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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Dislocation loop formation in model FeCrAl alloys after neutron irradiation below 1 dpa

FeCrAl alloys with varying compositions and microstructures are under consideration for accident-tolerant fuel cladding, but limited details exist on dislocation loop formation and growth for this class of alloys under neutron irradiation. Four model FeCrAl alloys with chromium contents ranging from 10.01 to 17.51 wt % and alunimum contents of 4.78 to 2.93 wt % were neutron irradiated to doses of 0.3–0.8 displacements per atom (dpa) at temperatures of 335–355°C. On-zone STEM imaging revealed a mixed population of black dots and larger dislocation loops with either a/2< 111 > or a< 100 > Burgers vectors. Weak composition dependencies were observed and varied depending on whether the defect size, number density, or ratio of defect types was of interest. Here, the results were found to mirror those of previous studies on FeCrAl and FeCr alloys irradiated under similar conditions, although distinct differences exist.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Influence of welding and neutron irradiation on dislocation loop formation and α' precipitation in a FeCrAl alloy

An advanced accident-tolerant FeCrAl alloy, C35 M (Fe–13Cr–10Al–1Mo, at %), and its laser-fusion weldments were studied after neutron irradiation up to 1.8 dpa at 357 °C to evaluate the radiation damage and α'-precipitation kinetics. Results show that the densities of α' in the fusion zone (FZ) and the heat-affected zone (HAZ) were only a third of that in the base material, i.e., 2.3 × 10 24 m -3 . Here, density of dislocation loops in the FZ and HAZ were less than half of that in base material. The size of α' precipitates and the dislocation loops were found to be smaller in base material, compared to FZ and HAZ. The variances in microstructural response within the different regions were attributed to initial as-welded states of each region, indicating the impact of the pre-irradiation condition on radiation response in FeCrAl alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2013

TEM study of {beta} Prime precipitate interaction mechanisms with dislocations and {beta} Prime interfaces with the aluminium matrix in Al-Mg-Si alloys

The interaction mechanisms between dislocations and semi-coherent, needle-shaped {beta} Prime precipitates in Al-Mg-Si alloys have been studied by High Resolution Transmission Electron Microscopy (HRTEM). Dislocation loops appearing as broad contrast rings around the precipitate cross-sections were identified in the Al matrix. A size dependency of the interaction mechanism was observed; the precipitates were sheared when the longest dimension of their cross-section was shorter than approximately 15 nm, and looped otherwise. A more narrow ring located between the Al matrix and bulk {beta} Prime indicates the presence of a transition interface layer. Together with the bulk {beta} Prime structure, this was further investigated by High Angle Annular Dark Field Scanning TEM (HAADF-STEM). In the bulk {beta} Prime a higher intensity could be correlated with a third of the Si-columns, as predicted from the published structure. The transition layer incorporates Si columns in the same arrangement as in bulk {beta} Prime , although it is structurally distinct from it. The Z-contrast information and arrangement of these Si-columns demonstrate that they are an extension of the Si-network known to structurally connect all the precipitate phases in the Al-Mg-Si(-Cu) system. The width of the interface layer was estimated to about 1 nm. - Highlights: Black-Right-Pointing-Pointer {beta} Prime is found to be looped at sizes larger than 15 nm (cross section diameter). Black-Right-Pointing-Pointer {beta} Prime is found to be sheared at sizes smaller than 15 nm (cross section diameter). Black-Right-Pointing-Pointer The recently determined crystal structure of {beta} Prime is confirmed by HAADF-STEM. Black-Right-Pointing-Pointer Between {beta} Prime and the Al-matrix a transition layer of about 1 nm is existent. Black-Right-Pointing-Pointer The {beta} Prime /matrix layer is structurally distinct from bulk {beta} Prime and the aluminium matrix.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High-resolution electron microscopy observation and dislocation reaction mechanism of fivefold twinning in a Cu-rich precipitate in a cold rolled ferritic steel containing copper

Ferritic steels containing copper have been studied as model systems for clusters/precipitate formation in reactor pressure vessel steels. The samples were aged at 400 °C for 4000 h and subsequently cold rolled to 30% reduction at room temperature. The microstructural characteristics of the samples were analyzed using high-resolution transmission electron microscopy. Direct evidence was found that the fivefold twinning occurs via simultaneous emission of two Shockley partial dislocations from two particular α-Fe/Cu interfaces, and then the pileup tips of the twofold twin. - Highlights: • Fivefold twin is observed in a Cu-rich precipitate in cold rolled ferritic steels. • A dislocation reaction mechanism for the fivefold twin formation is proposed. • Two particular mismatching α-Fe/Cu-rich precipitate interfaces play a critical role.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Dislocation density of pure copper processed by accumulative roll bonding and equal-channel angular pressing

The dislocation density of pure copper fabricated by two severe plastic deformation (SPD) processes, i.e., accumulative roll bonding and equal-channel angular pressing, was evaluated using scanning transmission electron microscopy/transmission electron microscopy observations. The dislocation density drastically increased from ~ 10{sup 13} m{sup −} {sup 2} to about 5 × 10{sup 14} m{sup −} {sup 2}, and then saturated, for both SPD processes.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Scattering of phonons by edge dislocation and thermal conductivity of nanocrystalline silicon

For this work, the temperature dependent thermal conductivity of nanocrystalline silicon with the grain size of 500 nm, 144 nm, and 76 nm, was calculated based on the intrinsic phonon properties using a first-principles-based method and recent analytical theory of phonon-dislocation scattering. The results demonstrate, in the nanocrystalline silicon, that the low temperature (T) limit of thermal conductivity is directly proportional to T 2 instead of the conventional Casimir limit of T 3 . Calculated frequency-dependent scattering rates also indicate regimes of dominant scattering mechanisms: frequency-independent boundary scattering dominates in the very low phonon frequency regime of less than 0.6 THz; frequency-dependent boundary scattering dominates in the intermediate phonon frequency regime between 0.6 and 6 THz; and Umklapp scattering dominates in the high phonon frequency regime beyond 6 THz. The thermal conductivity is linear proportional to nanograin size in the region of d < 100nm and it shows independence at d > 1μm. This work proves the importance of dislocation-phonon scattering to thermal conductivity when the size of nanograins is small or at low temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Solute effects on interfacial dislocation emission in nanomaterials: Nucleation site competition and neutralization

Solutes added to stabilize nano-crystalline metals against grain growth, may segregate to grain boundaries and triple junctions where they can affect the process of the dislocation emission. Here, we demonstrate that this effect can be very complex due to different rates of segregation at different interfaces. Moreover, at large concentrations, when the solutes form clusters, the interfaces between these clusters and the matrix can introduce new dislocation emission sources, which can be activated under lower applied stress. Thus, the strength maximum can occur at a certain solute concentration: adding solutes beyond this optimal concentration can reduce the strength of the material.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Uneven Strain Distribution Induces Consecutive Dislocation Slipping, Plane Gliding, and Subsequent Detwinning of Penta-Twinned Nanoparticles

Twin structures possess distinct physical and chemical properties by virtue of their specific twin configuration. However, twinning and detwinning processes are not fully understood on the atomic scale. Integrating in situ high resolution transmission electron microscopy and molecular dynamic simulations, here, we find tensile strain in the asymmetrical 5-fold twins of Au nanoparticles leads to twin boundary migration through dislocation sliding (slipping of an atomic layer) along twin boundaries and dislocation reactions at the 5-fold axis under an electron beam. Migration of one or two layers of twin planes is governed by energy barriers, but overall, the total energy, including surface, lattice strain, and twin boundary energy, is relaxed after consecutive twin boundary migration, leading to a detwinning process. In addition, surface rearrangement of 5-fold twinned nanoparticles can aid in the detwinning process.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Screw-Dislocation-Driven Growth of 2D Perovskite Spiral Microplates

Two-dimensional (2D) organic–inorganic halide perovskites are solution-processable semiconductors that are promising for optoelectronic applications. Understanding crystallization mechanisms to achieve control over nanostructures is important for optimizing desired properties. Here we introduce a versatile strategy to synthesize spiral microplates of diverse 2D perovskites at the air–water interface through screw-dislocation-driven growth. Spirals of 11 2D perovskite compositions (LA) 2 (A) n−1 Pb n X 3n+1 with different spacer (LA) cations, A-cations, halide (X) anions, and n-number can be grown. They typically consist of single- or few-layer perovskite step heights but exhibit stacking complexity when multiple dislocations interact. The spiral microplates exhibit the characteristic optical properties (photoluminescence and second-harmonic generation) of the underlying 2D perovskites. Fluorescence-detected circular dichroism imaging shows that the chirality of the spiral center does not translate to the observed chiroptical properties of the microplate, consistent with the length scale of the chiral distortion. Furthermore, this solution growth of perovskite spirals diversifies the perovskite microstructures for optoelectronics and other applications.

2D halide perovskites↗
DOE OSTI2012

The origin of 0.78 eV line of the dislocation related luminescence in silicon

In this paper, the 0.78 eV line of the dislocation related luminescence in the electron-irradiated silicon has been investigated. It is found that the 0.78 eV line only exists in float zone silicon samples, and its intensity could be largely enhanced by high temperature and long time annealing while no 0.78 eV line was found in Czochralski silicon. The activation energy of 0.78 eV line in floating-zone silicon is {approx}13 meV, indicating a different nature from that of D1/D2 lines which can be ascribed to specific reconstructed dislocations which could be easily affected by point defects and temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Three-dimensional imaging of dislocations by X-ray diffraction laminography

Synchrotron radiation laminography with X-ray diffraction contrast enables three-dimensional imaging of dislocations in monocrystalline wafers. We outline the principle of the technique, the required experimental conditions, and the reconstruction procedure. The feasibility and the potential of the method are demonstrated by three-dimensional imaging of dislocation loops in an indent-damaged and annealed silicon wafer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Enhancement of room temperature dislocation-related photoluminescence of electron irradiated silicon

In this paper, we have investigated the room temperature dislocation-related photoluminescence of electron irradiated silicon. It is found that high temperature annealing can enhance the D1 line emission measured at room temperature. The abnormal peak shift of D1 line on the dependence of temperatures reveals the reconstruction of D1 luminescence center. It is suggested that the high temperature annealing could cause the transformation of the dislocation-point defect structure, so that the D1 luminescence is enhanced and stabilized.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction

Fast-scanning X-ray nanodiffraction microscopy is used to directly visualize the misfit dislocation network in a SiGe film deposited on a pit-patterned Si substrate at the beginning of plastic relaxation. X-ray real-space diffracted intensity maps are compared to topographic atomic force microscopy images, in which crosshatch lines can be seen. The change in intensity distribution as a function of the incidence angle shows localized variations in strain within the SiGe film. These variations, which reflect the order imposed by the substrate pattern, are attributed to the presence of both bunches of misfit dislocations and defect-free regions.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Transient luminescence induced by electrical refilling of charge carrier traps of dislocation network at hydrophilically bonded Si wafers interface

Dislocation network (DN) at hydrophilically bonded Si wafers interface is placed in space charge region (SCR) of a Schottky diode at a depth of about 150 nm from Schottky electrode for simultaneous investigation of its electrical and luminescent properties. Our recently proposed pulsed traps refilling enhanced luminescence (Pulsed-TREL) technique based on the effect of transient luminescence induced by refilling of charge carrier traps with electrical pulses is further developed and used as a tool to establish DN energy levels responsible for D1 band of dislocation-related luminescence in Si (DRL). In present work we do theoretical analysis and simulation of traps refilling kinetics dependence on refilling pulse magnitude (Vp) in two levels model: shallow and deep. The influence of initial charge state of deep level on shallow level occupation-Vp dependence is discussed. Characteristic features predicted by simulations are used for Pulsed-TREL experimental results interpretation. We conclude that only shallow (∼0.1 eV from conduction and valence band) energetic levels in the band gap participate in D1 DRL.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The core structure of dislocations and their relationship to the material γ-surface

Using a density functional theory-phase field dislocation dynamics model, we reveal a strong inverse relationship between the dislocation equilibrium core width and the normalized intrinsic stacking fault energy for nine face centered cubic (fcc) metals, in quantitative agreement with experiments but not with conventional continuum models. In addition, we show that due to an anomalous feature in its γ-surface, platinum has a fundamentally different core structure and a much wider equilibrium core width than expected. Based on ab initio electronic structure calculations, we attribute this anomaly to distinct differences in the directionality of charge transfer in platinum.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

On the scaling behavior of hardness with ligament diameter of nanoporous-Au: Constrained motion of dislocations along the ligaments

The scaling behavior of hardness with ligament diameter and vacancy defect concentration in nanoporous Au (np-Au) has been investigated using a combination of Vickers Hardness, Scanning electron microscopy, and positron lifetime measurements. It is shown that for np-Au, the hardness scales with the ligament diameter with an exponent of −0.3, that is, at variance with the conventional Hall-Petch exponent of −0.5 for bulk systems, as seen in the controlled experiments on cold worked Au with varying grain size. The hardness of np-Au correlates with the vacancy concentration C{sub V} within the ligaments, as estimated from positron lifetime experiments, and scales as C{sub V}{sup 1/2}, pointing to the interaction of dislocations with vacancies. The distinctive Hall-Petch exponent of −0.3 seen for np-Au, with ligament diameters in the range of 5–150 nm, is rationalized by invoking the constrained motion of dislocations along the ligaments.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Structure and electronic properties of mixed (a + c) dislocation cores in GaN

Classical atomistic models and atomic-resolution scanning transmission electron microscopy studies of GaN films reveal that mixed (a + c)-type dislocations have multiple different core structures, including a dissociated structure consisting of a planar fault on one of the (12{sup ¯}10) planes terminated by two different partial dislocations. Density functional theory calculations show that all cores introduce localized states into the band gap, which affects device performance.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Comparative study on hydrostatic strain, stress and dislocation density of Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure before and after a-Si{sub 3}N{sub 4} passivation

The hydrostatic strain, stress and dislocation densities were comparatively analyzed before and after passivation of amorphous silicon nitride (a-Si{sub 3}N{sub 4}) layer on Al{sub 0.3}Ga{sub 0.7}N/GaN heterostructure by nondestructive high resolution x-ray diffraction (HRXRD) technique. The crystalline quality, in-plane and out-of plane strain were evaluated from triple-axis (TA) (ω-2θ) diffraction profile across the (002) reflection plane and double-axis (DA) (ω-2θ) glancing incidence (GI) diffraction profile across (105) reflection plane. The hydrostatic strain and stress of Al{sub 0.3}Ga{sub 0.7}N barrier layer were increased significantly after passivation and both are tensile in nature. The dislocation density of GaN was also analyzed and no significant change was observed after passivation of the heterostructure. The crystalline quality was not degraded after passivation on the heterostructure confirmed by the full-width-half-maximum (FWHM) analysis.

36 MATERIALS SCIENCE↗