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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Microstructural study and simulation of intrinsic two-way shape memory behavior of functionally graded Ni-rich/NiTiCu thin film

Highlights: • Ni-rich/Ti-rich bi-layer thin film was deposited on Si by using DC magnetron sputtering. • The bi-layer exhibits the gradient structure and mechanical properties through the thickness. • The bi-layer shows intrinsic two-way shape memory effect due to functionally graded structure. • The intrinsic two-way shape memory effect was confirmed by finite element simulation. - Abstract: In this research, the gradient structure and mechanical properties of an austenitic/martensitic (Ni{sub 50.8}Ti/Ni{sub 45}TiCu{sub 5} (at.%)) bi-layer thin film was investigated. The bi-layer was deposited on a Si substrate using DC magnetron sputtering. After crystallization of the film at 773 K for 60 min, the microstructure and mechanical properties of the bi-layer thin film were characterized using X-ray diffraction (XRD), transmission electron microscopy (STEM and HRTEM) and nanoindentation, respectively. The diffraction pattern illustrated that the crystallized bi-layer was combined of martensitic and austenitic layers while secondary ion mass spectroscopy (SIMS) and high resolution transmission electron microscopy analysis demonstrated the existence of a compositional gradient through the thickness and residual strain in the interface of the bi-layer, respectively. Furthermore, the compositional gradient in the bi-layer led to gradual variations in the structure, hardness and Young's modulus through the thickness of the bi-layer. The intrinsic two-way shape memory effect due to its functionally graded structure and the induced stress was confirmed by experimental test and finite element simulation.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Investigations on the electronic, structural, magnetic properties related to shape-memory behavior in Ti{sub 2}CoX (X=Al, Ga, In)

Highlights: • The analysis of phase stability trend is studied for Ti{sub 2}CoX(X = Al, Ga, In). • Ti{sub 2}CoGa is more suitable as shape memory alloy. • Total magnetic moments disappear with a increase of c/a ratio for all systems. • Density of states at the Fermi level are also shown. - Abstract: Using the full-potential local orbital minimum-basis method, we have performed a systematic investigations on the electronic, structural, and magnetic properties related to shape memory applications for Ti{sub 2}CoX (X=Al, Ga, In) alloys. Our results confirm that these alloys are half-metallic ferromagnets with total magnetic moment of 2μ{sub B} per formula unit in austenite phase, and undergo a martensitic transformation at low temperatures. The relative stabilities of the martensitic phases differ considerably between Ti{sub 2}CoX (X=Al, Ga, In). Details of the electronic structures suggest that the differences in hybridizations between the magnetic components are responsible for trends of phase. Quantitative estimates for the energetics and the magnetizations indicate that Ti{sub 2}CoGa is a promising candidate for shape memory applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Controlling shape memory effects in NiTi thin films grown on Ru seed layer

NiTi thin films with robust shape memory effects and low deposition temperatures are greatly desired for microelectronic devices. However, sub-micron films deposited below 425 °C usually have amorphous structure and must be post-annealed to achieve full crystallization. In this article, using Ru as a seed layer, we demonstrate growth of NiTi films as thin as 120 nm with in-situ crystallization at 325 °C. NiTi thin films with a wide range of growth parameters including deposition temperature and film thickness were investigated. Shape memory effects were characterized using stress bow and resistivity studies. Structural information across the R-phase to austenite transformation was obtained using X-ray diffraction. NiTi thin films exhibited a narrow hysteresis during R-phase to austenite phase transition near 60 °C while possessing good shape memory properties.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Molecularly Thin Electrolyte for All Solid-State Nonvolatile Two-Dimensional Crystal Memory

A molecularly thin electrolyte is developed to demonstrate a nonvolatile, solid-state, one-transistor (1T) memory based on an electric-double-layer (EDL) gated WSe 2 field-effect transistor (FET). The custom-designed monolayer electrolyte consists of cobalt crown ether phthalocyanine and lithium ions, which are positioned by field-effect at either the surface of the WSe 2 channel or an h-BN capping layer to achieve “1” or “0”, respectively. Bistability in the monolayer electrolyte memory is significantly improved by the h-BN cap with density functional theory (DFT) calculations showing enhanced trapping of Li+ near h-BN due to a ~1.34 eV increase in the absolute value of the adsorption energy compared to vacuum. The threshold voltage shift between the two states corresponds to a change in charge density of ~2.5 × 10 12 cm –2 , and an On/Off ratio exceeding 10 4 at a back gate voltage of 0 V. The On/Off ratio remains stable after 1000 cycles and the retention time for each state exceeds 6 h (max measured). Furthermore, when the write time approaches 1 ms, the On/Off ratio remains >10 2 , showing that the monolayer electrolyte-gated FET can respond on time scales similar to existing flash memory. The data suggest that faster switching times and lower switching voltages could be feasible by top gating.

2D crystal↗
DOE OSTI2019

Revisiting the Analytical Solutions of Heat Transport in Fractured Reservoirs Using a Generalized Multirate Memory Function

Numerous analytical solutions have been developed for modeling thermal perturbations to underground formations caused by deep-well injection of fluids. Each solution has been derived for a specific boundary value problem and a simplified flow network with one set of parallel fractures. In this paper, new generalized solutions G*( x, s ) are developed using (existing) global transfer functions G$^*_0(x,s)$ and a new memory function g*( s ), where x and s are the space and Laplace variable. The memory function represents the solutions of conductive heat exchange between fractures and matrix blocks and between fractured aquifers and unfractured aquitards. The memory function is developed to account for multirate exchange induced by different shapes, sizes, properties, and volumetric fractions of matrix blocks bounded by multiple sets of orthogonal fractures with different spacing. The global transfer functions represent the fundamental solutions to convective, convective-conductive, and convective-dispersive heat transport in fractures (or aquifers) without exchange and are available for various (1-D linear, 1-D radial, 2-D dipole, and single-well injection-withdrawal) flow fields. The new solutions with exchange are developed using $G^*(x,s) = B^*(s)G^*_0{x, s[1 + Θg^*(s)]}$, thereby greatly simplifying solution development in a novel way, where Θ and B*( s ) are a fracture-matrix scaling factor and the boundary condition function. As a result, the new solutions are applied to several example problems, showing that heat transport in fractured aquifers is significantly impacted by (1) thermal dispersion in fractures that is rarely considered, (2) multirate heat exchange with a wide range of size and anisotropy of rectangular matrix blocks, and (3) heat exchange between aquifers and aquitards.

58 GEOSCIENCES↗
DOE OSTI2014

High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼10{sup 5}, a gate leakage current below ∼300 pA, and excellent retention characteristics for over 10{sup 4} s.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Ni-Mn-Ga shape memory nanoactuation

To probe finite size effects in ferromagnetic shape memory nanoactuators, double-beam structures with minimum dimensions down to 100 nm are designed, fabricated, and characterized in-situ in a scanning electron microscope with respect to their coupled thermo-elastic and electro-thermal properties. Electrical resistance and mechanical beam bending tests demonstrate a reversible thermal shape memory effect down to 100 nm. Electro-thermal actuation involves large temperature gradients along the nanobeam in the order of 100 K/μm. We discuss the influence of surface and twin boundary energies and explain why free-standing nanoactuators behave differently compared to constrained geometries like films and nanocrystalline shape memory alloys.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Layer-by-layer charging in non-volatile memory devices using embedded sub-2 nm platinum nanoparticles

In this work, we demonstrate multi-level operation of a non-volatile memory metal oxide semiconductor capacitor by controlled layer-by-layer charging of platinum nanoparticle (PtNP) floating gate devices with defined gate voltage bias ranges. The device consists of two layers of ultra-fine, sub-2 nm PtNPs integrated between Al{sub 2}O{sub 3} tunneling and separation layers. PtNP size and interparticle distance were varied to control the particle self-capacitance and associated Coulomb charging energy. Likewise, the tunneling layer thicknesses were also varied to control electron tunneling to the first and second PtNP layers. The final device configuration with optimal charging behavior and multi-level programming was attained with a 3 nm Al{sub 2}O{sub 3} initial tunneling layer, initial PtNP layer with particle size 0.54 ± 0.12 nm and interparticle distance 4.65 ± 2.09 nm, 3 nm Al{sub 2}O{sub 3} layer to separate the PtNP layers, and second particle layer with 1.11 ± 0.28 nm PtNP size and interparticle distance 2.75 ± 1.05 nm. In this device, the memory window of the first PtNP layer saturated over a programming bias range of 7 V to 14 V, after which the second PtNP layer starts charging, exhibiting a multi-step memory window with layer-by-layer charging.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Defect states and charge trapping characteristics of HfO{sub 2} films for high performance nonvolatile memory applications

In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO{sub 2}-Si (MHOS) structure. The devices based on 800 °C annealed HfO{sub 2} film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10{sup 4 }s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO{sub 2} films. We investigated the defect states in the HfO{sub 2} films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO{sub 2} based MHOS devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electrostatically transparent graphene quantum-dot trap layers for efficient nonvolatile memory

In this study, we have demonstrated nonvolatile memory devices using graphene quantum-dots (GQDs) trap layers with indium zinc oxide (IZO) semiconductor channel. The Fermi-level of GQD was effectively modulated by tunneling electrons near the Dirac point because of limited density of states and weak electrostatic screening in monolayer graphene. As a result, large gate modulation was driven in IZO channel to achieve a subthreshold swing of 5.21 V/dec (300 nm SiO{sub 2} gate insulator), while Au quantum-dots memory shows 15.52 V/dec because of strong electrostatic screening in metal quantum-dots. Together, discrete charge traps of GQDs enable stable performance in the endurance test beyond 800 cycles of programming and erasing. Our study suggests the exciting potential of GQD trap layers to be used for a highly promising material in non-volatile memory devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Direct observation of conductive filament formation in Alq3 based organic resistive memories

This work explores resistive switching mechanisms in non-volatile organic memory devices based on tris(8-hydroxyquinolie)aluminum (Alq{sub 3}). Advanced characterization tools are applied to investigate metal diffusion in ITO/Alq{sub 3}/Ag memory device stacks leading to conductive filament formation. The morphology of Alq{sub 3}/Ag layers as a function of the metal evaporation conditions is studied by X-ray reflectivity, while depth profile analysis with X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry is applied to characterize operational memory elements displaying reliable bistable current-voltage characteristics. 3D images of the distribution of silver inside the organic layer clearly point towards the existence of conductive filaments and allow for the identification of the initial filament formation and inactivation mechanisms during switching of the device. Initial filament formation is suggested to be driven by field assisted diffusion of silver from abundant structures formed during the top electrode evaporation, whereas thermochemical effects lead to local filament inactivation.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Enhanced oxygen vacancy diffusion in Ta{sub 2}O{sub 5} resistive memory devices due to infinitely adaptive crystal structure

Metal oxide resistive memory devices based on Ta{sub 2}O{sub 5} have demonstrated high switching speed, long endurance, and low set voltage. However, the physical origin of this improved performance is still unclear. Ta{sub 2}O{sub 5} is an important archetype of a class of materials that possess an adaptive crystal structure that can respond easily to the presence of defects. Using first principles nudged elastic band calculations, we show that this adaptive crystal structure leads to low energy barriers for in-plane diffusion of oxygen vacancies in λ phase Ta{sub 2}O{sub 5}. Identified diffusion paths are associated with collective motion of neighboring atoms. The overall vacancy diffusion is anisotropic with higher diffusion barriers found for oxygen vacancy movement between Ta-O planes. Coupled with the fact that oxygen vacancy formation energy in Ta{sub 2}O{sub 5} is relatively small, our calculated low diffusion barriers can help explain the low set voltage in Ta{sub 2}O{sub 5} based resistive memory devices. Our work shows that other oxides with adaptive crystal structures could serve as potential candidates for resistive random access memory devices. We also discuss some general characteristics for ideal resistive RAM oxides that could be used in future computational material searches.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Memory effects in a Al/Ti:HfO{sub 2}/CuPc metal-oxide-semiconductor device

Metal oxide semiconductor structured organic memory device has been successfully fabricated. Ti doped hafnium oxide (Ti:HfO{sub 2}) nanoparticles has been fabricated by precipitation method and further calcinated at 800 °C. Copper phthalocyanine, a hole transporting material has been utilized as an organic semiconductor. The electrical properties of the fabricated device have been studied by measuring the current-voltage and capacitance-voltage characteristics. The amount of charge stored in the nanoparticles has been calculated by using flat band condition. This simple approach for fabricating MOS memory device has opens up opportunities for the development of next generation memory devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Projection multiplex recording of computer-synthesised one-dimensional Fourier holograms for holographic memory systems: mathematical and experimental modelling

A multiplex method of recording computer-synthesised one-dimensional Fourier holograms intended for holographic memory devices is proposed. The method potentially allows increasing the recording density in the previously proposed holographic memory system based on the computer synthesis and projection recording of data page holograms. (holographic memory)

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2017

Optimal periodic frequency combs for high-efficiency optical quantum memory based on rare-earth ion crystals

The possibility of enhancing the quantum efficiency of photon echo broadband quantum memory in rare-earth-ion-doped crystals with a frequency comb structure of optical transition inhomogeneous broadening is studied. We have found the optimal parameters of the frequency combs for implementing the pre-assigned quantum efficiency in the chosen spectral range of the optical transitions of rare-earth ions with real parameters. The obtained results allow the conditions to be formulated for increasing the efficiency of broadband quantum memory. The possibilities of experimental implementation of such memory are also discussed. (paper)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Self-assembly of wood-based shape memory composites triggered by solar-thermal energy

Transporting and assembling large, complex structures poses significant challenges due to their size, geometry, and cost. Additionally, the installation sites are often inaccessible or hazardous for humans, necessitating self-assembling capabilities in these structures. To mitigate these challenges, we propose using 3D printing materials with shape memory effect (SME) for both transport and construction. This approach involves developing 3D modular components into flat sheets for easier transportation, and then self-assembling into 3D structures on-site using solar energy. To gain a deeper understanding of the factors influencing material memory performance, we have chosen a composite PLA/WF, which is polylactic acid (PLA) with 20 wt% wood flour (WF) for this purpose, leveraging its high tensile modulus at 0.966 GPa, low cost, and sustainability. Printed shapes with this material can maintain a recovery ratio over 90% after 3 cycles. While traditional composites fillers (e.g. glass or carbon fiber) are added to enhance mechanical and thermal properties, the addition of bio-based fillers like WF accomplish similar goals without compromising sustainability. We conducted multiple experiments to demonstrate how environmental conditions (i.e. temperature) maximize the material’s SME. Although still at an early stage, this study provides initial insights into bridging the gap between the small-scale nature of shape memory polymers (SMPs) and their potential for large-scale additive manufacturing, addressing a critical need for efficient and sustainable construction. In the long term, we hope our study contributes to the design vision of utilizing SMPs for transportation, assembly, and deployment of complex structures, providing a new pathway for sustainable construction and transportation of large-scale structures to hard-to-access locations such as disaster-affected areas and remote deserts, etc.

4D printing↗
DOE OSTI2022

Artificial spin ice phase-change memory resistors

Abstract We present a proposal for realization of an electrical memory reminiscent of a memristor in connected Kagome artificial spin ice. We show that current flowing through the system alters the magnetic ensemble, which in turns controls the overall resistance thus leaving memory of current passage in the system. This introduces a current-dependent effect for a dynamic resistive state. We simulate a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe electrical memory behavior with an I – V hysteretic pinched loop, typical of memristors. These results can be extended to the more complex geometries in which artificial spin ice can be designed to engineer the hysteresis curve.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗