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At least 703 records · Page 39

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DOE OSTI2014

A thermalization energy analysis of the threshold voltage shift in amorphous indium gallium zinc oxide thin film transistors under simultaneous negative gate bias and illumination

It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gallium zinc oxide (a-IGZO) semiconducting channel suffer from a threshold voltage shift when subjected to a negative gate bias and light illumination simultaneously. In this work, a thermalization energy analysis has been applied to previously published data on negative bias under illumination stress (NBIS) in a-IGZO TFTs. A barrier to defect conversion of 0.65–0.75 eV is extracted, which is consistent with reported energies of oxygen vacancy migration. The attempt-to-escape frequency is extracted to be 10{sup 6}−10{sup 7} s{sup −1}, which suggests a weak localization of carriers in band tail states over a 20–40 nm distance. Models for the NBIS mechanism based on charge trapping are reviewed and a defect pool model is proposed in which two distinct distributions of defect states exist in the a-IGZO band gap: these are associated with states that are formed as neutrally charged and 2+ charged oxygen vacancies at the time of film formation. In this model, threshold voltage shift is not due to a defect creation process, but to a change in the energy distribution of states in the band gap upon defect migration as this allows a state formed as a neutrally charged vacancy to be converted into one formed as a 2+ charged vacancy and vice versa. Carrier localization close to the defect migration site is necessary for the conversion process to take place, and such defect migration sites are associated with conduction and valence band tail states. Under negative gate bias stressing, the conduction band tail is depleted of carriers, but the bias is insufficient to accumulate holes in the valence band tail states, and so no threshold voltage shift results. It is only under illumination that the quasi Fermi level for holes is sufficiently lowered to allow occupation of valence band tail states. The resulting charge localization then allows a negative threshold voltage shift, but only under conditions of simultaneous negative gate bias and illumination, as observed experimentally as the NBIS effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Inner surface flash-over of insulator of low-inductance high-voltage self-breakdown gas switch and its application

In this paper, the inner surface flash-over of high-voltage self-breakdown switch, which is used as a main switch of pulse modulator, is analyzed in theory by employing the method of distributed element equivalent circuit. Moreover, the field distortion of the switch is simulated by using software. The results of theoretical analysis and simulation by software show that the inner surface flash-over usually starts at the junction points among the stainless steel, insulator, and insulation gas in the switch. A switch with improved structure is designed and fabricated according to the theoretical analysis and simulation results. Several methods to avoid inner surface flash-over are used to improve the structure of switch. In experiment, the inductance of the switch is no more than 100 nH, the working voltage of the switch is about 600 kV, and the output voltage and current of the accelerator is about 500 kV and 50 kA, respectively. And the zero-to-peak rise time of output voltage at matched load is less than 30 ns due to the small inductance of switch. The original switch was broken-down after dozens of experiments, and the improved switch has been worked more than 200 times stably.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2014

Low bias stress and reduced operating voltage in SnCl{sub 2}Pc based n-type organic field-effect transistors

Vacuum deposited tin (IV) phthalocyanine dichloride (SnCl{sub 2}Pc) field-effect transistors were fabricated on polymethylmethacrylate/aluminum oxide (PMMA/Al{sub 2}O{sub 3}) bilayer gate dielectric, with reduced operating voltage and low contact resistance. The devices with top contact Ag electrodes exhibit excellent n-channel behavior with electron mobility values of 0.01 cm{sup 2}/Vs, low threshold voltages ∼4 V, current on/off ratio ∼10{sup 4} with an operating voltage of 10 V. Bias stress instability effects are investigated during long term operation using thin film devices under vacuum. We find that the amount of bias stress of SnCl{sub 2}Pc based thin film transistor is extremely small with characteristic relaxation time >10{sup 5} s obtained using stretched exponential model. Stressing the SnCl{sub 2}Pc devices by applying 10 V to the gate for half an hour results in a decrease of the source drain current, I{sub DS} of only ∼10% under low vacuum. These devices show highly stable electrical behavior under multiple scans and low threshold voltage instability under electrical dc bias stress (V{sub DS} = V{sub GS} = 10 V, for 2 h) even after 40 days.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Kinetic simulation of capacitively coupled plasmas driven by trapezoidal asymmetric voltage pulses

A kinetic Particle-In-Cell simulation with Monte Carlo Collisions was performed of a geometrically symmetric capacitively coupled, parallel-plate discharge in argon, driven by trapezoidal asymmetric voltage pulses with a period of 200 ns. The discharge was electrically asymmetric, making the ion energy distributions at the two electrodes different from one another. The fraction of the period (α), during which the voltage was kept at a constant (top-flat) positive value, was a critical control parameter. For the parameter range investigated, as α increased, the mean ion energy on the grounded electrode increased and the ions became more directional, whereas the opposite was found for the ions striking the powered electrode. The absolute value of the DC self-bias voltage decreased as α increased. Plasma instabilities, promoted by local double layers and electric field reversals during the time of the positive voltage excursion, were characterized by electron plasma waves launched from the sheath edge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Enhanced open voltage of BiFeO{sub 3} polycrystalline film by surface modification of organolead halide perovskite

Inorganic-organolead halide perovskite CH{sub 3}NH{sub 3}PbI{sub 3} modified BiFeO{sub 3} polycrystalline film has been established. The composite photoelectrode presents much larger open voltage and several magnitudes superior photoelectric conversion performance in comparison to the ordinary BiFeO{sub 3} polycrystalline film. The I-V curve shows that the short-circuit current (J{sub sc}) is 1.74 mA·cm{sup −2} and open-circuit voltage (V{sub oc}) is 1.62 V, the device's photon to current efficiency is over 1%. The large open voltage and high photovoltaic efficiency is believed to attributed to the spontaneous polarization of composite perovskite induced by BiFeO{sub 3} lattice and modified reduced work function of the modified BiFeO{sub 3} surface. Our results clearly show that the present BiFeO{sub 3}-CH{sub 3}NH{sub 3}PbI{sub 3} planar device is capable to generate a large voltage in macro scale under visible light, leading an approach to further applications on photodetectors and optoelectronic switch.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Magnetic shielding of Hall thrusters at high discharge voltages

A series of numerical simulations and experiments have been performed to assess the effectiveness of magnetic shielding in a Hall thruster operating in the discharge voltage range of 300–700 V (I{sub sp} ≈ 2000–2700 s) at 6 kW, and 800 V (I{sub sp} ≈ 3000) at 9 kW. At 6 kW, the magnetic field topology with which highly effective magnetic shielding was previously demonstrated at 300 V has been retained for all other discharge voltages; only the magnitude of the field has been changed to achieve optimum thruster performance. It is found that magnetic shielding remains highly effective for all discharge voltages studied. This is because the channel is long enough to allow hot electrons near the channel exit to cool significantly upon reaching the anode. Thus, despite the rise of the maximum electron temperature in the channel with discharge voltage, the electrons along the grazing lines of force remain cold enough to eliminate or reduce significantly parallel gradients of the plasma potential near the walls. Computed maximum erosion rates in the range of 300–700 V are found not to exceed 10{sup −2} mm/kh. Such rates are ∼3 orders of magnitude less than those observed in the unshielded version of the same thruster at 300 V. At 9 kW and 800 V, saturation of the magnetic circuit did not allow for precisely the same magnetic shielding topology as that employed during the 6-kW operation since this thruster was not designed to operate at this condition. Consequently, the maximum erosion rate at the inner wall is found to be ∼1 order of magnitude higher (∼10{sup −1} mm/kh) than that at 6 kW. At the outer wall, the ion energy is found to be below the sputtering yield threshold so no measurable erosion is expected.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2014

Voltage controlled modification of flux closure domains in planar magnetic structures for microwave applications

Voltage controlled modification of the magnetocrystalline anisotropy in a hybrid piezoelectric/ferromagnet device has been studied using Photoemission Electron Microscopy with X-ray magnetic circular dichroism as the contrast mechanism. The experimental results demonstrate that the large magnetostriction of the epitaxial Fe{sub 81}Ga{sub 19} layer enables significant modification of the domain pattern in laterally confined disc structures. In addition, micromagnetic simulations demonstrate that the strain induced modification of the magnetic anisotropy allows for voltage tuneability of the natural resonance of both the confined spin wave modes and the vortex motion. These results demonstrate the possibility for using voltage induced strain in low-power voltage tuneable magnetic microwave oscillators.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2014

Voltage and pressure scaling of streamer dynamics in a helium plasma jet with N{sub 2} co-flow

Positive polarity applied voltage and gas pressure dependent scaling of cathode directed streamer propagation properties in helium gas flow guided capillary dielectric barrier discharge have been quantified from streamer velocity, streamer current, and streamer optical diameter measurements. All measurements of the non-stochastic streamer properties have been performed in a variable gas pressure glass cell with N{sub 2} co-flow and under self-consistent Poisson electric field dominated conditions to permit data comparison with 2-D streamer dynamics models in air/nitrogen. The streamer optical diameter was found to be nearly independent of both gas pressures, from 170 Torr up to 760 Torr, and also for applied voltages from 6 to 11 kV at 520 Torr. The streamer velocity was found to increase quadratically with increased applied voltage. These observed differences in the 2-D scaling properties of ionization wave sustained cathode directed streamer propagation in helium flow channel with N{sub 2} annular co-flow compared to the streamer propagation in air or nitrogen have been shown to be caused by the remnant ionization distribution due to large differences in the dissociative recombination rates of He{sub 2}{sup +} versus N{sub 4}{sup +} ions, for this 5 kHz repetition rate applied voltage pulse generated streamers.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2014

Spin-torque diode radio-frequency detector with voltage tuned resonance

We report on a voltage-tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and insulating layers. The applied bias voltage is shown to have a significant influence on the magnetic anisotropy, and thus on the resonance frequency of the device. This influence also depends on the voltage polarity. The obtained results are accounted for in terms of the interplay of spin-transfer-torque and voltage-controlled magnetic anisotropy effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

A new approach to investigate leakage current mechanisms in infrared photodiodes from illuminated current-voltage characteristics

This paper presents a new approach to investigate leakage current mechanisms in infrared photodiodes from the illuminated current–voltage characteristics. The example of mid-wave mercury cadmium telluride photodiodes is presented to illustrate the new approach. The new method is suitable for evaluating diodes in an array environment as advance knowledge of any of the material or device parameters are not required. The thermal saturation current is estimated from the observed open circuit voltage and zero-bias current (photo-current) of the diode. The ohmic shunt resistance is estimated from the observed maximum dynamic impedance of the diode. The experimentally observed reverse bias diode current in excess of thermal current, photo-current, and ohmic shunt current is reported to be best described by an exponential function of the type, I{sub excess} = I{sub r0} + K{sub 1} exp (K{sub 2} V), where I{sub r0}, K{sub 1}, and K{sub 2} are fitting parameters and V is the applied bias voltage. Our investigations reveal a close link between the excess current and the sources of ohmic currents in the diode. Exponential growth of excess current with the applied bias voltage has been interpreted as an indication of soft breakdown of the diodes.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2014

Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

A novel high-κ organometallic lanthanide complex, Eu(tta){sub 3}L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine), is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs). The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μ{sub FET}) of 0.17 cm{sup 2} V{sup −1} s{sup −1}, threshold voltage (V{sub th}) of −0.9 V, on/off current ratio of 5 × 10{sup 3}, and subthreshold slope (SS) of 1.0 V dec{sup −1}, which is much better than that of devices obtained on conventional 300 nm SiO{sub 2} substrate (0.13 cm{sup 2} V{sup −1} s{sup −1}, −7.3 V and 3.1 V dec{sup −1} for μ{sub FET}, V{sub th} and SS value when operated at −30 V). These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

36 MATERIALS SCIENCE↗

DOE OSTI2014

Alternative p-doped hole transport material for low operating voltage and high efficiency organic light-emitting diodes

We investigate the properties of N,N′-[(Diphenyl-N,N′-bis)9,9,-dimethyl-fluoren-2-yl]-benzidine (BF-DPB) as hole transport material (HTL) in organic light-emitting diodes (OLEDs) and compare BF-DPB to the commonly used HTLs N,N,N′,N′-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD), 2,2′,7,7′-tetrakis(N,N′-di-p-methylphenylamino)-9,9′-spirobifluorene (Spiro-TTB), and N,N′-di(naphtalene-1-yl)-N,N′-diphenylbenzidine (NPB). The influence of 2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ p-dopant) concentration in BF-DPB on the operation voltage and efficiency of red and green phosphorescent OLEDs is studied; best results are achieved at 4 wt. % doping. Without any light extraction structure, BF-DPB based red (green) OLEDs achieve a luminous efficacy of 35 .1 lm/W (74 .0 lm/W) at 1000 cd/m{sup 2} and reach a very high brightness of 10 000 cd/m{sup 2} at a very low voltage of 3.2 V (3.1 V). We attribute this exceptionally low driving voltage to the high ionization potential of BF-DPB which enables more efficient hole injection from BF-DPB to the adjacent electron blocking layer. The high efficiency and low driving voltage lead to a significantly lower luminous efficacy roll-off compared to the other compounds and render BF-DPB an excellent HTL material for highly efficient OLEDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Investigation about decoupling capacitors of PMT voltage divider effects on neutron-gamma discrimination

Scintillators are almost used in any nuclear laboratory. These detectors combine of scintillation materials, PMT and a voltage divider. Voltage dividers are different in resistive ladder design. But the effect of decoupling capacitors and damping resistors haven’t discussed yet. In this paper at first a good equilibrium circuit designed for PMT, and it was used for investigating about capacitors and resistors in much manner. Results show that decoupling capacitors have great effect on PMT output pulses. In this research, it was tried to investigate the effect of Capacitor’s value and places on PMT voltage divider in Neutron-Gamma discrimination capability. Therefore, the voltage divider circuit for R329-02 Hamamatsu PMT was made and Zero Cross method used for neutron-gamma discrimination. The neutron source was a 20Ci Am-Be. Anode and Dynode pulses and discrimination spectrum were saved. The results showed that the pulse height and discrimination quality change with the value and setting of capacitors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2015

Current-voltage characteristics of dc corona discharges in air between coaxial cylinders

This paper presents the experimental measurement and numerical analysis of the current-voltage characteristics of dc corona discharges in air between coaxial cylinders. The current-voltage characteristics for both positive and negative corona discharges were measured within a specially designed corona cage. Then the measured results were fitted by different empirical formulae and analyzed by the fluid model. The current-voltage characteristics between coaxial cylinders can be expressed as I = C(U − U{sub 0}){sup m}, where m is within the range 1.5–2.0, which is similar to the point-plane electrode system. The ionization region has no significant effect on the current-voltage characteristic under a low corona current, while it will affect the distribution for the negative corona under a high corona current. The surface onset fields and ion mobilities were emphatically discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2015

Voltage modulation of propagating spin waves in Fe

The effect of a voltage application on propagating spin waves in single-crystalline 5 nm-Fe layer was investigated. Two micro-sized antennas were employed to excite and detect the propagating spin waves. The voltage effect was characterized using AC lock-in technique. As a result, the resonant field of the magnetostatic surface wave in the Fe was clearly modulated by the voltage application. The modulation is attributed to the voltage induced magnetic anisotropy change in ferromagnetic metals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2015

Characteristics of titanium dioxide nanostructures synthesized via electrochemical anodization at different applied voltages

This paper presents the study of the growth of nanostructure titanium dioxide (TiO{sub 2}) via electrochemical anodization method. Both constant and alternating anodization voltage would be applied in this study. The effects of applied voltage on the morphological and structural properties were studied. Images of field emission scanning electron microscope (FE-SEM) revealed that morphology of nanostructure could be manipulated by changing the type and amount of applied voltage. Besides that, X-ray diffraction (XRD) results indicated that crystalline structures (anatase and rutile) could be obtained after being annealed at 700°C for 60 minutes. By analysing the data in XRD measurements, crystallite size of the TiO{sub 2} could be calculated by using the Scherrer method. Besides that, the relationship between mean crystallites sizes and anodization voltage would also be further studied in this paper.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2015

Voltage linearity modulation and polarity dependent conduction in metal-insulator-metal capacitors with atomic-layer-deposited Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} nano-stacks

Excellent voltage linearity of metal-insulator-metal (MIM) capacitors is highly required for next generation radio frequency integration circuits. In this work, employing atomic layer deposition technique, we demonstrated how the voltage linearity of MIM capacitors was modulated by adding different thickness of SiO{sub 2} layer to the nano-stack of Al{sub 2}O{sub 3}/ZrO{sub 2}. It was found that the quadratic voltage coefficient of capacitance (α) can be effectively reduced from 1279 to −75 ppm/V{sup 2} with increasing the thickness of SiO{sub 2} from zero to 4 nm, which is more powerful than increasing the thickness of ZrO{sub 2} in the Al{sub 2}O{sub 3}/ZrO{sub 2} stack. This is attributed to counteraction between the positive α for Al{sub 2}O{sub 3}/ZrO{sub 2} and the negative one for SiO{sub 2} in the MIM capacitors with Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} stacks. Interestingly, voltage-polarity dependent conduction behaviors in the MIM capacitors were observed. For electron bottom-injection, the addition of SiO{sub 2} obviously suppressed the leakage current; however, it abnormally increased the leakage current for electron top-injection. These are ascribed to the co-existence of shallow and deep traps in ZrO{sub 2}, and the former is in favor of the field-assisted tunnelling conduction and the latter contributes to the trap-assisted tunnelling process. The above findings will be beneficial to device design and process optimization for high performance MIM capacitors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Comparing the magnetic resonant coupling radiofrequency stimulation to the traditional approaches: Ex-vivo tissue voltage measurement and electromagnetic simulation analysis

Recently, the design concept of magnetic resonant coupling has been adapted to electromagnetic therapy applications such as non-invasive radiofrequency (RF) stimulation. This technique can significantly increase the electric field radiated from the magnetic coil at the stimulation target, and hence enhancing the current flowing through the nerve, thus enabling stimulation. In this paper, the developed magnetic resonant coupling (MRC) stimulation, magnetic stimulation (MS) and transcutaneous electrical nerve stimulation (TENS) are compared. The differences between the MRC RF stimulation and other techniques are presented in terms of the operating mechanism, ex-vivo tissue voltage measurement and electromagnetic simulation analysis. The ev-vivo tissue voltage measurement experiment is performed on the compared devices based on measuring the voltage induced by electromagnetic induction at the tissue. The focusing effect, E field and voltage induced across the tissue, and the attenuation due to the increase of separation between the coil and the target are analyzed. The electromagnetic stimulation will also be performed to obtain the electric field and magnetic field distribution around the biological medium. The electric field intensity is proportional to the induced current and the magnetic field is corresponding to the electromagnetic induction across the biological medium. The comparison between the MRC RF stimulator and the MS and TENS devices revealed that the MRC RF stimulator has several advantages over the others for the applications of inducing current in the biological medium for stimulation purposes.

60 APPLIED LIFE SCIENCES↗