Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Stoichiometry”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Growing LaAlO{sub 3}/SrTiO{sub 3} interfaces by sputter deposition

Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO{sub 3} on SrTiO{sub 3} substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Field evaporation of ZnO: A first-principles study

With recent advances in atom probe tomography of insulators and semiconductors, there is a need to understand high electrostatic field effects in these materials as well as the details of field evaporation. We use density functional theory to study field effects in ZnO clusters calculating the potential energy curves, the local field distribution, the polarizability, and the dielectric constant as a function of field strength. We confirm that, as in MgO, the HOMO-LUMO gap of a ZnO cluster closes at the evaporation field strength signaling field-induced metallization of the insulator. Following the structural changes in the cluster at the evaporation field strength, we can identify the field evaporated species, in particular, we show that the most abundant ion, Zn{sup 2+}, is NOT post-ionized but leaves the surface as 2+ largely confirming the experimental observations. Our results also help to explain problems related to stoichiometry in the mass spectra measured in atom probe tomography.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

A new form of Ca{sub 3}P{sub 2} with a ring of Dirac nodes

We report the synthesis and crystal structure of a new high-temperature form of Ca{sub 3}P{sub 2}. The crystal structure was determined through Rietveld refinements of synchrotron powder x-ray diffraction data. This form of Ca{sub 3}P{sub 2} has a crystal structure of the hexagonal Mn{sub 5}Si{sub 3} type, with a Ca ion deficiency compared to the ideal 5:3 stoichiometry. This yields a stable, charge-balanced compound of Ca{sup 2+} and P{sup 3−}. We also report the observation of a secondary hydride phase, Ca{sub 5}P{sub 3}H, which again is a charge-balanced compound. The calculated band structure of Ca{sub 3}P{sub 2} indicates that it is a three-dimensional Dirac semimetal with a highly unusual ring of Dirac nodes at the Fermi level. The Dirac states are protected against gap opening by a mirror plane in a manner analogous to what is seen for graphene.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Micro-structural characterization of low resistive metallic Ni germanide growth on annealing of Ni-Ge multilayer

Nickel-Germanides are an important class of metal semiconductor alloys because of their suitability in microelectronics applications. Here we report successful formation and detailed characterization of NiGe metallic alloy phase at the interfaces of a Ni-Ge multilayer on controlled annealing at relatively low temperature ∼ 250 °C. Using x-ray and polarized neutron reflectometry, we could estimate the width of the interfacial alloys formed with nanometer resolution and found the alloy stoichiometry to be equiatomic NiGe, a desirable low-resistance interconnect. We found significant drop in resistance (∼ 50%) on annealing the Ni-Ge multilayer suggesting metallic nature of alloy phase at the interfaces. Further we estimated the resistivity of the alloy phase to be ∼ 59μΩ cm.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Tuning thermal conductivity in homoepitaxial SrTiO{sub 3} films via defects

We demonstrate the ability to tune the thermal conductivity of homoepitaxial SrTiO{sub 3} films deposited by reactive molecular-beam epitaxy by varying growth temperature, oxidation environment, and cation stoichiometry. Both point defects and planar defects decrease the longitudinal thermal conductivity (k{sub 33}), with the greatest decrease in films of the same composition observed for films containing planar defects oriented perpendicular to the direction of heat flow. The longitudinal thermal conductivity can be modified by as much as 80%—from 11.5 W m{sup −1}K{sup −1} for stoichiometric homoepitaxial SrTiO{sub 3} to 2 W m{sup −1}K{sup −1} for strontium-rich homoepitaxial Sr{sub 1+δ}TiO{sub x} films—by incorporating (SrO){sub 2} Ruddlesden-Popper planar defects.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Controlling magnetic domain wall motion in the creep regime in He{sup +}-irradiated CoFeB/MgO films with perpendicular anisotropy

This study presents the effective tuning of perpendicular magnetic anisotropy in CoFeB/MgO thin films by He{sup +} ion irradiation and its effect on domain wall motion in a low field regime. Magnetic anisotropy and saturation magnetisation are found to decrease as a function of the irradiation dose which can be related to the observed irradiation-induced changes in stoichiometry at the CoFeB/MgO interface. These changes in the magnetic intrinsic properties of the film are reflected in the domain wall dynamics at low magnetic fields (H) where irradiation is found to induce a significant decrease in domain wall velocity (v). For all irradiation doses, domain wall velocities at low fields are well described by a creep law, where Ln(v) vs. H{sup −1∕4} behaves linearly, up to a maximum field H*, which has been considered as an approximation to the value of the depinning field H{sub dep}. In turn, H* ≈ H{sub dep} is seen to increase as a function of the irradiation dose, indicating an irradiation-induced extension of the creep regime of domain wall motion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Characterization of the insulator barrier and the superconducting transition temperature in GdBa{sub 2}Cu{sub 3}O{sub 7−δ}/BaTiO{sub 3} bilayers for application in tunnel junctions

The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO{sub 3} tunnel barrier deposited on a 16 nm thick GdBa{sub 2}Cu{sub 3}O{sub 7−δ} thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO{sub 3} barrier thickness between 1.6 and 4 nm. The BaTiO{sub 3} layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the applied voltage). The GdBa{sub 2}Cu{sub 3}O{sub 7−δ} electrode is totally covered by a BaTiO{sub 3} thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO{sub 3} top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO{sub 3} thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa{sub 2}Cu{sub 3}O{sub 7−δ}. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO{sub 3} barrier)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

The mystery of missing species in atom probe tomography of composite materials

There is a serious problem in atom probe tomography of composite materials such as oxides that even from stoichiometric samples one observes non-stoichiometric ion yields. We present a quantitative model that explains the non-stoichiometry allowing a fit to experimental data of ion yields as a function of applied field to extract activation barriers and prefactors. The numbers are confirmed by density functional theory. We also show that for oxides the missing oxygen is thermally desorbed as neutral O{sub 2}, either directly or associatively. Finally, we suggest methods to improve the experimental setup.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Development of a dipodal Schiff base ligand with N-imine and O-naphtholate donors: A potential chelator towards Cu(II) metal ion established through potentiometric and spectrophotometric studies

A novel hydroxynaphthaldehyde derived Schiff base ligand N,N’-bis-[2-[(2-hydroxy-1-naphthyl)methyleneamino]ethyl]propanediamide (DOTA2HNAP) containing nitrogen and oxygen donor atoms has been developed. The lowest energy molecular structure of DOTA2HNAP and its complexes with Cu (II) metal ion were examined by molecular mechanics using MM+ force which later was re-optimized by semi-empirical method. The theoretical IR and UV spectra of the ligand were obtained using semi empirical/ZINDO/PM3 and were compared with the experimental ones. The coordinating ability of DOTA2HNAP with H{sup +} and Cu(II) ions was investigated in 1:99 (DMSO: water) binary solvent mixture at 25±1°C by potentiometric and spectrophotometric method. The electronic spectra of the ligand show three distinct peaks (253nm, 320nm and 360nm) implicating existence of the Schiff base in quinone form that was well supported by theoretical spectral studies. Out of various complex species forming in solution, all the metal ions show higher stability of complexes when in 1:1 metal-ligand stoichiometry, binding through two N-imine and two O-naphtholate groups.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Cu diffusion in single-crystal and polycrystalline TiN barrier layers: A high-resolution experimental study supported by first-principles calculations

Dense single-crystal and polycrystalline TiN/Cu stacks were prepared by unbalanced DC magnetron sputter deposition at a substrate temperature of 700 °C and a pulsed bias potential of −100 V. The microstructural variation was achieved by using two different substrate materials, MgO(001) and thermally oxidized Si(001), respectively. Subsequently, the stacks were subjected to isothermal annealing treatments at 900 °C for 1 h in high vacuum to induce the diffusion of Cu into the TiN. The performance of the TiN diffusion barrier layers was evaluated by cross-sectional transmission electron microscopy in combination with energy-dispersive X-ray spectrometry mapping and atom probe tomography. No Cu penetration was evident in the single-crystal stack up to annealing temperatures of 900 °C, due to the low density of line and planar defects in single-crystal TiN. However, at higher annealing temperatures when diffusion becomes more prominent, density-functional theory calculations predict a stoichiometry-dependent atomic diffusion mechanism of Cu in bulk TiN, with Cu diffusing on the N sublattice for the experimental N/Ti ratio. In comparison, localized diffusion of Cu along grain boundaries in the columnar polycrystalline TiN barriers was detected after the annealing treatment. The maximum observed diffusion length was approximately 30 nm, yielding a grain boundary diffusion coefficient of the order of 10{sup −16} cm{sup 2} s{sup −1} at 900 °C. This is 10 to 100 times less than for comparable underdense polycrystalline TiN coatings deposited without external substrate heating or bias potential. The combined numerical and experimental approach presented in this paper enables the contrasting juxtaposition of diffusion phenomena and mechanisms in two TiN coatings, which differ from each other only in the presence of grain boundaries.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Evolution of grain boundary conduction with increasing temperature in pure and Ti doped Co ferrite materials

We report on the structural, temperature, and frequency dependent impedance studies of Ti doped cobalt ferrite material (CoFe{sub 1.95}Ti{sub 0.05}O{sub 4}) in comparison with the pure CoFe{sub 2}O{sub 4}. XRD and Raman spectroscopy studies confirm the inverse spinel crystallization of the materials with space group of Fd-3 m. Scanning electron microscope images shows the microcrystalline nature of the particles. Homogeneity, stoichiometry, and ionic states of the ions in the composition were confirmed by energy dispersive X-ray analysis and X-ray photoelectron spectroscopic studies. Temperature and frequency dependent real (Z′) and imaginary (Z″) part of the impedance shows the existence of relaxation processes and their distribution in CoFe{sub 2}O{sub 4} and CoFe{sub 1.95}Ti{sub 0.05}O{sub 4} materials. Complex impedance spectroscopy studies at low temperatures shows that the conductivity in these materials is predominantly due to the intrinsic bulk grains. With increasing the temperature, evolution of grain boundary conduction is clearly seen through the appearance of a second semi-circle in the complex impedance plots. Room temperature total dc conductivity of both CoFe{sub 2}O{sub 4} and CoFe{sub 1.95}Ti{sub 0.05}O{sub 4} materials is found to be 5.78 × 10{sup −8} and 1.61 × 10{sup −7} S/cm, respectively. Temperature variation of dc electrical conductivity follows the Arrhenius relationship and the activation energies for CoFe{sub 2}O{sub 4} corresponding to grain (0.55 eV for CoFe{sub 2}O{sub 4}), grain boundary (0.52 eV), and total conduction (0.54 eV) are discussed. Observation of well distinguishable grain and grain boundary conductions and the low conductivity values in CoFe{sub 2}O{sub 4} and CoFe{sub 1.95}Ti{sub 0.05}O{sub 4} materials indicates that these materials are promising candidates for the high frequency applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Superconducting properties and chemical composition of NbTiN thin films with different thickness

In this research, we systematically investigated the superconducting properties and chemical composition of NbTiN thin films prepared on single-crystal MgO substrates. The NbTiN thin films with different thicknesses (4–100 nm) were deposited by reactive DC magnetron sputtering at ambient temperature. We measured and analyzed the crystal structure and thickness dependence of the chemical composition using X-ray diffraction and X-ray photoelectron spectroscopy depth profiles. The films exhibited excellent superconducting properties, with a high superconducting critical temperature of 10.1 K, low resistivity (ρ{sub 20} = 93 μΩ cm), and residual resistivity ratio of 1.12 achieved for 4-nm-thick ultrathin NbTiN films prepared at the deposition current of 2.4 A. The stoichiometry and electrical properties of the films varied gradually between the initial and upper layers. A minimum ρ{sub 20} of 78 μΩ cm and a maximum residual resistivity ratio of 1.15 were observed for 12-nm-thick films, which significantly differ from the properties of NbN films with the same NaCl structure.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Position-sensitive change in the transition metal L-edge fine structures

Studying the structure and composition of solid-state materials on the atomic scale has become nearly routine in transmission electron microscopy with the development of novel electron optics and electron sources. In particular, with spatial resolutions better than 0.1 nm and energy resolution smaller than 100 meV, the stoichiometry, bonding, and coordination can now be examined on similar scales. Aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy (EELS) have played a crucial role in identifying charge ordering, valence, and as spin state transitions in transition metal perovskite oxides. In this letter, we investigate the effects of ever-decreasing electron-probe sizes on the measured near-edge fine-structure of the transition metal core-loss edge using EELS. We find that for certain transition metal perovskites, the position of the electron probe with respect to the atomic column is crucial in determining the correct valence state. Several reasons for the observed position-sensitive EELS fine-structure are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Microstructure and defects probed by Raman spectroscopy in lithium niobate crystals and devices

Raman microprobe applied on LiNbO{sub 3} (LN) crystals and derived materials or devices is shown to be a tool to detect either local variations or changes of the whole structure. Position, width, or intensity of one Raman line can be used as markers of a structural change. Indeed, each Raman line can be assigned to a peculiar ionic motion and is differently sensitive to application of strain, temperature change, and electric field. Some vibrational modes are especially associated to the site of Li ion, or Nb ion, or still oxygen octahedron, so that they can be affected by the introduction of dopant ion on one or another site. Therefore, Raman Spectroscopy (RS) can be used as a site spectroscopy to describe the mechanism of doping incorporation in the LN lattice, allowing the optimization of some linear and non-linear optical properties according to the dopant concentration and substitution site. The composition or the content of non-stoichiometry related defects could be derived from the width of some lines. Any damage or local disorder can be detected by a line broadening. The quality or preservation of the structure after chemical treatment, or laser pulses, can be thus checked. The structure of ion-implanted or proton-exchanged wave-guides and periodically poled lithium niobate as well can be imaged from frequency shift or intensity change of some lines. RS is thus a useful way to control the structure of LN and/or to optimize the preparation parameters and its properties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Electronic and optical properties of titanium nitride bulk and surfaces from first principles calculations

Prediction of the frequency-dependent dielectric function of thin films poses computational challenges, and at the same time experimental characterization by spectroscopic ellipsometry remains difficult to interpret because of changes in stoichiometry and surface morphology, temperature, thickness of the film, or substrate. In this work, we report calculations for titanium nitride (TiN), a promising material for plasmonic applications because of less loss and other practical advantages compared to noble metals. We investigated structural, electronic, and optical properties of stoichiometric bulk TiN, as well as of the TiN(100), TiN(110), and TiN(111) outermost surfaces. Density functional theory (DFT) and many-body GW methods (Green's (G) function-based approximation with screened Coulomb interaction (W)) were used, ranging from G{sub 0}W{sub 0}, GW{sub 0} to partially self-consistent sc-GW{sub 0}, as well as the GW-BSE (Bethe-Salpeter equation) and time-dependent DFT (TDDFT) methods for prediction of the optical properties. Structural parameters and the band structure for bulk TiN were shown to be consistent with previous work. Calculated dielectric functions, plasma frequencies, reflectivity, and the electron energy loss spectrum demonstrated consistency with experiment at the GW{sub 0}-BSE level. Deviations from experimental data are expected due to varying experimental conditions. Comparison of our results to spectroscopic ellipsometry data for realistic nanostructures has shown that although TDDFT may provide a computationally feasible level of theory in evaluation of the dielectric function, application is subject to validation with GW-BSE calculations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

We have re-investigated growth and magnetic properties of Cr{sub 2}CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr{sub 2}CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr{sub 2}CoGa Heusler phase, rather than Co{sub 2}CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 {sup o}C. The measured small spin moment of Cr{sub 2}CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr{sub 2}CoGa and the existence of the disorders and phase separation.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Thermodynamic analysis of tar reforming through auto-thermal reforming process

Fixed bed gasification is a simple and suitable technology for small scale power generation. One of the disadvantages of this technology is producing tar. So far, tar is not utilized yet and being waste that should be treated into a more useful product. This paper presents a thermodynamic analysis of tar conversion into gas producer through non-catalytic auto-thermal reforming technology. Tar was converted into components, C, H, O, N and S, and then reacted with oxidant such as mixture of air or pure oxygen. Thus, this reaction occurred auto-thermally and reached chemical equilibrium. The sensitivity analysis resulted that the most promising process performance occurred at flow rate of air was reached 43% of stoichiometry while temperature of process is 1100°C, the addition of pure oxygen is 40% and preheating of oxidant flow is 250°C. The yield of the most promising process performance between 11.15-11.17 kmol/h and cold gas efficiency was between 73.8-73.9%.The results of this study indicated that thermodynamically the conversion of tar into producer gas through non-catalytic auto-thermal reformingis more promising.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Two-dimensional percolation threshold in confined Si nanoparticle networks

Non-percolating and percolating silicon quantum dot (QD) networks were investigated by plane-view energy filtered transmission electron microscopy (EF-TEM). The Si QD networks were prepared by plasma enhanced chemical vapor deposition on free standing 5 nm Si{sub 3}N{sub 4} membranes, followed by high temperature annealing. The percolation threshold from non-percolating to percolating networks is found to be in between a SiO{sub x} stoichiometry of SiO{sub 0.5} up to SiO{sub 0.7}. Using the EF-TEM images, key structural parameters of the Si QD ensemble were extracted and compared, i.e., their size distribution, nearest neighbor distance, and circularity. Increasing the silicon excess within the SiO{sub x} layer results in an ensemble of closer spaced, less size-controlled, and less circular Si QDs that give rise to coupling effects. Furthermore, the influence of the structural parameters on the optical and electrical Si QD ensemble properties is discussed.

36 MATERIALS SCIENCE↗