Lithium-doped, radiation-resistant silicon solar cells.
Lithium use in silicon solar cell for radiation resistance improvement, noting preservation of minority carrier lifetime
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Lithium use in silicon solar cell for radiation resistance improvement, noting preservation of minority carrier lifetime
A test program is conducted to determine thin solar cell annealing effects using a laser energy source. A CO2 continuous-wave laser was used in annealing experiments on 50 micrometers-thick silicon solar cells after proton irradiation. Test cells were irradiated to a fluence of 1.0 x 10 to the 12th power protons/sq cm with 1.9 MeV protons. After irradiation, those cells receiving full proton dosage were degraded by an average of 30% in output power. In annealing tests laser beam exposure times on the solar cell varied from 2 seconds to 16 seconds reaching cell temperatures of from 400 C to 500 C. Under those conditions annealing test results showed recovery in cell output power of from 33% to 90%.
A computer program was designed for the analysis of variable composition solar cells and applied to several proposed solar cell structures using appropriate semiconductor materials. The program simulates solar cells made of a ternary alloy of two binary semiconductors with an arbitrary composition profile, and an abrupt or Gaussian doping profile of polarity n-on-p or p-on-n with arbitrary doping levels. Once the device structure is specified, the program numerically solves a complete set of differential equations and calculates electrostatic potential, quasi-Fermi levels, carrier concentrations and current densities, total current density and efficiency as functions of terminal voltage and position within the cell. These results are then recorded by computer in tabulated or plotted form for interpretation by the user.
In proposed solar-cell design, layers of polycrystalline silicon grown near front metal grid and back metal surface. Net electrical effect increases open-circuit voltage and short-circuit current, resulting in greater cell power output and energy conversion efficiency. Solar-cell configuration differs from existing one in that layers of doped polycrystalline silicon added to reduce recombination in emitter and back surface field regions.
A polymer syrup for encapsulating solar cell assemblies. The syrup includes uncrosslinked poly(n-butyl)acrylate dissolved in n-butyl acrylate monomer. Preparation of the poly(n-butyl)acrylate and preparation of the polymer syrup is disclosed. Methods for applying the polymer syrup to solar cell assemblies as an encapsulating pottant are described. Also included is a method for solar cell construction utilizing the polymer syrup as a dual purpose adhesive and encapsulating material.
The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.
Over the years, the photovoltaic market, worldwide, has been witnessing a double-digit growth rate. The silicon solar cell manufacturing technology has evolved to utilize raw materials optimally to address this growth. One of the ways in which manufacturers are addressing the challenge is by increasing the cell size and making thinner wafers. With this change in parameters, understanding the metal contact formation in solar cells becomes paramount to improve their efficiency. Screen printing is a widely used method to form metal contacts on solar cells and is ideally suited for large-volume manufacturing. This paper presents a review of the (a) role of screen printing in various solar cell architectures and (b) existing models for current conduction and contact formation mechanisms. An alternate approach to current conduction and contact formation mechanism in silicon solar cells is proposed.
The development and application of a variable composition solar cell computer analysis program is discussed. The basic device equations are derived and results of the computer analysis of several Al(x)Ga(1-x)As and GaAs(1-x)P(x) solar cell structures are presented along with a discussion of the effects of interface states and various composition and doping profiles on maximum solar cell efficiency. Interface states are found to be responsible for a severe reduction in the efficiency of GaAs(1-x)P(x) cells, but do not significantly affect the behavior of Al(x)Ga(1-x)As cells. The depth of the p-n junction below the wide bandgap window layer is a critical factor in determining the loss of minority carriers to interface recombination at the heterojunction.
It is noted that nickel metallization of silicon solar cells offers a relatively inexpensive method of making electrical contact with the surface of the cell. More expensive methods, involving precious metals and costly processes, are widely used; these have been developed for space applications, where considerations of reliability predominate over those of cost. Since recent interest in terrestrial applications of solar cells has led to an increased concern over cost, nickel has assumed a position as a major candidate for solar cell metallization. It is shown that sintering can improve the integrity of the nickel-silicon bond. Evidence that the nickel-silicon contact can survive moderate environmental stress is presented.
We demonstrate a solar cell on reformed porous Ge with an efficiency of 7.7%. We generate mesopores in (100) Ge by bipolar electrochemical etching and anneal them at high temperature. The pores coalesce deep in the structure rather than at the surface as desired, although resulting in coarse superficial morphology unsuitable for device growth. To combat this issue, we developed a surface treatment involving an HBr dip, annealing at 415 degrees C, and a postannealing ultrasonic De-ionized water dip to improve the surface structure, resulting in a smoother reformed surface on which we grow a GaInAs solar cell. The structure retains embedded pores after growth and the transitions between Ge and III-V layers are distinct. The solar cell fabricated using the improved coalescence has an efficiency of 4.5%. The efficiency improves to 7.7% by isolating the rest of the device from three limiting localized shunt areas. Protruding defects in the porous Ge and III-V layers still limit the performance, but this work establishes a step toward the technical viability of this exfoliation approach, showing decent efficiency if protruding defects can be removed or reduced.
To reduce labor, industrial robot used for solar-cell positioning and soldering operations. Cassette unloader feeds solar cell to vacuum chuck, which rotates cell into proper orientation as determined by optical sensor. Solder paste and interconnect ribbons are applied to cell. Industrial robot then picks up cell, heats it by RF inductions, and solders it into position in solar cell.
The measurement of the electrical performance characteristics of individual solar cells is discussed. One of the reasons is determination of the output power, measurement of the effect of various degradation mechanisms, and separation of cells by current and voltage for eventual use in series and parallel combinations. Major problem areas in making accurate performance measurements are the determination of the irradiance level during measurement, the measurement and control of cell junction temperature, and the contacting of the separate current and potential leads to the cell under test. Solar cells respond to only part of the solar spectrum, irradiance measurement made with blackbody detectors lead to spectral mismatch errors. The use of reference cells with a spectral response similar to that of the test cell reduces this error. Reference cells are calibrated at standard atmospheric conditions with all cells calibrated at the same conditions.
The evaluation focused on the following subjects: (1) the relative merits of alternative solar cell materials, based on performance and availability, (2) the best manufacturing methods for various solar cell options and the effects of extremely large production volumes on their ultimate costs and operational characteristics, (3) the areas of uncertainty in achieving large solar cell production volumes, (4) the effects of concentration ratios on solar array mass and system performance, (5) the factors influencing solar cell life in the radiation environment during transport to and in geosynchronous orbit, and (6) the merits of conducting solar cell manufacturing operations in space.
Perimeter recombination is one of the causes identified for having a nonuniform luminescent coupling effect in III-V multijunction solar cells. A potential solution could be the electrical passivation of the multijunction solar cell perimeter. To test this hypothesis, electrical passivation of InGaP/GaAs/Ge 3-junction solar cells was done by the atomic layer deposition of thin Al2O3 films. Further, perimeter passivation of a 3-junction solar cell relatively increased current collection measured at luminescent coupling and direct subcell excitation by as much as 11.4% and 29.8%, respectively. Meanwhile, the current homogeneity improved relatively by as much as 7.9% after electrical passivation. At 1-sun global standard illumination (AM 1.5G), 0.2% absolute conversion efficiency increase was achieved. Therefore, electrical passivation of fully working III-V multijunction solar cells is a non-invasive, post-treatment process that can recover losses due to surface defects caused by oxidation.
The Forward Technology Solar Cell Experiment (FTSCE) is a space solar cell experiment built as part of the Fifth Materials on the International Space Station Experiment (MISSE-5): Data Acquisition and Control Hardware and Software. It represents a collaborative effort between the NASA Glenn Research Center, the Naval Research Laboratory, and the U.S. Naval Academy. The purpose of this experiment is to place current and future solar cell technologies on orbit where they will be characterized and validated. This is in response to recent on-orbit and ground test results that raised concerns about the in-space survivability of new solar cell technologies and about current ground test methodology. The various components of the FTSCE are assembled into a passive experiment container--a 2- by 2- by 4-in. folding metal container that will be attached by an astronaut to the outer structure of the International Space Station. Data collected by the FTSCE will be relayed to the ground through a transmitter assembled by the U.S. Naval Academy. Data-acquisition electronics and software were designed to be tolerant of the thermal and radiation effects expected on orbit. The experiment has been verified and readied for flight on STS-114.
The development and application of a graded bandgap solar cell computer analysis program is discussed. The basic device equations as used in the computer analysis are discussed and the techniques used to model material parameter variations are described. Finally, the results of the computer analysis of several Al(x)Ga(1-x)As and GaAs(1-x)P(x) solar cell structures are presented along with a discussion of the effects of interface states and various composition profiles on maximum solar cell efficiency.
Bifacial photovoltaics (PV) harvest solar irradiance from both their front and rear surfaces, boosting energy conversion efficiency to maximize their electrical power production. For single-junction perovskite solar cells (PSCs), the performance of bifacial configurations is still far behind that of their state-of-the-art monofacial counterparts. Here, in this paper, we report on highly efficient, bifacial, single-junction PSCs based on the p-i-n (or inverted) architecture. We used optical and electrical modeling to design a transparent conducting rear electrode for bifacial PSCs to enable optimized efficiency under a variety of albedo illumination conditions. The bifaciality of the PSCs was about 91%–93%. Under concurrent bifacial measurement conditions, we obtained equivalent, stabilized bifacial power output densities of 26.9, 28.5, and 30.1 mW/cm 2 under albedos of 0.2, 0.3, and 0.5, respectively. We further showed that bifacial perovskite PV technology has the potential to outperform its monofacial counterparts with higher energy yields and lower levelized cost of energy (LCOE).
Abstract In hybrid perovskite solar cells (PSCs), the reaction of hydrogens (H) located in the amino group of the organic A-site cations with their neighboring halides plays a central role in degradation. Inspired by the retarded biological activities of cells in heavy water, we replaced the light H atom with its abundant, twice-as-heavy, nonradioactive isotope, deuterium (D) to hamper the motion of H. This D substitution retarded the formation kinetics of the detrimental H halides in Pb-based PSCs, as well as the H bond-mediated oxidation of Sn2+ in Sn–Pb-based narrow-bandgap PSCs, evidenced by accelerated stability studies. A computational study indicated that the zero point energy of D-based formamidinium (FA) is lower than that of pristine FA. In addition, the smaller increase in entropy in D-based FA than in pristine FA accounts for the increased formation free energy of the Sn2+ vacancies, which leads to the retarded oxidation kinetics of Sn2+. In this study, we show that substituting active H with D in organic cations is an effective way to enhance the stability of PSCs without sacrificing photovoltaic (PV) performance. This approach is also adaptable to other stabilizing methods.