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At least 703 records · Page 39

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NASA NTRS1982

Simple phenomenological modeling of transition-region capacitance of forward-biased p-n junction diodes and transistor diodes

The derivation of a simple expression for the capacitance C(V) associated with the transition region of a p-n junction under a forward bias is derived by phenomenological reasoning. The treatment of C(V) is based on the conventional Shockley equations, and simpler expressions for C(V) result that are in general accord with the previous analytical and numerical results. C(V) consists of two components resulting from changes in majority carrier concentration and from free hole and electron accumulation in the space-charge region. The space-charge region is conceived as the intrinsic region of an n-i-p structure for a space-charge region markedly wider than the extrinsic Debye lengths at its edges. This region is excited in the sense that the forward bias creates hole and electron densities orders of magnitude larger than those in equilibrium. The recent Shirts-Gordon (1979) modeling of the space-charge region using a dielectric response function is contrasted with the more conventional Schottky-Shockley modeling.

Lindholm, F. A.↗

DOE OSTI2022

Novel and effective surface passivation for high efficiency n- and p-type Silicon solar cell

The project objective was to develop a novel Si surface passivation method using chalcogens, sulfur (S) and/or selenium (Se), as passivating elements, to withstand industry-standard high temperature contacting and metallization schemes for p-type Si based passivated emitter and rear contact (p-PERC) solar cells. The back surface passivation of PERC cells has been improved drastically with the invention and successful application of an Al 2 O 3 passivation layer. However, the front n + diffused junction surface is still poorly passivated by the standard amorphous silicon nitride (SiNx) anti-reflection coating (ARC) layer. This project sought to address the passivation challenges of both front n+ emitter and undiffused p-Si back surface. Improved p-PERC solar cell performance with open circuit voltage (V OC ) > 680 mV and efficiency of 22% were targeted to validate superior defect passivation properties as compared to standard SiO 2 / Al 2 O 3 passivation. During this project, we systematically investigated process-structure-properties-performance relationships of this novel advanced defect passivation approach. The S/Se passivation was carried out by reacting industrial Czochralski (Cz) Si wafers in H 2 S and H 2 Se gases in a chemical vapor deposition (CVD) reactor at temperatures up to 700°C. After an exhaustive optimization of the process parameters (temperature, time, and gas concentration), we established an optimized process and demonstrated extremely low surface recombination velocities (SRVs) of 1.5 cm/s and 8 cm/s on n-type and p-type Si, respectively, by S-passivation. In-depth surface and interface characterization were performed using soft x-ray and photoelectron spectroscopies (XPS, UPS, XES), combined with capacitance-voltage-frequency (C-V-f) measurements, to decipher the surface chemical/electronic structure and interface defect state densities. These measurements provided critical understanding of the defect passivation mechanism and elucidated the presence of surface S-Si bonds, a reduction of surface dipoles, and low interface state densities (D it ) < 10 11 cm -2 ev -1 . We also found that the Se-passivation is inferior to the S-passivation (by at least one order of magnitude in SRV). Application of the optimized S-passivation to the n+ diffused emitter surface led to a low surface recombination current density, J0 ≈ 40 fA/cm 2 (~ 1/4 of the industry-standard SiNx-passivation), and high implied V OC (686 mV) in p-PERC solar cell structures. The S-passivation process also was found to improve the bulk quality of the p-type Si, better than the SiO 2 or Al 2 O 3 passivation processes. After successful demonstration of efficient passivation of Si surface defects by S, we extensively studied the air, thermal, and illumination stability of the passivation structure. S-passivation itself degrades in air due to competing reactions with moisture and oxygen to form oxides, which can be eliminated by a SiNx capping layer (also acting as a anti-reflective coating). After SiNx process optimization, we demonstrated illumination and thermally stable S-passivation with SRV < 5 cm/s and J 0 < 80 fA/cm 2 . These enhancements in Si passivation, incorporated into p-PERC cells, achieved an efficiency of 19.93% with V OC = 649 mV, using manufacturing metallization and contacting schemes. The low cell performance (cell V OC is much less than the implied V OC = 686 mV, anticipated from surface passivation) was identified due to degradation of S-passivation during the metal firing step (out-diffusion of S from the Si interface to the SiNx surface). The S-passivation of Si surfaces shows significant promise with excellent passivation quality, essential for high performance (high V OC , high efficiency) solar cells. Integration of this innovative defect passivation into devices, however, demands further development of the capping layer, low temperature (<700°C) metallization process, and/or engineering of advanced device structures. Surface passivation-dominated advanced Si solar cells, such as tunnel oxide passivated contacts and Si heterojunctions, are increasingly of interest due to their high-performance potential and will have a growing photovoltaic market share in the near future.

14 SOLAR ENERGY↗

DOE OSTI2022

AlInP-passivated III–V solar cells grown by dynamic hydride vapor-phase epitaxy

We report the development of AlInP-passivated solar cells grown by dynamic hydride vapor-phase epitaxy (D-HVPE) with AM1.5G efficiencies of 26.0% for single-junction (1J) GaAs cells and 28.0% for GaInP/GaAs (2J) tandems. We compare the device performance of solar cells passivated with AlInP versus control cells passivated with GaInP, which has already enabled near-unity carrier collection in GaAs solar cells. 1J devices passivated with either AlInP or GaInP have an identical open-circuit voltage (V OC ) of 1.06 V and long-wavelength current collection near 95%, indicating that both window materials provide a similar degree of passivation. Adding AlInP passivation to each solar cell structure improves the current collection by 1.3 and 1 mA/cm 2 for the 1J and 2J, respectively. The AlInP also results in a top cell V OC boost of ~40 mV relative to a tandem device passivated only by a thin, highly doped GaInP emitter. Secondary-ion mass spectrometry measurements indicate that although O and Si both incorporate in the AlInP window, they do not appear in the subsequently grown absorber layers and do not impact its ability to passivate the front surface. We expect that these achievements, along with continued optimization, will enable parity of hydride vapor-phase epitaxy (HVPE)-grown device efficiencies with state-of-the-art devices grown by other epitaxial methods in the near future.

14 SOLAR ENERGY↗

DOE OSTI2022

Demand Driven Energy Management for PIPO Auxiliary Power Supply Architecture

In this paper, a demand driven energy management (DDEM) technique is implemented on modular parallel input parallel output DC/DC auxiliary power supply (APS) structure. In this method, modules are brought in/out of the operation making them operate under high loading conditions, avoiding low efficiency under light load. Such a method finds its application in power conservative systems with variable load. Implementation of DDEM and the energy saved is shown using APS comprised of two 15W commercially off-the-shelf DC-DC modules, with 100–1000 VDC input and 24 V output voltage. Along with the DDEM, the lifetime of the power stage devices is controlled minimizing their junction temperature swing through control of cooling system. This control method uses digital twin as interface to virtualize the power devices loading operation/ health condition. Accordingly, no extra sensor or closed loop control required to measure the junction temperature of the devices or feedback the losses to the cooling flow.

Azadeh, Yalda↗

DOE OSTI2021

Demonstration of Passivation Using a Low-Temperature-Grown, Al-Containing Window Layer by HVPE

We present hydride vapor phase epitaxy (HVPE) growth of single junction GaAs solar cells with Al0.4Ga0.6As front passivation layers at a growth temperature of 650°C. Devices achieved a short circuit current density of ~27.52 mA/cm2 after anti-reflection coating, similar to devices that used GaInP windows with the same bandgap, indicating that AlGaAs provides front-surface passivation resulting in a low interface recombination velocity. The low temperature growth of Al containing III-V materials by HVPE allows for compatibility with In-containing alloys in high-efficiency III-V device structures for various applications.

41 EE - Solar Energy Technologies Office (EE-4S)↗

NASA NTRS1978

Methods for the photochemical utilization of solar energy

The paper considers the 'ground rules' which govern the efficiency of photochemical solar energy conversion and then summarizes the most promising approaches in each of three categories: photochemically assisted thermal systems for the heating and/or cooling of structures; photogalvanic systems for the production of electrical power in applications, such as photorechargeable batteries or inexpensive 'solar cells'; and photochemical formation of fuels for combustion and for use as chemical feedstocks or foods. Three concepts for the photochemical utilization of solar energy in space are found to be particularly promising: (1) photochemical trans-cis isomerization of indigold dyes for photoassisted heating or cooling, (2) the redox stabilized photoelectrolysis cell for the production of hydrogen (and/or oxygen or other useful chemicals), and (3) the liquid-junction photovoltaic cell for the production of electrical power.

Schwerzel, R. E.↗

NASA NTRS1985

Silicon MINP solar cells

The MINP solar cell concept refers to a cell structure designed to be a base region dominated device. Thus, it is desirable that recombination losses are reduced to the point that they occur only in the base region. The most unique feature of the MINP cell design is that a tunneling contact is utilized for the metallic contact on the front surface. The areas under the collector grid and bus bar are passivated by a thin oxide of tunneling thickness. Efforts must also be taken to minimize recombination at the surface between grid lines, at the junction periphery and within the emitter. Results of both theoretical and experimental studies of silicon MINP cells are given. Performance calculations are described which give expected efficiencies as a function of base resistivity and junction depth. Fabrication and characterization of cells are discussed which are based on 0.2 ohm-cm substrates, diffused emitters on the order of 0.15 to 0.20 microns deep, and with Mg MIS collector grids. A total area AM 1 efficiency of 16.8% was achieved. Detailed analyses of photocurrent and current loss mechanisms are presented and utilized to discuss future directions of research. Finally, results reported by other workers are discussed.

Olsen, L. C.↗

NASA NTRS1995

Mechanotransduction and the functional response of bone to mechanical strain

Mechanotransduction plays a crucial role in the physiology of many tissues including bone. Mechanical loading can inhibit bone resorption and increase bone formation in vivo. In bone, the process of mechanotransduction can be divided into four distinct steps: (1) mechanocoupling, (2) biochemical coupling, (3) transmission of signal, and (4) effector cell response. In mechanocoupling, mechanical loads in vivo cause deformations in bone that stretch bone cells within and lining the bone matrix and create fluid movement within the canaliculae of bone. Dynamic loading, which is associated with extracellular fluid flow and the creation of streaming potentials within bone, is most effective for stimulating new bone formation in vivo. Bone cells in vitro are stimulated to produce second messengers when exposed to fluid flow or mechanical stretch. In biochemical coupling, the possible mechanisms for the coupling of cell-level mechanical signals into intracellular biochemical signals include force transduction through the integrin-cytoskeleton-nuclear matrix structure, stretch-activated cation channels within the cell membrane, G protein-dependent pathways, and linkage between the cytoskeleton and the phospholipase C or phospholipase A pathways. The tight interaction of each of these pathways would suggest that the entire cell is a mechanosensor and there are many different pathways available for the transduction of a mechanical signal. In the transmission of signal, osteoblasts, osteocytes, and bone lining cells may act as sensors of mechanical signals and may communicate the signal through cell processes connected by gap junctions. These cells also produce paracrine factors that may signal osteoprogenitors to differentiate into osteoblasts and attach to the bone surface. Insulin-like growth factors and prostaglandins are possible candidates for intermediaries in signal transduction. In the effector cell response, the effects of mechanical loading are dependent upon the magnitude, duration, and rate of the applied load. Longer duration, lower amplitude loading has the same effect on bone formation as loads with short duration and high amplitude. Loading must be cyclic to stimulate new bone formation. Aging greatly reduces the osteogenic effects of mechanical loading in vivo. Also, some hormones may interact with local mechanical signals to change the sensitivity of the sensor or effector cells to mechanical load.

Non-NASA Center↗

DOE OSTI2023

Demonstration of p-side down green light emitting diodes with high external quantum efficiencies

GaN/(In,Ga)N heterostructure based visible Light Emitting Diodes (LED) have enabled a wide range of solid-state lighting applications through excellent efficiency and power output in the shorter wavelengths (≤ 475nm) of violet/blue emission. However, the efficiency of emitters in the longer wavelength range (≥ 500nm) drops drastically due to the need to include higher Indium-content in the InGaN quantum wells. Large average polarization fields for high Indium-content quantum wells for conventional P-up structure, opposes the depletion field leading to large electrostatic barriers for both electrons and holes injection. LEDs fabricated along the N-polar direction with a p-up orientation or Ga-polar direction with p-down orientation lower such electrostatic barriers to carrier injection due to alignment of the polarization dipole field and depletion region field. This can therefore theoretically improve the electrical injection efficiency and reduce the forward voltage of operation. Such a Ga-polar p-down LED requires a bottom buried tunnel junction to avoid current spreading issues for a buried p-GaN layer. In this report, we demonstrate for the first time Ga-polar p-down green emitting LEDs using bottom tunnel junctions and having external quantum efficiencies comparable to those of equivalent p-up LEDs grown by Metal Organic Chemical Vapor Deposition (MOCVD).

36 MATERIALS SCIENCE↗

NASA NTRS1979

Overview of the carbon fiber problem

Carbon fibers (CF) composite structures are being utilized more as alternatives to metals in both civilian and military applications. They are valued for their light weight and high strength as well as for their ease of designing structures with specific shapes and sizes. However, a problem may exist due to the high conductivity of CF. CF are manufactured from a precursor material which is subjected to great stress and heat treatment causing a change in the physical and electrical properties. The fibers are bound together by a matrix of epoxy. In the event of fire (aircraft accident) the epoxy would burn away releasing these fibers into the atmosphere. When these fibers come in contact with electronic equipment, they might cause damage to by settling on electrical junctions. An overview is given of the objectives for a study, and the approach and methodology developed for determination of risk profiles.

Source record↗

NASA NTRS2011

Lightweight Magnetic Cooler With a Reversible Circulator

A design of a highly efficient and lightweight space magnetic cooler has been developed that can continuously provide remote/distributed cooling at temperatures in the range of 2 K with a heat sink at about 15 K. The innovative design uses a cryogenic circulator that enables the cooler to operate at a high cycle frequency to achieve a large cooling capacity. The ability to provide remote/distributed cooling not only allows flexible integration with a payload and spacecraft, but also reduces the mass of the magnetic shields needed. The active magnetic regenerative refrigerator (AMRR) system is shown in the figure. This design mainly consists of two identical magnetic regenerators surrounded by their superconducting magnets and a reversible circulator. Each regenerator also has a heat exchanger at its warm end to reject the magnetization heat to the heat sink, and the two regenerators share a cold-end heat exchanger to absorb heat from a cooling target. The circulator controls the flow direction, which cycles in concert with the magnetic fields, to facilitate heat transfer. Helium enters the hot end of the demagnetized column, is cooled by the refrigerant, and passes into the cold-end heat exchanger to absorb heat. The helium then enters the cold end of the magnetized column, absorbing heat from the refrigerant, and enters the hot-end heat exchanger to reject the magnetization heat. The efficient heat transfer in the AMRR allows the system to operate at a relatively short cycle period to achieve a large cooling power. The key mechanical components in the magnetic cooler are the reversible circulator and the magnetic regenerators. The circulator uses non-contacting, self-acting gas bearings and clearance seals to achieve long life and vibration- free operation. There are no valves or mechanical wear in this circulator, so the reliability is predicted to be very high. The magnetic regenerator employs a structured bed configuration. The core consists of a stack of thin GGG disks alternating with thin polymer insulating films. The structured bed reduces flow resistance in the regenerator and therefore the pumping work by the cryogenic circulator. This magnetic cooler will enable cryogenic detectors for sensing infrared, x-ray, gamma-ray, and submillimeter radiation in future science satellites, as well as the detector systems in the Constellation-X (Con-X) and the Single Aperture Far-Infrared observatory (SAFIR). Scientific ap p - lica tions for this innovation include cooling for x-ray micro calorimeter spectrometers used for microanalysis, cryogenic particle detectors, and superconducting tunnel junction de tectors for biomolecule mass spectrometry. The cooler can be scaled to provide very large cooling capacities at very low temperatures, ideal for liquid helium and liquid hydrogen productions.

Chen, Weibo↗

NASA NTRS2011

High-Efficiency Ka-Band Waveguide Two-Way Asymmetric Power Combiner

NASA is planning a number of Space Exploration, Earth Observation and Space Science missions where Ka-band solid-state power amplifiers (SSPAs) could have a role. Monolithic microwave integrated circuit (MMIC) based SSPAs with output powers on the order of 10 W at Ka-band frequencies would be adequate to satisfy the data transmission rate requirements at the distances involved. MMICs are a type of integrated circuit fabricated on a GaAs wafer, which operates at micro wave frequencies and performs the function of signal amplification. The highest power Ka-band (31.8 to 32.3 GHz) SSPA to have flown in space had an output power of 2.6 W with an overall efficiency of 14.3 percent. This SSPA was built around discrete GaAs pHEMT (high electron mobility transistor) devices and flew aboard the Deep Space One spacecraft. State-of-the-art GaAs pHEMT-based MMIC power amplifiers (PAs) can deliver RF power at Ka-band frequencies anywhere from 3 W with a power added efficiency (PAE) of 32 percent to 6 W with a PAE of 26 percent. However, to achieve power levels higher than 6 W, the output of several MMIC PAs would need to be combined using a high-efficiency power combiner. Conventional binary waveguide power combiners, based on short-slot and magic-T circuits, require MMIC PAs with identical amplitude and phase characteristics for high combining efficiency. However, due to manufacturing process variations, the output powers of the MMIC PAs tend to be unequal, and hence the need to develop unequal power combiners. A two-way asymmetric magic-T based power combiner for MMIC power amplifiers, which can take in unequal inputs, has been successfully designed, fabricated, and characterized over NASA s Deep Space Network (DSN) frequency range of 31.8 to 32.3 GHz. The figure is a transparent view of the a sym - metric combiner that shows the 4-port configuration and the internal structure. The rod, post, and iris are positioned by design to achieve the desired asymmetric power ratio, phase equality, and port isolation. Although the combiner was designed for an input power ratio of 2:1, it can be custom-designed for any arbitrary power ratio and frequency range. The manufactured prototype combiner was precision machined from aluminum and is less than 2 in.3 (32.8 cm3). Previously investigated rectangular waveguide unequal power combiners were based on shunt/series coupling slots, E-plane septums, or H-plane T-junctions. All the prior art unequal power combiners operated at or below X-band (10 GHz) frequencies and were primarily used in the feed network of antenna arrays. The only reported asymmetric magic-T was developed as a 2:1 power divider for operation at a much lower frequency, around 500 MHz. The measured power ratio when tested as a power divider was very close to 2 and the phase balance was within 2.6, resulting in near ideal performance. When tested as a combiner using two MMIC SSPAs with a 2:1 power output ratio, an efficiency greater than 90 percent was demonstrated over the 500 MHz DSN frequency range. The return loss at the combiner output port (1) was greater than 18 dB and the input port (2 and 3) isolation was greater than 22 dB. The results show the asymmetric combiner to be a good candidate for high-efficiency power combining of two or more SSPAs needed to achieve the 6 to 10 W required by space communications systems of future NASA missions.

Wintucky, E. G.↗

DOE OSTI2021

Atomistic and mesoscale simulations to determine effective diffusion coefficient of fission products in SiC

The silicon carbide (SiC) layer in tristructural isotropic (TRISO) particles serves as the barrier to prevent escape of fission products produced in the fuel kernel. Knowing the diffusion coefficient of fission products through SiC is critical to determining whether fission gas can escape from the particle. It has been observed in experiments that Ag accumulated in grain boundaries and triple junctions in SiC. It is hypothesized that grain boundary diffusion is the primary pathway by which fission products penetrate the SiC layer. In this report, the effective diffusion coefficient of the fission product Ag through the grain boundary network is calculated using a combination of atomistic and phase-field methods. The grain boundary diffusion coefficient is calculated using molecular dynamics simulations. The bulk diffusion coefficient is determined using a combination of density functional theory and nudged elastic band methods. An effective diffusion coefficient is calculated, accounting for the grain structure using a phase-field method. The effective diffusion coefficient will be incorporated into Bison and fission product release calculations are compared to available experimental data.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

DOE OSTI2023

Scalable Manufacturing of Efficient Perovskite/Silicon Tandem Modules

Crystalline-Si (c-Si) technology produces excellent solar cells with conversion efficiencies of up to 26.7%—nearly their practical limit of 27%—and has been commercialized extensively to produce panels below $\$0.40$/W. Techno-economic analysis shows that module efficiency will continue to be a primary cost driver because of high balance-ofsystems costs, and there is no path to higher efficiencies with single-junction silicon cells. In this project, three research teams from University of North Carolina, Arizona State University and National Renewable National Laboratory worked together to develop perovskite-silicon tandem cells with a high throughput process which can handle 5000 wafers per hour, enabled by very low added CAPEX of ~$20k for a doctor-blade coater. This can potentially increase the module efficiency to 30% (with grid) with small increase of cost, which will drive down the cost of silicon modules to be at least 16% cheaper than present silicon PERC modules. We also explored the alternative narrow bandgap perovskites as silicon replacement for all perovskite tandem cells. This project has substantially advanced the progress of solution-process perovskitessilicon tandem solar cells and perovskite-perovskite tandem solar cells with many inventions and discoveries, evidenced by 18 publications and 6 invention disclosures. Several notable examples include 1) we developed the new idea of small pyramid in combination with solution grown perovskites and demonstrated record-efficiency of 28.5% for 1 cm2 on textured silicon bottom cells and 25.2% for 24 cm2 on chemically etched silicon bottom cells for perovskite-silicon tandem cells. 2) We developed perovskite ink that can coat perovskites onto texture silicon without voids;, and new device structure to enhance the yield of fabrication by reducing shunting 3) We identified the origin of open circuit voltage on mixed halide wide bandgap perovskites, and came with a solution for this problem, reducing the voltage loss to a record small value, which can potentially push the perovskite-silicon tandem cell efficiency to over 31%; 4) We have developed efficient alternative low bandgap semiconductors, i.e. gradient-doped Sn based perovskites by Ba ions, new oxide hole transport layers which increase the efficiency of perovskite/perovskite tandem cells reached record efficiency of 26.3%; 5) We developed bifacial perovskite/perovskite tandem cells by overcoming contacts issues and regaining light absorption, further boosting the equivalent efficiency to 29.3% under 1 sun illumination with 30% albedo light; 6) We developed the first all perovskite tandem module fabricated in air by discovery a combination of oxidization and reduction couples, yield an aperture efficiency of 21.6% for all perovskite mininodules, exceeding that of single junction perovskite minimodules. These discoveries not only accelerate the commercialization of perovskite-silicon tandem solar cells, but also provide guidance in designing other type of perovskite solar cell technologies.

14 SOLAR ENERGY↗

DOE OSTI2026

Identifying Decoherence Mechanisms in Superconducting Qubits through Advanced Materials Characterization

Although superconducting qubits have emerged as a leading technology platform for quantum computing through large improvements in device coherence times and gate fidelity in recent years, the presence of defects and impurities at the interfaces and surfaces in the constituent materials continue to limit performance and serve as a critical barrier in achieving scalable quantum systems. Understanding and eliminating these sources of quantum decoherence in superconducting qubit devices requires dedicated studies aimed at establishing robust structure-property relationships that will enable researchers to target and eliminate defects strategically. As part of the Superconducting Materials and Systems (SQMS) center, we have extensively employed state-of-the-art materials characterization techniques, including scanning/transmission electron microscopy, secondary ion mass spectrometry, atom probe tomography, x-ray diffraction, and x-ray photoelectron spectroscopy in conjunction with device measurements to elucidate such relationships. In this talk, I will discuss some of our recent findings, including linking atomic defects to microwave loss in surface oxides, linking impurities in the Josephson Junction to qubit parameters, and linking low temperature precipitates to device performance. By applying these insights, we have been able to strategically develop and implement mitigation strategies for reliable fabrication of high coherence superconducting qubits.

Murthy, A. [Fermilab] (ORCID:0000000176776866)↗

DOE OSTI2026

Identifying Decoherence Mechanisms in Superconducting Qubits through Advanced Materials Characterization

Murthy, A. [Fermilab] (ORCID:0000000176776866)↗

NASA NTRS1983

Lateral heterogeneity and azimuthal anistropy of the upper mantle: Love and Rayleigh waves 100-250 sec

The lateral heterogeneity and apparent anisotropy of the upper mantle are studied by measuring Rayleigh and Love wave phase velocities in the period range 100-250 sec. Spherical harmonic descriptions of the lateral heterogeneity are obtained for order and degree up to 1=m=10. Slow regions are evident at the East Pacific rise, northeast Africa, Tibet, Tasman sea, southwestern North America and triple junctions in the Northern Atlantic and Indian oceans. Fast regions occur in Australia, western Pacific and the eastern Atlantic. Details which are not evident in previous studies include two fast regions in the central Pacific and the subduction zone in the Scotia Arc region. Inversion for azimuthal dependence showed (1) little correlation between the fast phase velocity directions and the plate motion vector in plate interiors, but (2) correlation of the fast direction with the perpendicular direction to trenches and ridges. Phase velocity is high when waves propagate perpendicular to these structures. Severe tradeoffs exist between heterogeneity and azimuthal dependence because of the yet unsatisfactory path coverage.

Tanimoto, T.↗

NASA NTRS1985

Lateral heterogeneity and azimuthal anisotropy of the upper mantle - Love and Rayleigh waves 100-250 sec

Tanimoto, T.↗