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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Insights into the Complexation of Actinides by Diethylenetriaminepentaacetic Acid from Characterization of the Americium(III) Complex

Diethylenetriaminepentaacetic acid (DTPA) is a frequently used chelator in the nuclear and medical industries, especially for the complexation of trivalent actinides. However, structural data on these complexes in the solid-state have long remained elusive. Herein, a detailed structural analysis of the presented crystal structures of [C(NH 2 ) 3 ] 4 [Nd(DTPA)] 2 · n H 2 O and [C(NH 2 ) 3 ] 4 [Am(DTPA)] 2 · n H 2 O, where [C(NH 2 ) 3 ] + is guanidinium, details the subtle differences in the Lewis acidity between a lanthanide/actinide pair of similar ionic sizes. Contractions in nitrogen–metal bond lengths between neodymium(III) and americium(III) were observed, while the metal–oxygen bonds remained relatively consistent, highlighting the marginal favorability for actinide complexation over the lanthanides with moderately soft N-donors. Spectroscopic analysis shows significant splitting of many transitions and relatively strong electronic interactions with traditionally low-intensity transitions in the americium complex, as is demonstrated in the 7 F 0 → 7 F 5 transitions. Pressure-induced spectroscopic analysis showed surprisingly little effect on the americium complex, with 5 f →5 f transitions either not shifting or marginally shifting from 2 to 3 nm at 11.93 ± 0.06 GPa─atypical of a soft, N-donor americium complex under pressure. Finally, large voids occupied by water molecules in between the complexes within the crystal structure may be responsible for the lack of pressure response in the 5 f →5 f transitions.

absorption spectroscopy↗
DOE OSTI2023

Anomalous magnetoresistance by breaking ice rule in Bi2Ir2O7/Dy2Ti2O7 heterostructure

Abstract While geometrically frustrated quantum magnets host rich exotic spin states with potentials for revolutionary quantum technologies, most of them are necessarily good insulators which are difficult to be integrated with modern electrical circuit. The grand challenge is to electrically detect the emergent fluctuations and excitations by introducing charge carriers that interact with the localized spins without destroying their collective spin states. Here, we show that, by designing a Bi 2 Ir 2 O 7 /Dy 2 Ti 2 O 7 heterostructure, the breaking of the spin-ice rule in insulating Dy 2 Ti 2 O 7 leads to a charge response in the conducting Bi 2 Ir 2 O 7 measured as anomalous magnetoresistance during the field-induced Kagome ice-to-saturated ice transition. The magnetoresistive anomaly also captures the characteristic angular and temperature dependence of this ice-rule-breaking transition, which has been understood as magnetic monopole condensation. These results demonstrate a novel heteroepitaxial approach for electronically probing the transition between exotic insulating spin states, laying out a blueprint for the metallization of frustrated quantum magnets.

36 MATERIALS SCIENCE↗
NASA NTRS1983

The low-lying 2-sigma-minus states of OH

The configuration-interaction method is used to determine the electronic wave functions of the two lowest 2-sigma-minus states of OH using four different atomic orbital basis sets. Potential energy curves, transition moments, oscillator strengths, and photodissociation cross sections are obtained. Electronic transition dipole moments connecting the excited 1 2-sigma-minus and 2(D)2-sigma-minus states with each other and with the ground chi-2-pi state are presented as functions of internuclear distance. The theoretical absorption oscillator strengths for the D-2-sigma-minus(v prime = 0) from chi-2-pi(v double prime = 0) transition are in good agreement with the empirical value derived from astronomical measurement. The photodissociation cross sections for absorption from the v prime = 0, 1, and 2 levels of the ground state into the continuum of the 1 2-sigma-minus state are calculated, and the interstellar and cometary photodissociation rates are derived.

Van Dishoeck, E. F.↗
DOE OSTI2023

Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions

Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence of a scaling picture with a single extended state, characterized by a power-law divergence of the localization length in the zero-temperature limit. Experimentally, scaling has been investigated via measuring the temperature dependence of plateau-to-plateau transitions between the integer quantum Hall states (IQHSs), yielding a critical exponent κ ≃ 0.42. Here, in this study, we report scaling measurements in the fractional quantum Hall state (FQHS) regime where interaction plays a dominant role. Our Letter is partly motivated by recent calculations, based on the composite fermion theory, that suggest identical critical exponents in both IQHS and FQHS cases to the extent that the interaction between composite fermions is negligible. The samples used in our experiments are two-dimensional electron systems confined to GaAs quantum wells of exceptionally high quality. We find that κ varies for transitions between different FQHSs observed on the flanks of Landau level filling factor v = 1/2 and has a value close to that reported for the IQHS transitions only for a limited number of transitions between high-order FQHSs with intermediate strength. We discuss possible origins of the nonuniversal κ observed in our experiments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Preferential hole defect formation in monolayer W Se 2 by electron-beam irradiation

Monolayer transition-metal dichalcogenides (TMDCs) have been extensively studied due to their wide range of physical properties and applications. It has been demonstrated that the electron beam in a transmission electron microscope (TEM) or scanning TEM (STEM) generates chalcogen vacancies that agglomerate into dispersed linelike or holelike defects. Here we employ a STEM electron beam and demonstrate that, in WSe 2 , beam-induced chalcogen vacancies initially form certain dispersed multivacancy structures, as seen in TMDCs in prior work. However, with suitable control of the STEM focused electron beam, these multivacancies gradually evolve into a dense network of ten-, 12-, 14-, and 16-member ring round holes, whereas the same process leads predominantly to chalcogen-vacancy line defects in other trigonal-prismatic TMDCs. Density functional theory calculations find that the underlying atomic-scale processes lead preferentially to defect structures that lower the total energy so that we are able to track the formation of the observed multivacancy complexes, which then lead to the formation of dense large round holes in WSe 2 . The same processes in WS 2 , however, are energetically unfavorable, while linear multivacancy defects are preferred, as observed. The demonstrated control of the formation of unique high-density round holes in WSe 2 has potential for applications such as atomic and molecular sieving.

36 MATERIALS SCIENCE↗
NASA NTRS1986

Differential electron scattering cross sections for the first optically forbidden and resonance transitions in Mg II, Zn II and Cd II

Differential electron scattering cross sections have been measured for dipole-forbidden and resonance transitions in Mg II, Zn II and Cd II in the angular range theta = 4-17 deg at 50 eV. These provide the first recorded angular distributions for an optically forbidden transition. It is found that while the cross section for excitation of the 4s (2)S-3d(9)4s(2) (2)D transition in Zn II is small, those for the 3s (2)S-3d (2)D, 4s (2)S (unresolved lines) in Mg II, and the 5s (2)S-4d(9)5s(2) D in Cd II are comparable in magnitude with the cross sections for resonance excitation. In addition, for Cd II it is found that the allowed and forbidden transitions have very similar angular distributions, and it is proposed that excitation to the 2D state may be dominated by a virtual 'double-dipole' transition via the 2P state. Also, the total excitation cross section of the resonance 2P state in Cd II is a factor of four higher than that predicted by the Gaunt factor approximation, suggesting that the accepted value for the oscillator strength may be too low.

Williams, I. D.↗
DOE OSTI2022

Surface plasmons induce topological transition in graphene/α-MoO3 heterostructures

Abstract Polaritons in hyperbolic van der Waals materials—where principal axes have permittivities of opposite signs—are light-matter modes with unique properties and promising applications. Isofrequency contours of hyperbolic polaritons may undergo topological transitions from open hyperbolas to closed ellipse-like curves, prompting an abrupt change in physical properties. Electronically-tunable topological transitions are especially desirable for future integrated technologies but have yet to be demonstrated. In this work, we present a doping-induced topological transition effected by plasmon-phonon hybridization in graphene/α-MoO 3 heterostructures. Scanning near-field optical microscopy was used to image hybrid polaritons in graphene/α-MoO 3 . We demonstrate the topological transition and characterize hybrid modes, which can be tuned from surface waves to bulk waveguide modes, traversing an exceptional point arising from the anisotropic plasmon-phonon coupling. Graphene/α-MoO 3 heterostructures offer the possibility to explore dynamical topological transitions and directional coupling that could inspire new nanophotonic and quantum devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Magnetic transition behavior in epitaxial Fe 47 Rh 47 Pd 6 films

The properties of Fe–Rh–Pd epitaxial thin films grown on MgO(001) were studied as a function of growth temperature. Films grown above 400°C exhibit a first-order antiferromagnetic to ferromagnetic magnetic phase transition with a transition temperature that decreases as the growth temperature is increased. The chemical order parameter computed from the ratio of intensities of the (001) and (002) diffraction peaks is nearly independent of the growth temperature, while the lattice constants change slightly. A comparison of our structural, magnetic, and electrical transport results with first-principle-based calculations as well as literature results indicates that the transition temperature of Fe–Rh-based alloy films depends sensitively on the lattice parameters and is of electronic origin. The transition temperature and its width can be tuned over a wide range by controlling the crystal structure via growth conditions or postdeposition annealing.

36 MATERIALS SCIENCE↗
NASA NTRS1980

Electron impact cross sections for v = 0-1 vibrational excitation in CO at electron energies of 3 to 100 eV

The paper discusses the measurements of normalized, absolute differential cross-sections for electron-impact vibrational transition in CO. Integral and momentum-transfer cross-sections were obtained from these differential results; incident electron energies were in the 3 to 100 eV range, and the scattering angles were 10 to 135 deg. A comparison of these results with measurements made with pure vibrationally elastic cross-sections in N2, and with the data based on a two-potential theory for electron scattering from diatomic molecules showed that the present CO cross-sections are similar to those in N2. This indicates that the long-range effect of the small CO dipole moment is negligible in promoting vibrational excitation; moreover, a significant peak in the integral and momentum-transfer cross-sections is observed at 20 eV. Finally, the low-energy integral cross-sections are compared with a recent set of swarm data for vibrational excitation.

Chutjian, A.↗
NASA NTRS1991

Effect of isotopic substitution on the visible absorption spectrum of ozone

Gas-phase spectra for (O-16)3 and (O-18)3 are examined to consider the electronic states which cause the Chappuis bands. Specifications of the spectrometer and spectra calibrations are given. The results of both a conventional description of the vibrational structure and an examination of the autocorrelation functions are discussed. Transitions to two electronically excited states are the significant features of the isotope shifts. The transitions are characterized by adiabatic energies about 750/cm apart, and the higher energy approaches 16,400/cm. The vibrational structure of the higher state accompanies a relatively simple progression, and the lower state accompanies one isolated band. The autocorrelation analysis shows that for (O-16)3, major recurrences near 31 and 41 fs are found, and longer equivalent times are found for (O-18)3. At longer times, minor recurrences are also found. The results are considered significant for the understanding of the electronic and vibrational structures of the Chappuis bands. Suggestions for future work based on these results are discussed.

Anderson, Stuart M.↗
DOE OSTI2022

Managing photoinduced electron transfer in AgInS2–CdS heterostructures

Ternary semiconductors such as AgInS2, with their interesting photocatalytic properties, can serve as building blocks to design light harvesting assemblies. The intraband transitions created by the metal ions extend the absorption well beyond the bandgap transition. The interfacial electron transfer of AgInS2 with surface bound ethyl viologen under bandgap and sub-bandgap irradiation as probed by steady state photolysis and transient absorption spectroscopy offers new insights into the participation of conduction band and trapped electrons. Capping AgInS2 with CdS shifts emission maximum to the blue and increases the emission yield as the surface defects are remediated. CdS capping also promotes charge separation as evident from the efficiency of electron transfer to ethyl viologen, which increased from 14% to 29%. The transient absorption measurements that elucidate the kinetic aspects of electron transfer processes in AgInS2 and CdS capped AgInS2 are presented. The improved performance of CdS capped AgInS2 offers new opportunities to employ them as photocatalysts.

Kipkorir, Anthony↗
NASA NTRS1979

Two-potential approach for electron-molecular collisions at intermediate and high energies - Application to e-N2 scatterings

A general theoretical approach is proposed for the calculation of elastic, vibrational, and rotational transitions for electron-molecule scattering at intermediate and high-electron-impact energies. In this formulation, contributions to the scattering process come from the incoherent sum of two dominant potentials: a short-range shielded nuclear Coulomb potential from individual atomic centers, and a permanent/induced long-range potential. Application to e-N2 scattering from 50-500 eV incident electron energies has yielded good agreement with absolutely calibrated experiments. Comparisons with other theoretical approaches are made. The physical picture as well as the general features of electron-molecule scattering process are discussed within the framework of the two-potential approach.

Choi, B. H.↗
DOE OSTI2023

Response of the Verwey transition in magnetite to controlled point-like disorder induced by 2.5 MeV electron irradiation

Controlled point-like disorder induced by low temperature 2.5 MeV electron irradiation was used to probe the nature of the Verwey transition in magnetite, Fe 3 O 4 . Two large single crystals, one with optimal transition temperature, T V ≈ 121 K, and another with T V ≈ 109 K, as well as magnetite magnetosome nanocrystals harvested from the lysed cells of the marine magnetotactic vibrio Magnetovibrio blakemorei strain MV-1, T V ≈ 110 K, were examined. Temperature-dependent resistivity is consistent with the semiconductor-to-semiconductor (insulator) sharp, step-like Verwey transition from a state with a small bandgap of around 60 meV to a state with a large bandgap of about 300 meV. The irradiation causes an up-shift of the resistivity curves above the transition without transition smearing or broadening. It also causes an apparent down-shift of the resistivity maximum at high temperatures. In the lower crystal, the electron irradiation drives the transition temperature into a “forbidden” interval of T V , believed to separate the first order from the second order phase transition. Contrary to this belief, the transition itself remains sharp and hysteretic without a significant change in the hysteresis width indicating the strong 1st order character of the Verwey transition for all TV values. The separate 2nd order - looking transition is likely due to sample inhomogeneities. Here we conclude that the sudden change of the bandgap accompanied (or driven) by the monoclinic distortion and the change of magnetic anisotropy is the reason for the Verwey transition in magnetite and the effect of additional disorder is mostly in the smearing of the sharp gap edges near the Fermi level.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electronic origin of half-metal to semiconductor transition and colossal magnetoresistance in spinel HgCr 2 Se 4

Half metals are ferromagnets hosting spin-polarized conducting carriers and are crucial for spintronics applications. The chromium spinel HgCr 2 Se 4 represents a unique type of half-metal, which features a half-metal to semiconductor transition (HMST) and exhibits colossal magnetoresistance (CMR) across the ferromagnetic-paramagnetic (FM-PM) transition. Here, using angle-resolved photoemission spectroscopy, we find that the Fermi surface of n-type HgCr 2 Se 4 (n–HgCr 2 Se 4 ) consists of a single electron pocket which moves above the Fermi level (E F ) upon the FM-PM transition, leading to the HMST. Such a Lifshitz transition manifests a giant band splitting which originates from the exchange interaction unveiled with a specific chemical nonstoichiometry. The exchange band splitting and the chemical nonstoichiometry are two key ingredients to the HMST and CMR, consistent with our ab initio calculation. Our findings provide spectroscopic evidence of the electronic origin of the anomalous properties of HgCr 2 Se 4 , which address the unique phase transition in half-metals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1985

The relation between hard X-ray and transition-region line emission in solar flares

Observational evidence suggests that both the hard X-ray and ultraviolet emission from the impulsive phase of flares result from an electron beam. The results of model calculations that are consistent with this theory are presented. The impulsive phase is envisioned as occurring in many small magnetically confined loops, each of which maintains an electron beam for only a few seconds. This model successfully matches several observed aspects of the impulsive phase. The corona is heated to less than 2 million K, maximum enhanced emission occurs in lines formed near 100,000 K, and there is only slight enhancement between 100,000 and 2 million K. The slope of the observed relationship between hard X-ray and Ov 1371 A emission is also matched, but the relative emission is not. The calculations indicate that UV emission lines formed below a temperature of about 100,000 K will arise predominantly from the chromospheric region heated by the electron beam to transition region temperatures. Emission lines formed at higher temperatures will be produced in the transition region. This should be detectable in density-sensitive line ratios. To account successfully for the impulsive UV emission, the peak temperature in the impulsively heated loops must remain below about 2 million K. Thus the model implies that the impulsive heating takes place in different loops from the hotter gradual phase emission.

Mariska, J. T.↗
DOE OSTI2025

Gate control of electron correlations towards Mott field effect transistors (MottFET)

The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗