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At least 703 records · Page 39

On the Development of Order and Interfaces during the Growth of Ultrathin La 2 CuO 4 Films by Molecular Beam Epitaxy

While the atomic structure of interfaces in complex oxide heterostructures created by epitaxial growth has been investigated extensively, few studies have been conducted on how interfaces form and restructure at the initial stage of film growth. The dynamic aspects of the growth behavior can strongly influence the final interfacial atomic structure, which may lead to the emergence of interface-specific properties, such as the rise of interfacial superconductivity between certain Ruddlesden-Popper oxide materials. In this report, the structural development of La2CuO 4 thin films grown by molecular beam epitaxy on a LaSrAlO 4 substrate is investigated by X-ray diffraction measurements with rapid scans over a volume of reciprocal space. This method provides far more detailed information on interface formation than traditional fixed-point measurements. The results show that the atomic structure of the interface becomes fully established after just a single unit cell of growth. Interestingly, restructuring continues to occur within the topmost half to one unit cell of the film during the deposition process. However, diffraction intensity oscillations from both reflection high-energy electron and X-ray measurements stabilize only after the growth of two unit cells, indicating that the growth front morphology continues to evolve until the start of the third unit cell. This multimodal investigation provides insights into the atomic processes taking place during layered oxide interface formation, including the dynamical rearrangement of LaO and CuO 2 layers. Such information is not only relevant to the engineering and optimization of functional layer structures but can also be critical for ultrathin films.

36 MATERIALS SCIENCE↗

Ion Pairing Mediates Molecular Organization Across Liquid/Liquid Interfaces

Liquid/liquid interfaces play a central role in scientific fields ranging from nanomaterial synthesis and soft matter electronics to nuclear waste remediation and chemical separations. This diversity of functions arises from an interface’s ability to respond to changing conditions in its neighboring bulk phases. Understanding what drives this interfacial flexibility can provide novel avenues for designing new functional interfaces. However, limiting this progress is an inadequate understanding of the subtle intermolecular and interphase interactions taking place at the molecular level. Here, we use surface-specific vibrational sum frequency generation spectroscopy combined with atomistic molecular dynamics simulations to investigate the self-assembly and structure of model ionic oligomers consisting of an oligodimethylsiloxane (ODMS) tail covalently attached to a positively charged methyl imidazolium (MIM + ) head group at buried oil/aqueous interfaces. We show how the presence of seemingly innocuous salts can impart dramatic changes to the ODMS tail conformations in the oil phase via specific ion effects and ion-pairing interactions taking place in the aqueous phase. These specific ion interactions are shown to drive enhanced amphiphile adsorption, induce morphological changes, and disrupt emergent hydrogen-bonding structures at the interface. Tuning these interactions allows for independent control over the oligomer structure in the oil phase versus interfacial population changes and represents key mechanistic insight that is needed to control chemical reactions at liquid/liquid interfaces.

36 MATERIALS SCIENCE↗

Synergistic Assembly of Charged Oligomers and Amino Acids at the Air–Water Interface: An Avenue toward Surface-Directed CO 2 Capture

Interfaces are considered a major bottleneck in the capture of CO 2 from air. Efforts to design surfaces to enhance CO 2 capture probabilities are challenging due to the remarkably poor understanding of chemistry and self-assembly taking place at these interfaces. In this report we leverage surface-specific vibrational spectroscopy, Langmuir trough techniques, and simulations to mechanistically elucidate how cationic oligomers can drive surface localization of amino acids (AAs) that serve as CO 2 capture agents speeding up the apparent rate of absorption. We demonstrate how tuning these interfaces provides a means to facilitate CO 2 capture chemistry to occur at the interface, while lowering surface tension and improving transport/reaction probabilities. We show that in the presence of interfacial AA-rich aggregates, one can improve capture probabilities vs that of a bare interface, which holds promise in addressing climate change through the removal of CO 2 via tailored interfaces and associated chemistries.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Spatial Mapping of Thermal Boundary Conductance at Metal–Molybdenum Diselenide Interfaces

Improving the thermal transport across interfaces is a necessary consideration for micro- and nanoelectronic devices and necessitates accurate measurement of the thermal boundary conductance (TBC) and understanding of transport mechanisms. Two-dimensional transition-metal dichalcogenides (TMDs) have been studied extensively for their electrical properties, including the metal–TMD electrical contact resistance, but the thermal properties of these interfaces are significantly less explored irrespective of their high importance in their electronic devices. We isolate individual islands of MoSe 2 grown by chemical vapor deposition using photolithography and correlate the 2D variation of TBC with optical microscope images of the MoSe 2 islands. We measure the 2D spatial variation of the TBC at metal–MoSe 2 –SiO 2 interfaces using a modified time-domain thermoreflectance (TDTR) technique, which requires much less time than full TDTR scans. The thermoreflectance signal at a single probe delay time is compared with a correlation curve, which enables us to estimate the change in the signal with respect to the TBC at the metal–MoSe 2 –SiO 2 interface as opposed to recording the decay of the thermoreflectance signal over delay times of several nanoseconds. The results show a higher TBC across the Ti–MoSe 2 –SiO 2 interface compared to Al–MoSe 2 –SiO 2 . An image-clustering method is developed to differentiate the TBC for different numbers of MoSe 2 layers, which reveals that the TBC in single-layer regions is higher than that in the bilayer. Finally, we perform traditional TDTR measurements over a range of delay times and verify that TBC is higher at the Ti–MoSe 2 –SiO 2 interface compared to Al–MoSe 2 –SiO 2 , highlighting the importance of the choice of metal for heat dissipation at electrical contacts in TMD devices.

22 interfacial↗

Systematic observations of enhanced oil recovery and associated changes at carbonate-brine and carbonate-petroleum interfaces

Enhanced oil recovery (EOR) from carbonates is obtained by injection of controlled ionic strength brines containing “active ions” (e.g., SO 4 2- , Mg 2+ , Ca 2+ ). It is generally believed that this occurs through the interaction of the active ions at the carbonate-brine interface (e.g., within a thin brine layer separating the petroleum and the carbonate phases). Here, in-situ observations show how one active ion, SO 4 2- , alters behavior at the carbonate-petroleum interface. Displacement of petroleum from initially oil-wet carbonate rocks using brines with variable SO 4 concentrations systematically changes oil recovery, in situ contact angles, and connectivity of the oil phase, confirming that the active ion alters interactions at the oil/brine/carbonate interface, as expected. Measurements of model calcite-fluid interfaces show that there is no measurable sorption of SO 4 to carbonate-brine interfaces but reveals that the carbonate-petroleum interface is altered by previous exposure to SO 4 -containing brines. These results suggest that EOR in carbonates is controlled indirectly by active ions. We propose that this may be due to a reduced oleophilicity of the carbonate caused by chemical complexation between the active ion and petroleum’s acidic and basic functional groups. This mechanism explains how both anions and cations act as active ions for EOR in carbonates.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Liquid ToF-SIMS revealing the oil, water, and surfactant interface evolution

Bilge water from ships is regarded as a major pollutant in the marine environment. Bilge water exists in a stable oil-in-water (O/W) emulsion form. However, little is known about the O/W liquid–liquid (l–l) interface. Traditional bulk characterization approaches are not capable of capturing the chemical changes at the O/W l–l interface. Although surfactants are deemed essential in droplet formation, their roles in bilge water stabilization have not been fully revealed. We have utilized novel in situ chemical imaging tools including in situ scanning electron microscopy (SEM) and in situ time-of-flight secondary ion mass spectrometry (ToF-SIMS) to study the evolving O/W interface using a NAVY bilge model for the first time. The droplet size distribution (DSD) does not change significantly without the addition of X-100 surfactants under static or rocking conditions. Both the oil components and the water clusters are shown to evolve over time at the O/W droplet interface by in situ liquid SIMS imaging. Of particular interest to droplet stabilization, the contribution of surfactants to the aged bilge droplets becomes more significant as the droplet size increases. The higher mass surfactant component does not appear on the droplet surface immediately while many lower mass surfactants are solvated inside the droplet. We have provided the first three-dimensional images of the evolving O/W interface and demonstrated that in situ surface chemical mapping is powerful enough to reveal the complex and dynamic l–l interface in the liquid state. Our observational insights suggest that surfactants are important in mediating droplet growth and facilitating effective separation of bilge water emulsion.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Extracellular electron transfer across bio-nano interfaces for CO 2 electroreduction

Acetogenic bacteria represent a class of organisms capable of converting reducing equivalents and carbon dioxide into products with carbon–carbon bonds. Materials-based bio-electrochemical approaches are attractive for supplying biological organisms directly with grid-supplied electrons to convert carbon dioxide to value-added chemicals. Carbon nanotube-modified biocathodes have emerged as promising candidates for microbial electrosynthesis with high yields of carbon product formation, but a fundamental understanding of extracellular charge transfer at this electrode-biofilm interface is still lacking. Here, we utilize solid-state interfaces between semiconducting single-walled carbon nanotubes (s-SWCNT) and a model acetogenic bacterium for mechanistic studies of electro-catalytic CO 2 conversion to acetate. Studies of bacteria/s-SWCNT interactions in a transistor-based device suggest direct extracellular electron transfer (EET) at the bio-nano interface. Deuterium isotope labeling experiments confirmed that the availability of electrochemically produced H 2 as a redox mediator does not limit the efficiency of EET and CO 2 electro-reduction for C. ljungdahlii biofilms, suggesting the primary reducing equivalents are the electrons delivered across the electrode/bacterium interface or involvement of biological redox mediators. Additional isotope labeling studies demonstrate high Faradaic efficiency for CO 2 electro-reduction at the SWCNT/bacterium interface. These results provide important information about EET across the bacterium/material interface in a model biocathode.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Shock wave refraction enhancing conditions on an extended interface

We determined the law of shock wave refraction for a class of extended interfaces with continuously variable gradients. When the interface is extended or when the gas parameters vary fast enough, the interface cannot be considered as sharp or smooth and the existing calculation methods cannot be applied. The expressions we derived are general enough to cover all three types of the interface and are valid for any law of continuously varying parameters. We apply the equations to the case of exponentially increasing temperature on the boundary and compare the results for all three types of interfaces. We have demonstrated that the type of interface can increase or inhibit the shock wave refraction. Our findings can be helpful in understanding the results obtained in energy deposition experiments as well as for controlling the shock-plasma interaction in other settings.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Strain analysis of compositionally tailored interfaces in InAs/GaSb superlattices

The effect of interface composition control on interfacial strain distribution in InAs/GaSb superlattices on (100)-GaSb substrates is investigated by atomic resolution scanning transmission electron microscopy. The interface composition was controlled by either depositing InSb at each interface or soaking the GaSb-on-InAs interface under Sb{sub 2} atmosphere. The strain profiles reveal a distinct difference in the extent to which the superlattice strain is balanced using the two methods. In particular, they indicate that the degree of strain balance achievable with soaking is inherently limited by the arsenic surface coverage during GaSb-on-InAs interface formation, emphasizing the influence of V/III flux ratio at this interface. The results also explain observed X-ray diffraction profiles.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnonic band gaps in two-dimension magnonic crystals with diffuse interfaces

In this paper, the plane wave method is extended to include the diffuse interface in the calculation of the dispersion of spin waves in two-dimension magnonic crystals. The diffuse interfaces with linear and sinusoidal profiles of variation in the spontaneous magnetization and exchange constant are considered and the effects of the thicknesses and profiles of diffuse interfaces on the magnonic band gaps are investigated. The results show that the thicknesses and profiles of diffuse interfaces are clearly seen to play a significant role in determining the size and position of the magnonic band gaps in the both square and triangular lattices in the exchange interaction regime. The smooth (linear or sinusoidal) interface does not lead to disappearance of the band gaps, instead it may lead to larger band gaps than those in the model with sharp (infinitely thin) diffuse interface under certain conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Study on the Ge{sub 1−x}Sn{sub x}/HfO{sub 2} interface and its impacts on Ge{sub 1−x}Sn{sub x} tunneling transistor

In this paper, we employ first-principle calculation to investigate the Ge{sub 1−x}Sn{sub x}/HfO{sub 2} interface, and then evaluate its impacts on Ge{sub 1−x}Sn{sub x} tunneling field-effect transistor (TFET). First-principle calculations of Ge{sub 1−x}Sn{sub x}/HfO{sub 2} interfaces in the oxygen-rich process atmosphere indicate that the interface states originate from the Ge and Sn dangling bond, rather than Hf-bond. The total density of state shows that there are more interface states in the semiconductor bandgap with increasing Sn fraction. By further incorporating the material and interface parameters from density functional theory calculation into advanced device simulation, the electrical characteristics of Ge{sub 1−x}Sn{sub x} TFET are investigated. Removing the Sn atom from the first atom layer of Ge{sub 1−x}Sn{sub x} in device processes is found to be beneficial to reduce the degradations. For the degradation mechanisms, the trap-assisted-tunneling is the dominant mechanism at the low Sn fraction, and enhanced Shockley-Read-Hall recombination induced by traps becomes the dominant mechanism with increasing Sn fraction. The results are helpful for the interface optimization of Ge{sub 1−x}Sn{sub x} TFET.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Local pressure components and interfacial tension at a liquid-solid interface obtained by the perturbative method in the Lennard-Jones system

A classical molecular dynamics simulation was conducted for a system composed of fluid molecules between two planar solid surfaces, and whose interactions are described by the 12-6 Lennard-Jones form. This paper presents a general description of the pressure components and interfacial tension at a fluid-solid interface obtained by the perturbative method on the basis of statistical thermodynamics, proposes a method to consider the pressure components tangential to an interface which are affected by interactions with solid atoms, and applies this method to the calculation system. The description of the perturbative method is extended to subsystems, and the local pressure components and interfacial tension at a liquid-solid interface are obtained and examined in one- and two-dimensions. The results are compared with those obtained by two alternative methods: (a) an evaluation of the intermolecular force acting on a plane, and (b) the conventional method based on the virial expression. The accuracy of the numerical results is examined through the comparison of the results obtained by each method. The calculated local pressure components and interfacial tension of the fluid at a liquid-solid interface agreed well with the results of the two alternative methods at each local position in one dimension. In two dimensions, the results showed a characteristic profile of the tangential pressure component which depended on the direction tangential to the liquid-solid interface, which agreed with that obtained by the evaluation of the intermolecular force acting on a plane in the present study. Such good agreement suggests that the perturbative method on the basis of statistical thermodynamics used in this study is valid to obtain the local pressure components and interfacial tension at a liquid-solid interface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Interface control of ferroelectricity in LaNiO{sub 3}-BaTiO{sub 3} superlattices

LaNiO{sub 3}-BaTiO{sub 3} superlattices with different types of interfaces are studied from first-principles density-functional theory. It is revealed that the ferroelectricity in the superlattice with (NiO{sub 2}){sup −}/(BaO){sup 0} interfaces is enhanced from that of the superlattice with (LaO){sup +}/(TiO{sub 2}){sup 0} interfaces. The origin lies at the polar discontinuity at the interface, which makes the holes localized within the (NiO{sub 2}){sup −}/(BaO){sup 0} interface, but drives a penetration of electrons into BaTiO{sub 3} component near (LaO){sup +}/(TiO{sub 2}){sup 0} interface. Our calculations demonstrate an effective avenue to the robust ferroelectricity in BaTiO{sub 3} ultrathin films.

36 MATERIALS SCIENCE↗

Engineering of silicon/HfO{sub 2} interface by variable energy proton irradiation

Surfaces and interfaces between materials are of paramount importance for various phenomena, such as painting a house, catalyst driven chemical reactions, intricate life processes, corrosion of materials, and fabrication of various semiconductor devices. Interface of silicon or other such substrates with any of the oxides has profound effect on the performance of metal oxide field effect transistors and other similar devices. Since a surface is an abrupt termination of a periodic crystal, surface atoms will have some unsaturated valence electrons and these unsaturated bonds at the semiconductor surface make it chemically highly reactive. Other than annealing, there is not much that can be done to manage these unsaturated bonds. This study was initiated to explore the possibility of repairing these unsaturated dangling bonds that are formed at the silicon and oxide interface during the deposition of oxide layer above silicon, by the use of proton irradiation. In order to improve the interface characteristics, we present a method to modify the interface of silicon and hafnium dioxide after its fabrication, through proton irradiation. Results of the study are promising and probably this method might be used along with other methods such as annealing to modify the interface, after its fabrication.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Reorientation of the ‘free OH’ group in the top-most layer of air/water interface of sodium fluoride aqueous solution probed with sum-frequency generation vibrational spectroscopy

Many experimental and theoretical studies have established the specific anion, as well as cation effects on the hydrogen-bond structures at the air/water interface of electrolyte solutions. However, the ion effects on the top-most layer of the air/water interface, which is signified by the non-hydrogen-bonded so-called ‘free O-H’ group, has not been discussed or studied. In this report, we present the measurement of changes of the orientational angle of the ‘free O-H’ group at the air/water interface of the sodium fluoride (NaF) solutions at different concentrations using the interface selective sum-frequency generation vibrational spectroscopy (SFG-VS) in the ssp and ppp polarizations. The polarization dependent SFG-VS results show that the average tilt angle of the ‘free O-H’ changes from about 35.3 degrees ± 0.5 degrees to 43.4 degrees ± 2.1degrees as the NaF concentration increase from 0 to 0.94M (nearly saturated). Such tilt angle change is around the axis of the other O-H group of the same water molecule at the top-most layer at the air/water interface that is hydrogen-bonded to the water molecules below the top-most layer. These results provide quantitative molecular details of the ion effects of the NaF salt on the structure of the water molecules at the top-most layer of the air/water interfacial, even though both the Na+ cation and the F- anion are believed to be among the most excluded ions from the air/water interface.

air-water interface↗

Symmetry and lattice mismatch induced strain accommodation near and away from correlated perovskite interfaces

Distinct MnO{sub 6} octahedral distortions near and away from the La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/SrTiO{sub 3}(001) (LSMO/STO) interface are quantified using synchrotron x-ray diffraction and dynamical x-ray diffraction simulations. Three structural regions of stress accommodation throughout the film thickness were resolved: near the LSMO/STO interface, intermediate region farther from the interface, and the main layer away from the interface. The results show that within the first two unit cells stress is accommodated by the suppression of octahedral rotations in the film, leading to the expansion of the c-axis lattice parameter. Farther from the interface film structure acquires octahedral tilts similar to thicker perovskite films under tensile stress, leading to a reduced c-axis parameter. We demonstrate that these regions are related to two different strain coupling mechanisms: symmetry mismatch at the interface and lattice mismatch in the rest of the film. The findings suggest new routes for strain engineering in correlated perovskite heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗