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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Network analysis of memristive device circuits: dynamics, stability and correlations

Abstract Networks with memristive devices are a potential basis for the next generation of computing devices. They are also an important model system for basic science, from modeling nanoscale conductivity to providing insight into the information-processing of neurons. The resistance in a memristive device depends on the history of the applied bias and thus displays a type of memory. The interplay of this memory with the dynamic properties of the network can give rise to new behavior, offering many fascinating theoretical challenges. But methods to analyze general memristive circuits are not well described in the literature. In this paper we develop a general circuit analysis for networks that combine memristive devices alongside resistors, capacitors and inductors and under various types of control. We derive equations of motion for the memory parameters of these circuits and describe the conditions for which a network should display properties characteristic of a resonator system. For the case of a purely memresistive network, we derive Lyapunov functions, which can be used to study the stability of the network dynamics. Surprisingly, analysis of the Lyapunov functions show that these circuits do not always have a stable equilibrium in the case of nonlinear resistance and window functions. The Lyapunov function allows us to study circuit invariances, wherein different circuits give rise to similar equations of motion, which manifest through a gauge freedom and node permutations. Finally, we identify the relation between the graph Laplacian and the operators governing the dynamics of memristor networks operators, and we use these tools to study the correlations between distant memristive devices through the effective resistance.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Qumode transfer between continuous- and discrete-variable devices

Transferring quantum information between different types of quantum hardware is crucial for integrated quantum technology. In particular, converting information between continuous variable (CV) and discrete variable (DV) devices enables many applications in quantum networking, quantum sensing, quantum machine learning, and quantum computing. This paper addresses the transfer of CV-encoded information between CV and DV devices. We present a resource-efficient method for encoding CV states and implementing CV gates on DV devices, as well as two measurement-based protocols for transferring CV states between CV and DV devices. The success probability of the transfer protocols depends on the measurement outcome and can be increased to near-deterministic values by adding ancillary qubits to the DV devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Robust Skyrmion Shift Device Through Engineering the Local Exchange-Bias Field

Magnetic skyrmions are topologically protected spin structures, offering great promise as information carriers for future spintronic devices. However, a series of challenges, such as unreliable skyrmion motion, pinning effects, and a weak read-out signal, prevent the development of skyrmionic applications. The recently demonstrated capability to engineer the local exchange-bias field (LEBF) in an exchange biased composite, provides solutions to these challenges. By exploiting LEBF, we design and analyze a robust skyrmion shift device. LEBF-induced magnetic domain walls form the boundary of the device channel, and LEBF potential wells are implemented in the channel for positioning skyrmions. Based on simulations with comprehensive models, we demonstrate the proposed device has the advantages of (i) localizing the skyrmions in the absence of current, (ii) suppressing skyrmion annihilation during transport, (iii) promoting steady skyrmion motion, (iv) enhancing the skyrmion velocity, and (v) magnifying the read-out signal. Our results form the basis for the design of robust skyrmion devices through LEBF engineering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Quantification of Dopant Profiles in SiGe HBT Devices

We report on the use of atom probe tomography (APT), scanning transmission electron microscopy (STEM), and secondary ion mass spectroscopy (SIMS) to characterize doping profiles in the base region of SiGe HBT devices. We compare SIMS profiles obtained from large regions (400 um 2 ) of the device wafer to profiles obtained from individual devices of different emitter window widths (0.25 and 0.18 um 2 ) using APT. From this comparison we show how APT can provide a deeper insight into evaluating the fabrication process and its effects on electrical models of device performance and enabling the building of higher performance systems. We also demonstrate that APT can be used to characterize defects within the intrinsic regions of a device.

Jones, Eric↗
DOE OSTI2022

(110)-Oriented GaAs Devices and Spalling as a Platform for Low-Cost III-V Photovoltaics

Here, we demonstrate the growth of GaAs solar cells by hydride vapor phase epitaxy (HVPE) on epi-ready and previously spalled (110) GaAs wafers as an advance towards a potentially low-cost (110)-based device platform. Controlled spalling offers a fracture-based path to substrate cost amortization, enabling device exfoliation and substrate reuse, but the faceted surface generated during the spalling of (100)-oriented GaAs presents hurdles to direct regrowth of subsequent devices. Spalling of (110) substrates instead eliminates faceting by aligning the substrate surface with the predominant crystal cleavage plane. III-V epitaxy of solar cells is significantly less developed on (110)-oriented substrates, however. Here, we develop (110)-based GaAs solar cells grown by HVPE on epi-ready substrates, demonstrating equal performance to devices grown on the more standard (100) orientation. We also characterize the surface of spalled, (110)-oriented substrates, revealing flat terraces separated by steps with sub-micron-scale height on average. Finally, we present an initial device grown on a previously spalled surface without additional surface re-preparation with nearly 16% efficiency under a simulated AM1.5G spectrum. Together, these results provide preliminary evidence of a potentially low-cost path to enable terrestrial III-V photovoltaics via the (110) substrate orientation.

14 SOLAR ENERGY↗
DOE OSTI2020

An Interior-Point Solver for Optimal Power Flow Problem Considering Distributed FACTS Devices

In this paper, we propose an AC optimal power flow (ACOPF) model considering distributed flexible AC transmission system (D-FACTS) devices, in which the reactance of D-FACTS equipped lines are introduced as decision variables. This is motivated by increasing interests in using D-FACTS devices to address system operational and cyber-security concerns. First, D-FACTS devices can be incorporated in real-time operations for economic benefits such as managing power congestions and reducing system losses. Second, D-FACTS devices can be utilized by moving target defense (MTD), an emerging concept against cyber-attacks, to prevent attackers from knowing true system configurations. Therefore, system operators can use the proposed ACOPF model to achieve economic benefits and provide the setpoints of D-FACTS devices for MTD at the same time. In addition, we rigorously derive the gradient and Hessian matrices of the objective function and constraints, which are further used to build an interior-point solver of the proposed ACOPF. Numerical results on the IEEE 118-bus transmission system show the validity of the proposed ACOPF model as well as the efficacy of the interior-point solver in minimizing system losses and generation costs.

Liu, Bo↗
DOE OSTI2014

Emerging Techniques for Field Device Security

Critical infrastructure, such as electrical power plants and oil refineries, rely on embedded devices to control essential processes. State of the art security is unable to detect attacks on these devices at the hardware or firmware level. We provide an overview of the hardware used in industrial control system field devices, look at how these devices have been attacked, and discuss techniques and new technologies that may be used to secure them. We follow three themes: (1) Inspectability, the capability for an external arbiter to monitor the internal state of a device. (2) Trustworthiness, the degree to which a system will continue to function correctly despite disruption, error, or attack. (3) Diversity, the use of adaptive systems and complexity to make attacks more difficult by reducing the feasible attack surface.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2015

Device Fabrication using Crystalline CdTe and CdTe Ternary Alloys Grown by MBE

We fabricated epitaxial CdTe:In/CdTe:As homojunction and CdZnTe/CdTe and CdMgTe/CdTe heterojunction devices grown on bulk CdTe substrates in order to study the fundamental device physics of CdTe solar cells. Selection of emitter-layer alloys was based on passivation studies using double heterostructures as well as band alignment. Initial results show significant device integration challenges, including low dopant activation, high resistivity substrates and the development of low-resistance contacts. To date, the highest open-circuit voltage is 715 mV in a CdZnTe/CdTe heterojunction following anneal, while the highest fill factor of 52% was attained in an annealed CdTe homojunction. In general, all currentvoltage measurements show high series resistance, capacitancevoltages measurements show variable doping, and quantum efficiency measurements show low collection. Ongoing work includes overcoming the high resistance in these devices and addressing other possible device limitations such as non-optimum junction depth, interface recombination, and reduced bulk lifetime due to structural defects.

14 SOLAR ENERGY↗
DOE OSTI2020

Doping of CdTe Using CuCl2 Solution for Highly Efficient Photovoltaic Devices

Here, we report doping of cadmium telluride (CdTe) thin film solar cells using copper (II) chloride (CuCl 2 ) solution in deionized water. The CdTe thin films were immersed in 0.1 mmol CuCl 2 solution in water and annealed in the temperature range of 180-240 degrees C for various time durations. The devices were completed using thermally evaporated gold (Au) and measured under simulated AM1.5G spectrum. The average device efficiency of CuCl 2 treated CdTe devices increased to 13.7 % (best cell reaching 14.0%) with significant improvement on open-circuit voltage (VOC ) as compared with 12.4% (best cell 12.7%) for thermally evaporated Cu doped CdTe devices. For CuCl 2 treated CdTe devices, we found higher photoluminescence (PL) intensity and longer carrier life time at room temperature indicating solution based doping offers better control of Cu doping density as compared with evaporated Cu.

14 SOLAR ENERGY↗
DOE OSTI2023

Toward Consistent High-Fidelity Quantum Learning on Unstable Devices via Efficient In-Situ Calibration

In the near-term noisy intermediate-scale quantum (NISQ) era, high noise will significantly reduce the fidelity of quantum computing. What's worse, recent works reveal that the noise on quantum devices is not stable, that is, the noise is dynamically changing over time. This leads to an imminent challenging problem: At run-time, is there a way to efficiently achieve a consistent high-fidelity quantum system on unstable devices? To study this problem, we take quantum learning (a.k.a., variational quantum algorithm) as a vehicle, which has a wide range of applications, such as combinatorial optimization and machine learning. A straightforward approach is to optimize a variational quantum circuit (VQC) with a parameter-shift approach on the target quantum device before using it; however, the optimization has an extremely high time cost, which is not practical at run-time. To address the pressing issue, in this paper, we proposed a novel quantum pulse-based noise adaptation framework, namely QuPAD. In the proposed framework, first, we identify that the CNOT gate is the fidelity bottleneck of the conventional VQC, and we employ a more robust parameterized multi-qubit gate (i.e., Rzx gate) to replace CNOT gate. Second, by benchmarking Rzx gate with different parameters, we build a fitting function for each coupling qubit pair, such that the deviation between the theoretic output of Rzx gate and its on-device output under a given pulse amplitude and duration can be efficiently predicted. On top of this, an evolutionary algorithm is devised to identify the pulse amplitude and duration of each Rzx gate (i.e., calibration) and find the quantum circuits with high fidelity. Experiments show that the runtime on quantum devices of QuPAD with 8–10 qubits is less than 15 minutes, which is up to 270 x faster than the parameter-shift approach. In addition, compared to the vanilla VQC as a baseline, QuPAD can achieve 59.33% accuracy gain on a classification task, and average 66.34% closer to ground state energy for molecular simulation.

Hu, Zhirui↗
DOE OSTI2022

Irradiation-induced Degradation of Surface Acoustic Wave Devices Fabricated on Bulk AlN

Here, recent work to evaluate the prospects for surface acoustic wave (SAW) devices fabricated on bulk aluminum nitride (AlN) for elevated temperature and radiation environments is reported and discussed. The design and fabrication of an array of SAW devices using commercial wafers is described, including the non-standard fabrication approach taken to overcome the stress-induced warpage of the 50 mm diameter AlN substrates. Radio frequency performance characterization of the SAW devices, with resonance frequencies ranging from 0.5 GHz to 1.5 GHz, is described. The linear temperature coefficient of frequency (TCF) near room temperature was measured and is compared to theoretical results from other investigators. Further, the effects of 8 MeV Al ion irradiation at 300°C and 500°C to damage levels of 0.01, 0.1 and 1 displacements per atom (dpa), as a proxy for neutron irradiation, was investigated. The ion irradiation damage was observed to decrease the SAW resonant frequency, and this effect is characterized and discussed. Significant degradation in the conductivity of the Ti/Al electrodes of the SAW devices was also observed and characterized. These experimental results provide a basis for further investigation of the prospects for development of SAW sensor devices in bulk AlN material for application in elevated temperature and radiation environments.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Electrically Driven Insulator–Metal Transition-Based Devices—Part II: Transient Characteristics

Part II of this paper discusses the transient characteristics of the electrically driven insulator–metal transition (E-IMT) material-based device. To model the full transient characteristics, we modify the electrothermal model developed in Part I to capture extrinsic capacitance and 2-D heat transport effects. In order to test the model against the experiment, we fabricated and tested scaled E-IMT devices with a necked-down design to minimize nonhomogeneity. We show excellent agreement of the predictions of the model with the experimental data, and we find that the IMT device goes through three stages before a steady state is established.These three stages are identified as the times required for the incubation of the IMT transition, positive feedback, and width expansion of the IMT zone within the device. The impact of capacitance and 2-D heat transport is discussed. Furthermore, we show an inverse relation arises between the incubation time and the applied voltage. This paper satisfactorily explains the turn-on transient in a nanoscale E-IMT device within the framework of our electrothermal (Joule heating) model.

Insulator–to-metal transition (IMT)↗
DOE OSTI2019

Removal of Stress Hillocks from Platinum-Alumina Electrodes Used in High-temperature SAW Devices

Microwave acoustic devices operating at elevated temperatures, such as surface acoustic wave (SAW) duplexers or high-temperature sensors, require stable thin film electrodes capable of operating in such conditions. Stresses at the interface between the substrate and the thin film electrodes originated during electrode deposition and/or during device operation can foster film agglomeration, formation of whiskers, hillocks, electromigration, separation of the metal and oxide in composite electrodes, which degrade the electrode conductivity and the device’s long-term stability and performance. Thin film composite Pt-Al 2 O 3 has been successfully used as electrodes in langasite (LGS) SAW devices and sensors up to 900 °C, but the formation of hillocks due to stress is seen as a limitation to the device long-term stability. In this work, a modified graded film deposition technique has been implemented targeting the release of film stress between the substrate and the thin film composite electrode due to fabrication and exposure to high-temperature. The technique successfully mitigated the formation of hillocks and material agglomeration as revealed by the SEM images obtained, and can be easily extended to other metallic or composite thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2015

A novel tensile device for in situ scanning electron microscope mechanical testing

To facilitate the study of deformation mechanisms and mechanical properties of bulk materials with feature size of centimeter level, a novel tensile device compatible with scanning electron microscope (SEM) was designed and built. Integrating the servo motor and three-stage reducer, the device could realize quasistatic loading mode with a loading speed of 10 nm/s. The device also presents broad compatibility with various types of SEMs due to its miniaturized dimensions and larger volume–output load ratio compared with existing and commercial tensile instruments. A small lead precise ball screw with left- and right-hand thread was adopted to keep the center of the specimen remain stationary without moving during the tensile testing. A novel gripping method was carefully taken into account to guarantee the alignment issues. The closed-loop control mode of the tensile process was developed. The displacement resolution of 40 nm was tested to verify the driving performance of the device. Furthermore, correction method on testing displacement was investigated based on the calibration experiments of the load sensor and displacement sensor, and the comparison tests based on stress–strain curve were carried out between the self-made device and the commercial tensile instrument (Instron 3345) to verify the feasibility and universality of the correction method.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Impact of surface morphology of Si substrate on performance of Si/ZnO heterojunction devices grown by atomic layer deposition technique

In this paper, the authors have investigated the structural, optical, and electrical characteristics of silicon nanowire (SiNW)/zinc oxide (ZnO) core–shell nanostructure heterojunctions and compared their characteristics with Si/ZnO planar heterojunctions to investigate the effect of surface morphology of Si substrate in the characteristics of Si/ZnO heterojunction devices. In this work, ZnO thin film was conformally deposited on both p-type 〈100〉 planar Si substrate and substrate with vertically aligned SiNW arrays by atomic layer deposition (ALD) method. The x-ray diffraction spectra show that the crystalline structures of Si/ZnO heterojunctions are having (101) preferred orientation, whereas vertically oriented SiNW/ZnO core–shell heterojunctions are having (002)-oriented wurtzite crystalline structures. The photoluminescence (PL) spectra of Si/ZnO heterojunctions show a very sharp single peak at 377 nm, corresponding to the bandgap of ZnO material with no other defect peaks in visible region; hence, these devices can have applications only in UV region. On the other hand, SiNW/ZnO heterojunctions are having band-edge peak at 378 nm along with a broad emission band, spreading almost throughout the entire visible region with a peak around 550 nm. Therefore, ALD-grown SiNW/ZnO heterojunctions can emit green and red light simultaneously. Reflectivity measurement of the heterojunctions further confirms the enhancement of visible region peak in the PL spectra of SiNW/ZnO heterojunctions, as the surface of the SiNW/ZnO heterojunctions exhibits extremely low reflectance (<3%) in the visible wavelength region compared to Si/ZnO heterojunctions (>20%). The current–voltage characteristics of both Si/ZnO and SiNW/ZnO heterojunctions are measured with large area ohmic contacts on top and bottom of the structure to compare the electrical characteristics of the devices. Due to large surface to-volume ratio of SiNW/ZnO core–shell heterojunction devices, the output current rating is about 130 times larger compared to their planar version at 2 V forward bias voltage. This higher output current rating can be exploited for fabricating high-performance nanoelectronic and optoelectronic devices in near future.

42 ENGINEERING↗
DOE OSTI2019

Review Article: Crystal alignment for high performance organic electronics devices

Organic electronics devices based on high-performance small-molecule organic semiconductors have gained substantial attention because of their unique advantages such as excellent charge transport, solution processability, and environmental stability. However, the intrinsic crystallization of small-molecule organic semiconductors is anisotropic, resulting in significant device performance variations of organic electronics devices. In this article, the authors review the various approaches and techniques developed to control and align the crystallization of some benchmark solution-processable, high-performance, small-molecule organic semiconductors, such as 6,13-bis(triisopropylsilylethynyl) pentacene, N,N'-1H,1H-perfluorobutyl dicyanoperylenecarboxydiimide, and 5,11-bis(triethylgermylethynyl)anthradithiophene. These alignment approaches are studied in the context of capillary force-based techniques, patterning-based techniques, solution-shearing-based techniques, and other miscellaneous techniques, including zone-casting, vertical flowing, air flow navigation, temperature gradient alignment, etc. The organic semiconductors and crystal alignment techniques reviewed in this article shed light on important relationship among crystallization, charge transport, and device performance and can be applied to various high-performance organic electronics devices, such as organic thin film transistors and solar cells.

42 ENGINEERING↗
DOE OSTI2013

Quantum-engineered interband cascade photovoltaic devices

Quantum-engineered multiple stage photovoltaic (PV) devices are explored based on InAs/GaSb/AlSb interband cascade (IC) structures. These ICPV devices employ multiple discrete absorbers that are connected in series by widebandgap unipolar barriers using type-II heterostructure interfaces for facilitating carrier transport between cascade stages similar to IC lasers. The discrete architecture is beneficial for improving the collection efficiency and for spectral splitting by utilizing absorbers with different bandgaps. As such, the photo-voltages from each individual cascade stage in an ICPV device add together, creating a high overall open-circuit voltage, similar to conventional multi-junction tandem solar cells. Furthermore, photo-generated carriers can be collected with nearly 100% efficiency in each stage. This is because the carriers travel over only a single cascade stage, designed to be shorter than a typical diffusion length. The approach is of significant importance for operation at high temperatures where the diffusion length is reduced. Here, we will present our recent progress in the study of ICPV devices, which includes the demonstration of ICPV devices at room temperature and above with narrow bandgaps (e.g. 0.23 eV) and high open-circuit voltages. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

14 SOLAR ENERGY↗
DOE OSTI2018

Multi-scale theory-assisted nano-engineering of plasmonic-organic hybrid electro-optic device performance

Multi-scale (correlated quantum and statistical mechanics) modeling methods have been advanced and employed to guide the improvement of organic electro-optic (OEO) materials, including by analyzing electric field poling induced electro-optic activity in nanoscopic plasmonic-organic hybrid (POH) waveguide devices. The analysis of in-device electro-optic activity emphasizes the importance of considering both the details of intermolecular interactions within organic electro-optic materials and interactions at interfaces between OEO materials and device architectures. Dramatic improvement in electro-optic device performance--including voltage-length performance, bandwidth, energy efficiency, and lower optical losses have been realized. These improvements are critical to applications in telecommunications, computing, sensor technology, and metrology. Multi-scale modeling methods illustrate the complexity of improving the electro-optic activity of organic materials, including the necessity of considering the trade-off between improving poling-induced acentric order through chromophore modification and the reduction of chromophore number density associated with such modification. Computational simulations also emphasize the importance of developing chromophore modifications that serve multiple purposes including matrix hardening for enhanced thermal and photochemical stability, control of matrix dimensionality, influence on material viscoelasticity, improvement of chromophore molecular hyperpolarizability, control of material dielectric permittivity and index of refraction properties, and control of material conductance. Consideration of new device architectures is critical to the implementation of chipscale integration of electronics and photonics and achieving the high bandwidths for applications such as next generation (e.g., 5G) telecommunications.

Engineering↗