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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Exceptional electronic transport and quantum oscillations in thin bismuth crystals grown inside van der Waals materials

Confining materials to two-dimensional forms changes the behaviour of the electrons and enables the creation of new devices. However, most materials are challenging to produce as uniform, thin crystals. Here we present a synthesis approach where thin crystals are grown in a nanoscale mould defined by atomically flat van der Waals (vdW) materials. Here, by heating and compressing bismuth in a vdW mould made of hexagonal boron nitride, we grow ultraflat bismuth crystals less than 10 nm thick. Due to quantum confinement, the bismuth bulk states are gapped, isolating intrinsic Rashba surface states for transport studies. The vdW-moulded bismuth shows exceptional electronic transport, enabling the observation of Shubnikov–de Haas quantum oscillations originating from the (111) surface state Landau levels. By measuring the gate-dependent magnetoresistance, we observe multi-carrier quantum oscillations and Landau level splitting, with features originating from both the top and bottom surfaces. Our vdW mould growth technique establishes a platform for electronic studies and control of bismuth’s Rashba surface states and topological boundary modes1,2,3. Beyond bismuth, the vdW-moulding approach provides a low-cost way to synthesize ultrathin crystals and directly integrate them into a vdW heterostructure.

36 MATERIALS SCIENCE↗
NASA NTRS1999

Structure and Morphology of Phthalocyanine Films Grown in Electrical Fields by Vapor Deposition

Phthalocyanine is a very stable organic material in the atmosphere and has been used in numerous applications, such as optical switching and optical storage devices. Although this material has already been discovered for several decades and has had extensive studies conducted on it, many properties still need to be better understood, for example, the mechanisms of forming different solid phases and of changing film morphology by external forces. Phthalocyanine has two preferred solid phases (alpha and beta phases) for which the crystal structures, surface morphology and optical properties are different. In order to investigate these phenomena and the relationship among them, phthalocyanine films have been synthesized by vapor deposition on quartz substrates with and without an external electrical field. Some substrates were coated with a very thin gold film for the electrical field. These films have been characterized using x-ray diffraction, scanning electron microscopy, Fourier transfer infrared spectroscopy, and Z-scan technique. The films have excellent chemical and thermal stability. However, the surface of these films grown without the electrical field shows flower-like morphology. When films are deposited under an electrical field (approximately 3000 V/cm), an aligned structure is revealed on the surface. A comparison of the structure, morphology, optical properties, and the growth mechanism for these films with and without an electrical field will be discussed.

Zhu, Shen↗
NASA NTRS2011

Wireless Inductive Power Device Suppresses Blade Vibrations

Vibration in turbomachinery can cause blade failures and leads to the use of heavier, thicker blades that result in lower aerodynamic efficiency and increased noise. Metal and/or composite fatigue in the blades of jet engines has resulted in blade destruction and loss of lives. Techniques for suppressing low-frequency blade vibration, such as gtuned circuit resistive dissipation of vibratory energy, h or simply "passive damping," can require electronics incorporating coils of unwieldy dimensions and adding unwanted weight to the rotor. Other approaches, using vibration-dampening devices or damping material, could add undesirable weight to the blades or hub, making them less efficient. A wireless inductive power device (WIPD) was designed, fabricated, and developed for use in the NASA Glenn's "Dynamic Spin Rig" (DSR) facility. The DSR is used to simulate the functionality of turbomachinery. The relatively small and lightweight device [10 lb (approx.=4.5 kg)] replaces the existing venerable and bulky slip-ring. The goal is the eventual integration of this technology into actual turbomachinery such as jet engines or electric power generators, wherein the device will facilitate the suppression of potentially destructive vibrations in fan blades. This technology obviates slip rings, which require cooling and can prove unreliable or be problematic over time. The WIPD consists of two parts: a remote element, which is positioned on the rotor and provides up to 100 W of electrical power to thin, lightweight piezoelectric patches strategically placed on/in fan blades; and a stationary base unit that wirelessly communicates with the remote unit. The base unit supplies inductive power, and also acts as an input and output corridor for wireless measurement, and active control command to the remote unit. Efficient engine operation necessitates minimal disturbance to the gas flow across the turbine blades in any effort to moderate blade vibration. This innovation makes it possible to moderate vibration on or in turbomachinery blades by providing 100 W of wireless electrical power and actuation control to thin, lightweight vibration-suppressing piezoelectric patches (eight actuation and eight sensor patches in this prototype, for a total of 16 channels) positioned strategically on the surface of, or within, titanium fan blades, or embedded in composite fan blades. This approach moves significantly closer to the ultimate integration of "active" vibration suppression technology into jet engines and other turbomachinery devices such as turbine electrical generators used in the power industry. The novel feature of this device is in its utilization of wireless technology to simultaneously sense and actively control vibration in rotating or stationary turbomachinery blades using piezoelectric patches. In the past, wireless technology was used solely for sensing and diagnostics. This technology, however, will accomplish much more, in terms of simultaneously sensing, suppressing blade vibration, and making it possible for detailed study of vibration impact in turbomachinery blades.

Morrison, Carlos R.↗
DOE OSTI2024

Conceptual Design of a Thermal–to-14-MeV Neutron Conversion Device for Use in the Advanced Test Reactor

Here, this paper details the conceptual design of a thermal-to-14-MeV neutron converter consisting of a mixture of lithium and deuterium in a blanket material. Such a device operates a two-step reaction, first generating tritons via thermal neutron absorption in the tritium breeding material, and in the second step, high-energy neutrons are produced either via deuterium-tritium fusion reaction or with tritium reacting with lithium. A thermal-to-14-MeV neutron converter significantly hardens the neutron spectrum by virtually removing thermal neutrons and adding a high-energy 14 MeV component to the neutron spectrum. While similar concepts have been previously proposed and tested in other reactors, the unique characteristics of the Advanced Test Reactor (ATR), namely its important thermal flux (up to $10^{15}$ n.cm$^{-2}$.s$^{-1}$) makes it markedly attractive for obtaining a very large fast neutron flux, usable for irradiation studies under neutron flux conditions prototypical of fusion reactors. The paper provides a description of a new computational scheme developed for handling the coupled neutron-triton transport mechanism using the Geant4 toolkit. Resulting neutron spectra and high-energy neutron yields are summarized for different irradiation positions and potential neutron breeder materials. Maximum predicted thermal-to-14-MeV neutron yields are on the order of $2.10^{-4}$, which is consistent with previous studies found in the literature. Thus, when placed inside the ATR, such a neutron converter will be providing the largest high-energy neutron source available for activation and irradiation studies of materials foreseen for use in fusion reactors. Future steps will involve qualifying the computational scheme using the ATR critical facility using activation foil measurements.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2023

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Photogating-driven enhanced responsivity in a few-layered ReSe 2 phototransistor

A wide variety of two-dimensional (2D) metal dichalcogenide compounds have recently attracted much research interest due to their very high photoresponsivities (R) making them excellent candidates for optoelectronic applications. High R in 2D photoconductors is associated with trap state dynamics leading to a photogating effect, which is often manifested by a fractional power dependence (γ) of the photocurrent (I ph ) at an effective illumination intensity (P eff ). Furthermore, we present photoconductivity studies as a function of gate voltages, over a wide temperature range (20 K to 300 K) of field-effect transistors fabricated using thin layers of mechanically exfoliated Rhenium Diselenide (ReSe 2 ). We obtain very high responsivities R ~ 16500 A/W and external quantum efficiency (EQE) ~ 3.2 × 106% (at 140 K, V g = 60 V and P eff = 0.2 nW). A strong correlation between R and γ was established by investigating the dependence of these two quantities at various gate voltages and over a wide range of temperatures. Such correlations indicate the importance of trap state mediated photogating and its role in promoting high photo-responsivities in these materials. We believe such correlations can offer valuable insights for the design and development of high-performance photoactive devices using 2D materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRSDate not supplied

Additive Manufacture of Novel Tungsten Wicking and Heat Transfer Structures

Additive manufacturing (AM) is utilized for fabricating complex geometries from refractory metals, such as tungsten and molybdenum. In this study, plates with ultra-fine and fine lattice structures were manufactured from tungsten to demonstrate printability and the component fabrication advantages of AM. Previous work was completed on individual tungsten lattice structures; this work demonstrates the advantages of printing these structures on tubing and first-wall materials. Initial work using stainless steel demonstrated increased heat transfer properties promoted by these lattice structures. Applications for these structures include wicking structures, heat pipes, and first-wall materials in fusion devices. A major advantage of these designs is the capability to produce a monolithic component with tailored heat transfer and wicking properties. This research helps promote the ability to use liquid lithium in fusion devices since these lattice structures manufactured from tungsten could act as a high temperature first-wall or divertor material and as a wicking structure for liquid lithium. Different lattice structures with varying unit cell sizes and strut thicknesses were printed and the effects of these structures on heat transfer properties were measured. Abrasion resistance of these structures was also investigated. This presentation will discuss the results of these experiments and their implications related to heat transfer applications. This work will help inform the development and implementation of complex geometries made from tungsten for future heat pipe and fusion first-wall or divertor component designs.

Carly J. Romnes↗
NASA NTRS2009

Synthesis Methods, Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing in Aerospace Applications

A comparison is made between SnO2, ZnO, and TiO2 single-crystal nanowires and SnO2 polycrystalline nanofibers for gas sensing. Both nanostructures possess a one-dimensional morphology. Different synthesis methods are used to produce these materials: thermal evaporation-condensation (TEC), controlled oxidation, and electrospinning. Advantages and limitations of each technique are listed. Practical issues associated with harvesting, purification, and integration of these materials into sensing devices are detailed. For comparison to the nascent form, these sensing materials are surface coated with Pd and Pt nanoparticles. Gas sensing tests, with respect to H2, are conducted at ambient and elevated temperatures. Comparative normalized responses and time constants for the catalyst and noncatalyst systems provide a basis for identification of the superior metal-oxide nanostructure and catalyst combination. With temperature-dependent data, Arrhenius analyses are made to determine an activation energy for the catalyst-assisted systems.

VanderWal, Randy L.↗
NASA NTRS2000

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths. In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors. With an energy gap of 2.7 eV at room temperature, and an efficient band- to-band transition, ZnSe has been studied extensively as the primary candidate for a blue light emitting diode for optical displays, high density recording, and military communications. By employing a ternary or quaternary system, the energy band gap of II-VI materials can be tuned to a specific range. While issues related to the compositional inhomogeneity and defect incorporation are still to be fully resolved, ZnSe bulk crystals and ZnSe-based heterostructures such as ZnSe/ZnSeS, ZnSe/ZnCdSe and ZnCdSe/ZnSeS have showed photopumped lasing capability in the blue-green region at a low threshold power and high temperatures. The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk H-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology.

Su, Ching-Hua↗
DOE OSTI2024

Vertical GaN Superjunction Diode on Sapphire with Kilovolt Dynamic Breakdown Voltage

The development of superjunction structures for use in vertical wide bandgap power devices promise to break the 1-D material limits. Additionally, the possibility of utilizing heteroepitaxial GaN-on-Sapphire wafer for vertical devices can significantly trim the material and device cost. This work introduces a quasi-vertical GaN-on-Sapphire superjunction PN diode design utilizing sputtered p-NiO on the etched GaN fins for superjunction formation. DC breakdown voltage is shown to vary with superjunction charge imbalance and significantly exceed the expected 1-D planar limit of 350V given the epilayer design used. A maximum breakdown voltage of 840 V is extracted for near charge balance conditions limited by leakage current. Dynamic breakdown of the device is characterized as a function of reverse voltage slew rate. A maximum dynamic breakdown voltage of 1160 V under a reverse voltage slew rate of 2000 V/μs is found.

Porter, Matthew↗
NASA NTRS1984

Importance and Definition of Materials in Tribology. Status of Understanding

In general, tribological systems consist of three basic components: the material surfaces in contact, the lubricant, and the environment. The materials in contact and the influence of both bulk and surface properties, indicating the importance of material characterization, on tribological behavior are addressed. Since metals and metallic alloys are the most widely used class of materials in practical devices, attention is focused principally on them. With respect to surface behavior, the effect of contaminants both from within the material and from the environment on adhesive behavior is addressed. The various surface events that alter adhesion, friction, and wear are discussed. These include surface reconstruction, segregation, chemisorption, and compound formation. Examples of these events are presented. Minor nuances in the structure of the outermost layers of solids have a pronounced effect on tribological properties. The importance of characterizing the materials of solids in contact in order to achieve a fundamental understanding of adhesion, friction, and wear and accordingly of methods for their control are addressed.

Buckley, D. H.↗
NASA NTRSDate not supplied

Space-qualified Chalcogenide Materials through ISS MISSE Exposure —From Property to Application

In March 2021, twenty-four samples of various phase change materials (PCMs - Ge2Sb2Te5, Ge2Sb2Se4Te1, and Sb2Se3) along with metasurface optical components comprised of these PCMs, were delivered to the International Space Station (ISS) as part of the Materials International Space Station Experiment (MISSE-14) test campaign [1]. Although PCMs have previously been noted for their resilience to various forms of radiation [2], they had not been tested in a realistic space environment until this exposure campaign with joint NASA and MIT collaboration. During the six-month total open exposure time in low earth orbit (LEO), high-resolution cameras scanned and captured photographs of the samples to detect changes as a function of time along with on-orbit measured temperature, UV radiation, total atomic oxygen fluence, and total ionizing radiation doses. The samples were returned to NASA Langley Research Center in March 2022 for post-flight characterization. This duplicated the preflight characterization (i.e., material composition and crystallinity that limits switching speed, index contrast, loss, etc.) conducted before launch. The space sector has witnessed tremendous growth within the past decade—not only from government agencies but also entrants from the private sector. Future growth in the capabilities of Earth observation, deep space, and planetary surface missions using miniaturized spacecraft platforms can only be sustained by innovations in the design of remote sensors and other sub-systems. Active metasurface optics with enhanced tunability and reconfigurability continues to redefine the boundaries of optical science [3]. The introduction of PCM technology and associated optical devices will help to accelerate the adoption of new architectures for reduced size, weight, power, and cost (SWaP-C) platforms in space.Here we introduce results obtained from the MISSE-14 mission related to space qualification of PCM-based optic devices and constituent materials. We then discuss our recent work developing active integrated photonic devices and metasurface optics based on PCMs for space applications. This includes tunable and reconfigurable optical metasurface devices to support NASA space communication and LIDAR applications. PCMs are quickly becoming interesting photonics materials but questions related to mission suitability remain, particularly in regard to key properties like figures-of-merit (FOM, Δn/Δk), glass forming temperatures, and phase transition speeds. This talk will describe efforts to afford researchers the ability to have access to cost-effective data on exposure-induced changes to PCM fundamental physical and optical properties to assess their utility for space applications. The MISSE-14 sample exposure campaign allows a complete understanding of the limitations of the PCMs for various space-based electronic and optoelectronic applications.

Chalcogenide Phase change material↗
DOE OSTI2020

Engineering of Lead Selenide Quantum Dot Based Devices and Core/Shell Heterostructures

Near infrared (NIR) emitting colloidal quantum dots (QDs) such as PbSe are interesting materials for implementation in various optoelectronic devices such as solar cells, photodetectors, and radiation detectors. Material properties like size tunable emission wavelengths, facile solution processability, the possibility of carrier multiplication and Auger assisted up-conversion, and high Z number provide PbSe QDs with unique advantages over many currently available commercial materials used in these devices. In this dissertation, after an introduction to QDs in general, we first focus on synthesis of PbSe-based heterostructured QDs for study via optical spectroscopy. PbSe/CdSe QDs synthesized via cation exchange reaction were used as seeds to study the proper conditions for further CdSe or CdS shell growth. Optical spectroscopy studies show that growth of thicker CdSe shells leads to tunable visible emission, while growth of thick CdS shells can greatly increase the photoluminescence quantum yield (PLQY) observed from the intermediate CdSe shell. NIR PL lifetimes can be greatly enhanced by the growth of CdS shells, due to strong delocalization of the hole wavefunction within the PbSe core, while the electron is delocalized throughout the QD including in the CdS shell, resulting in radiative lifetimes in the tens of microseconds. Two pulse delay measurements show that Auger assisted up conversion is also taking place in these engineered QD dot heterostructures. In the sections that follow, we look at QD devices, first with a focus on novel devices fabricated from PbSe QDs, using an amine synthesis method that allows for facile in-solution ligand exchange. QD film mobilities are measured for PbSe QDs capped with various short ionic ligands. Carrier densities in PbSe QD films are calculated from C-V measurements, showing for the first time that carrier densities can be modulated by simply changing the capping ligand. vii Radiation detectors utilizing PbSe QDs capped with KI and NH4I ligands show tangible response to incident alpha radiation. Current output response to alpha radiation is dependent on strength of radiation source and amount of bias voltage applied. In the final section a critical review of hybrid layered 2D-QD photodetectors is presented. In a typical example, PbSe and PbS QDs act as the absorbing layer in phototransistor devices which utilize layered 2D materials such as graphene and transition metal dichalcogenides as transport layers. Resulting devices display high gains and improved directivities compared to QD only and 2D only devices.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Material cutting, shaping, and forming: A compilation

Information is presented concerning cutting, shaping, and forming of materials, and the equipment and techniques required for utilizing these materials. The use of molds, electrical fields, and mechanical devices are related to forming materials. Material cutting methods by devices including borers and slicers are presented along with chemical techniques. Shaping and fabrication techniques are described for tubing, honeycomb panels, and ceramic structures. The characteristics of the materials are described. Patent information is included.

Source record↗
DOE OSTI2024

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Abstract Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga 2 O 3 . For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

Materials Science↗
DOE OSTI2023

Post-growth Recrystallization by Halides for High Throughput CIGS Photovoltaics

The objective of this project in broad terms was to address the capital equipment expense associated with Cu(In,Ga)Se 2 (CIGS) as a material for photovoltaic devices. This project has demonstrated a new method for processing CIGS using metal halides to recrystallize and enhance the quality of the final materials. A wide spectrum of metal halides were examined. Of these Cu and In chlorides and AgBr were found to be most effective; and, of these, AgBr was found to produce exemplary results. Cu and In chlorides were found to produce undesirable changes in film composition. The project demonstrated over 16% efficiency in a CIGS device deposited at 10x the standard rate of ~1 μm/hr and with a >100°C reduction in maximum temperature to 450°C. The entire deposition of the absorber layer including the recrystallization step required only 15 minutes, which is a 4x decrease in processing time.

14 SOLAR ENERGY↗
DOE OSTI2022

Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons

Abstract The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom‐up fabrication based on molecular precursors. This approach offers a unique platform for all‐carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5‐atom wide armchair GNRs (5‐AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5‐AGNRs are obtained via on‐surface synthesis under ultrahigh vacuum conditions from Br‐ and I‐substituted precursors. It is shown that the use of I‐substituted precursors and the optimization of the initial precursor coverage quintupled the average 5‐AGNR length. This significant length increase allowed the integration of 5‐AGNRs into devices and the realization of the first field‐effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub‐nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

36 MATERIALS SCIENCE↗