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At least 703 records · Page 39

Leaching Kinetics of Rare Earth Elements from Fire Clay Seam Coal

Recovery of rare earth elements (REEs) from coal samples collected from the Fire Clay coal seam using diluted mineral acid solutions was investigated. The initial processing step was coal recovery using conventional froth flotation which concentrated the REEs in tailing material resulting in an upgrade to values around 700 ppm on a dry whole mass basis. Leaching experiments were performed on the flotation tailings material using a 1.2 M sulfuric acid solution adjusted to a temperature of 75 °C to study the extractability of REEs from coal material. The effect of particle size, leaching time, leaching temperature, and solid concentration on REE leaching recovery were evaluated. The kinetic data obtained from leaching over a range of temperatures suggested that the leaching process follows the shrinking core model with possibly a mixed control mechanism that may be a result of several heterogenous materials leaching simultaneously. Leaching recovery increased rapidly at the beginning of the reaction then slowed as the system reached equilibrium. The apparent activation energy determined from test data obtained over a range of temperatures using 1 M sulfuric acid was 36 kJ/mol for the first 20 min of reaction time and 27 kJ/mol for the leaching period between 20 and 120 min. The leaching of light REEs during the initial stage was determined to be driven by a chemical reaction, followed by the formation of a product layer, which required lower activation energy in the later stage of leaching. In regards to the heavy REEs, the major mechanism for leaching is desorption and the product layer formation does not affect the heavy REEs significantly.

58 GEOSCIENCES↗

Boosting the performances of protonic solid oxide fuel cells for co-production of propylene and electricity from propane by integrating thermo- and electro- catalysis

Protonic solid oxide fuel cells (p-SOFC) integrated with clean thermal energy sources are promising platforms for decarbonized chemical production in addition to power generation, such as on-purpose propylene production from propane dehydrogenation (PDH). The catalytic performance of the conventional nickel-cermet-based anode materials in p-SOFC for propane conversion is restrained by their low active surface area and proneness to coking. In this work, by integration of a highly efficient industry-relevant thermal catalyst PtGa/ZSM-5 for PDH reaction, we demonstrate that both the electrochemical and catalytic performance of the propane-fueled p-SOFC can be effectively enhanced. The PtGa catalyst integrated p-SOFC exhibits a peak power density of 93 mW cm -2 at 600°C, which is greater by about 100% and 50% than that without catalyst or with a perovskite-based (Pr 0.3 Sr 0.7 ) 0.9 Ni 0.1 Ti 0.9 O 3 (PSNT) catalyst layer, respectively. The PDH activity and olefin selectivity of the PtGa catalyst is also significantly higher than that of the PSNT catalyst. In addition, much improved coke tolerance and propylene selectivity (over 90%) compared to the catalyst-free Ni-cermet anode materials were achieved by integrating the industrial catalyst layer. The propane conversion can be further improved by an applied current density, whereas the olefin selectivity is almost unaltered. The excellent performance of the PtGa catalyst integrated p-SOFC is attributed to the high surface area, intrinsically high catalytic activity, selectivity, and anti-coking properties of the catalytic layer for propane conversion. In conclusion, this work provides a general approach and a case study for boosting the performances of p-SOFCs in chemical production by integrating thermo- and electro- catalysis.

30 DIRECT ENERGY CONVERSION↗

Variable pin fin construction to facilitate compliant cold plates

A device can comprise a plurality of layers stacked and bonded on one another, wherein at least one layer of the plurality of layers comprises: a first active region comprising first pin portions positioned in a first planar arrangement; and a second active region comprising second pin portions positioned in a second planar arrangement, wherein the second planar arrangement is different from the first planar arrangement. The device can also comprise a conformable layer adjacent to at least one of the plurality of layers.

Schultz, Mark Delorman↗

Aitken Mode Aerosols Buffer Decoupled Mid‐Latitude Boundary Layer Clouds Against Precipitation Depletion

Aerosol-cloud-precipitation interactions are a leading source of uncertainty in estimating climate sensitivity. Remote marine boundary layers where accumulation mode (~100–400 nm diameter) aerosol concentrations are relatively low are very susceptible to aerosol changes. These regions also experience heightened Aitken mode aerosol (~10–100 nm) concentrations associated with ocean biology. Aitken aerosols may significantly influence cloud properties and evolution by replenishing cloud condensation nuclei and droplet number lost through precipitation (i.e., Aitken buffering). We use a large-eddy simulation with an Aitken-mode enabled microphysics scheme to examine the role of Aitken buffering in a mid-latitude decoupled boundary layer cloud regime observed on 15 July 2017 during the Aerosol and Cloud Experiments in the Eastern North Atlantic flight campaign: cumulus rising into stratocumulus under elevated Aitken concentrations (~100–200 mg -1 ). In situ measurements are used to constrain and evaluate this case study. Our simulation accurately captures observed aerosol-cloud-precipitation interactions and reveals time-evolving processes driving regime development and evolution. Aitken activation into the accumulation mode in the cumulus layer provides a reservoir for turbulence and convection to carry accumulation aerosols into the drizzling stratocumulus layer above. Further Aitken activation occurs aloft in the stratocumulus layer. Together, these activation events buffer this cloud regime against precipitation removal, reducing cloud break-up and associated increases in heterogeneity. We examine cloud evolution sensitivity to initial aerosol conditions. With halved accumulation number, Aitken aerosols restore accumulation concentrations, maintain droplet number similar to original values, and prevent cloud break-up. Without Aitken aerosols, precipitation-driven cloud break-up occurs rapidly. In this regime, Aitken buffering sustains brighter, more homogeneous clouds for longer.

54 ENVIRONMENTAL SCIENCES↗

Highly Responsive Near-Infrared Photodetector Based on Contactless PdSe 2 Integration with a Few-Layered MoSe 2 Field-Effect Transistor

Two-dimensional (2D) semiconductors with narrow bandgaps are promising candidates for near- and far-infrared (IR) photodetection, particularly in the telecommunication spectral window. However, current low-bandgap IR photodetectors face significant challenges due to their high dark current, increased carrier recombination, and thermally generated noise. Here, in this work, a hybrid phototransistor is demonstrated by integrating direct, contact-free palladium diselenide (PdSe 2 ) as a highly responsive IR detection layer with a non-IR-absorbing molybdenum diselenide (MoSe 2 ) field-effect transistor (FET), using a near-IR source at a wavelength of λ = 1650 nm. Exfoliated PdSe 2 flakes integrated into a back-gated FET architecture exhibit ambipolar transport behavior, with extracted hole and electron mobilities of 24.8 cm 2 V –1 s –1 and 58.4 cm 2 V –1 s –1 , respectively. The devices show a clear photocurrent generation under the illumination of a λ = 1650 nm laser source, achieving a notable responsivity of ∼300 mA W -1 at an applied gate voltage of 15 V, which highlights the suitability of PdSe 2 as a narrow-bandgap material for photodetection. Photoresponsivity saturates and does not have any effect above an applied gate voltage of 15 V. To further tune the photoresponsivity performance continuously with the applied gate voltage, we construct a van der Waals heterostructure phototransistor, where few layers of PdSe 2 are directly transferred onto the 2D channel region of a MoSe 2 FET, while avoiding any contact with the metal electrodes. In this heterostructure, PdSe 2 works as the primary active IR-absorbing layer, while MoSe 2 provides high-performance FET characteristics. This spatial separation of absorption and transport facilitates efficient interlayer charge transfer and charge separation, resulting in high responsivities of up to 972 mA W –1 at near-IR wavelengths and a low power density of 1.5 mW/mm 2 . The responsivity of our photodetector is comparable to that of some state-of-the-art commercially available NIR photodetectors, highlighting the potential of PdSe 2 -based heterostructures as scalable, CMOS-compatible platforms for high-performance near-IR detection.

Infrared (IR) photodetectors↗

Arrangement for damping the resonance in a laser diode

An arrangement for damping the resonance in a laser diode is described. This arrangement includes an additional layer which together with the conventional laser diode form a structure (35) of a bipolar transistor. Therein, the additional layer serves as the collector, the cladding layer next to it as the base, and the active region and the other cladding layer as the emitter. A capacitor is connected across the base and the collector. It is chosen so that at any frequency above a certain selected frequency which is far below the resonance frequency the capacitor impedance is very low, effectively shorting the base to the collector.

Katz, J.↗

ICI optical data storage tape

Optical data storage tape is now a commercial reality. The world's first successful development of a digital optical tape system is complete. This is based on the Creo 1003 optical tape recorder with ICI 1012 write-once optical tape media. Flexible optical media offers many benefits in terms of manufacture; for a given capital investment, continuous, web-coating techniques produce more square meters of media than batch coating. The coated layers consist of a backcoat on the non-active side; on the active side there is a subbing layer, then reflector, dye/polymer, and transparent protective overcoat. All these layers have been tailored for ease of manufacture and specific functional characteristics.

Mclean, Robert A.↗

In-situ polymerization to protect lithium metal electrodes

An electrode including an electrode active material including lithium (Li) and a polymer layer coating at least a portion of the electrode active material is provided. The polymer layer includes a polymerization product of a monomer having Formula I: where R1 and R2 are independently an aryl or a branched or unbranched C1-C10 alkyl and X1 and X2 are independently chlorine (Cl), bromine (Br), or iodine (I).

Li, Binsong↗

Controlling N speciation in solution synthesis of N-doped carbon materials

Carbon-based materials, such as graphite and its functionalized/doped derivatives, are promising lightweight layered materials for hydrogen activation and storage. Their propensity to control the thermodynamics of hydrogen binding and the kinetics of hydrogen mobility strongly depends on the speciation and the arrangement of dopants. In this study, we demonstrate precise control over dopant speciation and clustering in nitrogen-containing layered carbon materials during hydrothermal synthesis. Through extensive spectroscopic characterization and first principles simulations, we demonstrate that the formation of N-motifs can be controlled by the choice of precursor and synthesis temperature. The distinct three-dimensional architecture and porosity in graphene oxide and carbon nitride-derived materials furnish a synthetic pathway for precise control over the local and global structure of nitrogen-doped carbon materials and their activity toward the activation of molecular hydrogen.

Byun, Mi Yeon [Pacific Northwest National Laborato↗

Forced Ion Migration for Chalcogenide Phase Change Memory Device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge2Se3/SnTe, and Ge2Se3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A↗

Method of fabricating photosensitive devices with reduced process-temperature budget

A method is provided for fabricating a backside-illuminated photodetector in which a device wafer is joined to a readout wafer in an IC hybridization step. Before the IC hybridization step, the device layer is defined in the device wafer, and an LPCVD layer is formed over the device layer. The LPCVD layer may be a passivation layer, an antireflection coating, or both. The side of the device wafer having the LPCVD layer is bonded to a handle wafer, the IC is hybridized by mating the device wafer to the readout wafer, and the handle wafer is then removed, exposing the LPCVD layer. Because the LPCVD layer is formed before the active devices are fabricated, it can be made by high-temperature techniques for deposition and processing. Accordingly, a layer of high quality can be fabricated without any hazard to the active devices.

Kay, Randolph R.↗

Forced ion migration for chalcogenide phase change memory device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more that two data states.

Campbell, Kristy A.↗

Forced ion migration for chalcogenide phase change memory device

Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge.sub.2Se.sub.3/SnTe, and Ge.sub.2Se.sub.3/SnSe stacks. All devices exhibited resistance switching behavior. The polarity of the applied voltage with respect to the SnTe or SnSe layer was critical to the memory switching properties, due to the electric field induced movement of either Sn or Te into the Ge-chalcogenide layer. One embodiment of the invention is a device comprising a stack of chalcogenide-containing layers which exhibit phase-change switching only after a reverse polarity voltage potential is applied across the stack causing ion movement into an adjacent layer and thus "activating" the device to act as a phase-change random access memory device or a reconfigurable electronics device when the applied voltage potential is returned to the normal polarity. Another embodiment of the invention is a device that is capable of exhibiting more than two data states.

Campbell, Kristy A.↗

On the stabilization of three-dimensional boundary layers by suction and cooling

A significant reduction in the drag of transonic aircraft can be achieved by using an active method of boundary-layer control to maintain laminar flow on the aerodynamic surfaces. The stabilizing influence of suction for both favorable and adverse pressure gradients is demonstrated by means of the self-similar incompressible three-dimensional boundary layers on yawed wedges. Profile instability is measured by the maximum amplification rate of fixed-frequency disturbances computed according to linearized, locally parallel, spatial stability theory. Suction is found to be more effective in controlling Tollmien-Schlichting instability than stationary cross-flow disturbances. The effectiveness of surface cooling as a method of stabilization is compared with suction for the boundary layers on a transonic 35 deg swept wing of infinite span. It is found from compressible stability theory that when the surface is cooled to a uniform temperature such that the maximum cross-flow velocity is reduced by the same amount as with a uniform suction distribution, the stabilizing effect of cooling on cross-flow disturbances is less than with suction.

Mack, L. M.↗

High-Capacity, High-Voltage Composite Oxide Cathode Materials

This SBIR project integrates theoretical and experimental work to enable a new generation of high-capacity, high-voltage cathode materials that will lead to high-performance, robust energy storage systems. At low operating temperatures, commercially available electrode materials for lithium-ion (Li-ion) batteries do not meet energy and power requirements for NASA's planned exploration activities. NEI Corporation, in partnership with the University of California, San Diego, has developed layered composite cathode materials that increase power and energy densities at temperatures as low as 0 degC and considerably reduce the overall volume and weight of battery packs. In Phase I of the project, through innovations in the structure and morphology of composite electrode particles, the partners successfully demonstrated an energy density exceeding 1,000 Wh/kg at 4 V at room temperature. In Phase II, the team enhanced the kinetics of Li-ion transport and electronic conductivity at 0 degC. An important feature of the composite cathode is that it has at least two components that are structurally integrated. The layered material is electrochemically inactive; however, upon structural integration with a spinel material, the layered material can be electrochemically activated and deliver a large amount of energy with stable cycling.

Hagh, Nader M.↗

Durable Thin‐Film Porous Transport Electrodes for High Current Density PEM Water Electrolysis

Proton exchange membrane water electrolyzers rely on relatively expensive Ir-based catalysts for efficient and durable hydrogen production. To reduce system costs, Ir loadings can be reduced if performance and durability are maintained. Sputter deposition is a readily scalable method to synthesize uniform, low-loading catalyst layers with controlled composition. A catalyst applied directly to the porous transport layer can have advantages for performance, manufacturing simplicity, and catalyst recovery. Suitable porous transport layer porosity can minimize activity losses when reducing loadings. Here, methods are presented to deposit metallic Ir as well as amorphous and rutile Ir oxides. The activity and durability of these materials in the porous transport electrode architecture is evaluated. The metallic and amorphous forms have better initial activity, however, operation at 3 A cm −2 with 0.1 mg Ir cm −2 shows that only rutile IrO 2 maintains performance beyond 100 h with a 50 mV improvement after 700 h. A >10x reduced dissolution rate is shown for rutile IrO 2 . With a low-porosity transport layer and 0.4 mg Ir cm −2 , a steady-state voltage decay rate of 6 µV h −1 is achieved. The results demonstrate that sputter-deposited rutile IrO 2 porous transport electrodes with low Ir loading can be operated at high current density to reduce hydrogen production costs.

08 HYDROGEN↗

Supported Oxygen Evolution Catalysts by Design: Toward Lower Precious Metal Loading and Improved Conductivity in Proton Exchange Membrane Water Electrolyzers

Reducing the precious metal content of water oxidation catalysts for proton-exchange-membrane water electrolyzers remains a critical barrier to their large-scale deployment. Herein, we present an engineered architecture for supported iridium catalysts, which enables decreased precious metal content and improved activity and conductivity. The improvement in performance at lower precious metal loading is realized by the deposition of a conformal layer of platinum nanoparticles on titanium dioxide (TiO 2 ) using a facile photoreduction method to prepare conductive layer coated supports (CCSs). Platinum nanoparticles are homogeneously dispersed on TiO 2 , and the conductivity of the subsequent catalysts with 39 wt % precious group metal loadings is significantly higher than the commercial 75 wt % loaded IrO 2 -TiO 2 catalysts. The conformal conductive layer also maintains an enhanced conductivity and electrochemical activity upon thermal annealing when compared to catalysts without the conductive layer and nonconformal heterogeneous conductive layer. The iridium mass activity from half-cell studies shows a 141% improvement for CCS supported catalysts at 42% lower loadings compared to the commercial catalysts. The conductive layer also improves the single cell electrolyzer performance at a similar catalyst loading in comparison to a commercial state-of-the-art catalyst. Here, we correlate the physical properties of the engineered catalysts with their electrochemical performance in electrolyzers to understand structure-activity relationships, and we anticipate further performance improvements upon synthesis and materials optimizations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗