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At least 703 records · Page 39

Visualization of bulk and edge photocurrent flow in anisotropic Weyl semimetals

Materials that rectify light into current in their bulk are desired for optoelectronic applications. In Weyl semimetals that break inversion symmetry, bulk photocurrents may arise due to nonlinear optical processes that are enhanced near the Weyl nodes. However, the photoresponse of these materials is commonly studied by scanning photocurrent microscopy, which convolves the effects of photocurrent generation and collection. Here we directly image the photocurrent flow inside the type-II Weyl semimetals WTe 2 and TaIrTe 4 using high-sensitivity quantum magnetometry with nitrogen-vacancy centre spins. We elucidate a mechanism for bulk photocurrent generation, which we call the anisotropic photothermoelectric effect, where unequal thermopowers along different crystal axes drive intricate circulations of photocurrent around the photoexcitation. Using overlapping scanning photocurrent microscopy and magnetic imaging at the interior and edges of the sample, we visualize how the anisotropic photothermoelectric effect stimulates the long-range photocurrent collected in our WTe 2 and TaIrTe 4 devices through the Shockley–Ramo mechanism. Furthermore, our results highlight a widely relevant source of current flow and will inspire photodetectors that utilize bulk materials with thermoelectric anisotropy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices

Nearly 70 years old dream of incorporating molecule as the device element is still challenged by competing defects in almost every experimentally tested molecular device approach. This paper focuses on the magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) method. An MTJMSD utilizes a tunnel barrier to ensure a robust and mass-producible physical gap between two ferromagnetic electrodes. MTJMSD approach may benefit from MTJ's industrial practices; however, the MTJMSD approach still needs to overcome additional challenges arising from the inclusion of magnetic molecules in conjunction with competing defects. Molecular device channels are covalently bonded between two ferromagnets across the insulating barrier. An insulating barrier may possess a variety of potential defects arising during the fabrication or operational phase. This paper describes an experimental and theoretical study of molecular coupling between ferromagnets in the presence of the competing coupling via an insulating tunnel barrier. We discuss the experimental observations of hillocks and pinhole-type defects producing inter-layer coupling that compete with molecular device elements. We performed theoretical simulations to encompass a wide range of competition between molecules and defects. Monte Carlo Simulation (MCS) was used for investigating the defect-induced inter-layer coupling on MTJMSD. Our research may help understand and design molecular spintronics devices utilizing various insulating spacers such as aluminum oxide (AlOx) and magnesium oxide (MgO) on a wide range of metal electrodes. This paper intends to provide practical insights for researchers intending to investigate the molecular device properties via the MTJMSD approach and do not have a background in magnetic tunnel junction fabrication.

36 MATERIALS SCIENCE↗

Mixed halide bulk perovskite triplet sensitizers: Interplay between band alignment, mid-gap traps, and phonons

Photon upconversion, particularly via triplet-triplet annihilation (TTA), could prove beneficial in expanding the efficiencies and overall impacts of optoelectronic devices across a multitude of technologies. The recent development of bulk metal halide perovskites as triplet sensitizers is one potential step toward the industrialization of upconversion-enabled devices. In this work, we investigate the impact of varying additions of bromide into a lead iodide perovskite thin film on the TTA upconversion process in the annihilator molecule rubrene. We find an interplay between the bromide content and the overall device efficiency. In particular, a higher bromide content results in higher internal upconversion efficiencies, enabled by more efficient charge extraction at the interface, likely due to a more favorable band alignment. However, the external upconversion efficiency decreases, as the absorption cross section in the near infrared is reduced. The highest upconversion performance is found in our study for a bromide content of 5%. This result can be traced back to a high absorption cross section in the near infrared and higher photoluminescence quantum yield in comparison to the iodide-only perovskite, as well as an increased driving force for charge transfer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Many-body theory of phonon-induced spin relaxation and decoherence

First-principles calculations enable accurate predictions of electronic interactions and dynamics. However, computing the electron spin dynamics remains challenging. The spin-orbit interaction causes various dynamical phenomena that couple with phonons, such as spin precession and spin-flip e-ph scattering, which are difficult to describe with current first-principles calculations. Here, in this work, we show a rigorous framework to study phonon-induced spin relaxation and decoherence, by computing the spin-spin correlation function and its vertex corrections due to e-ph interactions. We apply this approach to a model system and develop corresponding first-principles calculations of spin relaxation in GaAs. Our vertex-correction formalism is shown to capture the Elliott-Yafet, Dyakonov-Perel, and strong-precession mechanisms—three independent spin decoherence regimes with distinct physical origins—thereby unifying their theoretical treatment and calculation. Our method is general and enables quantitative studies of spin relaxation, decoherence, and transport in a wide range of materials and devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Amorphous Indium Oxide Channel FEFETs With Write Voltage of 0.9 V and Endurance >10 12 for Refresh-Free Embedded Memory

This work presents, for the first time, a back-end-of-the-line (BEOL)-compatible W-doped indium oxide (IWO) ferroelectric field-effect transistor (FEFET) with a record-low operating voltage below 0.9 V and a write speed of 20 ns while achieving a transient read current window (CW) ratio ( I LVT /I HVT ) greater than 10 4 . The device also exhibits exceptional reliability characteristics such as: 1) measured bipolar write endurance up to 10 12 cycles; 2) a fast read speed of 50 ns; 3) read endurance surpassing 10 12 cycles; and 4) retention exceeding 10 4 s at 85 ∘ C. Furthermore, a physics-based numerical model has been developed to investigate the nanoscale characteristics of BEOL FEFET devices, leveraging nucleation-limited switching in HfO 2 ferroelectrics and dc characterization to extract material and channel parameters for accurate device simulation. The simulation uncovers the stochastic switching behavior of BEOL amorphous oxide semiconductor (AOS) FEFETs and demonstrates an intrinsic switching time as low as 1 ps, highlighting the potential of BEOL AOS FEFETs for ultrafast memory applications. These results establish AOS FEFETs as a compelling candidate for high-density embedded memory applications for last-level cache (LLC) (L4) in advanced CMOS technology nodes.

1-V ferroelectric field-effect transistor (FEFET)↗

Skipper Charge-Coupled Device for Low-Energy-Threshold Particle Experiments above Ground

Here we present experimental results using a single-electron resolution skipper CCD running above ground level to demonstrate the potential of this technology for its use in reactor neutrino observations and other low-energy particle-interaction experiments. Operating conditions and event-selection criteria are provided to decouple most of the background rate at low energies. The majority of this background comes from interactions in the inactive silicon surrounding the active detector volume that ends up in the readout register of the sensor. Our final results are compared with other low-threshold technologies showing a good control of the background for low ionization energies down to five electron-hole pairs. This demonstrates that the skipper CCD proves to be among the best options to measure low-energy and weakly interacting particles at ground level.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Control of structure and spin texture in the van der Waals layered magnet CrSBr

Controlling magnetism at nanometer length scales is essential for realizing high-performance spintronic, magneto-electric and topological devices and creating on-demand spin Hamiltonians probing fundamental concepts in physics. Van der Waals (vdW)-bonded layered magnets offer exceptional opportunities for such spin texture engineering. Here, we demonstrate nanoscale structural control in the layered magnet CrSBr with the potential to create spin patterns without the environmental sensitivity that has hindered such manipulations in other vdW magnets. We drive a local phase transformation using an electron beam that moves atoms and exchanges bond directions, effectively creating regions that have vertical vdW layers embedded within the initial horizontally vdW bonded exfoliated flakes. We calculate that the newly formed two-dimensional structure is ferromagnetically ordered in-plane with an energy gap in the visible spectrum, and weak antiferromagnetism between the planes, suggesting possibilities for creating spin textures and quantum magnetic phases.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Quantum optimal control of superconducting qubits based on machine-learning characterization

Implementing fast and high-fidelity quantum operations using open-loop quantum optimal control relies on having an accurate model of the quantum dynamics. Any deviations between this model and the complete dynamics of the device, such as the presence of spurious modes or pulse distortions, can degrade the performance of optimal controls in practice. Here, we propose an experimentally simple approach to realize optimal quantum controls tailored to the device parameters and environment while specifically characterizing this quantum system. Concretely, we use physics-inspired machine learning to infer an accurate model of the dynamics from experimentally available data and then optimize our experimental controls on this trained model. We show the power and feasibility of this approach by optimizing arbitrary single-qubit operations in detailed numerical simulations of a superconducting transmon qubit. Furthermore, we demonstrate that this framework produces an accurate description of the device dynamics under arbitrary controls, together with the precise pulses achieving arbitrary single-qubit gates with a high fidelity of ∼99.99%.

Artificial neural networks↗

Enhanced spin pumping in heterostructures of coupled ferrimagnetic garnets

Spin pumping has significant implications for spintronics, providing a mechanism to manipulate and transport spins for information processing. Understanding and harnessing spin currents through spin pumping is critical for the development of efficient spintronic devices. The use of a magnetic insulator with low damping enhances the signal-to-noise ratio in crucial experiments such as spin-torque ferromagnetic resonance (FMR) and spin pumping. A magnetic insulator coupled with a heavy metal or quantum material offers a more straightforward model system, especially when investigating spin-charge interconversion processes to greater accuracy. This simplicity arises from the absence of unwanted effects caused by conduction electrons unlike in ferromagnetic metals. Here, we investigate the spin pumping in coupled ferrimagnetic (FiM) Y 3 Fe 5 O 12 (YIG)/Tm 3 Fe 5 O 12 (TmIG) bilayers combined with heavy-metal (Pt) using the inverse spin Hall effect. It is observed that magnon transmission occurs at both of the FiMs FMR positions. The enhancement of spin pumping voltage (V sp ) in the FiM garnet heterostructures is observed. The plausible reason might be the interfacial exchange coupling between FiMs. The modulation of V sp is achieved by tuning the bilayer structure. Further, the spin mixing conductance for these coupled systems is found to be ≈ 10 18 m –2 . Furthermore, our findings describe a coupled FiM system for the investigation of magnon coupling providing opportunities for magnonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A development of wide dynamic-range halo monitor for 8 GeV proton beams at FNAL

The FNAL accelerator complex has been upgrading in increasing beam intensity and beam quality. A new beam halo diagnostic device is required in the beam transport line between booster and Recycler. For this purpose, it was decided to introduce the wide dynamic range monitor technique that was developed in 2012 and has been in operation at the J-PARC beam transport line. The device is a two-dimensional beam profile monitor, and it has a dynamic range of approximately six digits of magnitude by using of Optical Transition Radiation and fluorescence screens. Eliminating harmful beam halos is the most important technique for high-intensity proton accelerators. Therefore, beam halo diagnosis is indispensable and becomes more and more important. New FNAL device has been manufactured in a collaboration between J-PARC and FNAL as a part of U.S.-Japan Science and Technology Cooperation Program in High Energy Physics. The equipment will be manufactured at J-PARC and will be shipped to FNAL in 2025.We designed the device to satisfy FNAL specifications: the beam energy, intensity, and size. Currently, most of the equipments are under construction. The large-aperture optical system has been completed and its optical characteristics are being evaluated at J-PARC. We have been also investigating measurement methods corresponding to FNAL bunch trains. This paper reports on the current status of these developments.

43 PARTICLE ACCELERATORS↗

Variable magnetic field electron spectrometer to measure hot electrons in the range of 50–460 keV

Resonance absorption (RA) occurs when a p-polarized electromagnetic wave, obliquely incident on an inhomogeneous plasma, tunnels past its turning point and resonantly excites an electron plasma wave (EPW) at the critical density. This phenomenon is important, for instance, in the direct drive approach to inertial fusion energy and is a particular example of a wider phenomenon in plasma physics known as mode conversion, which is crucial for heating magnetic fusion devices, such as tokamaks, via RF heating. Direct measurement of these RA-generated EPW accelerated hot electrons, with energy in the range of a few tens to a few hundreds of keV, is a challenging task due to the relatively low deflecting magnetic fields needed. The solution described here is a magnetic electron spectrometer (MES) with a continually changing magnetic field, lower at the entrance of the MES and gradually increasing toward the end, that enables the measurement of a wide spectral range of electrons with energies between 50 and 460 keV. Electron spectra taken in a LaserNetUS RA experiment were acquired from plasmas generated by irradiating polymer targets with the combination of an ~300 ps pulse followed by a series of ten high intensity 50–200 fs duration laser pulses from the ALEPH laser at Colorado State University. In conclusion, the high intensity beam is designed as spike trains of uneven duration and delay pulses in order to modify the RA phenomenon.

47 OTHER INSTRUMENTATION↗

Analyzing the effect of doping concentration in split-well resonant-phonon terahertz quantum cascade lasers

The effect of doping concentration on the temperature performance of the novel split-well resonant-phonon (SWRP) terahertz quantum-cascade laser (THz QCL) scheme supporting a clean 4-level system design was analyzed using non-equilibrium Green’s functions (NEGF) calculations. Experimental research showed that increasing the doping concentration in these designs led to better results compared to the split-well direct-phonon (SWDP) design, which has a larger overlap between its active laser states and the doping profile. However, further improvement in the temperature performance was expected, which led us to assume there was an increased gain and line broadening when increasing the doping concentration despite the reduced overlap between the doped region and the active laser states. Through simulations based on NEGF calculations we were able to study the contribution of the different scattering mechanisms on the performance of these devices. We concluded that the main mechanism affecting the lasers’ temperature performance is electron-electron (e-e) scattering, which largely contributes to gain and line broadening. Interestingly, this scattering mechanism is independent of the doping location, making efforts to reduce overlap between the doped region and the active laser states less effective. Optimization of the e-e scattering thus could be reached only by fine tuning of the doping density in the devices. By uncovering the subtle relationship between doping density and e-e scattering strength, our study not only provides a comprehensive understanding of the underlying physics but also offers a strategic pathway for overcoming current limitations. This work is significant not only for its implications on specific devices but also for its potential to drive advancements in the entire THz QCL field, demonstrating the crucial role of e-e scattering in limiting temperature performance and providing essential knowledge for pushing THz QCLs to new temperature heights.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Validation of theory-based models for the control of plasma currents in W7-X divertor plasmas

A theory-based model for the control of plasma currents for steady-state operation in W7-X is proposed and intended for model-based plasma control. The conceptual outline implies the strength of physics-based models: it offer approaches applicable to future conditions of fusion devices or next-step machines. The application at extrapolated settings is related to the validity range of the theory model. Therefore, the predictive power of theory-based control models could be larger than for data-driven approaches and limitations can be predicted from the validity range for the prediction of bootstrap currents in W7-X. The model predicts the L/R response when density or heating power is changed. The model is based on neoclassical bootstrap current calculations and validated for different discharge conditions. While the model was found to be broadly applicable for conducted electron-cyclotron-heated discharges in W7-X, limits were found for cases when the polarization of the electron cyclotron heating was changed from X2 to O2-heating. The validity assessment attempts to quantify the potential of the derived model for model-based control in the operational space (density, heating power) of W7-X.

neoclassical modelling↗

Deep Cyber-Physical Situational Awareness for Energy Systems: A Secure Foundation for Next-Generation Energy Management

This document provides the final report for the CYPRES project. The purpose is (1) to highlight and summarize its major accomplishments and (2) to provide guidance on how its outcomes have informed and can inform important additional research and technology transfer. The goal of CYPRES was the research, development, and demonstration of a security-oriented next generation cyber-physical EMS for electric power systems that detects malicious and abnormal events through the fusion of cyber and physical data. To achieve this, the CYPRES project team researched, developed, and built a prototype of the solution, referred to as the CYPRES EMS. The CYPRES EMS is a proof-of-concept cyber-physical platform that demonstrates the management of the energy system, communications, security, and cyber-physical grid modeling and analytics. As part of the capabilities of the CYPRES EMS, the team designed and developed a suite of power system applications for monitoring, risk analyses, detection, and control that are inherently cyberaware. At its core, the project aimed to research, develop, and demonstrate a security-oriented next-generation cyber-physical Energy Management System (EMS) capable of detecting malicious and abnormal events through the innovative fusion of cyber and physical data. This approach represents a fundamental shift from traditional EMS, reimagining how critical infrastructure can be protected through unified cyber-aware and physics-aware secure data flow pipelines. The project’s cornerstone deliverable, the CYPRES EMS, serves as a proof-of-concept cyber-physical platform that revolutionizes the management of energy systems, communications, security, and cyber-physical grid modeling and analytics. This prototype implements a comprehensive suite of power system applications for monitoring, risk analyses, detection, and control, all designed with inherent cyber awareness. The system’s architecture extends from end-devices in the field through to control center applications, establishing a secure and resilient control framework that addresses the challenges posed by diverse devices of unknown trustworthiness connecting to modern power systems. Through this innovative approach to deep cyber-physical situational awareness, the CYPRES project not only advances the state-of-the-art in energy infrastructure protection but also establishes a new paradigm for how EMS can be designed, deployed, and operated in an increasingly complex threat landscape. The findings and developments from this project provide crucial insights for stakeholders across the energy sector, offering a blueprint for enhancing the reliability and resilience of our nation’s critical energy infrastructure in the face of evolving cyber threats.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Characterization and thermometry of dissipatively stabilized steady states

In this work we study the properties of dissipatively stabilized steady states of noisy quantum algorithms, exploring the extent to which they can be well approximated as thermal distributions, and proposing methods to extract the effective temperature T. We study an algorithm called the relaxational quantum eigensolver (RQE), which is one of a family of algorithms that attempt to find ground states and balance error in noisy quantum devices. In RQE, we weakly couple a second register of auxiliary ‘shadow’ qubits to the primary system in Trotterized evolution, thus engineering an approximate zero-temperature bath by periodically resetting the auxiliary qubits during the algorithm’s runtime. Balancing the infinite temperature bath of random gate error, RQE returns states with an average energy equal to a constant fraction of the ground state. We probe the steady states of this algorithm for a range of base error rates, using several methods for estimating both T and deviations from thermal behavior. In particular, we both confirm that the steady states of these systems are often well-approximated by thermal distributions, and show that the same resources used for cooling can be adopted for thermometry, yielding a fairly reliable measure of the temperature. These methods could be readily implemented in near-term quantum hardware, and for stabilizing and probing Hamiltonians where simulating approximate thermal states is hard for classical computers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Characterizing the Stability of NISQ Devices

In this study, we focus on the question of stability of NISQ devices. The parameters that define the device stability profile are motivated by the work of DiVincenzo in [9] where the requirements for physical implementation of quantum computing are discussed. We develop the metrics and theoretical framework to quantify the DiVincenzo requirements and study the stability of those key metrics. The basis of our assessment is histogram similarity (in time and space). For identical experiments, devices which produce reproducible histograms in time, and similar histograms in space, are considered more reliable. To investigate such reliability concerns robustly, we propose a moment-based distance (MBD) metric. We illustrate our methodology using data collected from IBM's Yorktown device. Two types of assessments are discussed: spatial stability and temporal stability.

Dasgupta, Samudra↗

Finite element procedure for thermomechanical and structural integrity analysis of beam intercepting devices subjected to free electron laser

High-energy particles, including photons (x-ray, γ-ray, bremsstrahlung), electrons, and protons, possess the capability to penetrate materials and deposit energy within them. The degree of absorption depends on both the energy and type of particles, as well as the properties of the materials with which they interact. This energy deposition can manifest either at the material's surface or throughout its volume, potentially resulting in various failure modes. The primary aim of this paper is to establish a structured analysis methodology for evaluating the structural integrity of beam-intercepting devices when subjected to high-energy particles. Here, the paper also reviews some of the underlying physics, pertinent to the scope of the thermomechanical analysis, potential failure modes, and introduces verification and validation methodologies. Engineers and researchers can utilize the guidelines presented in this paper to effectively plan the development of beam intercepting devices, thereby ensuring their reliability and performance in the presence of high-energy particle exposure.

Finite element analysis↗

Perspectives of active Si photonics devices for data communication and optical sensing

Si photonics has made rapid progress in research and commercialization in the past two decades. While it started with electronic–photonic integration on Si to overcome the interconnect bottleneck in data communications, Si photonics has now greatly expanded into optical sensing, light detection and ranging (LiDAR), optical computing, and microwave/RF photonics applications. From an applied physics point of view, this perspective discusses novel materials and integration schemes of active Si photonics devices for a broad range of applications in data communications, spectrally extended complementary metal–oxide–semiconductor (CMOS) image sensing, as well as 3D imaging for LiDAR systems. We also present a brief outlook of future synergy between Si photonic integrated circuits and Si CMOS image sensors toward ultrahigh capacity optical I/O, ultrafast imaging systems, and ultrahigh sensitivity lab-on-chip molecular biosensing.

electronic band structure↗