Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SILICONES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Silicon alloying enhances fast heating rate combustion of aluminum particles

Alloys and composites of aluminum (Al) have shown promise in regulating and enhancing particle combustion for energy generation applications. Recent work on aluminum-silicon (Al-Si) spherical alloy particles has shown improved combustion at low heating rates through enhanced diffusion accompanying a lower melting temperature. This study extends reactivity analysis to higher heating rates, comparing oxidation of Al-Si with Al. Flame speeds of Al-Si powder mixed with molybdenum trioxide (MoO 3 ) powder (Al-Si+MoO 3 ) exhibited a faster transition to steady propagation relative to Al+MoO 3 . Bomb calorimetry experiments revealed up to 5.8% greater early temperature rise for Al-Si powder. Rapid steady propagation for Al-Si mixture and faster temperature rise for Al-Si particles were attributed to accelerated kinetics evidenced in thermal equilibrium analysis of the mixtures using a differential scanning calorimeter (DSC). Larger DSC exotherms in the early stages of oxidation (i.e., 480–720 °C) correlated with early heat release and promoted steady flame propagation for Al-Si+MoO 3 compared with Al+MoO 3 . Furthermore, in multiple heating rate DSC studies, Al-Si+MoO 3 ignited at a lower heating rate (i.e., 15 ⁰C/min) than Al+MoO 3 (i.e., 20 ⁰C/min). Both mixtures ignited at temperatures less than 625 °C which is above the melting temperature of Al-Si (574 °C) and below Al (659 °C). Thus, alloy particle fuels with enhanced diffusion-controlled kinetics promote steady flame propagation and show promise for energy generation applications. This is especially promising for technologies driven by enhanced condensed phase combustion such as some propellant additives or applications dependent on reliable burn rates such as pyrotechnic time delay formulations and primers.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Dataset of simulated vibrational density of states and X-ray diffraction profiles of mechanically deformed and disordered atomic structures in Gold, Iron, Magnesium, and Silicon

This dataset is comprised of a library of atomistic structure files and corresponding X-ray diffraction (XRD) profiles and vibrational density of states (VDoS) profiles for bulk single crystal silicon (Si), gold (Au), magnesium (Mg), and iron (Fe) with and without disorder introduced into the atomic structure and with and without mechanical loading. Included with the atomistic structure files are descriptor files that measure the stress state, phase fractions, and dislocation content of the microstructures. All data was generated via molecular dynamics or molecular statics simulations using the Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) code. This dataset can inform the understanding of how local or global changes to a materials microstructure can alter their spectroscopic and diffraction behavior across a variety of initial structure types (cubic diamond, face-centered cubic (FCC), hexagonal close-packed (HCP), and body-centered cubic (BCC) for Si, Au, Mg, and Fe, respectively) and overlapping changes to the microstructure (i.e., both disorder insertion and mechanical loading).

96 KNOWLEDGE MANAGEMENT AND PRESERVATION↗
DOE OSTI2022

Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition

The unintentional impurity incorporation in GaN epitaxial layers impacts the electrical conductivity and optical properties of the films grown by metalorganic chemical vapor deposition (MOCVD). It is critical to control impurity-related states for device structure development. The aim of this work is to contribute to the understanding of the reasons for the presence of certain background impurities. In this paper, the unintentional impurity incorporation of carbon, hydrogen, oxygen, and silicon in undoped (u-) GaN films grown by low-pressure MOCVD were studied. Background impurity concentrations were evaluated by secondary ion mass spectroscopy (SIMS) to optimize growth parameters including V/III ratio, growth temperature (T g ), growth pressure (P g ), and gallium (Ga) precursors of trimethylgallium (TMG) or triethylgallium (TEG). Unintentional [C] and [Si] incorporations are found to be highly dependent on the growth parameters. Further, for the same growth conditions, u-GaN films grown with a TEG precursor exhibited a lower background concentration of C compared to that of GaN grown with TMG. However, the lowest background [C] achieved was grown with TMG using optimized conditions and exhibited [C]<4×10 15 cm -3 which was at the detection limit of the SIMS measurement. These results were measured for a u-GaN layer grown with TMG at 200 Torr, 1030°C, and a V/III of 3700. The lowest background [Si] of 4×10 15 cm -3 was achieved by growing with TMG at 200 Torr, 1000°C, and V/III of 650.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

The detrimental ratio ( ρ ): A critical metric complementing coulombic loss for long calendar-life silicon-based lithium-ion batteries

Silicon (Si) is a promising high-capacity anode in lithium-ion batteries but suffers from chronic chemical degradation and capacity fading during calendar aging, greatly hindering its automobile applications. Electrolyte engineering currently relies on conventional evaluation criteria of reducing coulombic consumption, which implicitly presume its equivalence to irreversible capacity loss and complicates battery development. Here, we introduce the detrimental ratio p to quantify the fraction of parasitic species that permanently degrades active material. This metric is independent and crucially complements total coulombic consumption for accurate performance evaluation. We systematically investigate multiple electrolyte formulations using high-precision leakage current measurements, open-circuit-voltage experiments, and post-mortem characterizations. Although some electrolytes exhibit similarly low coulombic consumption, they diverge significantly incapacity retention and p. Especially, dimethyl-carbonate-based localized-high concentration electrolyte can synergically achieve low coulombic consumption and detrimental ratio p during calendar aging, owing to its chemically inert and structurally resilient solidelectrolyte interface with minimal isolated Si material. By contrast, increasing fluoroethylene carbonate (FEC) additive content suppresses electrolyte breakdown but suffers aggravated chemical degradation of more LixSi isolation for irreversible capacity loss with arising p. This study critically reveals that the chemistry-characteristic detrimental ratio p establishes physically informed performance evaluation to pave the way for accelerating battery development.

Calendar aging↗
DOE OSTI2025

Laser-induced slip casting as an additive manufacturing approach for silicon carbide

Here, this work presents processing silicon carbide (SiC) with the laser-induced slip casting (LIS) additive manufacturing (AM). SiC was stabilized in water with polyethyleneimine (PEI) dispersant, and SiC slurries were made with rheology for LIS printing. High-density ceramic parts were printed, followed by single-step binder burnout and sintering. The printed parts achieved 93–95 % of theoretical density. X-ray computed tomography (XCT) revealed a small distribution of flaws exceeding 100 microns. The mechanical properties were measured in both parallel and perpendicular to the printing layers, and the orientation with layers perpendicular to the bending moment resulted in higher strength compared to the parallel direction. Porosity resulting from processing and large inclusions of boron carbide (B4C) were the root cause of failure in the measured samples. Despite these defects through this effort, this new approach demonstrates promise for green forming of SiC with densities greater than 95 % theoretical and tensile strengths above 250 MPa.

Additive Manufacturing↗
DOE OSTI2020

Microstructural evolution of a silicon carbide-carbon coated nanostructured ferritic alloy composite during in-situ Kr ion irradiation at 300°C 450°C

This work focuses on irradiation behaviors of a novel silicon carbide and carbon coated nanostructured ferritic alloy (SiC-C@NFA) composite for potential applications as a cladding and structural material for next generation nuclear reactors. The SiC-C@NFA samples were irradiated with 1 MeV Kr ions up to 10 dpa at 300 and 450 °C. Microstructures and defect evolution were studied in-situ at the IVEM-Tandem facility at Argonne National Laboratory. The effects of ion irradiation on various phases such as α-ferrite matrix, (Fe,Cr) 7 C 3 , and (Ti,W)C precipitates were evaluated. The α-ferrite matrix showed a continuous increase in dislocation density along with spatial ordering of dislocation loops (or loop strings) at >5 dpa. The size of the dislocation loops at 450 °C was larger than that at 300 °C. The nucleation and growth of new (Ti,W)C precipitates in α-ferrite grains were enhanced with the ion dose at 450 °C. This study provides new insight into the irradiation resistance of the SiC-C@NFA system.

(FeCr)(7)C-3↗
DOE OSTI2020

Design and strategy for next-generation silicon carbide composites for nuclear energy

Silicon carbide (SiC) ceramic-based composites continue to be attractive material options for fusion in-vessel components and fission reactor core structures because of their exceptional high-temperature capability and favorable neutronic properties. As performance data accumulates, the limitations of the current generation of nuclear-grade SiC composites are becoming more apparent. These limitations mainly involve strength degradation during high-dose neutron irradiation. In this paper, we discuss several options for improving the performance of the next generation of SiC composites to enhance the radiation resistance, along with new experimental results on neutron irradiation resistance. The main emphasis is on the selection of the fibers and the design and development of alternative interphase layers for advanced composites.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Properties and microstructure evolution of silicon nitride and zirconium nitride following Ni ion irradiation

We report that silicon nitride and zirconium nitride have been proposed as potential materials for multiple nuclear applications (inert matrix fuels, accident tolerant fuels, space nuclear power, fusion reactor design), yet knowledge on their behavior under irradiation remains limited. Ion irradiations were performed using 15 MeV Ni 5+ ions on Si 3 N 4 and ZrN samples, with midrange doses (around 3 µm) from 1 to 50 dpa and temperatures from 300 to 700°C. Volumetric lattice swelling was determined by grazing incidence X-ray diffraction, defect production and evolution were tracked using Transmission Electron Microscopy, and nanoindentation was performed to quantify the ceramics’ mechanical properties evolution. The results from these irradiation studies on nitride ceramics help fill the current gap present in the literature. Behavior consistent with past work on irradiated Si 3 N 4 was observed with respect to mechanical properties and defect formation up to 15 dpa and 500°C. Failure of the grain boundary sintering aid in Si 3 N 4 was observed above these conditions. Different behavior was observed in both nitrides at 50 dpa and 700°C, where lattice swelling increased past potential saturation values. Unreported cavity formation was witnessed in both materials under all irradiation conditions, with stable number density and slight size increase above 15 dpa. The mechanism for the cavity formation remains to be determined.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Mechanistic calculation of the effective silver diffusion coefficient in polycrystalline silicon carbide: Application to silver release in AGR-1 TRISO particles

The silicon carbide (SiC) layer in tristructural isotropic (TRISO) fuel particles serves as a barrier to prevent the escape of fission products produced and not retained in the fuel kernel. The release of silver (Ag) is a concern due to the long half-life of the 110m Ag isotope. However, accurately determining the fission gas release rate requires knowing the diffusion coefficient through the SiC layer. In this study, we leverage atomistic calculations of Ag diffusivity in SiC bulk and grain boundaries (GBs) to develop a mesoscale effective Ag diffusion coefficient (D eff ) in SiC. Since GBs serve as pathways for Ag diffusion, D eff is defined as a function of temperature and microstructure variables. In particular, the size of SiC grains in the direction perpendicular to diffusion is shown to significantly affect Ag diffusion. The prediction of the mechanistic, mesoscale approach falls within one order of magnitude of empirical values. The temperature and microstructure-dependent effective Ag diffusivity in SiC is implemented in the fuel performance code Bison with a correction factor to predict Ag release from AGR-1 TRISO fuel particles. We hereby quantify the impact of SiC grain size on Ag release and improve Bison’s predictions.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Assessment of the grindability of robocast silicon carbide

The demand for high-performance lightweight optics has driven interest in silicon carbide (SiC) due to its exceptional thermal stability, hardness, and strength-to-weight ratio. This study investigates the potential of robocasting, an additive manufacturing process, as a viable method for producing lightweighted SiC components for optical applications. Four samples with varied starting powder phases (α and β) and sintering conditions were fabricated and evaluated. Post-sintering surface and form were assessed using coherence scanning interferometry (CSI) and coordinate measuring machine (CMM) techniques. A three-stage grinding process was applied to each sample, with surface roughness assessed at each stage. Results demonstrate that samples with predominantly α-phase SiC and smaller particle sizes achieved superior surface finish, particularly sample D2-α-2135 °C, which displayed the lowest post-grinding Sq value of 0.178 µm. The analysis also indicated no significant print-through effect from the lightweighting structure, or print artifacts, at this stage of grinding. However, β-phase samples showed poorer grindability, increased surface roughness, and pitting. These findings suggest that phase composition and particle size are critical for achieving the desired surface quality in robocast SiC optics. Future work will incorporate additional samples and finer grinding wheels to refine surface quality further, supporting the development of SiC for high-precision optical applications.

Barrett, Taylor [ORNL]↗
DOE OSTI2021

Facile microwave synthesis of zirconium metal-organic framework thin films on gold and silicon and application to sensor functionalization

Zirconium-based metal-organic frameworks, including UiO-66 and related frameworks, have become the focus of considerable research in the area of chemical warfare agent (CWA) decontamination. However, little work has been reported exploring these metal-organic frameworks (MOFs) for CWA sensing applications. For many sensing approaches, the growth of high-quality thin films of the active material is required, and thin film growth methods must be compatible with complex device architectures. Several approaches to synthesize thin films of UiO-66 have been described but many of these existing methods are complex or time consuming. In this work, we describe the development of a simple and rapid microwave assisted synthesis of oriented UiO-66 thin films on unmodified silicon (Si) and gold (Au) substrates. Thin films of UiO-66 and UiO-66-NH 2 can be grown in as little as 2 min on gold substrates and 30 min on Si substrates. The film morphology and orientation are characterized and the effects of reaction time and temperature on thin film growth on Au are investigated. Both reaction time and temperature impact the overgrowth of protruding discrete crystallites in the thin film layer but, surprisingly, no strong correlation is observed between film thickness and reaction time or temperature. We also briefly describe the synthesis of Zr/Ce solid solution thin films of UiO-66 on Au and report the first synthesis of a solid solution thin film MOF. Finally, we demonstrate the utility of the microwave method for the facile functionalization of two sensor architectures, plasmonic nanohole arrays and microresonators, with UiO-66 thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Compositionally graded aluminum-silicon alloy fabricated via friction extrusion

Herein, a novel solid-phase gradient alloying technique was developed for a high throughput composition-microstructure-mechanical property assessment. Friction extrusion of a two-piece billet setup facilitated the formation of a seamless compositionally graded aluminum (Al)-silicon (Si) extrudate rod, with Si concentration in Al matrix gradually increasing from ~1 at% at one end to ~7 at% at the other end of the rod. We observed a strong dependence of the Al grain size, morphology, and texture on the Si concentration. The Si particles pinned the recrystallized grain boundaries resulting in refined (< 10 µm) and textured grains in the high Si content region, while the Al grains in the low Si region are equiaxed, randomly textured, and with a larger average size (~50 µm). The hardness of Al-Si gradient extrudate increases by ~50% percent with a 6 at% increase in Si content due to Hall Petch and particle strengthening effects. Our approach demonstrates the use of a solid phase processing technique to successfully produce a defect-free continuously compositionally graded bulk components thus overcoming the limitations of porosity and material heterogeneities commonly observed in other techniques such as by additive laser deposition.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Design and performance of a silicon–tungsten calorimeter prototype module and the associated readout

Here, we describe the details of a silicon–tungsten prototype electromagnetic calorimeter module and associated readout electronics. Detector performance for this prototype has been measured in test beam experiments at the CERN PS and SPS accelerator facilities in 2015/16. The results are compared to those in Monte Carlo Geant4 simulations. This is the first real-world demonstration of the performance of a custom ASIC designed for fast, lower-power, high-granularity applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Strategies and performance of the CMS silicon tracker alignment during LHC Run 2

The strategies for and the performance of the CMS silicon tracking system alignment during the 2015-2018 data-taking period of the LHC are described. The alignment procedures during and after data taking are explained. Alignment scenarios are also derived for use in the simulation of the detector response. Systematic effects, related to intrinsic symmetries of the alignment task or to external constraints, are discussed and illustrated for different scenarios.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

The FABLE silicon detector array for comprehensive studies of fusion and breakup dynamics

The Fusion and Breakup of Light Elements (FABLE) array, comprised of ΔE-E telescopes of neutron-transmutation doped (NTD) Double-Sided Silicon Strip Detectors (DSSDs), has been developed and commissioned for future experiments at the Facility for Rare Isotope Beams (FRIB). FABLE was designed to perform measurements of complete and incomplete fusion cross sections, to help address the interplay between breakup and clustering in outcomes of reactions with exotic nuclides. Here, the FABLE array has been commissioned in a comprehensive study at the ReAccelerator facility ReA6 of the Facility for Rare Isotope Beams (FRIB), investigating the dynamics in the weakly-bound proton rich 7 Be reaction on 208 Pb targets.

Breakup↗
DOE OSTI2025

Temperature-dependent calibration procedures for the silicon photomultiplier readout of the cosmic ray veto detector for the Mu2e experiment

The cosmic ray veto detector for the Mu2e experiment consists of scintillation bars embedded with wavelength-shifting fibers and read out by silicon photomultipliers (SiPMs). Here, in this manuscript, the calibration procedures of the SiPMs are described including corrections for the temperature dependence of their light yield. These corrections are needed as the SiPMs are not kept at a constant temperature due to the complexity and cost of implementing a cooling system on such a large detector. Rather, it was decided to monitor the temperature to allow the appropriate corrections to be made. The SiPM temperature dependence has been measured in a dedicated experiment and the calibration procedures were validated with data from production detectors awaiting installation at Fermilab.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

10 Be at iThemba LABS using a silicon nitride membrane stack as absorber for isobar suppression

10 Be is an important isotope for accelerator mass spectrometry (AMS) because of the demand for cosmogenic radionuclide dating methods in the earth science and paleo-sciences community. At the iThemba Laboratory for Accelerator Based Science (iThemba LABS) we implemented full suppression of the interfering isobar 10 B using a silicon nitride foil-stack, utilizing the 2+ charge state for high efficiency. We demonstrate the performance of this newly established AMS system using standards and test samples. Here we further present the results of an inter-comparison between iThemba LABS and the Center for Accelerator Mass Spectrometry/Lawrence Livermore National Laboratory, on AMS samples prepared from purified quartz at the University of Vermont. The results for 10 Be from the laboratories are in close agreement, fully consistent with cross-calibration between them. AMS results for 26 Al are in similarly good agreement, demonstrating the performance and accuracy of iThemba LABS for the most commonly measured in situ produced cosmogenic nuclides.

10-Be↗
DOE OSTI2025

Thickness and uniformity mapping of thin foils using resistive silicon detectors

Alpha energy loss is a common tool used for measuring target thicknesses. However, these measurements are often made without position information, which either forfeits knowledge of material uniformity and local thickness or requires a prohibitive number of measurements per target to partially recover this information. In consideration of this, a method for measuring position-dependent thicknesses is described in this work; by using the position-sensitivity of the dual-axis duo-lateral (DADL) silicon detector, thicknesses across the entire face of the material can be measured to sub-mm precision with a single measurement. Several examples are presented using a number of targets with varying characteristics, which altogether demonstrate the precision, accuracy, and versatility of this technique.

Foil uniformity↗