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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Semiconductor crystal growth in crossed electric and magnetic fields: Center Director's Discretionary Fund

A unique growth cell was designed in which crossed electric and magnetic fields could be separately or simultaneously applied during semiconductor crystal growth. A thermocouple was inserted into an InSb melt inside the growth cell to examine the temperature response of the fluid to applied electromagnetic fields. A static magnetic field suppressed time-dependent convection when a destabilizing thermal field was applied. The simultaneous application of electric and magnetic fields resulted in forced convection in the melt. The InSb ingots grown in the cell were polycrystalline. An InGaSb crystal, 0.5 cm in diameter and 23-cm long, was grown without electromagnetic fields applied. The axial composition results indicated that complete mixing in the melt occurred for this large aspect ratio.

Mazuruk, K.↗
NASA NTRS1996

Constitutive Models for Shape Memory Alloy Polycrystals

Shape memory alloys (SMA) exhibiting the superelastic or one-way effects can produce large recoverable strains upon application of a stress. In single crystals this stress and resulting strain are very orientation dependent. We show experimental stress/strain curves for a Ni-Al single crystal for various loading orientations. Also shown are model predictions; the open and closed circles indicate recoverable strains obtained at various stages in the transformation process. Because of the strong orientation dependence of shape memory properties, crystallographic texture can be expected to play an important role in the mechanical behavior of polycrystalline SMA. It is desirable to formulate a constitutive model to better understand and exploit the unique properties of SMA.

Comstock, R. J., Jr.↗
NASA NTRS1997

Creep and Rupture Strength of an Advanced CVD SiC Fiber

In the as-produced condition the room temperature strength (approx. 6 GPa) of Textron Specialty Materials' 50 microns CVD SiC fiber represents the highest value thus far obtained for commercially produced polycrystalline SiC fibers. To understand whether this strength can be maintained after composite processing conditions, high temperature studies were performed on the effects of time, stress, and environment on 1400 deg. C tensile creep strain and stress rupture on as-produced, chemically vapor deposited SiC fibers. Creep strain results were consistent, allowing an evaluation of time and stress effects. Test environment had no influence on creep strain but I hour annealing at 1600 deg. C in argon gas significantly reduced the total creep strain and increased the stress dependence. This is attributed to changes in the free carbon morphology and its distribution within the CVD SiC fiber. For the as-produced and annealed fibers, strength at 1400 deg. C was found to decrease from a fast fracture value of 2 GPa to a 100-hr rupture strength value of 0. 8 GPa. In addition a loss of fast fracture strength from 6 GPa is attributed to thermally induced changes in the outer carbon coating and microstructure. Scatter in rupture times made a definitive analysis of environmental and annealing effects on creep strength difficult.

Goldsby, J. C.↗
NASA NTRS1996

Characterization of Hybrid Ferroelectric/HTS Thin Films for Tunable Microwave Components

Since the discovery of High-Temperature-Superconductors (HTS) in 1986, a diversity of HTS-based microwave components has been demonstrated. Because of their low conductor losses, HTS-based components are very attractive for integration into microwave circuits for space communication systems. Recent advancements have made deposition of ferroelectric thin films onto HTS thin films possible. Due to the sensitivity of the ferroelectric's dielectric constant (epsilon(sub r)) to an externally applied electric field (E), ferroelectric/superconducting structures could be used in the fabrication of low loss, tunable microwave components. In this paper, we report on our study of Ba(0.5)Sr(0.5)TiO3/YBa2Cu3O(7-delta) and Ba(0.08)Sr(0.92)TiO3/YBa2Cu3O(7-delta) ferroelectric/superconducting thin films on lanthanum aluminate (LaAlO3) substrates. For the (Ba:Sr, 0.50:0.50) epitaxial sample, a epsilon(sub r) of 425 and a loss tangent (tan delta) of 0.040 were measured at 298 K, 1.0 MHz, and zero applied E. For the same sample, a epsilon(sub r) of 360 and tan delta of 0.036 were obtained at 77 K, 1.0 MHz, and zero applied E. Variations in epsilon(sub r) from 180 to 360 were observed over an applied E range of 0V/cm less than or equal to E less than or equal to 5.62 x 10(exp 4) V/cm with little change in tan delta. However, the range of epsilon(sub r) variation for the polycrystalline (Ba:Sr, 0.08:0.92) sample over 0V/cm less than or equal to E less than or equal to 4.00 x 10(exp 4) V/cm was only 3.6 percent while tan delta increased markedly. These results indicate that a lack of epitaxy between the ferroelectric and superconducting layers decreases tuning and increases microwave losses.

Winters, M. D.↗
NASA NTRS1994

Processing and Mechanical Properties of Directionally Solidified NiAl/NiAlTa Alloys

Promising creep strengths were found for a directionally solidified NiAl-NiAlTa alloy when compared to other NiAl based intermetallics. The directionally solidified alloy had an off-eutectic composition that resulted in microstructures consisting of NiAl dendrites surrounded by aligned eutectic regions. The room temperature toughness of the two phase alloy was similar to that of polycrystalline NiAl even with the presence of the brittle Laves phase NiAlTa. Alloying additions that may improve the room temperature toughness by producing multiphase alloys are discussed.

Johnson, D. R.↗
NASA NTRS1996

Elevated Temperature Compressive Properties of Zr-Modified Nial

Small Zr additions are known to substantially affect the deformation behavior and strength of polycrystalline NiAl, yet little information is currently available regarding the high-temperature properties of such alloys. Utilizing prealloyed powder technology, a series of four NiAl alloys have been produced containing from 0.05 to 0.7 at. pct Zr. The creep behavior of these alloys was characterized in compression between 1000 and 1400 K at strain rates ranging from approx. O.1 to 10(exp -9)/ sec. All the Zr-modified alloys were significantly stronger than binary NiAl under lower temperature and faster strain-rate conditions; however, the single-phase materials (Zr less than or equal to 0.1 at. pct) and binary NiAl had similar strengths at high temperatures and slow strain rates. The two-phase NiAl-Ni, AlZr alloys containing 0.3 and 0.7 at. pct Zr had nearly identical strengths. While the two-phase alloys were stronger than the single-phase materials at all test conditions, the degree of microstructural damage in the two-phase alloys due to internal oxidation during testing appeared to increase with Zr level. Balancing the poor oxidation behavior with the consistent strength advantage of the two-phase alloys, it is concluded that optimum elevated-temperature properties could be obtained in Heusler-strengthened NiAl containing between 0.1 and 0.3 at. pct Zr.

Whittenberger, J. Daniel↗
NASA NTRS1995

Effects of Surface Treatments on Secondary Electron Emission from CVD Diamond Films

Secondary electron emission (SEE) properties of polycrystalline diamond films grown by chemical vapor deposition (CVD) were measured. The total secondary yield (sigma) from as-grown samples was observed to be as high as 20 at room temperature and 48 while heating at 700 K in vacuum. Electron-beam-activated, alkali-terminated diamond films have shown stable values of sigma as high as 60 when coated with CsI and similarly high values when coated with other alkali halides. Diamond coated with BaF2 had a stable sigma of 6, but no enhancement of the SEE properties was observed with coatings of Ti or Au. Hydrogen was identified to give rise to this effect in as-grown films. However, electron beam exposure led to a reduction in sigma values as low as 2. Exposure to a molecular hydrogen environment restored sigma to its original value after degradation, and enabled stable secondary emission during electron beam exposure. Atomic hydrogen and hydrogen plasma treatments were performed on diamond/Mo samples in an attempt to increase the near-surface hydrogen concentration which might lead to increased stability in the secondary emission. Raman scattering analysis, scanning electron microscopy, and Auger electron spectroscopy (AES) confirmed that hydrogen plasma and atomic hydrogen treatments improved the quality of the CVD diamond significantly. Elastic recoil detection (ERD) showed that heating as-grown diamond targets to 7OO K, which was correlated with an increase in sigma, removed contaminants from the surface but did not drive hydrogen from the diamond bulk. ERD showed that the hydrogen plasma treatment produced an increase in the hydrogen concentration in the near-surface region which did not decrease while heating in vacuum at 700 K, but no improvement in the SEE properties was observed.

Mearini, G. T.↗
NASA NTRS1997

Multiplexed Holographic Data Storage in Bacteriorhodopsin

High density optical data storage, driven by the information revolution, remains at the forefront of current research areas. Much of the current research has focused on photorefractive materials (SBN and LiNbO3) and polymers, despite various problems with expense, durability, response time and retention periods. Photon echo techniques, though promising, are questionable due to the need for cryogenic conditions. Bacteriorhodopsin (BR) films are an attractive alternative recording medium. Great strides have been made in refining BR, and materials with storage lifetimes as long as 100 days have recently become available. The ability to deposit this robust polycrystalline material as high quality optical films suggests the use of BR as a recording medium for commercial optical disks. Our own recent research has demonstrated the suitability of BR films for real time spatial filtering and holography. We propose to fully investigate the feasibility of performing holographic mass data storage in BR. Important aspects of the problem to be investigated include various data multiplexing techniques (e.g. angle- amplitude- and phase-encoded multiplexing, and in particular shift-multiplexing), multilayer recording techniques, SLM selection and data readout using crossed polarizers for noise rejection. Systems evaluations of storage parameters, including access times, memory refresh constraints, erasure, signal-to-noise ratios and bit error rates, will be included in our investigations.

Mehrl, David J.↗
NASA NTRS1995

Creep of Refractory Fibers and Modeling of Metal and Ceramic Matrix Composite Creep Behavior

Our concentration during this research was on the following subprograms. (1) Ultra high vacuum creep tests on 218, ST300 and WHfC tungsten and MoHfC molybdenum alloy wires, temperature range from 1100 K to 1500 K, creep time of 1 to 500 hours. (2) High temperature vacuum tensile tests on 218, ST300 and WHfC tungsten and MoHfC molybdenum alloy wires. (3) Air and vacuum tensile creep tests on polycrystalline and single crystal alumina fibers, such as alumina-mullite Nextel fiber, yttrium aluminum ganet (YAG) and Saphikon, temperature range from 1150 K to 1470 K, creep time of 2 to 200 hours. (4) Microstructural evaluation of crept fibers, TEM study on the crept metal wires, SEM study on the fracture surface of ceramic fibers. (5) Metal Matrix Composite creep models, based on the fiber creep properties and fiber-matrix interface zone formation.

Tewari, S.N.↗
NASA NTRS1997

Electrodeposited CuInSe2 Thin Film Junctions

We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

Raffaelle, R. P.↗
NASA NTRS1995

Directional Solidification and Mechanical Properties of NiAl-NiAlTa Alloys

Directional solidification of eutectic alloys is a promising technique for producing in-situ composite materials exhibiting a balance of properties. Consequently, the microstructure, creep strength and fracture toughness of directionally solidified NiAl-NiAlTa alloys were investigated. Directional solidification was performed by containerless processing techniques to minimize alloy contamination. The eutectic composition was found to be NiAl-15.5 at% Ta and well-aligned microstructures were produced at this composition. A near-eutectic alloy of NiAl-14.5Ta was also investigated. Directional solidification of the near-eutectic composition resulted in microstructures consisting of NiAl dendrites surrounded by aligned eutectic regions. The off-eutectic alloy exhibited promising compressive creep strengths compared to other NiAl-based intermetallics, while preliminary testing indicated that the eutectic alloy was competitive with Ni-base single crystal superalloys. The room temperature toughness of these two-phase alloys was similar to that of polycrystalline NiAl even with the presence of the brittle Laves phase NiAlTa.

Johnson, D. R.↗
NASA NTRS1995

1200 K Compressive Properties of N-Containing Nial

As part of a series of experiments to understand the role of N on the strength of NiAl, a heat of NiAl was enriched with N by melting and atomization to powder in a nitrogen atmosphere. Following consolidation of the powder by hot extrusion, 1200 K compressive properties were measured in air. Within the range of strain rates examined, 10 exp -3 to 10 exp -9/s, the strength of the N-enriched NiAl was greater than that of a simple 15 micron grain size polycrystalline, binary NiAl alloy. For the most part the overall improvement in strength is ascribed to the fine grain size of the N-doped NiAl rather than the alloy chemistry; however, the alloy displayed a complex behavior exhibiting both weakening effects as well as strengthening ones.

Whittenberger, J. D.↗
NASA NTRS1998

Fiber Optic Cable Feedthrough and Sealing

A novel fiberoptic hermetic bulkhead feedthrough has been developed which will offer cryogenic sealing at leak rates of 10(exp -11) cc/sec helium. This feedthrough was developed for NASA in response to needs for a hermetically sealed feedthrough which could withstand a range of temperatures from low cryogenic (-196 C), due to liquid fuels and oxidizers, to high temperatures (+200 C) encountered in the proximity of combustion gasses. The development effort will be reported from conceptual design of single and multi-channel feedthrough units with single interconnection interfaces to units with double-ended interconnection interfaces. Various combinations of fiber/buffers are reported with recommendations based on test results. A comprehensive series of environmental and mechanical tests were performed to evaluate the feedthroughs in adverse conditions. Test results are reported including insertion loss, salt spray, sinusoidal vibration, random vibration, mechanical shock, thermal shock and humidity. A second set of feedthrough units was exposed to 3 different types of radiation. Optical transmittance changes during the tests were monitored and leak rate testing was done after each test. State-of-the-art technology in optical fiber feedthroughs constructed with polycrystalline ceramic is presented.

Fan, Robert J.↗
NASA NTRS1998

Microstructural, Chemical and Mechanical Characterization of Polymer-Derived Hi-Nicalon Fibers with Surface Coatings

Room temperature tensile strengths of as-received Hi-Nicalon fibers and those having BN/SiC, p-BN/SiC, and p-B(Si)N/SiC surface coatings, deposited by chemical vapor deposition, were measured using an average fiber diameter of 13.5 microns. The Weibull statistical parameters were determined for each fiber. The average tensile strength of uncoated Hi-Nicalon on was 3.19 +/- 0.73 GPa with a Weibull modulus of 5.41. Strength of fibers coated with BN/SiC did not change. However, coat with p-BN/SiC and p-B(Si)N/SiC surface layers showed strength loss of approx. 10 and 35 percent, respectively, compared with as-received fibers. The elemental compositions of the fibers and the coatings were analyzed using scanning Auger microprobe and energy dispersive x-ray spectroscopy. The BN coating was contaminated with a large concentration of carbon and some oxygen. In contrast, p-BN, p-B(Si)N, and SiC coatings did not show any contamination. Microstructural analyses of the fibers and the coatings were done by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected area electron diffraction. Hi-Nicalon fiber consists of the P-SIC nanocrystals ranging in size from 1 to 30 nm embedded in an amorphous matrix. TEM analysis of the BN coating revealed four distinct layers with turbostatic structure. The p-BN layer was turbostratic and showed considerable preferred orientation. The p-B(Si)N was glassy and the silicon and boron were uniformly distributed. The silicon carbide coating was polycrystalline with a columnar structure along the growth direction. The p-B(Si)N/SiC coatings were more uniform, less defective and of better quality than the BN/SiC or the p-BN/SiC coatings.

Bansal, Narottam P.↗
NASA NTRS1995

ZnSe Window Layers for GaAs and GaInP2 Solar Cells

This report concerns studies of the use of ZnSe as a window layer for GaAs solar cells. Well-oriented crystalline ZnSe films on (100) single crystal GaAs substrates were grown by MOCVD. In particular, ZnSe films were grown by reacting a zinc adduct with hydrogen selenide at temperatures in the range of 200 C to 400 C. X-ray diffraction studies and images obtained with an atomic force microscope determined that the films were highly oriented but were polycrystalline. Particular emphasis was placed on the use of a substrate temperature of 350 C. Using iodine as a dopant, n-type ZnSe films with resistivities in the range of .01 to .05 ohm-cm were grown on semi-insulating GaAs. Thus procedures have been developed for investigating the utility of n-type ZnSe window layers on n/p GaAs structures. Studies of recombination at n-ZnSe/n-GaAs interfaces in n-ZnSe/n-GaAs/p-GaAs cell structures are planned for future work.

Olsen, Larry C.↗
NASA NTRS1999

High Temperature Mechanical Characterization and Analysis of Al2O3 /Al2O3 Composition

Sixteen ply unidirectional zirconia coated single crystal Al2O3 fiber reinforced polycrystalline Al2O3 was tested in uniaxial tension at temperatures to 1400 C in air. Fiber volume fractions ranged from 26 to 31%. The matrix has primarily open porosity of approximately 40%. Theories for predicting the Young's modulus, first matrix cracking stress, and ultimate strength were applied and evaluated for suitability in predicting the mechanical behavior of Al2O3/Al2O3 composites. The composite exhibited pseudo tough behavior (increased area under the stress/strain curve relative to monolithic alumina) from 22 to 1400 C. The rule-of-mixtures provides a good estimate of the Young's modulus of the composite using the constituent properties from room temperature to approximately 1200 C for short term static tensile tests in air. The ACK theory provides the best approximation of the first matrix cracking stress while accounting for residual stresses at room temperature. Difficulties in determining the fiber/matrix interfacial shear stress at high temperatures prevented the accurate prediction of the first matrix cracking stress above room temperature. The theory of Cao and Thouless, based on Weibull statistics, gave the best prediction for the composite ultimate tensile strength.

Gyekenyesi, John Z.↗
NASA NTRS1998

Electrodeposited CulnSe2 Thin Film Junctions

We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.

Raffaelle, R. P.↗
NASA NTRS1996

Preparation and Thermoelectric Properties of the Skutterudite-Related Phase Ru(0.5)Pd(0.5)Sb3

A new skutterudite phase Ru(0.5)Pd(0.5)Sb3 was prepared. This new phase adds to a large number of already known materials with the skutterudite structure which have shown good potential for thermoelectric applications. Single phase, polycrystalline samples were prepared and characterized by x-ray analysis, electron probe microanalysis, density, sound velocity, thermal-expansion coefficient, and differential thermal analysis measurements. Ru(0.5)Pd(0.5)Sb3 has a cubic lattice, space group Im3 (T(sup 5, sub h)), with a = 9.298 A and decomposes at about 920 K. The Seebeck coefficient, the electrical resistivity, the Hall effect, and the thermal conductivity were measured on hot-pressed samples over a wide range of temperatures. Preliminary results show that Ru(0.5)Pd(0.5)Sb3 behaves as a heavily doped semiconductor with an estimated band gap of about 0.6 eV. The lattice thermal conductivity of Ru(0.5)Pd(0.5)Sb3 is substantially lower than that of the binary isostructural compounds CoSb3 and IrSb3. The unusually low thermal conductivity might be explained by additional hole and charge transfer phonon scattering in this material. The potential of this material for thermoelectric applications is discussed.

Caillat, T.↗