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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Oxidation of silicon with a 5 eV O(-) beam

A silicon wafer has been oxidized at room temperature in vacuum using a pure, ground-state beam of O(-) ions. The beam was of sufficiently low energy that no displacement damage or implantation was energetically possible. The resulting SiO2 films were analyzed with X-ray photoelectron spectroscopy. A logarithmic dependence of oxide thickness on dose was observed, with an extrapolated oxidation efficiency of unity for the clean silicon surface. A distinct initial oxidation phase was observed, with an anomalously high level of silicon suboxides. In addition, the valence-band offset between the silicon and the oxide was unusually small, suggesting a large interfacial dipole.

Hecht, M. H.↗
NASA NTRS1990

Silicon chemistry in interstellar clouds

A new model of interstellar silicon chemistry is presented that explains the lack of SiO detections in cold clouds and contains an exponential temperature dependence for the SiO abundance. A key aspect of the model is the sensitivity of SiO production by neutral silicon reactions to density and temperature, which arises from the dependence of the rate coefficients on the population of the excited fine-structure levels of the silicon atom. As part of the explanation of the lack of SiO detections at low temperatures and densities, the model also emphasizes the small efficiencies of the production routes and the correspondingly long times needed to reach equilibrium. Measurements of the abundance of SiO, in conjunction with theory, can provide information on the physical properties of interstellar clouds such as the abundance of oxygen bearing molecules and the depletion of interstellar silicon.

Langer, William D.↗
NASA NTRS1992

Atomic oxygen interactions with FEP Teflon and silicones on LDEF

The Long Duration Exposure Facility (LDEF) spacecraft has enabled the measurement of the effects of fixed orientation exposure of high fluence atomic oxygen on fluorinated ethylene propylene (FEP Teflon) and silicones. The atomic oxygen erosion yield for the FEP Teflon was found to be 3.64 x 10(exp -25) cm(exp 3)/atom. This erosion yield is significantly higher than that measured from previous low fluence orbital data. The FEP Teflon erosion yield was found to have the same dependence on oxygen arrival angle as Kapton and Mylar. Atomic oxygen interaction with silicon polymers results in the crazing of silicon. Released silicone contaminants were found to darken upon further atomic oxygen exposure.

Bruce A. Banks↗
NASA NTRS1992

Thermal degradation study of silicon carbide threads developed for advanced flexible thermal protection systems

Silicon carbide (SiC) fiber is a material that may be used in advanced thermal protection systems (TPS) for future aerospace vehicles. SiC fiber's mechanical properties depend greatly on the presence or absence of sizing and its microstructure. In this research, silicon dioxide is found to be present on the surface of the fiber. Electron Spectroscopy for Chemical Analysis (ESCA) and Scanning Electron Microscopy (SEM) show that a thin oxide layer (SiO2) exists on the as-received fibers, and the oxide thickness increases when the fibers are exposed to high temperature. ESCA also reveals no evidence of Si-C bonding on the fiber surface on both as-received and heat treated fibers. The silicon oxide layer is thought to signal the decomposition of SiC bonds and may be partially responsible for the degradation in the breaking strength observed at temperatures above 400 C. The variation in electrical resistivity of the fibers with increasing temperature indicates a transition to a higher band gap material at 350 to 600 C. This is consistent with a decomposition of SiC involving silicon oxide formation.

Tran, Huy Kim↗
NASA NTRS1992

Silicon abundances in population I giants

Silicon to carbon abundance ratios for population I giants were determined from emission lines originating in the transition layers between stellar chromospheres and coronae. For effective temperatures larger than 6200 K we find a group of stars with increased silicon to carbon but normal nitrogen to carbon abundance ratios. These stars are presumably descendents from Ap stars with increased surface silicon to carbon abundance ratios. For G stars this anomaly disappears as is to be expected due to the increased depth of the convection zone and therefore deeper mixing which dilutes the surface overabundances. The disappearance of the abundance anomalies proves that the anomalous abundances observed for the F giants are indeed only a surface phenomenon. It also proves that the same holds for their progenitors, the Ap and Am stars, as has been generally believed. Unexplained is the increased silicon to carbon abundance ratio observed for several stars cooler than 5100 L. RS CVn and related stars do not show this increased abundance ratio. There are also some giants which appear to be enriched in carbon, perhaps due to a helium flash with some mixing if the star is a clump star.

Boehm-Vitense, Erika↗
NASA NTRS1992

Sources and transport of silicone NVR

The retrieved LDEF had varying amounts of visible contamination films (brown stains) at many locations. FTIR spectra of heavy film deposits at vents and of optical windows from tray E5 indicated methyl silicone and silica in the contaminant films. Two possible sources of the methyl silicone are DC-710 phenyl methyl silicone in the shuttle-bay-liner beta cloth, and the shuttle tile waterproofing silane. It is concluded that much of the silicon and silica contamination came from ground operations and the orbiter.

Harvey, Gale A.↗
NASA NTRS1990

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Work done during the final report period is presented. The main technical objective was to achieve epitaxial growth on silicon of two semiconducting silicides, ReSi2 and CrSi2. ReSi2 thin films were grown on (001) silicon wafers by vacuum evaporation of rhenium onto hot substrates in ultrahigh vacuum. The preferred epitaxial relationship was found to be ReSi2(100)/Si(001) with ReSi2(010) parallel to Si(110). The lattice matching consists of a common unit mesh of 120 A(sup 2) area, and a mismatch of 1.8 percent. Transmission electron microscopy revealed the existence of rotation twins corresponding to two distinct but equivalent azimuthal orientations of the common unit mesh. MeV He(+) backscattering spectrometry revealed a minimum channeling yield of 2 percent for an approximately 1,500 A thick film grown at 650 C. Although the lateral dimension of the twins is on the order of 100 A, there is a very high degree of alignment between the ReSi2(100) and the Si(001) planes. Highly oriented films of CrSi2 were grown on (111) silicon substrates, with the matching crystallographic faces being CrSi2(001)/Si(111). The reflection high-energy electron diffraction (RHEED) patterns of the films consist of sharp streaks, symmetrically arranged. The predominant azimuthal orientation of the films was determined to be CrSi2(210) parallel to Si(110). This highly desirable heteroepitaxial relationship has been obtained previously by others; it may be described with a common unit mesh of 51 A(sup 2) and mismatch of 0.3 percent. RHEED also revealed the presence of limited film regions of a competing azimuthal orientation, CrSi2(110) parallel to Si(110). A channeling effect for MeV He(+) ions was not found for this material. Potential commercial applications of this research may be found in silicon-integrated infrared detector arrays. Optical characterizations showed that semiconducting ReSi2 is a strong absorber of infrared radiation, with the adsorption constant increasing above 2 x 10(exp 4) cm(sup -1) for photon energies above 0.2 eV. CrSi2 is of potential utility for detection at photon energies above approximately 0.3 eV.

Mahan, John E.↗
NASA NTRS1992

Silicon micromachined waveguides for millimeter and submillimeter wavelengths

The majority of radio receivers, transmitters, and components operating at millimeter and submillimeter wavelengths utilize rectangular waveguides in some form. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. This paper reports on the development of silicon micromachining techniques to create silicon-based waveguide circuits which can operate at millimeter and submillimeter wavelengths. As a first step, rectangular WR-10 waveguide structures have been fabricated from (110) silicon wafers using micromachining techniques. The waveguide is split along the broad wall. Each half is formed by first etching a channel completely through a wafer. Potassium hydroxide is used to etch smooth mirror-like vertical walls and LPCVD silicon nitride is used as a masking layer. This wafer is then bonded to another flat wafer using a polyimide bonding technique and diced into the U-shaped half wavelengths. Finally, a gold layer is applied to the waveguide walls. Insertion loss measurements show losses comparable to those of standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems. Potential applications in terahertz instrumentation technology are further discussed.

Yap, Markus↗
NASA NTRS1993

Silicon micromachined waveguides for millimeter-wave and submillimeter-wave frequencies

Rectangular waveguide is commonly used up to high millimeter-wave frequencies. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. The development of silicon micro-machining techniques to create silicon-based waveguide circuits, which can operate up to high submillimeter-wave frequencies, is reported. As a first step, WR-10 waveguide has been fabricated from (110) silicon wafers. Insertion loss measurements of gold plated silicon waveguide show performance comparable to standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems.

Mcgrath, William R.↗
NASA NTRS1993

Method of forming silicon structures with selectable optical characteristics

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers or phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization.

Fathauer, Robert W.↗
NASA NTRS1994

The effect of Low Earth Orbit exposure on some experimental fluorine and silicon-containing polymers

Several experimental fluorine and silicon-containing polymers in film form were exposed to low Earth orbit (LEO) on a Space Shuttle flight experiment (STS-46, Evaluation of Oxygen Interaction with Materials, EOIM-3). The environmental parameters of primary concern were atomic oxygen (AO) and ultraviolet (UV) radiation. The materials were exposed to 2.3 plus or minus 0.1 x 10(exp 20) oxygen atoms/sq cm and 30.6 UV sun hours during the flight. In some cases, the samples were exposed at ambient, 120 C and 200 C. The effects of exposure on these materials were assessed utilizing a variety of characterization techniques including optical, scanning electron (SEM) and scanning tunneling (STM) microscopy, UV-visible (UV-VIS) transmission, diffuse reflectance infrared (DR-FTIR), x-ray photoelectron (XPS) spectroscopy, and in a few cases, gel permeation chromatography (GPC). In addition, weight losses of the films, presumably due to AO erosion, were measured. The fluorine-containing polymers exhibited significant AO erosion and exposed films were diffuse or 'frosted' in appearance and consequently displayed dramatic reductions in optical transmission. The silicon-containing films exhibited minimum AO erosion and the optical transmission of exposed films was essentially unchanged. The silicon near the exposed surface in the films was converted to silicate/silicon oxide upon AO exposure which subsequently provided protection for the underlying material. The silicon-containing epoxies are potentially useful as AO resistant coatings and matrix resins as they are readily processed into carbon fiber reinforced composites and cured via electron radiation.

Connell, John W.↗
NASA NTRS1994

Method for molding structural parts utilizing modified silicone rubber

This invention improves upon a method for molding structural parts from preform material. Preform material to be used for the part is provided. A silicone rubber composition containing entrained air voids is prepared. The silicone rubber and preform material assembly is situated within a rigid mold cavity used to shape the preform material to the desired shape. The entire assembly is heated in a standard heating device so that the thermal expansion on the silicone rubber exerts the pressure necessary to force the preform material into contact with the mold container. The introduction of discrete air voids into the silicone rubber allows for accurately controlled pressure application on the preform material at the cure temperature.

Weisner, Erik S.↗
NASA NTRS1994

Reactive Melt Infiltration of Silicon-Niobium Alloys in Microporous Carbons

Studies of the reactive melt infiltration of silicon-niobium alloys in microporous carbon preforms prepared by the pyrolysis of a polymer precursor have been carried out using modeling, Differential Thermal Analysis (DTA), and melt infiltration. Mercury porosimetry results indicate a very narrow pore size distribution with virtually all the porosity within the carbon preforms open to infiltrants. The morphology and amount of the residual phases (niobium disilicide and silicon) in the infiltrated material can be tailored according to requirements by careful control of the properties (pore size and pore volume) of the porous carbon preforms and alloy composition. The average room temperature four-point flexural strength of a reaction-formed silicon carbide material (made by the infiltration of medium pore size carbon preform with Si - 5 at. % Nb alloy) is 290 +/- 40 MPa (42 +/- 6 ksi) and the fracture toughness is 3.7 +/- 0.3 MPa square root of m. The flexural strength decreases at high temperatures due to relaxation of residual thermal stresses and the presence of free silicon in the material.

Singh, M.↗
NASA NTRS1995

Growth Of Delta-Doped Layer On Silicon CCD

Response to ultraviolet light enhanced. Back-side-illuminated silicon charge-coupled device fabricated exhibiting nearly 100 percent internal quantum efficiency in near ultraviolet, by using molecular beam epitaxy to grow thin crystalline-silicon layer containing high concentration of boron (p-type dopant). By confining dopant atoms to one or few atomic layers in silicon lattice, concentration-vs.-depth profile made to resemble Dirac delta function, and resulting silicon layer said to be "delta-doped."

Hoenk, Michael E.↗
NASA NTRS1995

Temperature dependence of the biaxial modulus, intrinsic stress and composition of plasma deposited silicon oxynitride films

Silicon oxynitride films were deposited by plasma-enhanced chemical-vapor deposition. The elemental composition was varied between silicon nitride and silicon dioxide: SiO(0.3)N(1.0), SiO(0.7)N(1.6), SiO(0.7)N(1.1), and SiO(1.7)N(0.%). These films were annealed in air, at temperatures of 40-240 C above the deposition temperature (260 C), to determine the stability and behavior or each composition. the biaxial modulus, biaxial intrinsic stress, and elemental composition were measured at discrete intervals within the annealing cycle. Films deposited from primarily ammonia possessed considerable hydrogen (up to 38 at.%) and lost nitrogen and hydrogen at anneal temperatures (260-300 C) only marginally higher than the deposition temperature. As the initial oxygen content increased a different mechanism controlled the behavior or the film: The temperature threshold for change rose to approximately equal to 350 C and the loss of nitrogen was compensated by an equivalent rise in the oxygen content. The transformation from silicon oxynitride to silica was completed after 50 h at 400 C. The initial biaxial modulus of all compositions was 21-3- GPa and the intrinsic stress was -30 to 85 MPa. Increasing the oxygen content raised the temperature threshold where cracking first occurred; the two film compositions with the highest initial oxygen content did not crack, even at the highest temperature (450 C) investigated. At 450 C the biaxial modulus increased to approximately equal to 100 GPa and the intrinsic stress was approximately equal to 200 MPa. These increases could be correlated with the observed change in the film's composition. When nitrogen was replaced by oxygen, the induced stress remained lower than the biaxial strength of the material, but, when nitrogen and hydrogen were lost, stress-relieving microcracking occurred.

Harding, David R.↗
NASA NTRS1996

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Mitchell, Sharanda L.↗
NASA NTRS1995

Separation and Detection of Toxic Gases with a Silicon Micromachined Gas Chromatography System

A miniature gas chromatography (GC) system was designed and fabricated using silicon micromachining and integrated circuit (IC) processing techniques. The silicon micromachined gas chromatography system (SMGCS) is composed of a miniature sample injector that incorporates a 10 microliter sample loop; a 0.9 meter long, rectangular shaped (300 micrometer width and 10 micrometer height) capillary column coated with a 0.2 micrometer thick copper phthalocyanine (CuPc) stationary phase; and a dual detector scheme based upon a CuPc-coated chemiresistor and a commercially available 125 micrometer diameter thermal conductivity detector (TCD) bead. Silicon micromachining was employed to fabricate the interface between the sample injector and the GC column, the column itself, and the dual detector cavity. A novel IC thin-film processing technique was developed to sublime the CuPc stationary phase coating on the column walls that were micromachined in the host silicon wafer substrate and Pyrex (r) cover plate, which were then electrostatically bonded together. The SMGCS can separate binary gas mixtures composed of parts-per-million (ppm) concentrations of ammonia (NH3) and nitrogen dioxide (NO2) when isothermally operated (55-80 degrees C). With a helium carrier gas and nitrogen diluent, a 10 microliter sample volume containing ammonia and nitrogen dioxide injected at 40 psi ((2.8 x 10(exp 5)Pa)) can be separated in less than 30 minutes.

Kolesar, Edward S.↗
NASA NTRS1998

Fine Collimator Grids Using Silicon Metering Structure

The project Fine Collimator Grids Using Silicon Metering Structure was managed by Dr. Carol Eberhard of the Electromagnetic Systems & Technology Department (Space & Technology Division) of TRW who also wrote this final report. The KOH chemical etching of the silicon wafers was primarily done by Dr. Simon Prussin of the Electrical Engineering Department of UCLA at the laboratory on campus. Moshe Sergant of the Superconductor Electronics Technology Department (Electronics Systems & Technology Division) of TRW and Dr. Prussin were instrumental in developing the low temperature silicon etching processes. Moshe Sergant and George G. Pinneo of the Microelectronics Production Department (Electronics Systems & Technology Division) of TRW were instrumental in developing the processes for filling the slots etched in the silicon wafers with metal-filled materials. Their work was carried out in the laboratories at the Space Park facility. Moshe Sergant is also responsible for the impressive array of Scanning Electron Microscope images with which the various processes were monitored. Many others also contributed their time and expertise to the project. I wish to thank them all.

Eberhard, Carol↗