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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Topological insulator-metal transition and molecular electronics device based on zigzag phagraphene nanoribbon

Here, we explore the electronic transport properties of a graphene allotrope composed of 5–6-7 carbon aromatic rings called phagraphene and compare with the results of the transition-voltage spectroscopy (TVS) and propose the behavior at low voltage characteristic of a topological insulator. Phagraphene properties were compared to those of graphene in a zigzag nanoribbon configuration, zigzag graphene vs zigzag phagraphene nanoribbon (zzGNR and zzPGNR). The molecular geometry and the electronic properties were calculated by density functional theory (DFT) without spin, and the electronic transport and TVS were obtained by means of DFT combined with non-equilibrium Green´s function when we couple the optimized geometry of zzGNR and zzPGNR to the leads (left and right), forming the molecular junction that will be subjected to the action of an external bias voltage (V e ) to generate the molecular device. The findings exhibit (i) a metal-insulator transition when V e is increased until V e = 1.4 V which corresponds to the nonlinear region (resonance), showing the field effect transistor behaviour for zzGNR junctions; and (ii) two nonlinear regions (two negative differential resistances), showing a resonant tunnel diode behaviour with two operation windows (V e = 0.5 V and V e = 1.7 V) for the zzPGNR junction. In addition, the zzPGNR junction exhibits topological insulator characteristics upon introducing topological defects such as pentagons and heptagons in the hexagonal lattice of graphene, and when V e = 1.7 V, there occurs a topological insulator-metal transition that can be seen in the behaviour of the density of states, transmittance, and frontier molecular orbitals with V e .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

On the design of magnetically insulated transmission lines for z -pinch loads

Many papers have been published on the theory of magnetic insulation and the use of Z flow analysis of magnetically insulated transmission lines (MITL’s). We describe herein a novel design process using the circuit code SCREAMER , for a real-world MITL for z-pinch loads based on the Z flow model of magnetic insulation. In particular, we design a 15-TW, 10-MA, 100 ns double-disk transmission lines using only circuit modeling tools and Z flow analysis of the MITL. Critical issues such as current loss to the anode during the setup of magnetic insulation and the transition from a non-emitting vacuum power feed to a MITL play a large role in the MITL design. This very rapid design process allows us for the first time to explore innovative MITL designs such as variable-impedance MITL’s that provide a significantly lower total inductance and improved energy delivery to the load. In conclusion the tedious process of modeling the final MITL design with highly resolved 2-D and 3-D electromagnetic particle-in-cell codes occurs as a validation step, not as part of the design process.

42 ENGINEERING↗
DOE OSTI2021

Strongly heat-assisted spin–orbit torque switching of a ferrimagnetic insulator

Ferrimagnetic insulators promise low-power and high-speed spintronic applications, thanks to their insulating nature and fast dynamics near compensation points. In a ferrimagnetic insulator/heavy metal heterostructure, we investigate field- and current-induced magnetization switching at various temperatures and observe distinct magnetization switching behaviors owing to spin-orbit torque (SOT) and heating effect. We have realized SOT switching across the magnetization compensation temperature and discovered that the SOT switching is strongly heat-assisted: the temperature is always above the compensation temperature while the SOT switching happens in our case. Moreover, we show that the SOT efficiency is strongly magnetization-dependent by characterizing the current dependence of SOT efficiency and explaining the anomalous SOT switching back phenomena in the presence of a titled external field. Our results reveal the critical role of Joule heating on the dynamics of magnetic insulators and pave the way for the application of spintronic devices based on magnetic insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Proximity-induced anisotropic magnetoresistance in magnetized topological insulators.

Topological insulators (TIs) host spin-momentum locked surface states that are inherently susceptible to magnetic proximity modulations, making them promising for nano-electronic, spintronic, and quantum computing applications. While much effort has been devoted to studying (quantum) anomalous Hall effects in magnetic magnetically doped TIs, the inherent magnetoresistance (MR) properties in magnetic proximity-coupled surface states remain largely unexplored. Here, we directly exfoliate Bi 2 Se 3 TI flakes onto a magnetic insulator, yttrium iron garnet, and measure the MR at various temperatures. We experimentally observe an anisotropic magnetoresistance that is consistent with a magnetized surface state. Our results indicate that the TI has magnetic anisotropy out of the sample plane, which opens an energy gap between the surface states. Additionally, by applying a magnetic field along any in-plane orientation, the magnetization of the TI rotates toward the plane and the gap closes. Consequently, we observe a large (similar to 6.5%) MR signal that is attributed to an interplay between coherent rotation of magnetization within a topological insulator and abrupt switching of magnetization in the underlying magnetic insulator.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

High-electric-field behavior of the metal-insulator transition in TiS3 nanowire transistors

We investigate the behavior of the metal-insulator transition (MIT) in TiS 3 nanowire field-effect transistors, in the strongly nonequilibrium limit that has, thus far, largely been neglected. Under high electric fields within the TiS 3 channel (≤115 kV/cm), we observe the emergence of a critical fixed point, separating insulating and metallic regions in the transfer curves of the device. The critical gate voltage that defines this fixed point evolves systematically with the drain bias (field), allowing us to map out a phase diagram that identifies the conditions for metallicity or for insulating behavior. Dependent upon the choice of the gate voltage used to tune the carrier concentration in the nanowire, the existence of the field-induced MIT allows the TiS 3 to be either insulating or metallic over an extensive range of temperature. The possible connection of this strongly nonequilibrium state to some form of charge density wave is discussed.

2D materials↗
DOE OSTI2024

Transition metals of Pt and Pd on the surface of topological insulator Bi2Se3

Transition metal catalysts supported on topological insulators are predicted to show improved catalytic properties due to the presence of topological surface states, which may float up to the catalysts and provide robust electron transfer. However, experimental studies of surface structures and corresponding catalytic properties of transition metal/topological insulator heterostructures have not been demonstrated so far. Here, we report the structures, chemical states, and adsorption behaviors of two conventional transition metal catalysts, Pt and Pd, on the surface of Bi2Se3, a common topological insulator material. We reveal that Pt forms nanoparticles on the Bi2Se3 surface. Moreover, the interaction between Pt and surface Se is observed. Furthermore, thermal dosing of O2 onto the Pt/Bi2Se3 heterostructure leads to no oxygen adsorption. Detailed scanning tunneling microscopy study indicates that Pt transforms into PtSe2 after the thermal process, thus preventing O2 from adsorption. For another transition metal Pd, it exhibits approximate layer-island growth on Bi2Se3, and Pd–Se interaction is also observed. Our work provides significant insights into the behaviors of transition metals on top of a common topological insulator material and will assist in the future design of catalysts built with topological materials.

Chemistry↗
DOE OSTI2026

Nonlinear electrical transport near the metal–insulator transition in V 4 O 7 thin films

Nonlinear electrical transport associated with correlated electronic states has been widely investigated in transition-metal oxides near metal–insulator transitions. Here, in this study, we investigate nonlinear transport and threshold switching in sputter-deposited V 4 O 7 thin films grown on fused silica substrates. Temperature-dependent transport measurements show a metal–insulator transition near 240 K with negligible thermal hysteresis, defining the temperature scale that governs the nonlinear electrical response. Current–voltage measurements reveal reproducible bipolar threshold switching over a broad temperature range, with the threshold voltage decreasing systematically as the transition temperature is approached. Electrothermal finite-element simulations reproduce the measured switching characteristics and show that switching occurs when localized Joule heating drives a confined region of the device toward the transition temperature. The simulated peak local temperature at threshold lies close to the intrinsic metal–insulator transition temperature of V 4 O 7 , establishing that the nonlinear electrical response originates from electrothermal feedback acting on the strongly temperature-dependent conductivity near the transition. These results identify V 4 O 7 thin films as a model correlated-oxide system in which volatile threshold switching emerges from proximity to an extended metal–insulator transition.

25 ENERGY STORAGE↗
DOE OSTI2020

Metallic surface states in a correlated d-electron topological Kondo insulator candidate FeSb 2

The resistance of a conventional insulator diverges as temperature approaches zero. The peculiar low-temperature resistivity saturation in the 4f Kondo insulator (KI) SmB 6 has spurred proposals of a correlation-driven topological Kondo insulator (TKI) with exotic ground states. However, the scarcity of model TKI material families leaves difficulties in disentangling key ingredients from irrelevant details. Here we use angle-resolved photoemission spectroscopy (ARPES) to study FeSb 2 , a correlated d-electron KI candidate that also exhibits a low-temperature resistivity saturation. On the (010) surface, we find a rich assemblage of metallic states with two-dimensional dispersion. Measurements of the bulk band structure reveal band renormalization, a large temperature-dependent band shift, and flat spectral features along certain high-symmetry directions, providing spectroscopic evidence for strong correlations. Our observations suggest that exotic insulating states resembling those in SmB 6 and YbB 12 may also exist in systems with d instead of f electrons.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Mapping out the emergence of topological features in the highly alloyed topological Kondo insulators Sm 1-$x$ M $x$ B 6 ( M =Eu, Ce)

SmB 6 is a strongly correlated material that has been attributed as a topological insulator and a Kondo insulator. Recent studies have found the topological surface states and low temperature insulating character to be profoundly robust against magnetic and nonmagnetic impurities. Here, we use angle resolved photoemission spectroscopy to chart the evolution of topologically linked electronic structure features versus magnetic doping and temperature in Sm 1-$x$ M $x$ B 6 ( M =Eu, Ce). Topological coherence phenomena are observed out to ~30% Eu and 50% Ce concentrations that represent extreme nominal hole and electron doping, respectively. Finally, theoretical analysis reveals that a recent redesignation of the topologically inverted band symmetries provides a natural route to reconciling the persistence of topological surface state emergence even as the insulating gap is lost through decoherence.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Light-driven permanent transition from insulator to conductor

The transition from insulator to conductor can be realized in some materials but requires modification of both the arrangement of atoms and their electronic configurations. This is often achieved by doping. Here we reveal a different mechanism the lattice may adopt to induce such a transition. Experiments showed the surprising finding that limited exposure to subband-gap light caused a permanent transition from an insulator state to a conductor state in the insulating oxide Ga 2 O 3 , with a nine orders of magnitude increase in electronic conduction. Furthermore, annealing up to 400 °C did not suppress or decrease the induced conductivity. Photoexcitation by light-induced modification in the charge state of defects and subsequent lattice distortion around them was suggested to be the underlying mechanism behind this transition. Density functional theory calculations confirmed that modifying the charge state of defects leads to redistribution of the localized electrons and massive structural distortion in the surrounding lattice, causing large shifts in the density of states and introducing new states with shallower energy levels. Both experimental and theoretical results revealed the introduction of stable shallow energy levels, explaining the mechanism behind the transition from an insulator to a conductor state by light. We suggest that this mechanism may occur in other wide band-gap metal oxides leading to drastic modification in their electronic properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Possible topological superconductivity in the topological crystalline insulator $\mathrm{(Pb_{1-x} Sn_x)_{1-y}In_yTe}$

Superconductivity in topological insulators is expected to show very unconventional features such as a $p+ip$ order parameter, Majorana fermions, etc. However, intrinsic superconductivity has been observed in a very limited number of materials in which the pairing symmetry is still a matter of debate. Here, we study the topological crystalline insulator (TCI) $\mathrm{(Pb_{1-x} Sn_x)_{1-y}In_yTe}$, for which a peculiar insulator to superconductor transition was previously reported near the gap inversion transition, where the system is nearly a three-dimensional Dirac semimetal. Both the existence of superconductivity near the three-dimensional Dirac semimetal and the occurrence of an insulator to superconductor transition in an isotropic material are highly unusual. We suggest that the observed phenomena are related to the intrinsic instability of a three-dimensional Dirac semimetal state in $\mathrm{(Pb_{1-x} Sn_x)_{1-y}In_yTe}$ and “flattening” of the bulk valence and conduction bands as they acquire a Mexican-hat-like dispersion on the inverted side of the phase diagram. Importantly, this favors the pairing instability if the chemical potential is pinned to these flat regions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Role of magnetic and structural symmetry breaking in forming the Mott insulating gap in Nb 3 ⁢Cl 8

The α-phase of the gapped insulator Nb 3 Cl 8 has recently emerged as the long-sought critical testing bed for examining the importance of strong interelectronic correlation vs symmetry breaking in understanding insulation of such Mott compounds. Structural symmetry breaking detected by density functional theory (DFT) energy lowering (such as dimer formation, disproportionation, or Jahn-Teller distortions) explains insulation in both d-electron Mott-like systems and in non-d-electron cases without recourse to strong correlation. Yet, in Nb 3 Cl 8 , structural symmetry breaking alone (viz. formation of Nb trimers) fails to explain insulation, leading instead to a partially occupied metallic flat band, in contrast with experimental observations. We examine the role of magnetic symmetry breaking, noting that Nb 3 Cl 8 is an observed paramagnet (not an antiferromagnet), thus potentially carrying also short-range ordered magnetic moments. Describing the latter as a polymorphous distribution of nonzero local moments with total zero net magnetization is demonstrated to lower the DFT total energy, while gapping the system without recourse to strong correlation or long-range magnetic order. This suggests that degeneracy removal by symmetry breaking in mean-field-like approaches—either structural, or magnetic, or both—can reduce or eliminate the need for strong correlation, allowing the use of DFT for such Mott systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb 1-x Sn x Te

Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it has proven difficult to achieve the high bulk resistivity that would allow surface states to dominate the transport properties over a substantial temperature range. Here we report a series of indium-doped Pb 1-x Sn x Te compounds that manifest huge bulk resistivities together with evidence consistent with the topological character of the surface states for x ≳ 0.35, based on thickness-dependent transport studies and magnetoresistance measurements. For these bulk-insulating materials, the surface states determine the resistivity for temperatures beyond 20 K.

Zhong, Ruidan↗
DOE OSTI2015

Spin-orbit driven magnetic insulating state with J eff =1/2 character in a 4d oxide

The unusual magnetic and electronic ground states of 5d iridates has been shown to be driven by intrinsically enhanced spin-orbit coupling (SOC). The influence of appreciable but reduced SOC in creating the manifested magnetic insulating states in 4d oxides is less clear, with one hurdle being the existence of such compounds. Here we present experimental and theoretical results on Sr 4 RhO 6 that reveal SOC dominated behavior. Neutron measurements show the octahedra are both spatially separated and locally ideal, making the electronic ground state susceptible to alterations by SOC. Magnetic ordering is observed with a similar structure to an analogous J eff =1/2 Mott iridate. We consider the underlying role of SOC in this rhodate with density functional theory and x-ray absorption spectroscopy and find a magnetic insulating ground state with J eff =1/2 character.The unusual magnetic and electronic ground states of 5d iridates have been shown to be driven by intrinsically enhanced spin-orbit coupling (SOC). The influence of appreciable but reduced SOC in creating the manifested magnetic insulating states in 4d oxides is less clear, with one hurdle being the existence of such compounds. Here, we present experimental and theoretical results on Sr 4 RhO 6 that reveal SOC dominated behavior. Neutron measurements show the octahedra are both spatially separated and locally ideal, making the electronic ground state susceptible to alterations by SOC. Magnetic ordering is observed with a similar structure to an analogous J eff =1/2 Mott iridate. We consider the underlying role of SOC in this rhodate with density functional theory and x-ray absorption spectroscopy, and find a magnetic insulating ground state with J eff =12 character.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2016

Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridate Sr 0.94 Ir 0.78 O 2.68 single crystals

The orthorhombic perovskite SrIrO 3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose an insulating state. Here, we report results of our investigation of bulk single-crystal Sr 0.94 Ir 0.78 O 2.68 or Ir-deficient, orthorhombic perovskite SrIrO 3 . It retains the same crystal structure as stoichiometric SrIrO 3 but exhibits a sharp, simultaneous antiferromagnetic (AFM) and metal-insulator (MI) transition occurring in the basal-plane resistivity at 185 K. Above it, the basal-plane resistivity features an extended regime of almost linear temperature dependence up to 800 K but the strong electronic anisotropy renders an insulating behavior in the out-of-plane resistivity. The Hall resistivity undergoes an abrupt sign change and grows below 40 K, which along with the Sommerfeld constant of 20 mJ/mol K 2 suggests a multiband effect. All results including our first-principles calculations underscore a delicacy of the paramagnetic, metallic state in SrIrO 3 that is in close proximity to an AFM insulating state. The contrasting ground states in isostructural Sr 0.94 Ir 0.78 O 2.68 and SrIrO 3 illustrate a critical role of lattice distortions and Ir deficiency in rebalancing the ground state in the iridates. Finally, the concurrent AFM and MI transitions reveal a direct correlation between the magnetic transition and formation of an activation gap in the iridate, which is conspicuously absent in Sr 2 IrO 4 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Topological semimetal to insulator quantum phase transition in the Zintl compounds B a 2 X ( X = Si , Ge )

By first-principles calculations, we find that Ba 2 X (X = Si, Ge) hosts a topological semimetal phase with one nodal ring in the k x = 0 plane, which is protected by the glide mirror symmetry when spin-orbit coupling (SOC) is ignored. The corresponding drumheadlike surface flat band appears on the (100) surface in surface Green's function calculation. Furthermore, a topological-semimetal-to-insulator transition is found. The nodal line semimetal would evolve into a topological insulator as SOC is turned on. The topologically protected metallic surface states emerge around the Γ point, which could be tuned into the topologically trivial insulator state by more than 3% hydrostatic strain. These results reveal a category of materials showing quantum phase transition between topological semimetal and insulator, and tunability through elastic strain engineering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Deficiency of the bulk spin Hall effect model for spin-orbit torques in magnetic-insulator/heavy-metal heterostructures

Electrical currents in a magnetic-insulator/heavy-metal heterostructure can induce two simultaneous effects, namely, spin Hall magnetoresistance (SMR) on the heavy-metal side and spin-orbit torques (SOTs) on the magnetic-insulator side. Within the framework of a pure spin current model based on the bulk spin Hall effect (SHE), the ratio of the spin Hall-induced anomalous Hall effect (SH-AHE) to SMR should be equal to the ratio of the fieldlike torque (FLT) to the dampinglike torque (DLT). We perform a quantitative study of SMR, SH-AHE, and SOTs in a series of thulium iron garnet/platinum or Tm 3 Fe 5 O 12 /Pt heterostructures with different Tm 3 Fe 5 O 12 thicknesses, where Tm 3 Fe 5 O 12 is a ferrimagnetic insulator with perpendicular magnetic anisotropy. We find the ratio between the measured effective fields of FLT and DLT is at least two times larger than the ratio of the SH-AHE to SMR. In addition, the bulk SHE model grossly underestimates the spin-torque efficiency of FLT. Our results reveal deficiencies of the bulk SHE model and also address the importance of interfacial effects such as the Rashba and magnetic proximity effects in magnetic-insulator/heavy-metal heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Superconductor to weak-insulator transitions in disordered tantalum nitride films

Here, we study the two-dimensional superconductor-insulator transition (SIT) in thin films of tantalum nitride. At zero magnetic field, films can be disorder-tuned across the SIT by adjusting thickness and film stoichiometry; insulating films exhibit classical hopping transport. Superconducting films exhibit a magnetic-field-tuned SIT, whose insulating ground state at high field appears to be a quantum-corrected metal. Scaling behavior at the field-tuned SIT shows classical percolation critical exponents zν ≈ 1.3, with a corresponding critical field H c << H c2 , the upper critical field. The Hall effect exhibits a crossing point near H c , but with a nonuniversal critical value ρ c xy comparable to the normal-state Hall resistivity. We propose that high-carrier-density metals will always exhibit this pattern of behavior at the boundary between superconducting and (trivially) insulating ground states.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗