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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Plasma screening in mid-charged ions observed by K-shell line emission

Dense plasma environment affects the electronic structure of ions via variations of the microscopic electrical fields, also known as plasma screening. This effect can be either estimated by simplified analytical models, or by computationally expensive and to date unverified numerical calculations. We have experimentally quantified plasma screening from the energy shifts of the bound-bound transitions in matter driven by the x-ray free electron laser (XFEL). This was enabled by identification of detailed electronic configurations of the observed Kα, Kβ and Kγ lines. This work paves the way for improving plasma screening models including connected effects like ionization potential depression and continuum lowering, which will advance the understanding of atomic physics in the Warm Dense Matter regime.

Physics - Plasma physics↗
DOE OSTI2023

Learning effective SDEs from Brownian dynamic simulations of colloidal particles

We construct a reduced, data-driven, parameter dependent effective stochastic differential equation (eSDE) for electric-field mediated colloidal crystallization using data obtained from Brownian dynamics simulations. We use diffusion maps (a manifold learning algorithm) to identify a set of useful latent observables. In this latent space we identify an eSDE using a deep learning architecture inspired by numerical stochastic integrators and compare it with the traditional Kramers–Moyal expansion estimation. We show that the obtained variables and the learned dynamics accurately encode the physics of the Brownian dynamic simulations. We further illustrate that our reduced model captures the dynamics of corresponding experimental data. Further, our dimension reduction/reduced model identification approach can be easily ported to a broad class of particle systems dynamics experiments/models.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Control of liquid crystals combining surface acoustic waves, nematic flows, and microfluidic confinement

The optical properties of liquid crystals serve as the basis for display, diagnostic, and sensing technologies. Such properties are generally controlled by relying on electric fields. In this work, we investigate the effects of microfluidic flows and acoustic fields on the molecular orientation and the corresponding optical response of nematic liquid crystals. Several previously unknown structures are identified, which are rationalized in terms of a state diagram as a function of the strengths of the flow and the acoustic field. The new structures are interpreted by relying on calculations with a free energy functional expressed in terms of the tensorial order parameter, using continuum theory simulations in the Landau-de Gennes framework. Taken together, the findings presented here offer promise for the development of new systems based on combinations of sound, flow, and confinement.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2024

Magnet-in-ferroelectric crystals exhibiting photomultiferroicity

Growing crystallographically incommensurate and dissimilar organic materials is fundamentally intriguing but challenging for the prominent cross-correlation phenomenon enabling unique magnetic, electronic, and optical functionalities. Here, we report the growth of molecular layered magnet-in-ferroelectric crystals, demonstrating photomanipulation of interfacial ferroic coupling. The heterocrystals exhibit striking photomagnetization and magnetoelectricity, resulting in photomultiferroic coupling and complete change of their color while inheriting ferroelectricity and magnetism from the parent phases. Under a light illumination, ferromagnetic resonance shifts of 910 Oe are observed in heterocrystals while showing a magnetization change of 0.015 emu/g. In addition, a noticeable magnetization change (8% of magnetization at a 1,000 Oe external field) in the vicinity of ferro-to-paraelectric transition is observed. The mechanistic electric-field-dependent studies suggest the photoinduced ferroelectric field effect responsible for the tailoring of photo-piezo-magnetism. The crystallographic analyses further evidence the lattice coupling of a magnet-in-ferroelectric heterocrystal system.

42 ENGINEERING↗
DOE OSTI2022

Large magnetoelectric resistance in the topological Dirac semimetal α-Sn

The spin-momentum locking of surface states in topological materials can produce a resistance that scales linearly with magnetic and electric fields. Such a bilinear magnetoelectric resistance (BMER) effect offers a new approach for information reading and field sensing applications, but the effects demonstrated so far are too weak or for low temperatures. This article reports the first observation of BMER effects in topological Dirac semimetals; the BMER responses were measured at room temperature and were substantially stronger than those reported previously. The experiments used topological Dirac semimetal α-Sn thin films grown on silicon substrates. The films showed BMER responses that are 10 6 times larger than previously measured at room temperature and are also larger than those previously obtained at low temperatures. These results represent a major advance toward realistic BMER applications. Significantly, the data also yield the first characterization of three-dimensional Fermi-level spin texture of topological surface states in α-Sn.

36 MATERIALS SCIENCE↗
NASA NTRS1971

Electrical properties of tellurium thin films

Evaporated tellurium thin films electric properties, discussing fabrication techniques, temperature dependence, field effect and Hall mobilities, threshold voltage and stability

Dutton, R. W.↗
NASA NTRS1971

Electron tunneling as a basis for semiconduction in proteins

Electron tunneling is investigated as a possible mechanism for the conduction of electrical current in solids composed of protein molecules. An intermolecular potential barrier is assumed which takes into account the applied electric field and the possibility of image charge effects. The WKB approximation is used to calculate the net tunneling current density and resulting conductivity. The results suggest that electron tunneling per se is not a suitable mechanism for explaining the observed conductivities in such materials.

Flax, L.↗
NASA NTRS1974

Electron collection theory for a D-region subsonic blunt electrostatic probe

Blunt probe theory for subsonic flow in a weakly ionized and collisional gas is reviewed, and an electron collection theory for the relatively unexplored case, Deybye length approximately 1, which occurs in the lower ionosphere (D-region), is developed. It is found that the dimensionless Debye length is no longer an electric field screening parameter, and the space charge field effect can be negelected. For ion collection, Hoult-Sonin theory is recognized as a correct description of the thin, ion density-perturbed layer adjacent the blunt probe surface. The large volume with electron density perturbed by a positively biased probe renders the usual thin boundary layer analysis inapplicable. Theories relating free stream conditions to the electron collection rate for both stationary and moving blunt probes are obtained. A model based on experimental nonlinear electron drift velocity data is proposed. For a subsonically moving probe, it is found that the perturbed region can be divided into four regions with distinct collection mechanisms.

Wai-Kwong Lai, T.↗
NASA NTRS1979

Plasma waves near Venus - Initial observations

The Pioneer Venus electric field detector was used to observe significant effects of the interaction of the solar wind with the ionosphere of Venus all along the orbiter trajectory. Information on sharp and diffuse shock structures and on plasma oscillations emitted by suprathermal electrons beyond the bow shock is considered, and wave particle interaction phenomena important near the boundary of the dayside ionosphere are noted.

Scarf, F. L.↗
NASA NTRS1979

A quasi-static model of global atmospheric electricity. I - The lower atmosphere

A quasi-steady model of global lower atmospheric electricity is presented. The model considers thunderstorms as dipole electric generators that can be randomly distributed in various regions and that are the only source of atmospheric electricity and includes the effects of orography and electrical coupling along geomagnetic field lines in the ionosphere and magnetosphere. The model is used to calculate the global distribution of electric potential and current for model conductivities and assumed spatial distributions of thunderstorms. Results indicate that large positive electric potentials are generated over thunderstorms and penetrate to ionospheric heights and into the conjugate hemisphere along magnetic field lines. The perturbation of the calculated electric potential and current distributions during solar flares and subsequent Forbush decreases is discussed, and future measurements of atmospheric electrical parameters and modifications of the model which would improve the agreement between calculations and measurements are suggested.

Hays, P. B.↗
NASA NTRS1984

Ionosphere-magnetosphere coupling and convection

The following international Magnetospheric Study quantitative models of observed ionosphere-magnetosphere events are reviewed: (1) a theoretical model of convection; (2) algorithms for deducing ionospheric current and electric-field patterns from sets of ground magnetograms and ionospheric conductivity information; and (3) empirical models of ionospheric conductances and polar cap potential drop. Research into magnetic-field-aligned electric fields is reviewed, particularly magnetic-mirror effects and double layers.

Wolf, R. A.↗
NASA NTRS1985

Radiation damage in high-resistivity silicon solar cells

High-resistivity silicon solar cells exhibit reduced radiation damage when light is incident on the gridded back surface. Under back illumination, radiation damage decreases as cell resistivity increases; under front illumination, radiation damage increases as cell resistivity increases. Thin back-illuminated cells outperform conventional 10 omega cm 50 and 200 micron cells at low 1-MeV electron fluences. However, at higher fluences, the conventional cells exhibit superior radiation resistance. This is attributed to the low BOL diffusion lengths observed in the thin, sack-illuminated cell. These results are discussed in terms of injected charge distributions, electric fields in the cell base, and the effects of a dominant boron-oxygen defect.

Weinberg, I.↗
NASA NTRS1993

Microchannel plate modal gain variations with temperature

Measurements of the modal gain of two high-gain curved-channel microchannel plates (MCPs) at various operating temperatures are presented. Both MCPs were fabricated from the Long Life glass with 12-micron diam channels on 15-micron centers. The modal gain was found to decrease with increasing temperature at a rate of -0.1 percent C. This reduction of gain with temperature is attributed primarily to an axial temperature gradient along each MCP channel creating a nonuniform electric field within the channel that lowers the effective output gain. A lowering of the secondary electron yield resulting from increased phonon scattering of secondary electrons released within the walls of the MCP channels was assessed, but was found to have a negligible contribution to the drop in gain with temperature.

Slater, David C.↗
NASA NTRS1995

Superconducting Field-Effect Transistors

Devices offer switching speeds greater than semiconducting counterparts. High-Tc superconducting field-effect transistors (SUPEFETs) investigated for use as electronic switches in delay-line-type microwave phase shifters. Resemble semiconductor field-effect transistors in some respects, but their operation based on different principle; namely, electric-field control of transition between superconductivity and normal conductivity.

Bhasin, Kul↗
NASA NTRS2002

Methods for growth of relatively large step-free SiC crystal surfaces

A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

Neudeck, Philip G.↗
NASA NTRS2012

Development of Resistive Electrode Gas Electron Multiplier (RE-GEM)

We successfully produced Resistive-Electrode Gas Electron Multiplier (RE-GEM) which has resistive electrodes instead of the metal ones which are employed for the standard GEM foils. RE-GEM has a resistive electrode of 25 micron-thick and an insulator layer of 100 micron-thick. The hole structure of RE-GEM is a single conical with the wider and narrower hole diameters of 80 micron and 60 micron, respectively. A hole pitch of RE-GEM is 140 micron. We obtained the maximum gain of about 600 and the typical energy resolution of about 20% (FWHM) at an applied voltage between the resistive electrodes of 620 V, using a collimated 8 keV X-rays from a generator in a gas mixture of 70% Ar and 30% CO2 by volume at the atmospheric pressure. We measured the effective gain as a function of the electric field of the drift region and obtained the maximum gain at an drift field of 0.5 kV/cm.

detectors↗
NASA NTRS2006

SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 C

While there have been numerous reports of short-term transistor operation at 500 degree C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 degree C to be considered viable for most envisioned applications. This paper reports the development of Silicone Carbi field effect transistors capable of long-term electrical operation at 500 degree C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 degree C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 degree C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 degree C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 degree C electrical operation.

Neudeck, Philip G.↗