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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

High figure of merit and thermoelectric properties of Bi-doped Mg{sub 2}Si{sub 0.4}Sn{sub 0.6} solid solutions

The study of Mg{sub 2}Si{sub 1−x}Sn{sub x}-based thermoelectric materials has received widespread attention due to a potentially high thermoelectric performance, abundant raw materials, relatively low cost of modules, and non-toxic character of compounds. In this research, Mg{sub 2.16}(Si{sub 0.4}Sn{sub 0.6}){sub 1−y}Bi{sub y} solid solutions with the nominal Bi content of 0≤y≤0.03 are prepared using a two-step solid state reaction followed by spark plasma sintering consolidation. Within this range of Bi concentrations, no evidence of second phase segregation was found. Bi is confirmed to occupy the Si/Sn sites in the crystal lattice and behaves as an efficient n-type dopant in Mg{sub 2}Si{sub 0.4}Sn{sub 0.6}. Similar to the effect of Sb, Bi doping greatly increases the electron density and the power factor, and reduces the lattice thermal conductivity of Mg{sub 2.16}Si{sub 0.4}Sn{sub 0.6} solid solutions. Overall, the thermoelectric figure of merit of Bi-doped Mg{sub 2.16}Si{sub 0.4}Sn{sub 0.6} solid solutions is improved by about 10% in comparison to values obtained with Sb-doped materials of comparable dopant content. This improvement comes chiefly from a marginally higher Seebeck coefficient of Bi-doped solid solutions. The highest ZT∼1.4 is achieved for the y=0.03 composition at 800 K. - Graphical abstract: (a)The relationship between electrical conductivity and power factor for Sb/Bi-doped Mg{sub 2.16}(Si{sub 0.4}Sn{sub 0.6}){sub 1−y}(Sb/Bi){sub y} (0<y≤0.03) solid solutions. (b)The correlation between temperature and the combination of the lattice and the bipolar terms of thermal conductivity of Mg{sub 2.16}(Si{sub 0.4}Sn{sub 0.6}){sub 1−y}Bi{sub y} (0≤y≤0.03) solid solutions. (c)Temperature dependent dimensionless figure of merit ZT of Mg{sub 2.16}(Si{sub 0.4}Sn{sub 0.6}){sub 1−y}Bi{sub y} (0≤y≤0.03) solid solutions. - Highlights: • Bi doped Mg{sub 2.16}Si{sub 0.4}Sn{sub 0.6} showed 15% enhancement in the power factor as compared to Sb doped samples. • Bi doping reduced κ{sub ph} of Mg{sub 2.16}Si{sub 0.4}Sn{sub 0.6} due to stronger point defect scattering. • The highest ZT=1.4 at 800 K was achieved for Mg{sub 2.16}(Si{sub 0.4}Sn{sub 0.6}){sub 0.97}Bi{sub 0.03}.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Realization of single-termination SrTiO{sub 3} (100) surfaces by a microwave-induced hydrothermal process

A microwave-induced hydrothermal etching of SrTiO{sub 3} (100) single crystal surfaces in deionized water and subsequent annealing in oxygen atmosphere results in single-terminated and atomically flat terraces for pure and niobium-doped substrates as confirmed through one unit-cell step height and uniform phase by atomic force microscopy. This process that requires 3 min of moderate microwave radiation completely avoids the use of hydrofluoric acid (HF) and related point defects due to fluorine in the crystal surface. The advantages of a safe, inexpensive, and environmentally neutral process hold promise to replace the existing standard protocol for substrate preparation based on buffered HF.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Calculation of self-diffusion coefficients in iron

On the basis of available P-V-T equation of state of iron, the temperature and pressure dependence of self-diffusion coefficients in iron polymorphs (α, δ, γ and ε phases) have been successfully reproduced in terms of the bulk elastic and expansivity data by means of a thermodynamical model that interconnects point defects parameters with bulk properties. The calculated diffusion parameters, such as self-diffusion coefficient, activation energy and activation volume over a broad temperature range (500-2500 K) and pressure range (0-100 GPa), compare favorably well with experimental or theoretical ones when the uncertainties are considered.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation

Radiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (FTIR) spectroscopy. Besides the appearance of point defects and their subsequent oxidation, the significant differences were shown to be in the behavior of the porous silicon properties in comparison with that of bulk silicon apparently due to the quantum size nature of nanoporous silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Density functional theory calculations of defect and fission gas properties in U-Si fuels

Accident tolerant fuels (ATF) are being developed in response to the Fukushima Daiichi accident in Japan. One of the options being pursued is U-Si fuels, such as the U 3 Si 2 and U 3 Si 5 compounds, which benefit from high thermal conductivity (metallic) compared to the UO 2 fuel (insulator or semi-conductor) used in current Light Water Reactors (LWRs). The U-Si fuels also have higher fissile density. In order to perform meaningful engineering scale nuclear fuel performance simulations, the material properties of the fuel, including the response to irradiation environments, must be known. Unfortunately, the data available for U-Si fuels are rather limited, in particular for the temperature range where LWRs would operate. The ATF HIP is using multi-scale modeling and simulations to address this knowledge gap. The present study investigates point defect and fission gas properties in U 3 Si 2 , which is one of the main fuel candidates, using density functional theory (DFT) calculations. Based on a few assumption regarding entropy contributions, defect and fission diffusivities are predicted. Even though uranium silicides have been shown to amorphize easily at low temperature, we assume that U 3 Si 2 remains crystalline under the conditions expected in Light Water Reactors (LWRs). The temperature and dose where amorphization occurs has not yet been well established.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2019

Electrical and Photoluminescence Studies of {LT-GaAs/GaAs:Si} Superlattices Grown by MBE on (100)- and (111)A-Oriented GaAs Substrates

The results of studying semiconductor structures proposed for the first time and grown, which combine the properties of LT-GaAs with p-type conductivity upon doping with Si, are presented. The structures are {LT-GaAs/GaAs:Si} superlattices, in which the LT-GaAs layers are grown at a low temperature (in the range 280–350°C) and the GaAs:Si layers at a higher temperature (470°C). The p-type conductivity upon doping with Si is provided by the use of GaAs(111)A substrates and the choice of the growth temperature and the ratio between As{sub 4} and Ga fluxes. The hole concentration steadily decreases, as the growth temperature of LT-GaAs layers is lowered from 350 to 280°C, which is attributed to an increase in the roughness of interfaces between layers and to the formation of regions depleted of charge carriers at the interfaces between the GaAs:Si and LT-GaAS layers. The evolution of the photoluminescence spectra at 77 K under variations in the growth temperature of LT-GaAs is interpreted as a result of changes in the concentration of Ga{sub As} and V{sub Ga} point defects and Si{sub Ga}–V{sub Ga}, V{sub As}–Si{sub As}, and Si{sub As}–Si{sub Ga} complexes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Polarization-induced confinement of continuous hole-states in highly pumped, industrial-grade, green InGaN quantum wells

We investigate industrial-grade InGaN/GaN quantum wells (QWs) emitting in the green spectral region under high, resonant pumping conditions. Consequently, an ubiquitous high energy luminescence is observed that we assign to a polarization field Confined Hole Continuum (CHC). Our finding is supported by a unique combination of experimental techniques, including transmission electron microscopy, (time-resolved) photoluminescence under various excitation conditions, and electroluminescence, which confirm an extended out-of-plane localization of the CHC-states. The larger width of this localization volume surpasses the QW thickness, yielding enhanced non-radiative losses due to point defects and interfaces, whereas the energetic proximity to the bulk valence band states promotes carrier leakage.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Short range atomic migration in amorphous silicon

Experiments on self-diffusion in amorphous silicon between 400 and 500 °C are presented, which were carried out by neutron reflectometry in combination with {sup 29}Si/{sup nat}Si isotope multilayers. Short range diffusion is detected on a length scale of about 2 nm, while long range diffusion is absent. Diffusivities are in the order of 10{sup −19}–10{sup −20} m{sup 2}/s and decrease with increasing annealing time, reaching an undetectable low value for long annealing times. This behavior is strongly correlated to structural relaxation and can be explained as a result of point defect annihilation. Diffusivities for short annealing times of 60 s follow the Arrhenius law with an activation enthalpy of (0.74 ± 0.21) eV, which is interpreted as the activation enthalpy of Si migration.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Comparison of binary collision approximation and molecular dynamics for displacement cascades in GaAs.

The predictions of binary collision approximation (BCA) and molecular dynamics (MD) simulations of displacement cascades in GaAs are compared. There are three issues addressed in this work. The first is the optimal choice of the effective displacement threshold to use in the BCA calculations to obtain the best agreement with MD results. Second, the spatial correlations of point defects are compared. This is related to the level of clustering that occurs for different types of radiation. Finally, the size and structure of amorphous zones seen in the MD simulations is summarized. BCA simulations are not able to predict the formation of amorphous material.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2014

Natural nanostructure and superlattice nanodomains in AgSbTe{sub 2}

AgSbTe{sub 2} has long been of interest for thermoelectric applications because of its favorable electronic properties and its low lattice thermal conductivity of ∼0.7 W/mK. In this work, we report new findings from a high-resolution transmission electron microscopy study revealing two nanostructures in single crystal Ag{sub 1−x}Sb{sub 1+x}Sb{sub 2+x} (with x = 0, 0.1, 0.2); (i) a rippled natural nanostructure with a period of ∼2.5–5 nm and (ii) superlattice ordered nanodomains consistent with cation ordering predicted in previous density functional theory studies. These nanostructures, combined with point-defects, probably serve as sources of scattering for phonons, thereby yielding a low lattice thermal conductivity over a wide temperature range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Wet chemical synthesis of ZnO-CdS composites and their photocatalytic activity

Highlights: • ZnO-CdS composites were synthesized by wet chemical method. • TEM, correlated SAED pattern, XRD, and SEM confirmed the structure of composites. • CdS amount added during composites synthesis influences their morphologies. • RhB degradation efficiency is higher for composites than that of pristine ZnO, depending on the catalyst morphology. - Abstract: The present study is focused on the wet chemical synthesis and the characterization of ZnO-CdS composites. The X-ray diffraction shows that the composites contain ZnO in hexagonal wurtzite structure and CdS in cubic phase. The scanning/transmission electron microscopy images reveal flower-like structures with different sizes depending on the CdS content. The optical investigations on composites reveal that the reflectance spectra disclose two thresholds of ∼370 nm and ∼460 nm associated with the ZnO and CdS, respectively. The photocatalytic activity measurements evidenced that the degradation efficiency of RhB in the presence of composites is higher comparatively with pristine ZnO, depending on the catalyst morphology, which varies with CdS content and the pH value of RhB solution. The electron paramagnetic resonance revealed the presence of the paramagnetic point defects in the samples. Thus, the wet chemical approaches are suitable for a large scale production of such ZnO-CdS composites having enhanced photocatalytic activity.

36 MATERIALS SCIENCE↗
DOE OSTI2018

The Study of Features of Formation and Properties of A{sup 3}B{sup 5} Semiconductors Highly Doped with Iron

Abstract—Layers of InAs, InSb, and GaSb semiconductors highly doped with iron during their growth by the method of pulsed laser deposition are studied experimentally. The best temperatures for layer formation on GaAs (100) substrates are: 250°C (InSb : Fe), 300°C (InAs : Fe), and 350°C (GaSb : Fe). At high Fe concentration (over 10 at %) the layers display ferromagnetic properties expressed in emergence of a hysteresis curve within the magnetic field dependences of the Hall resistance, negative magnetoresistance, and in some cases, ferromagnetic-type magnetization at measurements at room temperature. The atoms of iron do not change the type of layer conductivity; InAs : Fe and InSb : Fe layers possess n-type conductivity, and GaSb : Fe layers display p-type conductivity due to their intrinsic point defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Carbon related donor bound exciton transitions in ZnO nanowires

Several shallow donor bound exciton photoluminescence (PL) transitions are reported in ZnO nanowires doped with carbon. The emission energies are in the range of 3360.8–3361.9 meV, close to previously reported emission lines due to excitons bound to donor point defects, such as Ga, Al, In, and H. The addition of small amounts of hydrogen during growth results in a strong enhancement of the PL of these carbon related emission lines, yet PL and annealing measurements indicate no appreciable bulk hydrogen. The observation of two electron satellites for these emission lines enables the determination of the donor binding energies. The dependence of exciton localization energy on donor binding energy departs somewhat from the usual linear relationship observed for group III donors, indicating a qualitatively different central cell potential, as one would expect for a complex. Emission lines due to excitons bound to ionized donors associated with these defects are also observed. The dependence of the PL emission intensities on temperature and growth conditions demonstrates that the lines are due to distinct complexes and not merely excited states of each other.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms

The use of carbon (C) in SiGe base layers is an important approach to control the base layer dopant phosphorus (P) diffusion and thus enhance PNP heterojunction bipolar transistor (HBT) performance. This work quantitatively investigated the carbon impacts on P diffusion in Si₀.₈₂Ge₀.₁₈:C and Si:C under rapid thermal anneal conditions. The carbon molar fraction is up to 0.32%. The results showed that the carbon retardation effect on P diffusion is less effective for Si₀.₈₂Ge₀.₁₈:C than for Si:C. In Si₀.₈₂Ge₀.₁₈:C, there is an optimum carbon content at around 0.05% to 0.1%, beyond which more carbon incorporation does not retard P diffusion any more. This behavior is different from the P diffusion behavior in Si:C and the B in Si:C and low Ge SiGe:C, which can be explained by the decreased interstitial-mediated diffusion fraction f{sub I}{sup P,SiGe} to 95% as Ge content increases to 18%. Empirical models were established to calculate the time-averaged point defect concentrations and effective diffusivities as a function of carbon and was shown to agree with previous studies on boron, phosphorus, arsenic and antimony diffusion with carbon.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Morphology, electrical, and optical properties of heavily doped ZnTe:Cu thin films

We report on a study of the physical properties of ZnTe:Cu films with Cu content up to ∼12 at. % prepared using rf magnetron sputtering. The composition and lateral homogeneities are studied using X-ray photoelectron spectroscopy (XPS). Atomic force microscopy measurements on films deposited at different substrate temperatures (up to 325 °C) yielded activation energy of 12 kJ/mole for the grains growth. The results of XPS and electrical and optical measurements provide evidence for the formation of the ternary zinc copper telluride alloy in films containing Cu concentration above ∼4 at. %. The XPS results suggest that copper is incorporated in the alloy with oxidation state Cu{sup 1+} so that the alloy formula can be written Zn{sub 1−y}Cu{sub y} Te with y = 2−x, where x is a parameter measuring the stoichiometry in the Cu site. The formation of this alloy causes appreciable shift in the binding energies of the XPS peaks besides an IR shift in the energy band gap. Detailed analysis of the optical absorption data revealed the presence of two additional transitions, besides the band gap one, originating from the Γ{sub 8} and Γ{sub 7} (spin-orbit) valence bands to a donor level at ∼0.34 eV below the Γ{sub 6} conduction band. This interpretation yields a value for the valence band splitting energy Δ≅ 0.87 eV independent of copper concentration. On the other hand, the mechanism of formation of the alloy is tentatively explained in terms of a point defect reaction in which substitutional Cu defect Cu{sub Zn} is also created. Assuming that substitutional Cu is the dominant acceptor in the Zn rich alloy as in ZnTe, its formation energy was determined to be 1.7 eV close to the theoretical value (1.41 eV) in ZnTe.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Origin of the visible emission of black silicon microstructures

Silicon, the mainstay semiconductor in microelectronics, is considered unsuitable for optoelectronic applications due to its indirect electronic band gap that limits its efficiency as light emitter. Here, we univocally determine at the nanoscale the origin of visible emission in microstructured black silicon by cathodoluminescence spectroscopy and imaging. We demonstrate the formation of amorphous silicon oxide microstructures with a white emission. The white emission is composed by four features peaking at 1.98 eV, 2.24 eV, 2.77 eV, and 3.05 eV. The origin of such emissions is related to SiO{sub x} intrinsic point defects and to the sulfur doping due to the laser processing. Similar results go in the direction of developing optoelectronic devices suitable for silicon-based circuitry.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Undoped High-Resistance GaN Buffer Layer for AlGaN/GaN High-Electron-Mobility Transistors

It is shown that intentionally undoped high-resistance GaN buffer layers in AlGaN/GaN heterostructures with high electron mobility for transistors can be formed by ammonia molecular beam epitaxy. The GaN growth conditions have been optimized using calculations of the background impurity and point defect concentrations at different ratios of the gallium and ammonia fluxes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

A new set-up for in-situ probing of radiation effects in materials and electronic devices

The micro-probe facility installed at the Van de Graff accelerator at CTN/IST permits simultaneous measurements of Rutherford Backscattering Spectrometry (RBS), Particle Induced X-ray Emission (PIXE) and Iono-Luminescence (IL). Here we present a recent up-grade of the measurement chamber allowing improved optical sensitivity in IL measurements and opening the possibility to perform simultaneously electrical measurements. Combinations of all these characterization techniques make this setup a powerful tool to characterize and modify different materials with spatial resolution. In particular, it can be used to study radiation effects in different materials and electronic devices in-situ. IL is a luminescence technique that uses the ion beam as the excitation source. Compared with other luminescence techniques with spatial resolution like Cathodoluminescence, this technique has the advantage to probe deeper regions of the sample, several microns below the surface. The same ion beam used to produce luminescence, can create a high density of defects, in a controllable way and the new set-up allows monitoring optical and electrical properties in realtime. In this work we combine IL with I-V curve measurements to assess the response of Ga{sub 2}O{sub 3} and GaN to proton irradiation. Ga{sub 2}O{sub 3} and GaN are emerging materials for applications in high power electronics and are considered for radiation resistant electronics. We will present a systematic study of the changes in IL and conductivity in Ga{sub 2}O{sub 3} and GaN samples with the energy of the ion beam and with the time of exposure. In particular, it was observed that during the irradiation some luminescence bands related with intrinsic point defects decrease while other new bands appear. Simulations using the SRIM code were used to determine the depth profiles of ionization and displacement events, helping to correlate the optical and electrical response of the materials with certain radiation effects. These studies show the potentialities of measuring simultaneously IL and electrical conductivity and how these two characterization techniques can work as a sensitive tool to detect and quantify radiation effects. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗