Effect of Ionic Strength on H2O and Si-Species Stability Field Geometry in pH-Eh Space
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Advances in fuel injector technology have enabled research and development on a large variety of direct injection spark ignition (DISI) engine fueling strategies targeted to improve engine performance and reduce engine-out emissions. This study explores the effect of multiple injections on knock, engine efficiency and stability, and particulate number and gaseous emissions on a single-cylinder DISI research engine. Work to date on multiple injections in the literature is reviewed, and then two aspects of multiple injection strategies are experimentally investigated: the number of injections (up to five times in a cycle); and the timing of the injections (classified relative to the timing of intake valve opening and closing). A boosted, single-cylinder research engine equipped with a state-of-the-art piezoelectric hollow cone spray direct injector and research-grade E10 gasoline was used for the study. The results show multiple injections maintain torque and combustion stability compared with single injection and slightly increase the knock limits and indicated thermal efficiencies (maximum 0.7% absolute, 2.8% relative compared with single-injection baseline) due to improved heat release phasing, especially with an additional late injection during the intake valve closed (compression stroke) period. The gaseous pollutant emissions including nitrogen oxides and unburned hydrocarbons were reduced by 25% with multiple injections, particularly with injection during the compression stroke. In contrast, carbon monoxide emissions increased with multiple injections for all conditions. Increasing the number of injection events significantly reduced particulate number emissions (half with each additional injection), and the decrease in particulate number was not sensitive to the injection timing.
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Low thermal budget (LTB) annealing has become increasingly critical for shallow junctions as semiconductor devices are scaled down. Plasma Enhanced Annealing (PEA) has emerged as a promising LTB annealing process, however its mechanisms remain unclear. In this study, arsenic and boron implanted silicon wafers were subjected to helium or argon ion bombardment generated by annealing plasmas under controlled ion energies and doses in a home-built annealing reactor. The structural and electrical changes were characterized by four-point probe measurements, secondary ion mass spectrometry, Raman spectroscopy and spectroscopic ellipsometry. A pronounced reduction in sheet resistance, accompanied by a decrease in the damage layer thickness demonstrates the surface selective annealing capability of PEA process. Comparative studies using He and Ar plasmas and related ion bombardment reveal a dependence of activation efficacy on both ion species and the dopant implantation profile. Furthermore, a multi-step annealing mechanism is proposed, consisting of an initial (low dose) structural recovery stage followed by the generation of “extended” defects and concluded at large doses by an enhanced dopant activation. The proposed annealing kinetics are thought to be controlled by ion flux, dose and energy. Finally, these results highlight PEA as an effective, surface-selective, LTB approach for shallow-dopant activation and near surface annealing, and provide mechanistic insights into PEA processes.
Detailed nanoscale characterizations revealed the formation of a considerably higher fraction of SiO 2 particles in the external Cr 2 O 3 layer on a NiCr alloy. In addition, atom probe tomography revealed substantially lower segregation of Mn at the Cr 2 O 3 grain boundaries in wet air compared to dry air exposures, where the intriguing formation of Mn-rich clusters was observed in the Cr 2 O 3 grains for the very first time. These findings provided additional evidence regarding the impact of distinct transport processes through the Cr 2 O 3 layer on the resulting oxidation rates and subsurface alloy compositional changes.