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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Crack Growth in Single-Crystal Silicon

Report describes experiments on crack growth in single-crystal silicon at room temperature in air. Crack growth in (111) cleavage plane of wafers, 50 by 100 by 0.76 mm in dimension, cut from Czochralski singlecrystal silicon studied by double-torsion load-relaxation method and by acoustic-emission measurements. Scanning electron microscopy and X-ray topography also employed. Results aid in design and fabrication of silicon photovoltaic and microelectronic devices.

Chen, C. P.↗
NASA NTRS1986

Faster Edge-Define Silicon-Ribbon Growth

End-cooling allows faster growth and yields single-crystal ribbons. Improvement in edge-defined film-fed process for growing silicon ribbons increases speed of growth and improves quality of silicon product. Also produces silicon sheets, webs, or boules. Cold shoes cool melt at ends of emerging sheet. Since solidification at ends now occurs before end menisci reach maximum height, ribbon drawn substantially faster.

Richter, R.↗
NASA NTRS1986

Increasing the Deposition Rate of Silicon

Modified Siemens reactor enables chemical vapor deposition (CVD) of silicon to occur simultaneously on inner and outer surfaces of hollow cylinder, resulting in increase in mass of silicon deposited per unit time. Outer reactor for silicon deposition made from quartz or stainless steel. Hollow cylinder either single resistance-heated hollow cylinder about 5 to 10 cm or greater in diameter or 1-cm-diameter rods aligned in circular channels at top and bottom, initial circles being 5 to 10 cm in diameter or greater.

Lutwack, R.↗
NASA NTRS1985

Detection of [SiLL] (34.8 micron) emission in Orion-KL: A measurement of the silicon abundance in dense interstellar gas

The first detection of the ground state fine structure transition of Si+ at a rest wavelength determined to be 34.815 + or - 0.004 micron are reported. These observations were obtained with the facility spectrometer on NASA's Kuiper Airborne Observatory. A 6' NW-SE strip scan across the Orion-KL region shows SiII emission from both the extended photodissociation region surrounding theta 1 Ori C and from the shocked gas NW of BN-KL. The inferred gas-phase silicon elemental abundance relative to hydrogen in the dense 10 to the 5/cc primarily neutral photodissociation region is approximately 2.6 x to the -6, a factor of 0.075 times the solar value and 3.4 times greater than the abundance in the moderate density approx. 10 to the 3/cc cloud toward zeta Oph. The silicon abundance in the shocked gas is approximately solar, indicating that any pre-existing grains have been destroyed in the shock wave or that the preshock gas carries a near solar abundance of gas phase silicon. The shock-excited SiII (34.8 micron) emission may arise from shocked wind material in the outflow around IRc2, with wind velocities approx. 100 km/s.

Haas, M. R.↗
NASA NTRS1985

Burst annealing of electron damage in silicon solar cells

A study has been performed of burst annealing of electron damage in silicon solar cells. Three groups of cells consisting of 3 and 0.3 ohm-cm silicon were exposed to fluences of 2 x 10 to the 14th power, 4 x 10 to the 14th power, and 8 x 10 to the 14th power 1-MeV electrons/sq cm, respectively. They were subsequently subjected to 1-minute bursts of annealing at 500 C. The 3 ohm-cm cells showed complete recovery from each fluence level. The 0.3 ohm-cm cells showed complete recovery from the 2 x 10 to the 14th power e/sq cm fluence; however, some of the 0.3 ohm-cm cells did not recover completely from the higher influences. From an analysis of the results it is concluded that burst annealing of moderate to high resistivity silicon cell arrays in space is feasible and that with more complete understanding, even the potentially higher efficiency low resistivity cells may be usable in annealable arrays in space.

Day, A. C.↗
NASA NTRS1985

MCZ: Striations in CZ silicon crystals grown under various axial magnetic field strengths

Suppression of fluid flow instabilities in the melt by the axial magnetic field in Czochralski silicon crystal growth (AMCZ) is investigated precisely by a high-sensitivity striation etching in conjunction with temperature measurements. The magnetic strength (B) was varied up to 4.0 kG, incremented in 0.5 kG/5 cm crystal length. The convection flow was substantially suppressed at B 1.0 kG. A low oxygen level of 2-3 ppma and a high resistivity of 400 ohm-cm is achieved in the AMCZ silicon crystals at B 1.0 kG. Details of the striation formation as a function of B are presented. Computer simulation of the magnetohydrodynamics of the AMCZ silicon crystal growth are discussed briefly with regard to the solute, especially oxygen segregation at B=0, 1.0, and 2.0 kG. Earlier studies in the inverted Bridgman growth of InSb and Ge, which have established the cause and effect relationship between the convection in the melt and the striation formation as well as the suppression of the convections in the melt by transverse magnetic field are reviewed.

Kim, G. K. M.↗
NASA NTRS1986

Refining of metallurgical-grade silicon

A basic requirement of large scale solar cell fabrication is to provide low cost base material. Unconventional refining of metallurical grade silicon represents one of the most promising ways of silicon meltstock processing. The refining concept is based on an optimized combination of metallurgical treatments. Commercially available crude silicon, in this sequence, requires a first pyrometallurgical step by slagging, or, alternatively, solvent extraction by aluminum. After grinding and leaching, high purity qualtiy is gained as an advanced stage of refinement. To reach solar grade quality a final pyrometallurgical step is needed: liquid-gas extraction.

Dietl, J.↗
NASA NTRS1986

Solar-grade silicon prepared by carbothermic reduction of silica

An advanced carbothermic reduction (ACR) process was developed to produce solar grade (SC) silicon from high purity silica and carbon. Preparation of starting materials and operation of the arc furnace to product high purity silicon is described. Solar cells prepared from single crystal SG-Si had efficiencies of up to 12.3% practically identical to cells made from electronic grade silicon. The ACR process is not in the pilot stage for further evaluation.

Aulich, H. A.↗
NASA NTRS1985

High-efficiency silicon solar cells

Fabrication and characterization of high-efficiency metal insulator, n-p (MINP) cells is described. Particular attention was paid to development of measurement methods for surface recombination and density of surface states. A modified Rosier test structure was used successfully for density of surface states. Silicon oxide and silicon nitride passivants were studied. Heat treatment after plasma enhanced chemical vapor deposition (CVD) of silicon nitride was shown to be beneficial. A more optimum emitter concentration profile was modeled.

Olsen, L. C.↗
NASA NTRS1985

Growth of the 889 per cm infrared band in annealed electron-irradiated silicon

Isothermal annealing of electron-irradiated Czochralski silicon has been studied at four different temperatures ranging from 304 to 350 C using infrared spectroscopy. At annealing temperatures above 300 C the irradiation-induced band at 830 per cm, usually attributed to a vacancy-oxygen complex (the A center), disappears and a new band at 889 per cm grows up. Within the experimental accuracy, the activation energy for the growth of this band is found to be identical with the value given by Stavola et al. for 'anomalous' oxygen diffusion in silicon. Also the frequency factors for the two processes are in reasonable agreement. The results show that a vacancy-assisted process may provide an explanation for enhanced motion of oxygen in silicon.

Svensson, B. G.↗
NASA NTRS1986

Detection of (Si II) (34.8 micron) emission in Orion-KL - A measurement of the silicon abundance in dense interstellar gas

The first detection of the ground state fine structure transition of Si+ at a rest wavelength determined to be 34.815 + or - 0.004 micron are reported. These observations were obtained with the facility spectrometer on NASA's Kuiper Airborne Observatory. A 6' NW-SE strip scan across the Orion-KL region shows Si II emission from both the extended photodissociation region surrounding theta 1 Ori C and from the shocked gas NW of BN-KL. The inferred gas-phase silicon elemental abundance relative to hydrogen in the dense 10 to the 5/cc primarily neutral photodissociation region is approximately 2.6 x 10 the -6, a factor of 0.075 times the solar value and 3.4 times greater than the abundance in the moderate density aprox. 10 to the 3/cc cloud toward Zeta Oph The silicon abundance in the shocked gas is approximately solar, indicating that any pre-existing grains have been destroyed in the shock wave or that the preshock gas carries a near solar abundance of gas phase silicon. The shock-excited Si II (34.8 micron) emission may arise from shocked wind material in the outflow around IRc2, with wind velocities approx. 100 km/s.

Haas, M. R.↗
NASA NTRS1987

Fast-Response Heating of Silicon Melts

Proposed improvement for silicon crystal growing enables rapid heating of melt in vicinity of liquid-solid interface to compensate for decreases in melt temperature, to ensure uniform diameter and composition in ingot. Intended for growing large silicon ingots by Czochralski process, cylindrical single-crystal ingot pulled from molten silicon. Heating confined to small mass near growing crystal.

Morrison, A. D.↗
NASA NTRS1987

Fluidized-Bed Cleaning of Silicon Particles

Fluidized-bed chemical cleaning process developed to remove metallic impurities from small silicon particles. Particles (250 micrometer in size) utilized as seed material in silane pyrolysis process for production of 1-mm-size silicon. Product silicon (1 mm in size) used as raw material for fabrication of solar cells and other semiconductor devices. Principal cleaning step is wash in mixture of hydrochloric and nitric acids, leaching out metals and carrying them away as soluble chlorides. Particles fluidized by cleaning solution to assure good mixing and uniform wetting.

Rohatgi, Naresh K.↗
NASA NTRS1987

Numerical Simulation Of Silicon-Ribbon Growth

Mathematical model includes nonlinear effects. In development simulates growth of silicon ribbon from melt. Takes account of entire temperature and stress history of ribbon. Numerical simulations performed with new model helps in search for temperature distribution, pulling speed, and other conditions favoring growth of wide, flat, relatively defect-free silicon ribbons for solar photovoltaic cells at economically attractive, high production rates. Also applicable to materials other than silicon.

Woda, Ben K.↗
NASA NTRS1985

Heavy doping effects in high efficiency silicon solar cells

The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.

Lindholm, F. A.↗
NASA NTRS1986

High-purity silicon crystal growth investigations

Information is given on evaporation and segregation contributions to impurity profiles of floating zone crystals (FZ); high-purity silicon float zoning (FZ); minority-carrier lifetime measurement of heavily doped silicon crystals; the effect of some crystal growth parameters on minority-carrier lifetime; and defect investigations by X-ray topography in graphical and tabular form. It was concluded that evaporation contributes substantially to impurity reduction when FZ or cold-crucible growth is conducted in a vacuum; boron and gallium may be more favorable dopants than indium or aluminum for obtaining high minority-carrier lifetimes; minority-carrier lifetimes greater than 100 microseconds are feasible at a 2 times 10 to the 17th power cm-3 doping level; minority-carrier lifetime decreases with increasing crystal cooling rate and also with the presence of dislocations; the method used to clean silicon feed rods affects lifetime; and microdefect densities in dislocation-free FZ crystals appear to be lower with Ga doping than with B doping.

Ciszek, T. F.↗
NASA NTRS1986

Measurement of minority carrier lifetime, mobility and diffusion length in heavily doped silicon

Carrier transport and recombination parameters in heavily doped silicon were examined. Data were presented for carrier diffusivity in both p- and n-type heavily doped silicon covering a broad range of doping concentrations from 10 to the 15th power to 10 to the 20th power atoms/cu cm. One of the highlights of the results showed that minority carrier diffusivities are higher by a factor of 2 in silicon compared to majority carrier diffusivities.

Swirhun, S. E.↗
NASA NTRS1986

High band gap 2-6 and 3-5 tunneling junctions for silicon multijunction solar cells

A multijunction silicon solar cell of high efficiency is provided by providing a tunnel junction between the solar cell junctions to connect them in series. The tunnel junction is comprised of p+ and n+ layers of high band gap 3-5 or 2-6 semiconductor materials that match the lattice structure of silicon, such as GaP (band gap 2.24 eV) or ZnS (band gap 3.6 eV). Each of which has a perfect lattice match with silicon to avoid defects normally associated with lattice mismatch.

Daud, Taher↗