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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Easy-plane spin Hall nano-oscillators as spiking neurons for neuromorphic computing

Here we show analytically using a macrospin approximation that easy-plane spin Hall nano-oscillators excited by a spin current polarized perpendicularly to the easy plane have phase dynamics analogous to that of Josephson junctions. Similarly to Josephson junctions, they can reproduce the spiking behavior of biological neurons that is appropriate for neuromorphic computing. To take advantage of typical spin-orbit torques, we use a nanoconstriction geometry, in which the magnetostatic interaction and magnetocrystalline anisotropy are tuned to create an easy plane that includes the interface normal direction. We perform micromagnetic simulations of such oscillators realized in this geometry and show that the easy-plane spiking dynamics is preserved in this experimentally feasible architecture. Finally we simulate two elementary neural network blocks that implement operations essential for neuromorphic computing. First, we show that output spikes energies from two neurons can be summed and injected into a following layer neuron and second, we demonstrate that outputs can be multiplied by synaptic weights implemented by locally modifying the anisotropy.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Observation of Coulomb blockade and Coulomb staircases in superconducting Pr 0.8 Sr 0.2 NiO 2 films

Motivated by the discovery of superconductivity in the infinite-layer nickelate family, we report an experimental endeavor to clean the surface of nickelate superconductor Pr 0.8 Sr 0.2 NiO 2 films by Ar + ion sputtering and subsequent annealing, and we study their electronic structures by cryogenic scanning tunneling microscopy and spectroscopy. The annealed surfaces are characterized by nano-sized clusters and Coulomb staircases with periodicity inversely proportional to the projected area of the nanoclusters, consistent with a double-barrier tunneling junction model. Moreover, the dynamical Coulomb blockade effects are observed and result in well-defined energy gaps around the Fermi level, which correlate closely with the specific configuration of the junctions. These Coulomb blockade-related phenomena provide an alternative plausible cause of the observed gap structure that should be considered in the spectroscopic understanding of nickelate superconductors with the nano-clustered surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Longitudinal dynamics and particle production in relativistic nuclear collisions

This work presents a three-dimensional dynamical initialization model for relativistic heavy-ion collisions, implementing local energy-momentum conservation and baryon charge fluctuations at string junctions. Constraining parameters using experimental data from p + p collisions at various collision energies, the model provides a very good description of the charged hadron and net proton rapidity distributions in Au +Au collisions from 7.7 to 200 GeV and Pb + Pb collisions at 8.77 and 17.3 GeV. Here we demonstrate the importance of fluctuations of baryon densities to string junctions for describing net-proton distributions at collision energies of 62.4 and 200 GeV. Including this improved baryon stopping description along with the requirement of strangeness neutrality also yields a good description of identified particle yields as functions of the collision energy above 7.7 GeV. We further study asymmetric p + Al and (p,d, 3 He) + Au collisions at the top RHIC energy and p + Pb, Xe + Xe, and Pb + Pb collisions at LHC energies. We identify the produced particle rapidity distributions in asymmetric collision systems as particularly useful for constraining models of the early-time longitudinal dynamics.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Treelike structure of symmetry topological field theories and multisector QFTs

The global symmetries of a D -dimensional quantum field theory (QFT) can, in many cases, be captured in terms of a ( D + 1 )-dimensional symmetry topological field theory (SymTFT). In this work we construct a ( D + 1 )-dimensional theory which governs the symmetries of QFTs with multiple sectors which have connected correlators that admit a decoupling limit. The associated symmetry field theory decomposes into a SymTree, namely a treelike structure of SymTFTs fused along possibly nontopological junctions. In string-realized multisector QFTs, these junctions are smoothed out in the extradimensional geometry, as we demonstrate in examples. We further use this perspective to study the fate of higher-form symmetries in the context of holographic large M averaging where the topological sectors of different large M replicas become dressed by additional extended operators associated with the SymTree. Published by the American Physical Society 2024

Astronomy & Astrophysics↗
DOE OSTI2025

Signal processing and spectral modeling for the BeEST experiment

The Beryllium Electron capture in Superconducting Tunnel junctions (BeEST) experiment searches for evidence of heavy neutrino mass eigenstates in the nuclear electron capture decay of 7 Be by precisely measuring the recoil energy of the 7 Li daughter. In Phase III, the BeEST experiment has been scaled from a singl superconducting tunnel junction (STJ) sensor to a 36-pixel array to increase sensitivity and mitigate gamma-induced backgrounds. Phase III also uses a new continuous data acquisition system that greatly increases the flexibility for signal processing and data cleaning. Here, we have developed procedures for signal processing and spectral fitting that are sufficiently robust to be automated for large datasets. Furthermore, this article presents the optimized procedures before unblinding the majority of the Phase III dataset to search for physics beyond the standard model.

6 ≤ A ≤ 19↗
DOE OSTI2022

Nucleation of Grain Boundary Phases

Here, we derive a theory that describes homogeneous nucleation of grain boundary (GB) phases. Our analysis takes account of the energy resulting from the GB phase junction, the line defect separating two different GB structures, which is necessarily a dislocation as well as an elastic line force due to the jump in GB stresses. The theory provides analytic forms for the elastic interactions and the core energy of the GB phase junction that, along with the change in GB energy, determines the nucleation barrier. We apply the resulting nucleation model to simulations of GB phase transformations in tungsten. Our theory explains why under certain conditions GBs cannot spontaneously change their structure even to a lower energy state.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Quasiparticle Poisoning of Superconducting Qubits from Resonant Absorption of Pair-Breaking Photons

The ideal superconductor provides a pristine environment for the delicate states of a quantum computer: because there is an energy gap to excitations, there are no spurious modes with which the qubits can interact, causing irreversible decay of the quantum state. As a practical matter, however, there exists a high density of excitations out of the superconducting ground state even at ultralow temperature; these are known as quasiparticles. Observed quasiparticle densities are of order 1 μ m - 3 , tens of orders of magnitude greater than the equilibrium density expected from theory. Nonequilibrium quasiparticles extract energy from the qubit mode and can induce dephasing. Here we show that a dominant mechanism for quasiparticle poisoning is direct absorption of high-energy photons at the qubit junction. We use a Josephson junction-based photon source to controllably dose qubit circuits with millimeter-wave radiation, and we use an interferometric quantum gate sequence to reconstruct the charge parity of the qubit. We find that the structure of the qubit itself acts as a resonant antenna for millimeter-wave radiation, providing an efficient path for photons to generate quasiparticles. A deep understanding of this physics will pave the way to realization of next-generation superconducting qubits that are robust against quasiparticle poisoning.

Liu, Chuan-Hong↗
DOE OSTI2024

Phase Pattern Formation in Grain Boundaries

Here, in this Letter, we derive conditions that predict the existence of two-phase periodic-pattern grain boundary structures that are stable against coarsening. While previous research has established that elastic effects can lead to phase pattern formation on crystal surfaces, the possibility of stable grain boundary structures composed of alternating grain boundary phases has not been previously analyzed. Our theory identifies the specific combination of grain boundary and materials properties that enable the emergence of patterned grain boundary states and shows that the dislocation content of grain boundary phase junctions, absent in surface phenomena, weakens the stability of the patterned structures. The predictions of the theory are tested using a model copper grain boundary that exhibits multiple phases and two-phase pattern formation. We discuss how, similarly to surfaces, elastic effects associated with grain boundary phase junctions have profound implications for how grain boundary phases transform.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Real Space Imaging of Field-Driven Decision-Making in Nanomagnetic Galton Boards

A possible spintronic route to hardware implementation for decision-making involves injecting a domain wall into a bifurcated magnetic nanostrip resembling a Y-shaped junction. A decision is made when the domain wall chooses a particular path through the bifurcation. Recently, it was shown that a structure like a nanomagnetic Galton board, which is essentially an array of interconnected Y-shaped junctions, produces outcomes that are stochastic and therefore relevant to artificial neural networks. However, the exact mechanism leading to the robust nature of randomness is unknown. Here, in this study, we directly image the decision-making process in nanomagnetic Galton boards using Lorentz transmission electron microscopy. We identify that the stochasticity in nanomagnetic Galton boards arises as a culmination of (1) the topology of the injected domain wall, (2) dissimilarly sized vertices, and (3) the strength of the applied field. Our results pave the way to a detailed understanding of stochasticity in nanomagnetic networks.

lorentz microscopy↗
DOE OSTI2022

Demand Driven Energy Management for PIPO Auxiliary Power Supply Architecture

In this paper, a demand driven energy management (DDEM) technique is implemented on modular parallel input parallel output DC/DC auxiliary power supply (APS) structure. In this method, modules are brought in/out of the operation making them operate under high loading conditions, avoiding low efficiency under light load. Such a method finds its application in power conservative systems with variable load. Implementation of DDEM and the energy saved is shown using APS comprised of two 15W commercially off-the-shelf DC-DC modules, with 100–1000 VDC input and 24 V output voltage. Along with the DDEM, the lifetime of the power stage devices is controlled minimizing their junction temperature swing through control of cooling system. This control method uses digital twin as interface to virtualize the power devices loading operation/ health condition. Accordingly, no extra sensor or closed loop control required to measure the junction temperature of the devices or feedback the losses to the cooling flow.

Azadeh, Yalda↗
DOE OSTI2024

Optimization of Structurally Enhanced Solder Transient Liquid Phase Bonding

High temperature packaging technologies are a necessity for high temperature capable devices. SAC305 solder has an operational limit of 174°C imposed by creep effects which aligns well with current junction temperature limits of 175°C. Wide band gap semiconductor materials have the potential to reach junction temperatures of up to 800°C that are not currently attainable with significant reliability. Capitalizing on this potential will requires substrates and attachments that can operate well beyond the current 175°C standard. Silver sintering pastes have received widespread interest as a high temperature attachment alternative. However, the process requires high pressure bonding in an inert environment to achieve acceptable bond quality. Transient liquid phase (TLP) sintering is capable of good bond quality without pressure requirements but suffers from low thermal conductivity and only slightly reduced cost compared to silver sintering. SAC305 solder contains the same constituent materials for TLP as available copper-tin TLP sintering paste. By introducing engineered surface structures into the bond, intermetallic formation can be accelerated producing a bond similar to TLP sintering but in an ambient environment and for reduced cost. While this process has been demonstrated, it has not yet been optimized. Currently bonds are formed using a 75 μm stencil on substrate surface structures 24 μm tall, covering 19% of the bonding area. The process takes about 4 hours not including the formation of surface structures. Here, this study will center on the effects of stencil thickness and coating methods. Samples will be analyzed by scanning acoustic microscopy, die shear testing and cross sectional scanning acoustic microscopy.

42 ENGINEERING↗
DOE OSTI2020

Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

Designing and optimizing high switching frequency, ultra-efficient converters requires detailed knowledge of the behavior and parasitic parameters for both active and passive components. Recently, wide bandgap transistors have enabled simultaneous increases in both switching frequency and efficiency due to higher maximum operating junction temperature limits, lower dc on-state resistances, and reduced parasitic inductances and capacitances. Yet, the early acceptance of gallium-nitride (GaN) switches was plagued by detrimental dynamic on-state resistance effects. This complex phenomenon for GaN devices is characterized by deviations in on-state resistance from dc operating characteristics based on design choices such as the magnitude and duration of both voltage and current stress, switching mode, and junction temperature. While device manufacturers have made improvements compared to early generation devices, experimental evidence from a survey of commercial GaN transistors highlight measurable change in on-state resistance still exists due to variations in voltage stress during hard-switching operation. After sharing insights for obtaining low noise measurements, an analysis method along with two metrics are proposed to characterize dynamic on-state resistance measurements for power electronics designers. Furthermore, quantifying the performance of GaN devices with standardized metrics facilitates a fair comparison between different GaN device technologies during converter development, enables manufacturing qualification for GaN switches, and provides a benchmark to catalyze improvement for the next generation of GaN device development.

14 SOLAR ENERGY↗
DOE OSTI2019

Reverse Heterojunction (Al)GaInP Solar Cells for Improved Efficiency at Concentration

Mitigating series resistance is crucial to the efficiency of concentrator solar cells at high current density. Conventional AlGaInP junction designs for the top junction of III-V multijunction cells present a challenging tradeoff between series resistance on the one hand and current collection and voltage on the other hand. In this article we discuss the physics of a reverse heterojunction solar cell that aims to improve on this tradeoff by combining a high bandgap Al 0.18 Ga 0.33 In 0.49 P base and a lower bandgap (Al)GaInP emitter. The high mobility of the emitter leads to a relatively low series resistance, compared with a high bandgap homojunction cell. Furthermore, the electroluminescence spectrum shows emission peaks from both the emitter and base, leading to an open-circuit voltage that is not strictly dominated by either layer. The reverse heterojunction design is increasingly beneficial as the one-sun voltage increases.

14 SOLAR ENERGY↗
DOE OSTI2023

Impact of Irradiation-Induced Filter Heating on Calibration of NIR-Longpass-Filtered Reference Solar Cells

Reference solar cells play a crucial role in determining the performance of photovoltaic (PV) devices. In the performance calibration chain of mainstream single-junction PV technologies, common reference cell types include Si, KG-filtered Si, and GaAs cells. For emerging multijunction (MJ) PV technologies, such as CdTe/Si and perovskite/Si, Si reference cells with colored glass near-infrared-longpass (LP) filters like Schott RG-715 and 850 glass have been proposed. They offer a better spectral response that matches the bottom junctions of the emerging MJs, which could lead to lower uncertainties in performance measurements. However, this article reveals a prominent decrease in short-circuit current (ISC) during National Renewable Energy Laboratory's primary calibration over the course of minutes when using this type of LP-filtered reference cell, which could result in unacceptable measurement errors. Unlike quartz or KG filter glasses, LP colored glass filters demonstrate temperature-sensitive cut-on wavelength. When incident irradiance reaches these LP-filtered reference cells, the increased temperature due to light absorption causes a shift of the cut-on to longer wavelength. As a result, the device I SC exhibits a continuous decrease (approximately a 2.5% drop with RG850 LP filter in a 5-min duration) even when the device temperature is controlled at 25 degrees C. To address the temperature gradient issue between colored glass LP filter and the reference cell, we propose the direct integration of thin-film LP semiconductor layer on reference cells. This type of LP-filter-integrated cell has shown minimal temperature-related I SC variation and can serve as a more reliable reference cell source for accurate performance measurements.

14 SOLAR ENERGY↗
DOE OSTI2026

15.3% AM1.5G Efficiency GaAs Solar Cells Fabricated via an Epitaxy-Free Process

Here, we report simple and potentially low-cost techniques for creating high-quality n-type gallium arsenide (GaAs) and GaAs p/n junctions and fabricate GaAs p/n junction solar cells. Detailed-balance modeling suggests that 20% AM1.5G efficiency p/n homojunction devices may be possible if the surface doping concentration can be limited to values less than ∼ 5 × 10 19 cm −3 . Our process exploits an open-tube, vapor-phase, deposition-free, zinc diffusion technique for forming p-type layers in melt-grown n-GaAs substrates that results in sheet resistances less than 1 kΩ/$\square$. In addition, we have improved the minority carrier diffusion lengths of melt-grown GaAs from less than one micron to over five microns using an open-tube, vacuum-free, annealing process which reduces the density of EL2 midgap defects. Finally, we have combined these advances to fabricate epitaxy-free, GaAs solar cells with a validated AM1.5G efficiency of 15.3%.

14 SOLAR ENERGY↗
DOE OSTI2020

Effects of Reactive Power on Photovoltaic Inverter Reliability and Lifetime

This paper performs research on predicting Photovoltaic (PV) inverters reliability and lifetime based on thermal cycling. Thermal cycling is considered the most important stressors in an inverter system. In order to achieve this, a detailed electro-thermal model of the PV inverter will be developed along with their controllers capable of providing voltage support through reactive power. An in-house inverter was built, and a PV inverter model was developed to match the physical inverter. The PV inverter electrothermal model was validated for different ambient temperatures to match the in-house inverter hardware. The in-house inverter was placed inside a thermal chamber to emulate different ambient temperatures and their losses and temperature rises within the system were measured. After the validation of the model, a reduced order model of the inverter will be implemented to translate the mission profile of ambient temperature and solar irradiance into load profile of junction temperatures of the switches. The junction temperature data will be used to identify the reliability indices and hence predict the useful lifetime of the inverter system. Along with the model to predict useful lifetime of the system, the impact of reactive power on the overall reliability of the system will be studied. The key observation in this paper shows that lifetime of the inverter decreases as the operating power factor moves away from unity.

14 SOLAR ENERGY↗
DOE OSTI2020

Enabling Ultrathin III-V Solar Cells Using Dual Photonic Crystals

III-V materials provide the highest efficiencies, but the higher cost of these materials compared to other alternatives such as silicon has limited their applications. One way of reducing the costs is by minimizing the amount of material needed. In this work, using optical simulations we test light trapping layers in the front and in the back of a GaAs single junction solar cell. By using these layers, we predict that we can obtain near optically thick GaAs single junctions with only 300 nm active material, with maximum calculated J sc of 28.7 mA/cm 2 under the radiative limit.

14 SOLAR ENERGY↗