by Laminating and Sintering Thin Sheets

Chemical composition varies as function of depth. Technique developed to fabricate monolithic ceramic component by sintering laminated body made from thin sheets of green ceramic. Method allows discrete changes in chemistry effected across monolith. Component having one-dimensional variation in material composition fabricated in this manner.

Cawley, J. D.↗
NASA NTRS1986

High-temperature effect of hydrogen on sintered alpha-silicon carbide

Sintered alpha-silicon carbide was exposed to pure, dry hydrogen at high temperatures for times up to 500 hr. Weight loss and corrosion were seen after 50 hr at temperatures as low as 1000 C. Corrosion of SiC by hydrogen produced grain boundary deterioration at 1100 C and a mixture of grain and grain boundary deterioration at 1300 C. Statistically significant strength reductions were seen in samples exposed to hydrogen for times greater than 50 hr and temperatures above 1100 C. Critical fracture origins were identified by fractography as either general grain boundary corrision at 1100 C or as corrosion pits at 1300 C. A maximum strength decrease of approximately 33 percent was seen at 1100 and 1300 C after 500 hr exposure to hydrogen. A computer assisted thermodynamic program was also used to predict possible reaction species of SiC and hydrogen.

Hallum, G. W.↗
NASA NTRS1987

Silicon carbide sintered body manufactured from silicon carbide powder containing boron, silicon and carbonaceous additive

A silicon carbide powder of a 5-micron grain size is mixed with 0.15 to 0.60 wt% mixture of a boron compound, i.e., boric acid, boron carbide (B4C), silicon boride (SiB4 or SiB6), aluminum boride, etc., and an aluminum compound, i.e., aluminum, aluminum oxide, aluminum hydroxide, aluminum carbide, etc., or aluminum boride (AlB2) alone, in such a proportion that the boron/aluminum atomic ratio in the sintered body becomes 0.05 to 0.25 wt% and 0.05 to 0.40 wt%, respectively, together with a carbonaceous additive to supply enough carbon to convert oxygen accompanying raw materials and additives into carbon monoxide.

Tanaka, Hidehiko↗
NASA NTRS1986

Sintering, microstructural, radiographic, and strength characterization of a high-purity Si3N4-based composition

A commercially available high purity alpha-Si3N4 powder (UBE SN-E10) was characterized, milled with additives, and sintered in a high-pressure nitrogen atmosphere at temperatures ranging from 1750 to 2140 C. The composition selected for this study has been previously examined using a different alpha-Si3N4 powder. Densification behavior, microstructure characteristics, X-radiographic appearance, room- and high-temperatures flexural strength, and fracture-initiating flaw sites were determined. The high-temperature flexural strengths significantly exceeded those observed in the earlier studies using an identical composition (different alpha-Si3N4 powder) and similar processing techniques.

Kiser, J. D.↗
NASA NTRS1987

Fracture of flash oxidized, yttria-doped sintered reaction-bonded silicon nitride

The oxidation behavior of a slip cast, yttria-doped, sintered reaction-bonded silicon nitride after 'flash oxidation' was investigated. It was found that both the static oxidation resistance and flexural stress rupture life (creep deformation) were improved at 1000 C in air compared to those of the same material without flash oxidation. Stress rupture data at high temperatures (1000 to 1200 C) are presented to indicate applied stress levels for oxidation-dependent and independent failures.

Govila, R. K.↗
NASA NTRS1986

Slow crack growth in sintered silicon nitride

The strength and crack growth characteristics of a sintered silicon nitride were studied at 1000 C. Fractographic analysis of material failing in dynamic fatigue revealed the presence of slow crack growth (SCG) at stressing rates below 6 ksi/min. This material can sustain a 40-ksi flexural stress at 1000 C for 400 h or more but is susceptible to both SCG and creep deformation at higher stress levels. The crack velocity exponent (N) determined both from dynamic and static fatigue experiments lies in a range from 13 to 22. The subcritical crack growth and creep behavior at 1000 C is primarily controlled by the deformation of an intergranular glassy phase.

Khandelwal, P. K.↗
NASA NTRS1986

Determination of the Darcy permeability of porous media including sintered metal plugs

Sintered-metal porous plugs with a normal size of the order of 1-10 microns are used to evaluate the Darcy permeability of laminar flow at very small velocities in laminar fluids. Porous media experiment results and data adduced from the literature are noted to support the Darcy law analog for normal fluid convection in the laminar regime. Low temperature results suggest the importance of collecting room temperature data prior to runs at liquid He(4) temperatures. The characteristic length diagram gives a useful picture of the tolerance range encountered with a particular class of porous media.

Frederking, T. H. K.↗
NASA NTRS1988

Nondestructive evaluation of sintered ceramics

Radiography and several acoustic and thermoacoustic microscopy techniques are investigated for application to structural ceramics for advanced heat engines. A comparison is made of the results obtained from the use of scanning acoustic microscopy (SAM), scanning laser acoustic microscopy (SLAM), and thermoacoustic microscopy (TAM). These techniques are evaluated on research samples of green and sintered monolithic silicon nitrides and silicon carbides in the form of modulus-of-rupture (MOR) bars containing deliberately introduced flaws. Strengths and limitations of the techniques are described, with the emphasis being on statistics of detectability of flaws that constitute potential fracture origins. Further, it is shown that radiographic evaluation and guidance helped develop uniform high-density Si3N4 MOR bars with improved four-point flexural strength (875, 544, and 462 MPa at room temperature, 1200 C, 1370 C, respectively) and reduced scatter in bend strength.

Baaklini, George Y.↗
NASA NTRS1987

High frequency ultrasonic characterization of sintered SiC

High frequency (60 to 160 MHz) ultrasonic nondestructive evaluation was used to characterize variations in density and microstructural constituents of sintered SiC bars. Ultrasonic characterization methods included longitudinal velocity, reflection coefficient, and precise attenuation measurements. The SiC bars were tailored to provide bulk densities ranging from 90 to 98 percent of theoretical, average grain sizes ranging from 3.0 to 12.0 microns, and average pore sizes ranging from 1.5 to 4.0 microns. Velocity correlated with specimen bulk density irrespective of specimen average grain size, average pore size, and average pore orientation. Attenuation coefficient was found to be sensitive to both density and average pore size variations, but was not affected by large differences in average grain size.

Baaklini, George Y.↗
NASA NTRS1987

Dynamic and static fatigue behavior of sintered silicon nitrides

The dynamic and static fatigue behavior of Kyocera SN220M sintered silicon nitride at 1000 C was studied. Fractographic analysis of the material failing in dynamic fatigue revealed the presence of slow crack growth (SCG) at stressing rates below 41 MPa/min. Under conditions of static fatigue this material also displayed SCG at stresses below 345 MPa. SCG appears to be controlled by microcracking of the grain boundaries. The crack velocity exponent (n) determined from both dynamic and static fatigue tests ranged from 11 to 16.

Chang, J.↗
NASA NTRS1987

Strength characterization of yttria/alumina-doped sintered silicon nitride

The flexural strength of yttria/alumina-doped sintered silicon nitride (Ford Material-RM 20) was measured as a function of temperature (20 to 1400 deg C), applied stress and time. Flexural stress rupture testing at 800 and 1000 deg C indicated that the material can sustain 344 MPa and 276 MPa, respectively, without failure, for a limited time (less than or equal to 100 h). The RM 20 material was susceptible to both oxidation and early stages of creep deformation at temperatures above 1000 deg C and displayed extensive creep deformation and degradation in strength above 1300 deg C.

Govila, R. K.↗
NASA NTRS1988

Effect of high-temperature hydrogen exposure on sintered alpha-SiC

Sintered alpha-silicon carbide was exposed to pure, dry hydrogen at high temperatures for times up to 500 hr. Weight loss and corrosion were seen after 50 hr at temperatures as low as 1000 C. Corrosion of SiC by hydrogen produced grain boundary deterioration at 1100 C and a mixture of grain and grain boundary deterioration at 1300 C. Statistically significant strength reductions were seen in samples exposed to hydrogen for times greater than 50 hr and temperatures above 1100 C. Critical fracture origins were identified by fractography as either general grain boundary corrosion at 1100 C or as corrosion pits at 1300 C. A maximum strength decrease of approximately 33 percent was seen at 1100 and 1300 C after 500 hr exposure to hydrogen. A computer assisted thermodynamic program was also used to predict possible reaction species of SiC and hydrogen.

Hallum, Gary W.↗