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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Percolation mechanism through trapping/de-trapping process at defect states for resistive switching devices with structure of Ag/Si{sub x}C{sub 1−x}/p-Si

Pure Si{sub x}C{sub 1−x} (x > 0.5) and B-containing Si{sub x}C{sub 1−x} (x > 0.5) based resistive switching devices (RSD) with the structure of Ag/Si{sub x}C{sub 1−x}/p-Si were fabricated and their switching characteristics and mechanism were investigated systematically. Percolation mechanism through trapping/ de-trapping at defect states was suggested for the switching process. Through the introduction of B atoms into Si{sub x}C{sub 1−x}, the density of defect states was reduced, then, the SET and RESET voltages were also decreased. Based on the percolation theory, the dependence of SET/RESET voltage on the density of defect states was analyzed. These results supply a deep understanding for the SiC-based RSD, which have a potential application in extreme ambient conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Unipolar resistive switching behavior of amorphous YCrO{sub 3} films for nonvolatile memory applications

Amorphous YCrO{sub 3} (YCO) films were prepared on Pt/TiO{sub 2}/SiO{sub 2}/Si substrate by pulsed laser deposition in order to investigate resistive switching (RS) phenomenon. The Pt/YCO/Pt device showed stable unipolar RS with resistance ratio of ∼10{sup 5} between low and high resistance states, excellent endurance and retention characteristics, as well as, non-overlapping switching voltages with narrow dispersions. Based on the x-ray photoelectron spectroscopy and temperature dependent switching characteristics, observed RS was mainly ascribed to the oxygen vacancies. Moreover, current-voltage characteristics of the device in low and high resistance states were described by Ohmic and trap controlled space–charge limited conduction mechanisms, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Differential ultrafast all-optical switching of the resonances of a micropillar cavity

We perform frequency- and time-resolved all-optical switching of a GaAs-AlAs micropillar cavity using an ultrafast pump-probe setup. The switching is achieved by two-photon excitation of free carriers. We track the cavity resonances in time with a high frequency resolution. The pillar modes exhibit simultaneous frequency shifts, albeit with markedly different maximum switching amplitudes and relaxation dynamics. These differences stem from the non-uniformity of the free carrier density in the micropillar, and are well understood by taking into account the spatial distribution of injected free carriers, their spatial diffusion and surface recombination at micropillar sidewalls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhancement of Spin-transfer torque switching via resonant tunneling

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Spin orbital torque driven magnetization switching in magnetic tunnel junction with inter-layer exchange coupling

The switching processes of elliptically shaped magnetic tunnel junction bits with the structure Ta/CoFeB/MgO/CoFeB have been studied by the micromagnetic models. By comparing the tunneling magneto-resistance minor and major loops calculated by our model with related experimental results, we found that the inter-layer exchange coupling between the two CoFeB layers and a reduced saturation magnetization M{sub s} distribution at the edge of the elliptical bit should be included. The chosen strength of the inter-layer exchange coupling also matches well with experimental observations. The current induced magnetization switching is generated from the spin Hall effect in the Ta layer. The critical switching currents calculated by our model are coincident with experiment. This shows the reliability of our micromagnetic model with the spin orbital torque term.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Surface plasmon polariton assisted optical switching in noble bimetallic nanoparticle system

Photoresponse of bimetallic Au-Ag nanoparticle embedded soda glass (Au-Ag@SG) substrate is reported for surface plasmon assisted optical switching using 808 nm excitation. Au-Ag@SG system is made by an ion beam technique where Ag{sup +} is introduced first in the soda glass matrix by ion exchange technique. Subsequently, 400 keV Au{sup +} is implanted in the sample for different fluences, which is followed by an ion beam annealing process using 1 MeV Si{sup +} at a fixed fluence of 2 × 10{sup 16} ions·cm{sup −2}. Characteristic surface plasmon resonance (SPR) peaks around 400 and 550 nm provided evidence for the presence of Au and Ag nanoparticles. An optical switching in the Au-Ag@SG system with 808 nm, which is away from the characteristic SPR peaks of Ag and Au nanoparticles, suggests the possible role of two photon absorption (TPA) owing to the presence of interacting electric dipole in these systems. The role of surface plasmon polariton is emphasized for the propagation of electronic carrier belonging to the conduction electron of Au-Ag system in understanding the observed photoresponse. Unique excitation dependent photoresponse measurements confirm the possible role of TPA process. A competitive interband and intraband transitions in the bimetallic system of Au and Ag, which may be primarily responsible for the observation, are validated qualitatively using finite difference time domain calculations where inter-particle separation of Au and Ag plays an important role. Thus, a smart way of optical switching can be envisaged in noble bimetallic nanocluster system where long wavelength with higher skin depth can be used for communication purpose.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Simulation of electric-field and spin-transfer-torque induced magnetization switching in perpendicular magnetic tunnel junctions

Macrospin simulations are performed to model the magnetization switching driven by the combined action of electric-field and spin-polarized electric current (spin-transfer torque; STT) in MgO/CoFeB based magnetic tunnel junctions with interfacial perpendicular magnetic anisotropy. The results indicate that at low current case, the free layer magnetization shows a fast toggle-like switching, the final parallel or antiparallel magnetization state is determined by the electric-field effect, and the STT just helps or resists it to reach the final state depending on the current direction. However, with the increase of current strength, the contribution of STT effect gradually increases, which eventually achieves a deterministic magnetization switching state. Simulations further demonstrate that by appropriately tuning the parameters of applied electric-field and current the power consumption can be easily reduced by two orders of magnitude.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Switching of perpendicular exchange bias in Pt/Co/Pt/α-Cr{sub 2}O{sub 3}/Pt layered structure using magneto-electric effect

Switching of the perpendicular exchange bias polarity using a magneto-electric (ME) effect of α-Cr{sub 2}O{sub 3} was investigated. From the change in the exchange bias field with the electric field during the ME field cooling, i.e., the simultaneous application of both magnetic and electric fields during the cooling, we determined the threshold electric field to switch the perpendicular exchange bias polarity. It was found that the threshold electric field was inversely proportional to the magnetic field indicating that the EH product was constant. The high EH product was required to switch the exchange bias for the film possessing the high exchange anisotropy energy density, which suggests that the energy gain by the ME effect has to overcome the interfacial exchange coupling energy to reverse the interfacial antiferromagnetic spin.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Bianthrone at a metal surface: Conductance switching with a bistable molecule made feasible by image charge effects

Bianthrone is a sterically hindered compound that exists in the form of two non-planar isomers. Our experimental study of single-molecule junctions with bianthrone reveals persistent switching of electric conductance at low temperatures, which can be reasonably associated to molecular isomerization events. Temperature dependence of the switching rate allows for an estimate of the activation energy of the process, on the order of 35–90 meV. Quantum-chemical calculations of the potential surface of neutral bianthrone and its anion, including identification of transition states, yields the isolated molecule isomerization barriers too high vs. the previous estimate, though in perfect agreement with previous experimental studies in solution. Nevertheless, we show that the attraction of the anion in the vicinity of the metal surface by its image charge can significantly alter the energetic landscape, in particular, by reducing the barrier to the values compatible with the observed switching behavior.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Electromechanical magnetization switching

We show that the magnetization of a torsional oscillator that, in addition to the magnetic moment also possesses an electrical polarization, can be switched by the electric field that ignites mechanical oscillations at the frequency comparable to the frequency of the ferromagnetic resonance. The 180° switching arises from the spin-rotation coupling and is not prohibited by the different symmetry of the magnetic moment and the electric field as in the case of a stationary magnet. Analytical equations describing the system have been derived and investigated numerically. Phase diagrams showing the range of parameters required for the switching have been obtained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Reversible switching of ferromagnetism in ZnCuO nanorods by electric field

The reproducible switching of ferromagnetism in ZnCuO nanorods by applying a reversible electric field has been realized. High-resolution transmission electron microscopy images showed a hexagonal wurtzite structure with no detectable trace of secondary phase or precipitation of Cu impurity in the ZnCuO nanorods. The Cu concentrations in the ZnCuO nanorods were tested by energy dispersive spectroscopy and x-ray photoelectron spectroscopy and found to be about 2.7 at. %. The switching mechanism is confirmed in terms of the formation and rupture of conductive filaments, with oxygen vacancies (V{sub O}) localized mainly on surface of the ZnCuO nanorods. Subsequently, the variation of V{sub O} concentration during the resistive switching process modulates the ferromagnetism of the ZnCuO nanorods. The saturation magnetization at low resistance state is apparently 6.4 times larger than that at high resistance state for an Au/ZnCuO/ITO structure. An indirect double-exchange model has been used to explain the ferromagnetism in ZnCuO nanorods.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator

We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Resistive switching in a few nanometers thick tantalum oxide film formed by a metal oxidation

Resistive switching in a Cu/Ta{sub 2}O{sub 5}/Pt structure that consisted of a few nanometer-thick Ta{sub 2}O{sub 5} film was demonstrated. The Ta{sub 2}O{sub 5} film with thicknesses of 2–5 nm was formed with a combination of Ta metal film deposition and neutral oxygen particle irradiation at room temperature. The device exhibited a bipolar resistive switching with a threshold voltage of 0.2 V and multilevel switching operation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Study of the switching rate of gas-discharge devices based on the open discharge with counter-propagating electron beams

The switching rate of gas-discharge devices “kivotrons” based on the open discharge with counter-propagating electron beams has been experimentally studied. Structures with 2-cm{sup 2} overall cathode area were examined. The switching time was found to show a monotonic decrease with increasing the working-gas helium pressure and with increasing the voltage across the discharge gap at breakdown. The minimum switching time was found to be ∼240 ps at 17 kV voltage, and the maximum rate of electric-current rise limited by the discharge-circuit inductance was 3 × 10{sup 12 }A/s.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

The role of water in resistive switching in graphene oxide

The resistive switching processes are investigated at the nano-scale in graphene oxide. The modification of the material resistivity is driven by the electrical stimulation with the tip of atomic force microscope. The presence of water in the atmosphere surrounding graphene oxide is found to be a necessary condition for the occurrence of the switching effect. In consequence, the switching is related to an electrochemical reduction. Presented results suggest that by changing the humidity level the in-plane resolution of data storage process can be controlled. These findings are essential when discussing the concept of graphene based resistive random access memories.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Switching kinetics of SiC resistive memory for harsh environments

Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest R{sub OFF}/R{sub ON} ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and resistivity properties of the dielectric. The SET mechanism of the Cu/a-SiC/Au memory cells is found to be due to ionic motion without joule heating contributions, whereas the RESET mechanism is found to be due to thermally assisted ionic motion. The conductive filament diameter is extracted to be around 4nm. The high thermal conductivity and resistivity for the Cu/a-SiC/Au memory cells result in slow switching but with high thermal reliability and stability, showing potential for use in harsh environments. Radiation properties of SiC memory cells are investigated. No change was seen in DC sweep or pulsed switching nor in conductive mechanisms, up to 2Mrad(Si) using {sup 60}Co gamma irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Wigner phase space distribution via classical adiabatic switching

Evaluation of the Wigner phase space density for systems of many degrees of freedom presents an extremely demanding task because of the oscillatory nature of the Fourier-type integral. We propose a simple and efficient, approximate procedure for generating the Wigner distribution that avoids the computational difficulties associated with the Wigner transform. Starting from a suitable zeroth-order Hamiltonian, for which the Wigner density is available (either analytically or numerically), the phase space distribution is propagated in time via classical trajectories, while the perturbation is gradually switched on. According to the classical adiabatic theorem, each trajectory maintains a constant action if the perturbation is switched on infinitely slowly. We show that the adiabatic switching procedure produces the exact Wigner density for harmonic oscillator eigenstates and also for eigenstates of anharmonic Hamiltonians within the Wentzel-Kramers-Brillouin (WKB) approximation. We generalize the approach to finite temperature by introducing a density rescaling factor that depends on the energy of each trajectory. Time-dependent properties are obtained simply by continuing the integration of each trajectory under the full target Hamiltonian. Further, by construction, the generated approximate Wigner distribution is invariant under classical propagation, and thus, thermodynamic properties are strictly preserved. Numerical tests on one-dimensional and dissipative systems indicate that the method produces results in very good agreement with those obtained by full quantum mechanical methods over a wide temperature range. The method is simple and efficient, as it requires no input besides the force fields required for classical trajectory integration, and is ideal for use in quasiclassical trajectory calculations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time

An experimental determination is presented of the effect the quantum-well lifetime has on a large-signal resonant tunneling diode (RTD) switching time. Traditional vertical In{sub 0.53}Ga{sub 0.47}As/AlAs RTDs were grown, fabricated, and characterized. The switching time was measured with a high-speed oscilloscope and found to be close to the sum of the calculated RC-limited 10%–90% switching time and the quantum-well quasibound-state lifetime. This method displays experimental evidence that the two intrinsic resonant-tunneling characteristic times act independently, and that the quasibound-state lifetime then serves as a quantum-limit on the large-signal speed of RTDs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗