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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Low keV electron probe analysis of silicate minerals for Mg, Al, and Si using pure-element standards

Accurate electron probe values for Mg, Al, and Si in silicate minerals may be obtained with pure-element standards. Analysis must be done at low (6 kV) accelerating potential and for best results, the average atomic number of the sample should be within about plus or minus 1 of the atomic number of the pure-element standard. This last requirement is automatically fulfilled for most common silicate minerals, as their average atomic numbers usually fall within the 11 to 15 range. Examples studied include a wet-chemically analyzed cordierite containing 17.71 weight percent Al, for which a value of 17.6 plus or minus 0.3 percent was obtained with the electron probe, and a hornblende containing 19.15 percent Si, which gave 19.0 plus or minus 0.3 percent using the probe method.

Cunningham, G. G.↗
NASA NTRS1973

Solid-phase epitaxial growth of Si mesas from Al metallization.

Using scanning electron microscopy, Si epitaxial growth from solution in solid Al onto crystal Si substrates was studied. Growth in reentrant corners of the substrate was found to be favored over growth onto a flat surface. These preferred locations for growth appear to be the result of a force not present in conventional crystal growth from fluid media, namely, the nonuniform stress field present in solids.

Sankur, H.↗
NASA NTRS1975

Si(Li) X-ray astronomical spectroscopy

The general considerations involved in the choice of Si(Li) as a non-dispersive spectrometer for X-ray astronomy are discussed. In particular, its adaptation to HEAO-B is described as an example of the space-borne application of Si(Li) technology.

Holt, S. S.↗
NASA NTRS1975

Precipitation of silicon from splat-cooled Al-Si alloys

Splat cooled Al-Si solid solutions with 1 to 11 at.% Si were prepared and their precipitation kinetics were studied by transmission electron microscopy. The time required for appearance of particles visible at a magnification of 35,000 times was determined at temperatures between 248 K and 573 K. The resulting Arrhenius plots yielded activation energies ranging from 55 to 40 plus or minus 2kJ/mol over the composition range. Precipitate densities were higher and denuded zones of 100 to 150 nm were narrower than in comparable solid quenched samples. The activation energies are explained in terms of excess point defect concentrations.

Matyja, H.↗
NASA NTRS1976

A comparison of GaAs and Si hybrid solar power systems

An analytical comparison of energy output from various silicon and gallium arsenide hybrid solar power systems, producing electric power and also thermal power for heating or cooling, is made. System performance indices in terms of capital cost, peak power, total power output, and electric power were evaluated. Limiting values for annual energy production from GaAs and Si solar concentrator systems were estimated to be 2 cents and 6.8 cents per kWh for GaAs concentrator systems and between 2.5 cents and 11 cents per kWh for Si concentrator systems.

Heinbockel, J. H.↗
NASA NTRS1976

Si II lines in the shell of Zeta Tau

Non-LTE strengths of Si II lines were computed in an effort to reproduce the observed strengths of Si II lines in the shell spectrum of Zeta Tau. This effort was unsuccessful, probably because it assumed that the shell could be represented by a finite, plane-parallel slab. The main conclusion of this study, then, is that in order to understand the shell spectra of Be stars, a more realistic geometry must be assumed, in which the shell is represented by a thick disk.

Heap, S. R.↗
NASA NTRS1977

Mean mass of cosmic-ray Ne, Mg, Si at 1.2 GeV/amu

The mean mass of cosmic-ray Ne, Mg, and Si in the energy range from 800 to 1800 MeV/amu has been measured using a technique employing the effect of the geomagnetic field on the cosmic-ray fluxes. The values for the neutron excess at the top of the atmosphere are 0.45 + or - 0.10, 0.32 + or - 0.11, and 0.26 + or - 0.16 for Ne, Mg, and Si, respectively. These results, when account is taken of the effects of galactic propagation, imply values for the neutron excess in the cosmic-ray source which are in agreement with solar-system values.

Dwyer, R.↗
NASA NTRS1978

Theoretical intensity ratios for the UV lines of Mg VII, Si IX and S XI

Energy levels, oscillator strengths, and electron collision strengths have been computed for the configurations 2s2 2p2, 2s 2p3, 2p4 of Mg VII, Si IX, and S XI. Level populations for the ground configuration and theoretical intensity ratios for the UV lines are tabulated for electron densities and temperatures appropriate to the solar atmosphere. The identification of the Mg VII, Si IX, and S XI UV lines is discussed.

Mason, H. E.↗
NASA NTRS1978

Measurements of pulse-height defect in Au-Si detectors for H, He, C, N, O, Ne, Ar, Kr from about 2 to 400 keV/nucleon

We report measurements of pulse-height defects in Si surface-barrier detectors for a variety of ions and energies. We find: (1) for ions up to Ne our measurements agree remarkably well with calculations based on energy loss and nuclear defect theory, (2) for heavier ions we find systematic deviations, (3) there is no evidence of a dead layer at the Si-Au interface, and (4) our measurements are consistently reproducible for detectors fabricated in our laboratory.

Ipavich, F. M.↗
NASA NTRS1979

Echelle observations of C III lambda 1909 and Si III lambda 1892

Profiles of C III 1909 and Si III 1892 obtained on and near the limb during the 1976 flight of the University of Hawaii echelle rocket spectrograph were reduced and analyzed to determine electron densities and mass motions. The electron pressure derived agrees well with that determined by Cook and Nicolas (1979) from ATM data. Nonthermal velocities in the region of formation of Si III 1892 on the disk were found to be 10-12 km/s, somewhat lower than the values obtained by Doschek et al. (1976), also from ATM spectra. However, velocities derived at and above the limb were in closer agreement, about 17 km/s.

Allen, M. S.↗
NASA NTRS1980

Half-life of Si-32 from tandem-accelerator mass spectrometry

A newly developed mass-spectrometry technique employing a tandem Van de Graaff accelerator together with a special beam-transport system and heavy-ion detector has been used to determine the half-life of Si-32. The result obtained, 108 plus or minus 18 yr, disagrees with the accepted value of 330 plus or minus 40 yr. The implications of the new half-life of Si-32, which is used for dating studies, are discussed.

Elmore, D.↗
NASA NTRS1980

Analysis of GaAs and Si solar cell arrays for earth orbital and orbit transfer missions

Solar array systems have been studied and compared for earth orbital and orbit transfer missions with the principal objective of quantifying the cost tradeoffs between gallium arsenide and silicon array for specific classes of missions and system characteristics. For the missions considered, it is found that the purchase cost advantage of Si arrays is not overcome by the greater radiation resistance of GaAs arrays. The use of reflectors for concentration may significantly reduce the power system cost. However, GaAs arrays benefit considerably more from solar concentration than Si arrays in terms of mission cost because of their higher allowable temperature. In the case of orbit transfer missions, a cover glass thickness of at least 0.05 cm is recommended to reduce total mission cost.

Jefferies, K. S.↗
NASA NTRS1981

On the origin and distribution of C IV and Si IV ions in the neighboring interstellar medium

IUE spectrometer observational data are reported on the C IV, Si IV, and N V absorption lines in 46 distant stars at FWHM resolution of 30 km/sec. A simple analytic theory is given for these contributions, including the effects of ionization by a soft X-ray background. While for some of the most distant field stars a photoionized contribution may be ruled out, C IV absorption lines are detected which are shallow and broad. It is suggested that what are being detected in these cases are contributions from the hot interstellar gas that is responsible for the O VI absorption lines. Most of the Si IV and C IV lines probably arise in the H II regions surrounding the observed star or its neighbors.

Cowie, L. L.↗
NASA NTRS1980

Nuclear gamma rays from 720-MeV alpha-induced reactions on Al-27 and Si-28

Prompt gamma rays from the interaction of 720-MeV alpha particles with Al-27 and Si-28 were detected and analyzed to identify residual nuclei and to determine cross sections for production of specific levels. No gamma-ray transitions were detected from nuclei heavier than the target. From Doppler broadening, the momentum of the residual nuclei was estimated. The results are compared with previous results for 140- and 1600-MeV alphas on Al-27 and approximately 200-MeV positive or negative pions on Al-27 and Si-28 and fitted to a spallation-yield formula.

Lieb, B. J.↗
NASA NTRS1982

Evidence of redshifts in the average solar line profiles of C IV and Si IV from OSO-8 observations

Line profiles of C IV and Si V obtained by the Colorado spectrometer on OSO-8 are presented. It is shown that the mean profiles are redshifted with a magnitude varying from 6-20 km/s, and with a mean of 12 km/s. An apparent average downflow of material in the 50,000-100,000 K temperature range is measured. The redshifts are observed in the line center positions of spatially and temporally averaged profiles and are measured either relative to chromospheric Si I lines or from a comparison of sun center and limb profiles. The observations of 6-20 km/s redshifts place constraints on the mechanisms that dominate EUV line emission since it requires a strong weighting of the emission in regions of downward moving material, and since there is little evidence for corresponding upward moving materials in these lines.

Roussel-Dupre, D.↗
NASA NTRS1982

Nitridation of Si(111) by nitrogen atoms. II

The reaction between Si(111) and nitrogen atoms has been investigated by LEED, Auger, and electron energy loss (ELS) techniques. The early stage of the reaction at 850-1050 C involves the formation of a chemically reacted monolayer which grows in islands. The sticking coefficient for the submonolayer is estimated to be of the order of unity. Two electronically different surface structures can be formed during these stages, yielding the '8 x 8' and the quadruplet LEED patterns; the quadruplet unit cell is the one with the highest nitrogen density. A pure quadruplet structure is obtained from samples with a carbon contamination of the Si monolayer of about 5 pct. During the multilayer stages, the influence of the substrate is not as important, and the reactions at 850 C and above produce quadruplet-like local structures.

Schrott, A. G.↗
NASA NTRS1982

Crystal nucleation in Pd-Si alloys

A study of the crystal phase nucleation in undercooled droplets of Pd-Si alloys with composition near the Pd(84.5)Si(15.5) eutectic composition is reported. Molten droplets are released at the top of a drop tube and solidify (to either a crystalline or glassy state) during descent. This provides a containerless (and nearly gravity free) environment so that nucleation due to container walls or vibrations is eliminated. It is found that crystallization, due to homogeneous nucleation, is bypassed in droplets of 1 mm diameter when cooled at 760 K/sec. From this an upper limit of the homogeneous nucleation rate is estimated. Results are compared with a previously published study of nucleation in 0.06 mm to 0.33 mm diameter droplets, which indicated that nucleation results from heterogeneous surface nucleation and that the number of these nuclei is dependent on the atmosphere in the drop tube.

Drehman, A. J.↗
NASA NTRS1983

Si III line ratios in the sun

New atomic data for Si III have been used to predict level populations and emission-line intensity ratios for electron densities and temperatures appropriate to the solar transition region. The electron impact collision rates used here are substantially larger than those previously published owing to delineation of the complex resonance structures in the low-energy collision strengths. This together with small changes in the spontaneous radiative rates produces significant changes in the calculated intensity ratios. Generally good agreement is found with observations obtained using the Naval Research Laboratory slit spectrograph aboard Skylab, electron densities from three Si III ratios and from other methods normally agreeing to 0.2 dex or better for a wide variety of solar features. For a fourth ratio, incorporating lines with a wide wavelength separation, the agreement is less satisfactory, possibly owing to uncertainties in the observational data.

Dufton, P. L.↗