SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The service integrity of the bonded interface in solar cell modules used in solar arrays is addressed. The development of AC impedance as a nondestructive evaluation (NDE) methodology for solar arrays is reported along with development of corrosion models and materials selection criteria for corrosion resistant interfaces.
A laser velocimeter (autocovariance) buffer interface (LVABI) was developed to serve as the interface between three laser velocimeter high speed burst counters and a minicomputer. A functional description is presented of the instrument and its unique features which allow the studies of flow velocity vector analysis, turbulence power spectra, and conditional sampling of other phenomena. Typical applications of the laser velocimeter using the LVABI are presented to illustrate its various capabilities.
This specification establishes the requirements, concepts, and preliminary design for a set of software known as the IGDS/TRAP Interface Program (ITIP). This software provides the capability to develop at an Interactive Graphics Design System (IGDS) design station process flow diagrams for use by the NASA Coal Gasification Task Team. In addition, ITIP will use the Data Management and Retrieval System (DMRS) to maintain a data base from which a properly formatted input file to the Time-Line and Resources Analysis Program (TRAP) can be extracted. This set of software will reside on the PDP-11/70 and will become the primary interface between the Coal Gasification Task Team and IGDS, DMRS, and TRAP. The user manual for the computer program is presented.
The preliminary design of the IGDS/TRAP Interface Program (ITIP) is described. The ITIP is implemented on the PDP 11/70 and interfaces directly with the Interactive Graphics Design System and the Data Management and Retrieval System. The program provides an efficient method for developing a network flow diagram. Performance requirements, operational rquirements, and design requirements are discussed along with sources and types of input and destination and types of output. Information processing functions and data base requirements are also covered.
The interfacial structures of radiation hard and soft oxides grown by dry and wet processes on silicon substrates have been examined by high-resolution X-ray photoelectron spectroscopy. It is found that the primary difference in the local atomic structure at the Si/SiO2 interface is the significantly higher concentration of strained 120 deg SiO2 bonds and SiO interfacial species in soft samples. Results of in situ radiation damage experiments using low energy electrons (0-20 eV) are reported which correlate with the presence of a strained layer of SiO2 (20 A) at the interface. The results are interpreted in terms of a structural model for hole and electron trap generation by ionizing radiation.
In connection with the relatively poor insulating characteristics of the native oxides of most III-V compound semiconductors, there has been interest in the development of deposited dielectric layers for surface passivation and MOS device fabrication on III-V compound semiconductor substrates. The chemical system of SiO2 deposited on single-crystal InSb substrates has been proposed for the fabrication of IR CCD. The considered investigation is concerned with a detailed examination of the chemical nature of the interactions between deposited and native oxides using X-ray photoelectron spectroscopy (XPS) in conjunction with a chemical-etching technique for depth profiling. The compositional structure of the interfaces obtained in the SiO2/native oxide/InSb system is derived on the basis of an intensity analysis of XPS spectra. Thermal oxidation of the InSb substrate is found to result in an In-rich native oxide and excess elemental Sb at the native oxide/substrate interface.
Gigantic photoionization was discovered on GaAs-oxide interfaces leading to the discharge of deep surface states with rates exceeding 1000 times those of photoionization transitions to the conduction band. It exhibits a peak similar to acceptor-donor transitions and is explained as due to energy transfer from photo-excited donor-acceptor pairs to deep surface states. This new process indicates the presence of significant concentrations of shallow donor and acceptor levels not recognized in previous interface models.
Concepts developed in study of SiO2/Si interface applied to analysis of native oxide/GaAs interface. High-resolution X-ray photoelectron spectroscopy (XPS) has been combined with precise chemical-profiling technique and resolution-enhancement methods to study stoichiometry of transitional layer. Results are presented in report now available.
The development of a man/machine interface system that can be used to remotely control a system composed of a transporter base and a force-reflecting, survocontrolled manipulator is reported. The concept features the incorporation of totally remote operation. A simulator is build to optimize man/machine interface requirements.
Requirements for standards and guidelines related to user interfaces for interconnecting an Applications Data Service pilot program are discussed. Key elements considered were: (1) dial up procedures, (2) terminals (minimum, desirable, extended capability), (3) common capabilities, (4) language interfaces (query, command, menu), and (5) display capabilities.
Several composite systems made of titanium matrix reinforced with silicon carbide fiber were investigated to obtain a better understanding of composite-degradation mechanisms and to develop techniques to minimize loss of mechanical properties during fabrication and in service. Emphasis was on interface control by fiber or matrix coatings. X-ray diffraction studies on planar samples showed that the formation of titanium silicides was greatly inhibited by the presence of aluminum or Ti3A1 layers at the fiber-matrix interface, with the Ti3A1 being more effective in reducing the reactions. Fiber studies showed that coating the fiber with a 1-micron-thick layer of aluminum improved the as-fabricated strength of a stoichiometric SiC fiber and reduced the fiber degradation during exposure to composite-fabrication conditions. Applying an interfacial barrier by coating the matrix foils instead of the fibers was found to be an effective method for improving composite strength. Reducing the fabrication temperature also resulted in significant improvements in composite strengths. Good-quality, well-consolidated composites were fabricated at temperatures well below those currently used for SiC-Ti composite fabrication.
The valence level spectra of the Ni/Si and Pd/Si systems have been investigated using high resolution X-ray photoelectron spectroscopy. Temperature dependence studies for Ni deposited on thin thermal SiO2 demonstrate the importance of metal aggregation effects in the interpretation of binding energies as chemical shifts. Temperature studies for the Ni/Si system indicate that substantial chemical interaction occurs at the interface at temperatures as low as 100 K. These studies also show the presence of Ni in interstitial voids in the Si near the interface. A comparative study of the core and valence band features for the Ni and Pd silicides provides many valuable insights and a self-consistent picture of the attendent valence charge redistribution and its influence on the observed chemical shifts.
The Sigma/PDP 11 Interface is a general-purpose system for interconnecting a Xerox Sigma series computer and a DEC PDP 11 series computer. Although the unit is designed to operate in a real-time environment, it can be used in nonreal-time modes as well. Several features, designed to facilitate using the system in varied applications are included in the unit; for example, the features can be used to isolate software or hardware faults. This paper contains descriptions of the hardware and software operations of the interface and examples of real-time applications in the research environment at Ames Research Center.
Thin-oxide (40-50 A) metal oxide semiconductor (MOS) structures are shown to exhibit, before large levels of electron tunnel injection, the near-ideal behavior predicted for a uniform trapezoidal barrier with thick-oxide properties. The oscillatory field dependence caused by electron-wave interference at the Si/SiO2 interface suggests an abrupt, one-monolayer barrier transition (approximately 2.5 A) consistent with earlier work. After tunnel injection of 10 to the 17th - 5 x 10 to the 18th electrons/sq cm, the barrier undergoes appreciable degradation, leading to enhanced tunneling conductance. Reproducible behavior is observed among different samples. This effect is found to be consistent with the generation of positive states in the region of the oxide near the Si/SiO2 interface (less than 20 A), where the tunneling electrons emerge into the oxide conduction band.
The transmission of a spherical or plane wave through an arbitrarily curved dielectric interface is solved by the geometrical optics theory. The transmitted field is proportional to the product of the conventional Fresnel's transmission coefficient and a divergence factor (DF), which describes the cross-sectional variation (convergence or divergence) of a ray pencil as the latter propagates in the transmitted region. The factor DF depends on the incident wavefront, the curvatures of the interface, and the relative indices of the two media. Explicit matrix formulas for calculating DF are given, and its physical significance is illustrated via examples.
Memory-interface integrated circuit not only detects errors in data from other circuits but also detects errors within itself. Memory-interface chip encodes 16-bit words with Hamming code for single-error correction or double-error detection. Chip used in fault-tolerant computers under development by NASA.
The latest RF front end built by Burhans (Mini-L-82) was successfully interfaced to the Ohio University LORAN-C receiver. In order for the front end to operate optimally, modifications were made to existing automatic gain control (AGC) circuitry already developed for the Ohio University LORAN-C receiver. The hardware modifications to the AGC and other interface circuitry, as well as some preliminary results are discussed.
The LANDSAT-geographic information system (GIS) interface must summarize the results of the LANDSAT classification over the same cells that serve as geographic referencing units for the GIS, and output these summaries on a cell-by-cell basis in a form that is readable by the input routines of the GIS. The ZONAL interface for cell-oriented systems consists of two primary programs. The PIXCEL program scans the grid of cells and outputs a channel of pixels. Each pixel contains not the reflectance values but the identifier of the cell in which the center of the pixel is located. This file of pixelized cells along with the results of a pixel-by-pixel classification of the scene produced by the LANDSAT analysis system are input to the CELSUM program which then outputs a cell-by-cell summary formatted according to the requirements of the host GIS. Cross-correlation of the LANDSAT layer with the other layers in the data base is accomplished with the analysis and display facilities of the GIS.