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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Vanadium doped Sb{sub 2}Te{sub 3} material with modified crystallization mechanism for phase-change memory application

In this paper, V{sub 0.21}Sb{sub 2}Te{sub 3} (VST) has been proposed for phase-change memory applications. With vanadium incorporating, VST has better thermal stability than Sb{sub 2}Te{sub 3} and can maintain in amorphous phase at room temperature. Two resistance steps were observed in temperature dependent resistance measurements. By real-time observing the temperature dependent lattice structure evolution, VST presents as a homogenous phase throughout the whole thermal process. Combining Hall measurement and transmission electron microscopy results, we can ascribe the two resistance steps to the unique crystallization mechanism of VST material. Then, the amorphous thermal stability enhancement can also be rooted in the suppression of the fast growth crystallization mechanism. Furthermore, the applicability of VST is demonstrated by resistance-voltage measurement, and the phase transition of VST can be triggered by a 15 ns electric pulse. In addition, endurance up to 2.7×10{sup 4} cycles makes VST a promising candidate for phase-change memory applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Enhanced electrocaloric effect in displacive-type organic ferroelectrics

We explore the intrinsic feature of electrocaloric effect (ECE) accompanied by ferroelectric (FE)-paraelectric (PE) transition for displacive-type organic ferroelectrics using Green's function theory. It is demonstrated that decreasing elastic constant K or increasing spin-lattice coupling λ can enhance the ECE, as well as polarization P and transition temperature T{sub C}. Indeed, one expects that the optimal operating temperature for solid-state refrigeration is around room temperature, at which the ECE achieves its maximum. As T{sub C} is tuned to ∼310 K, it presents larger ECE response and remanent polarization with lower coercive field for smaller K value, suggesting that well flexible displacive-type organic ferroelectrics are excellent candidates both for electric cooling and data storage in the design of nonvolatile FE random-access memories. Furthermore, in an electric field, it provides a bridge between a Widom line that denotes FE-PE crossover above T{sub C} and a metaelectric transition line below T{sub C} that demonstrates an FE switching behavior with an antiparallel field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Spin-transfer-torque efficiency enhanced by edge-damage of perpendicular magnetic random access memories

We numerically investigate the effect of magnetic and electrical damages at the edge of a perpendicular magnetic random access memory (MRAM) cell on the spin-transfer-torque (STT) efficiency that is defined by the ratio of thermal stability factor to switching current. We find that the switching mode of an edge-damaged cell is different from that of an undamaged cell, which results in a sizable reduction in the switching current. Together with a marginal reduction of the thermal stability factor of an edge-damaged cell, this feature makes the STT efficiency large. Our results suggest that a precise edge control is viable for the optimization of STT-MRAM.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Energetics of intrinsic defects in NiO and the consequences for its resistive random access memory performance

Energetics for a variety of intrinsic defects in NiO are calculated using state-of-the-art ab initio hybrid density functional theory calculations. At the O-rich limit, Ni vacancies are the lowest cost defect for all Fermi energies within the gap, in agreement with the well-known p-type behaviour of NiO. However, the ability of the metal electrode in a resistive random access memory metal-oxide-metal setup to shift the oxygen chemical potential towards the O-poor limit results in unusual NiO behaviour and O vacancies dominating at lower Fermi energy levels. Calculated band diagrams show that O vacancies in NiO are positively charged at the operating Fermi energy giving it the advantage of not requiring a scavenger metal layer to maximise drift. Ni and O interstitials are generally found to be higher in energy than the respective vacancies suggesting that significant recombination of O vacancies and interstitials does not take place as proposed in some models of switching behaviour.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge{sub 2}Sb{sub 2}Te{sub 5} nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Designing of smart home automation system based on Raspberry Pi

Locally networked or remotely controlled home automation system becomes a popular paradigm because of the numerous advantages and is suitable for academic research. This paper proposes a method for an implementation of Raspberry Pi based home automation system presented with an android phone access interface. The power consumption profile across the connected load is measured accurately through programming. Users can access the graph of total power consumption with respect to time worldwide using their Dropbox account. An android application has been developed to channelize the monitoring and controlling operation of home appliances remotely. This application facilitates controlling of operating pins of Raspberry Pi by pressing the corresponding key for turning “on” and “off” of any desired appliance. Systems can range from the simple room lighting control to smart microcontroller based hybrid systems incorporating several other additional features. Smart home automation systems are being adopted to achieve flexibility, scalability, security in the sense of data protection through the cloud-based data storage protocol, reliability, energy efficiency, etc.

42 ENGINEERING↗
DOE OSTI2018

Room temperature ferromagnetic resonance in hetero-epitaxial BTO - BFO / LSMO magnetoelectric composite

We synthesized epitaxial BTO-BFO heterostructure with decreased leakage and simultaneously improved the multiferroic properties. This study provides new direction for ferromagnetic resonance studies, in high quality BTO-BFO films grown on LSMO. We observed small Gilbert damping (α=0.004) and the absence of large inhomogeneous broadening, in a film with 80 nm thickness of BTO-BFO on LSMO (110). This fact offers opportunities for employing this material system for spin transfer in multifunctional materials where controlling magnetization by a flow of spin angular momentum, or spin current, is crucial toward developing nanoscale spin-based memory and devices. Magnetic insulators, such as BTO-BFO on LSMO, are potentially excellent candidates for pure spin current without the existence of charge current.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

A superconducting nanowire binary shift register

We present a design for a superconducting nanowire binary shift register, which stores digital states in the form of circulating supercurrents in high-kinetic-inductance loops. Adjacent superconducting loops are connected with nanocryotrons, three-terminal electrothermal switches, and fed with an alternating two-phase clock to synchronously transfer the digital state between the loops. A two-loop serial-input shift register was fabricated with thin-film NbN and a bit error rate of less than 10 –4 was achieved, when operated at a maximum clock frequency of 83 MHz and in an out-of-plane magnetic field of up to 6 mT. A shift register based on this technology offers an integrated solution for low-power readout of superconducting nanowire single photon detector arrays and is capable of interfacing directly with room-temperature electronics and operating unshielded in high magnetic field environments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Optimal periodic frequency combs for high-efficiency optical quantum memory based on rare-earth ion crystals

The possibility of enhancing the quantum efficiency of photon echo broadband quantum memory in rare-earth-ion-doped crystals with a frequency comb structure of optical transition inhomogeneous broadening is studied. We have found the optimal parameters of the frequency combs for implementing the pre-assigned quantum efficiency in the chosen spectral range of the optical transitions of rare-earth ions with real parameters. The obtained results allow the conditions to be formulated for increasing the efficiency of broadband quantum memory. The possibilities of experimental implementation of such memory are also discussed. (paper)

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Strongly correlated perovskite lithium ion shuttles

Solid-state ion shuttles are of broad interest in electrochemical devices, nonvolatile memory, neuromorphic computing, and biomimicry utilizing synthetic membranes. Traditional design approaches are primarily based on substitutional doping of dissimilar valent cations in a solid lattice, which has inherent limits on dopant concentration and thereby ionic conductivity. Here, we demonstrate perovskite nickelates as Li-ion shuttles with simultaneous suppression of electronic transport via Mott transition. Electrochemically lithiated SmNiO 3 (Li-SNO) contains a large amount of mobile Li + located in interstitial sites of the perovskite approaching one dopant ion per unit cell. A significant lattice expansion associated with interstitial doping allows for fast Li + conduction with reduced activation energy. We further present a generalization of this approach with results on other rare-earth perovskite nickelates as well as dopants such as Na + . The results highlight the potential of quantum materials and emergent physics in design of ion conductors.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Efficient multimode quantum memory based on photon echo in an optimal QED cavity

Effective multimode photon echo quantum memory on multiatomic ensemble in the QED cavity is proposed. We obtain the analytical solution for the quantum memory efficiency that can be equal to unity when optimal conditions for the cavity and atomic parameters are held. Detailed analysis of the optimal conditions is performed. Numerical estimation for realistic atomic and cavity parameters demonstrates the high efficiency of the quantum memory for an optically thin resonant atomic system that opens a door for real applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Coupling Rydberg atoms to superconducting qubits via nanomechanical resonator

We propose a hybrid system to realize long information storage and fast quantum operation via Rydberg atoms and superconducting qubits (SCQs). The internal states of a Rydberg atom are coupled to a nanomechanical resonator. The atom-resonator coupling is achieved via an electric field generated by the quantized motions of the resonator and temporarily exciting the atom to Rydberg states. The coupling can be made large enough to allow quantum manipulation and measurement of the resonator via the atom. The resonator can also be coupled to a SCQ, and therefore the tripartite system can provide a quantum interface between the SCQ and the atom via the nanomechanical resonator.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Quantum Kolmogorov complexity and bounded quantum memory

The effect of bounded quantum memory in a primitive information protocol has been examined using the quantum Kolmogorov complexity as a measure of information. We employed a toy two-party protocol in which Bob, by using a bounded quantum memory and an unbounded classical memory, estimates a message that was encoded in qubits by Alice in one of the bases X or Z. Our theorem gave a nontrivial effect of the memory boundedness. In addition, a generalization of the uncertainty principle in the presence of quantum memory has been obtained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Three-dimensional theory of quantum memories based on {Lambda}-type atomic ensembles

We develop a three-dimensional theory for quantum memories based on light storage in ensembles of {Lambda}-type atoms, where two long-lived atomic ground states are employed. We consider light storage in an ensemble of finite spatial extent and we show that within the paraxial approximation the Fresnel number of the atomic ensemble and the optical depth are the only important physical parameters determining the quality of the quantum memory. We analyze the influence of these parameters on the storage of light followed by either forward or backward read-out from the quantum memory. We show that for small Fresnel numbers the forward memory provides higher efficiencies, whereas for large Fresnel numbers the backward memory is advantageous. The optimal light modes to store in the memory are presented together with the corresponding spin waves and outcoming light modes. We show that for high optical depths such {Lambda}-type atomic ensembles allow for highly efficient backward and forward memories even for small Fresnel numbers F(greater-or-similar sign)0.1.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Strongly coupling a cavity to inhomogeneous ensembles of emitters: Potential for long-lived solid-state quantum memories

We investigate theoretically the coupling of a cavity mode to a continuous distribution of emitters. We discuss the influence of the emitters' inhomogeneous broadening on the existence and on the coherence properties of the polaritonic peaks. We find that their coherence depends crucially on the shape of the distribution and not only on its width. Under certain conditions the coupling to the cavity protects the polaritonic states from inhomogeneous broadening, resulting in a longer storage time for a quantum memory based on emitter ensembles. When two different ensembles of emitters are coupled to the resonator, they support a peculiar collective dark state, which is also very attractive for the storage of quantum information.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗