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A Cesium frequency standard that was developed for satellite applications is discussed. It weighs 23 lbs. and uses 23.5 watts of power, achieves a stability of 1 x ten to the minus 13th power/100,000 seconds, and is radiation hardened. To achieve the weight and reliability requirements, both thick and thin film hybrid circuits were utilized. A crystal oscillator is used to improve short-term stability and performance on a moving platform.
Circuit extracts clock signal from random non-return-to-zero data stream, locking onto clock within one bit period at 1-gigabitper-second data rate. Circuit used for synchronization in opticalfiber communications. Derives speed from very short response time of gallium arsenide metal/semiconductor field-effect transistors (MESFET's).
The goal of this technology is to provide improved calibration and measurement sensitivity to the Soil Moisture Active Passive Mission (SMAP) radiometer. While RF switches have been used in the past to calibrate microwave radiometers, the switch used on SMAP employs several techniques uniquely tailored to the instrument requirements and passive remote-sensing in general to improve radiometer performance. Measurement error and sensitivity are improved by employing techniques to reduce thermal gradients within the device, reduce insertion loss during antenna observations, increase insertion loss temporal stability, and increase rejection of radar and RFI (radio-frequency interference) signals during calibration. The two legs of the single-pole double-throw reference switch employ three PIN diodes per leg in a parallel-shunt configuration to minimize insertion loss and increase stability while exceeding rejection requirements at 1,413 MHz. The high-speed packaged diodes are selected to minimize junction capacitance and resistance while ensuring the parallel devices have very similar I-V curves. Switch rejection is improved by adding high-impedance quarter-wave tapers before and after the diodes, along with replacing the ground via of one diode per leg with an open circuit stub. Errors due to thermal gradients in the switch are reduced by embedding the 50-ohm reference load within the switch, along with using a 0.25-in. (approximately equal to 0.6-cm) aluminum prebacked substrate. Previous spaceflight microwave radiometers did not embed the reference load and thermocouple directly within the calibration switch. In doing so, the SMAP switch reduces error caused by thermal gradients between the load and switch. Thermal issues are further reduced by moving the custom, highspeed regulated driver circuit to a physically separate PWB (printed wiring board). Regarding RF performance, previous spaceflight reference switches have not employed high-impedance tapers to improve rejection. The use of open-circuit stubs instead of a via to provide an improved RF short is unique to this design. The stubs are easily tunable to provide high rejection at specific frequencies while maintaining very low insertion loss in-band.
A d.c.-coupled transimpedance amplifier/pulse suppression circuit designed to remove charged-particle-induced noise from infrared detectors is described. Noise spikes produced by single particle events are large and have short rise times, and can degrade the performance of an infrared detector in moderate radiation environments. The use of the suppression circuit improves the signal-to-noise ratio by a factor of 1.6:1, which corresponds to a reduction in required observing time by a factor of about 2.6.
This oscillator uses a single-emitter 0.3- m InP heterojunction bipolar transistor (HBT) device with maximum frequency of oscillation (fmax) greater than 500 GHz. Due to high conductor and substrate losses at submillimeterwave frequencies, a primary challenge is to efficiently use the intrinsic device gain. This was done by using a suitable transmission-line media and circuit topology. The passive components of the oscillator are realized in a twometal process with benzocyclobutene (BCB) used as the primary transmission line dielectric. The circuit was designed using microstrip transmission lines. The oscillator is implemented in a common-base topology due to its inherent instability, and the design includes an on-chip resonator, outputmatching circuitry, and an injection-locking port, the port being used to demonstrate the injection-locking prin ciple. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Ad di tionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. The injection-locking reference signal is generated using a 2 20 GHz frequency synthesizer, followed by a doubler, active tripler, a W-band amplifier, and then a passive tripler. Therefore, the source frequency is multiplied 18 times to obtain a signal above 300 GHz that can be used to injection lock the oscillator. Measurement shows that injection locking has improved the phase noise of the oscillator and can be also used for synchronizing a series of oscillators. A signal conductor is implemented near the BCP -InP interface and the topside of the BCB layer is fully metallized as a signal ground. Because the fields are primarily constrained in the lower permittivity BCB region, this type of transmission line is referred to as an inverted microstrip. In addition, both common-emitter and commonbase circuits were investigated to determine optimum topology for oscillator design. The common -base topology required smaller amount of feedback than the common-emitter design, therefore preserving device gain, and was chosen for the oscillator design. The submillimeter-wave region offers several advantages for sensors and communication systems, such as high resolution and all-weather imaging due to the short-wavelength, and improved communication speeds by access to greater frequency bandwidth. This oscillator circuit is a prototype of the first HBT oscillator operating above 300 GHz. Additional development is necessary to increase the output power of the circuit for radar and imaging applications.
The figure shows a biasable subharmonic mixer designed to operate in the frequency range from 520 to 600 GHz. This mixer is a prototype of low-power mixers needed for development of wideband, high-resolution spectrometers for measuring spectra of molecules in the atmospheres of Earth, other planets, and comets in the frequency range of 400 to 700 GHz. Three considerations dictated the main features of the design: It is highly desirable to operate the spectrometers at or slightly below room temperature. This consideration is addressed by choosing Schottky diodes as the frequency-mixing circuit elements because of all mixer diodes, Schottky diodes are the best candidates for affording sufficient sensitivity at or slightly below room-temperature range. The short wavelengths in the intended operating-frequency range translate to stringent requirements for precision of fabrication and assembly of the circuits; these requirements are even more stringent for wide-bandwidth circuits. This consideration is addressed in two ways: (1) As much as possible of the mixer circuitry is fabricated in the form of a monolithic integrated circuit on a GaAs membrane, employing a modified version of a process used previously to fabricate a non-subharmonic mixer for a frequency of 2.5 THz and frequency multipliers for frequencies up to 2 THz. (2) The remainder of the circuitry is precision machined into a waveguide block that holds the GaAs integrated circuit.
Circuit, using a pulse transformer, enables a sensor to operate for a short portion of the duty cycle. Current drawn from the load is minimized and high impedance is reflected to the load.
The Applicative Programming System Architecture (APSA) combines an applicative language interpreter with a novel parallel computer architecture that is well suited for Very Large Scale Integration (VLSI) implementation. The Massively Parallel Processor (MPP) can simulate VLSI circuits by allocating one processing element in its square array to an area on a square VLSI chip. As long as there are not too many long data paths, the MPP can simulate a VLSI clock cycle very rapidly. The APSA circuit contains a binary tree with a few long paths and many short ones. A skewed H-tree layout allows every processing element to simulate a leaf cell and up to four tree nodes, with no loss in parallelism. Emulation of a key APSA algorithm on the MPP resulted in performance 16,000 times faster than a Vax. This speed will make it possible for the APSA language interpreter to run fast enough to support research in parallel list processing algorithms.
Planar submillimeter circuits are slowly replacing whisker-contacted devices at frequencies above 100 GHz, but in many cases the size constraints brought on by the short wavelengths associated with high frequency operation have not been adequeately addressed. Also, reproducibility becomes more important as we make the transition from tunable, whisker-based circuits to more monolithic designs. We are continuing to develop new circuites with more reproducible characteristics.
Abstract. Changes in modern integrated circuit (IC) technologies have modified the way we approach and conduct radiation tolerance and testing of electronics. These changes include scaling of geometries, new materials, new packaging technologies, and overall speed and device complexity challenges. In this short course section, we will identify and discuss these issues as they impact radiation testing, modeling, and effects mitigation of modern integrated circuits. The focus will be on CMOS-based technologies, however, other high performance technologies will be discussed where appropriate. The effects of concern will be: Single-Event Effects (SEE) and steady state total ionizing dose (TID) IC response. However, due to the growing use of opto-electronics in space systems issues concerning displacement damage testing will also be considered. This short course section is not intended to provide detailed "how-to-test" information, but simply provide a snapshot of current challenges and some of the approaches being considered.
An improved pulse stretching circuit comprising: a high speed wide-band amplifier connected in a fast charge integrator configuration; a holding circuit including a capacitor connected in parallel with a discharging network which employs a resistor and an FET; and an output buffer amplifier. Input pulses of very short duration are applied to the integrator charging the capacitor to a value proportional to the input pulse amplitude. After a predetermined period of time, conventional circuitry generates a dump pulse which is applied to the gate of the FET making a low resistance path to ground which discharges the capacitor. When the dump pulse terminates, the circuit is ready to accept another pulse to be stretched. The very short input pulses are thus stretched in width so that they may be analyzed by conventional pulse height analyzers.
The design details and rationale for a versatile, long-range, long-life telemetry data acquisition system for heart rates and body temperatures at multiple locations from free-ranging animals are presented. The design comprises an implantable transmitter for short to medium range transmission, a receiver retransmitter collar to be worn for long-range transmission, and a signal conditioner interface circuit to assist in signal discrimination and demodulation of receiver or tape-recorded audio outputs. Implanted electrodes are used to obtain an ECG, from which R-wave characteristics are selected to trigger a short RF pulse. Pulses carrying heart rate information are interrupted periodically by a series of pulse interval modulated RF pulses conveying temperature information sensed at desired locations by thermistors. Pulse duration and pulse sequencing are used to discriminate between heart rate and temperature pulses as well as radio frequency interference. The implanted transmitter may be used alone for medium and short-range tracking, or with a receiver-transmitter collar that employs commercial tracking equipment for transmissions of up to 12 km. A system prototype has been tested on a dog.
Spiral-like coil is printed with several extra turns which increase the realizable coil inductance. Included are shorting connections which not only short the extra turns, but also short out several turns of the main body. Coil tuning is accomplished by removing the shorts until the desired inductance is obtained.
Weekly and daily predictions of the ionospheric characteristics relevant to radio propagation are considered. A description of the techniques involved is given as well as examples showing how the prediction messages are prepared. The short term predictions are confined to restricted geographical areas and are relevant to radio circuits whose terminators are both located inside the same zone. They can be used with a reasonable approximation for circuits less than 3000 km of length whose reflection point lies within a given zone.
Six ampere hour individual pressure vessel nickel hydrogen cells were charge/discharge cycled to failure. Failure as used here is defined to occur when the end of discharge voltage degraded to 0.9 volts. They were cycled under a low earth orbit cycle regime to a deep depth of discharge (80 percent of rated ampere hour capacity). Both cell designs were fabricated by the same manufacturer and represent current state of the art. A failure model was advanced which suggests both cell designs have inadequate volume tolerance characteristics. The limited existing data base at a deep depth of discharge (DOD) was expanded. Two cells of each design were cycled. One COMSAT cell failed at cycle 1712 and the other failed at cycle 1875. For the Air Force/Hughes cells, one cell failed at cycle 2250 and the other failed at cycle 2638. All cells, of both designs, failed due to low end of discharge voltage (0.9 volts). No cell failed due to electrical shorts. After cell failure, three different reconditioning tests (deep discharge, physical reorientation, and open circuit voltage stand) were conducted on all cells of each design. A fourth reconditioning test (electrolyte addition) was conducted on one cell of each design. In addition post cycle cell teardown and failure analysis were performed on the one cell of each design which did not have electrolyte added after failure.
Six ampere hour individual pressure vessel nickel hydrogen cells were charge/discharge cycled to failure. Failure as used here is defined to occur when the end of discharge voltage degraded to 0.9 volts. They were cycled under a low earth orbit cycle regime to a deep depth of discharge (80 percent of rated ampere hour capacity). Both cell designs were fabricated by the same manufacturer and represent current state of the art. A failure model was advanced which suggests both cell designs have inadequate volume tolerance characteristics. The limited existing data base at a deep depth of discharge (DOD) was expanded. Two cells of each design were cycled. One COMSAT cell failed at cycle 1712 and the other failed at cycle 1875. For the Air Force/Hughes cells, one cell failed at cycle 2250 and the other failed at cycle 2638. All cells, of both designs, failed due to low end of discharge voltage (0.9 volts). No cell failed due to electrical shorts. After cell failure, three different reconditioning tests (deep discharge, physical reorientation, and open circuit voltage stand) were conducted on all cells of each design. A fourth reconditioning test (electrolyte addition) was conducted on one cell of each design. In addition post cycle cell teardown and failure analysis were performed on the one cell of each design which did not have electrolyte added after failure. Previously announced in STAR as N83-25038
Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.
Pulsed inductive plasma accelerators are spacecraft propulsion devices in which energy is stored in a capacitor and then discharged through an inductive coil. The device is electrodeless, inducing a current s heet in a plasma located near the face of the coil. The propellant is accelerated and expelled at a high exhaust velocity (order of 10 km/s) through the interaction of the plasma current and the induced magne tic field, The Faraday Accelerator with RF-Assisted Discharge (FARAD) thruster is a type of pulsed inductive plasma accelerator in which t he plasma is preionized by a mechanism separate from that used to for m the current sheet and accelerate the gas. Employing a separate preionization mechanism allows for the formation of an inductive current s heet at much lower discharge energies and voltages than those used in previous pulsed inductive accelerators like the Pulsed Inductive Thr uster (PIT). In this paper, we present the design of a benchtop FARAD thruster with all the subsystems (mass injection, preionization, and acceleration) integrated into a single unit. Design of the thruster follows the guidelines and similarity performance parameters presented elsewhere. The system is designed to use the ringing, RF-frequency s ignal produced by a discharging Vector Inversion Generator (VIG) to p reionize the gas. The acceleration stage operates on the order of 100 J/pulse and can be driven by several different pulsed powertrains. These include a simple capacitor coupled to the system, a Bernardes and Merryman configuration, and a pulsecompression circuit that takes a temporally broad, low current pulse and transforms it into a short, h igh current pulse. A set of applied magnetic field coils are integrated into the system to guide the preionized propellant as it spreads ov er the face of the inductive acceleration coil. The coils are operate d in a pulsed mode, and the thruster can be operated without using the coils to determine if there is a performance improvement gain realiz ed when an applied field is present.