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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Optical design and synthetic analysis of the electron cyclotron emission imaging diagnostic of HL-2M tokamak

The electron cyclotron emission imaging (ECEI) diagnostic is a powerful tool to study the MHD and turbulent transport in magnetically confined fusion plasmas. In this work, the optical system including the local oscillator (LO) coupling and radio frequency (RF) receiving optics, has been designed and analyzed for the HL-2M ECEI diagnostic. The LO optics can illuminate the antenna array and drive the mixer diode to work efficiently, with more than 36% of the beam intensity for the channels which probe the plasma edge relative to those of channels which probe the plasma core. The RF optics aims at guiding the plasma emission signal to the antenna array. To meet different physical requirements, three types of field of view have been achieved for the plasma imaging, with zoom factors of around 1, 1.5 and 2, respectively. The focal surfaces are almost flat, with a maximum off-mapping (defined as the radial distance between the beam waists of the lower-/uppermost antennas and electron cyclotron emission layer) less than 2.5 cm, which can match the electron cyclotron emission layer quite well and suppress the image distortion in the plasma edge region. Furthermore, the impact of possible vibrations and installation error on the focal plane has been evaluated. In addition, the predefined MHD and turbulence perturbations are well reproduced by combining the optical simulation results and synthetic ECEI modeling, which further verifies the good performance of the RF optics.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Feasibility of critical infrastructure protection using network functions for programmable and decoupled ICS policy enforcement over WAN

Industrial control systems (ICS) represent a major component of our critical infrastructure. With the increasing need for more control and monitoring of such systems, ICS have seen an increase in connectivity to wide area networks (WAN) exposing aging equipment to rapidly evolving cybersecurity threats. Furthermore, the ICS data requires a reliability measure from the networks for critical functions for infrastructure monitoring and control. Especially when remote plant sites are involved such as pipelines, energy distribution networks, and transportation, WAN transport impairments most often provide a best effort delivery with no strict reliability guarantees. Network functions can provide a vendor agnostic, programmable critical infrastructure protection with a single maintenance, policy determination, and reliability assurance surface. A network function (NF) can be utilized for policy enforcement over the communication between remote entities and the main control office. This paper presents the research on transparent integration with existing ICS without disrupting communications, resulting in minimal downtime while decoupling the fast paced evolution of defensive security measures from the upgrade cycle of expensive long term hardware. We report our measurements on the resource requirements and overhead in the network for successful NF insertion under a wide variety of network impairments (network packet delay, reordering, and loss). Our paired NF implementation provides a policy enforcement platform extensible to cover myriad cybersecurity-related communication goals, including packet signing for verification, encryption for data privacy, packet filtering and data diode operation (i.e. protecting against eavesdropping, packet injection, and denial-of-service). Furthermore, bundling communication specifications into packet flows allows for tunability in applying policies as coarse- or fine-grained as the needs of the operator. We report on network function resource requirements in the form of required queue depth and network utilization overhead to inform the decision making against hardware cost constraints.

42 ENGINEERING↗
DOE OSTI2020

Application of emerging monitoring techniques at the Illinois Basin – Decatur Project

The Illinois Basin – Decatur Project is a large-scale carbon capture and storage demonstration project located in Decatur, Illinois, USA. In this project, one million metric tons of carbon dioxide (CO 2 ) was captured from an ethanol production facility and successfully injected into a deep saline reservoir over a period of three years. The scale of this project presented an opportunity to explore emerging technologies for effective long-term monitoring of the carbon capture and storage site. This research documents the application of three emerging monitoring techniques: (1) a prototype “open-path” sensor, a method of continuously monitoring atmospheric CO 2 by applying tunable diode laser absorption spectroscopy to provide a warning system for personnel safety along pipelines and at wellheads; (2) the Greenhouse Gas Laser Imaging Tomography Experiment (GreenLITE), an automated system for measuring two-dimensional spatial distribution of atmospheric CO 2 concentrations; and (3) periodic aerial imagery, a method of documenting surface-vegetation dynamics to detect vegetative responses to CO 2 leaks. The objective of this work was to assess the advantages and limitations of these monitoring techniques and quantify their reliability over an extended deployment at an active industrial site. These results will aid in determining viability of long-term monitoring on a commercial scale.

42 ENGINEERING↗
DOE OSTI2022

Growth, optical, and luminescence characterization of LiCsMoO{sub 4} crystal.

A crack-free LiCsMoO4 crystal was grown with the conventional Czochralski technique. The optical properties of the crystal show it transparent well in the visible region. The luminescence properties of the crystal were studied from 300 to 14 K under the excitation with a 280 nm light-emitting diode (LED). At room temperature, the luminescence light yield is low; however, it increases significantly at low temperatures. The decay time of the crystal is measured under the excitation of the crystal with the 280 nm LED source. The decay times at all the temperatures are fitted with three exponential functions. The average decay time from 300 to 14 K varies from 6.7 to 8.6 mu s. A thermoluminescence (TL) study of the crystal was carried out from 9 to 300 K. Three TL peaks are found between 165 and 250 K. This study shows that the developed crystal has a potential application in search of neutrinoless double-beta decay of Mo-100 at cryogenic temperatures.

Conventional Czochralski technique↗
DOE OSTI2020

The 1.66 μm spectrum of the ethynyl radical, CCH

Frequency-modulated diode laser transient absorption spectra of the ethynyl radical have been recorded at wavelengths close to 1.66 μm. The observed spectrum includes strong, regular, line patterns. The two main bands observed originate in the ground $\tilde{χ}$ 2 Σ + state and its first excited bending vibrational level of 2 $Π$ symmetry. The upper states, of 2 Σ + symmetry at 6055.6 cm -1 and 2 $Π$ symmetry at 6413.5 cm -1 , respectively, had not previously been observed and the data were analyzed in terms of an effective Hamiltonian representing their rotational and fine structure levels to derive parameters which can be used to calculate rotational levels up to J = 37/2 for the 2 $Π$ level and J = 29/2 for the 2 Σ one. Additionally, a weaker series of lines have been assigned to absorption from the second excited bending, (0 2 0), level of 2 Σ symmetry, to a previously observed state of 2 $Π$ symmetry near 6819 cm -1 . These strong absorption bands at convenient near-IR laser wavelengths will be useful for monitoring CCH radicals in chemical systems.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Reverse-Bias Resilience of Monolithic Perovskite/Silicon Tandem Solar Cells

Metal halide perovskites have rapidly enabled a range of high-performance photovoltaic technologies. However, catastrophic failure under reverse voltage bias poses a roadblock for their commercialization. In this work, we conduct a series of stress tests to compare the reverse-bias stability of perovskite single-junction, silicon single-junction, and monolithic perovskite/silicon tandem solar cells. We demonstrate that the tested perovskite/silicon tandem devices are considerably more resilient against reverse bias compared with perovskite single-junction devices. The origin of such improved stability stems from the low reverse-bias diode current of the silicon subcell. This translates to dropping most of the voltage over the silicon subcell, where such a favorable voltage distribution protects the perovskite subcell from reverse-bias-induced degradation. These results highlight that, compared with other perovskite technologies, monolithic perovskite/silicon tandems are at a higher technology readiness level in terms of tackling the reverse bias and partial shading challenges, which is a considerable advantage toward commercialization.

halide perovskite↗
DOE OSTI2023

K-shell radiation and bright spot characteristics of high-energy-density Fe-Cr-Ni plasmas influenced by X-pinch load geometry

K-shell radiation is diagnostically advantageous for the study of high-energy-density plasmas. Here, the current work investigates the influence of load geometry on K-shell x-rays in Z-pinch plasmas produced on the 1-MA Zebra generator. Stainless steel (Fe: 69%, Cr: 20%, Ni: 9%) X-pinch wire loads are fielded with an interwire angle of 31° (small-angle) or 62.5° (large-angle), respectively and studied using various x-ray diode, imaging, and spectroscopic diagnostics. The large-angle geometry produced large, individual x-ray-emitting bright spots (> 3 keV) at the wire cross-point averaging areas ≥ 1 mm 2 , with noteworthy soft x-ray (> 0.75 keV) bursts and radiation yields ≤ 14.6 kJ. The small-angle geometry produced multiple x-ray-emitting bright spots extending the pinch axis with smaller average sizes (≤ 0.5 mm 2 ), consistent with stronger current, increased radiation yield (≥ 15.5 kJ), and notable hard x-ray (> 9 keV) bursts, which peak with largest cumulative bright spot size. Spectroscopic analysis is performed with non-LTE collisional-radiative modeling, indicating a cold, nonthermal plasma region radiating from neutral to Ne-like ions, a hot, thermal region radiating from Fe and Cr He- and Li-like ions, and an intermediate region radiating Kα satellites from Li-like to O-like ions. Modeling of the nonthermal and satellite features imply a fractional hot electron abundance ~0.1% and ~0.5% for large- and small-angle geometries, respectively. Relative intensity analysis is performed on Heα and Kα lines, revealing intensity ratios that deviate from the original wire composition. Optical depth estimates allude to optically thick, thermal K-shell plasmas with densities consistent with non-LTE modeling.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Semiconductor-compatible topological digital alloys

Recently, GeSn alloys have attracted much interest for direct-gap infrared photonics and as potential topological materials which are compatible with the semiconductor industry. However, for photonics, the high-Sn content required leads to low detectivity, associated with poor material quality, and the (>35 %) Sn required for topological properties have been out of reach experimentally. Here, we demonstrate that by patterning the Sn distribution within Ge, the electronic properties have a far greater tunability than is possible with the random alloy. For the GeSn δ-digital alloy (DA) formed by confining Sn atoms in atomic layer(s) along the [111] direction of Ge, we show that ∼ 10 % Sn can lead to a triple-point semimetal. These findings are understood in terms of Sn ordering causing spatial separation of Sn and Ge band edges, leading to band inversion. This mechanism can also lead to a weak topological insulator, Weyl semimetal, and enables tunable direct bandgaps down to 2 meV, covering the entire infrared range. This DA induced topological properties are also identified in compound semiconductors, such as InAs 1-x Sb x , showing the general applicability of the DA design for realizing topological properties on conventional semiconductor platforms. Furthermore, our findings not only point to a new class of currently unexplored topological systems accessible by epitaxy, but also establish the promise of low-Sn GeSn DAs for application as infrared laser diodes and photodetectors in Si photonic integrated circuits and infrared image sensors.

3D topological semimetal↗
DOE OSTI2021

Enabling AC electroluminescence in quasi-2D perovskites by uniformly arranging different-n-value nanoplates to allow bidirectional charge transport

Perovskite light-emitting diodes (LEDs) are normally operated under forward direct current (DC) to realize electron/hole injection at cathode/anode surfaces. In this work, we demonstrate an alternating current (AC) driven LED enabled by bi-directionally allowed charge transport in quasi-2D perovskite (PEA 2 MA n-1 PbnI 3n+1 ) film. Essentially, the bi-directional charge transport is realized by uniformly arranging different-n-value 2D nanoplates together with symmetrically designed anode/cathode interfaces, which can allow injected electrons and holes to form light-emitting states under both forward and reverse biases, leading to an AC electroluminescence (EL) with the device architecture of ITO/PEI/PEDOT:PSS/PEA 2 MA n-1 PbnI 3n+1 /P3HT/PEI/Ag. The high AC EL performance was achieved with the radiance = 24 W Sr -1 m -2 and 18.3 W Sr -1 m -2 and EQE = 12.5% and 3.7% under forward and reverse biases. Furthermore, the device-operational stability was largely improved with the half-intensity time of T 50 = 11.0 h under AC bias (+2 V/-2 V, 50 Hz) as compared to T 50 = 3.9 h under forward bias (+2 V/0 V, 50 Hz).

36 MATERIALS SCIENCE↗
DOE OSTI2020

Study of CMOS strip sensor for future silicon tracker

Monolithic silicon sensors developed with High-Voltage CMOS (HV-CMOS) processes have become highly attractive for charged particle tracking. Compared with the standard CMOS sensors, HV-CMOS sensors can provide larger and deeper depletion regions that lead to larger signals and faster charge collection. They can provide high position resolution, low material budget, high radiation hardness and low cost that are desirable for high performance tracking in harsh collision environment. Various studies have been conducted to explore the technology feasibility for the large-area tracking systems at future collider experiments. CHESS (CMOS HV/HR Evaluation for Strip Sensor) sensor series have been developed as an alternative solution to the conventional silicon micro-strip detectors for the ATLAS inner tracker upgrade. The first prototype (named CHESS1) was to evaluate the diode geometry and the in-pixel analog electronics. Obtained test results were used to optimize the second prototype (named CHESS2). CHESS2 was implemented with a full digital readout architecture and realized as a full reticle sized monolithic sensor. Here, the basic characteristics of the CHESS2 prototype sensors and their performance in response to different input signals are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device parameters such as Schottky barrier height and ideality factor were determined; however, many of the devices exhibited nonideal behavior and inferior performance characterized by ideality factors significantly greater than one, disproportionate low voltage leakage current and low barrier heights. Forward current–voltage (FIV) characteristics were fitted to an inhomogeneous barrier height theory to explain the abnormal behavior exhibited by the printed devices. Here, transmission electron microscopy (TEM) of the device cross-sections was performed to investigate the printed metal and semiconductor epitaxial layer interface, which revealed the imperfections in the metal–semiconductor contact. Despite these irregularities, alpha radiation detection capability of these devices was still achieved with an energy resolution of 1.89% at 5.486 MeV, and the best achievable resolution at 0.51% with no energy degradation of 5.486 MeV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data

This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the n+ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the n+ doping profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between 2.5μm for 70–100 pad-pitch geometry and 17μm with 200–500 matrices, a factor of 10 better than what is achievable in binary read-out (bin size/12). Beam test data show a temporal resolution of ~40ps for 200 μm pitch devices, in line with the best performances of LGAD sensors at the same gain.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Advanced silicon tracking detector developments for the future Electron-Ion Collider

The proposed Electron-Ion Collider (EIC) will operate high-luminosity high-energy electron+proton and electron+nucleus collisions at the collision energies from 20 GeV to 141 GeV to solve several fundamental questions in the high energy and nuclear physics fields. Its instantaneous luminosity can reach 10 33-34 cm -2 s -1 and the bunching crossing rate is around 10 ns. The EIC project has received CD1 approval from the US DOE in 2021 and moves toward the machine design and preparation for construction. To realize various particle measurements with high precision at the future EIC, a low material-budget and high-granularity silicon vertex and tracking detector with fine spatial and momentum resolutions and nearly 4π solid angle coverage is desired. The Monolithic Active Pixel Sensor (MAPS) and AC Coupled Low Gain Avalanche Diode (AC-LGAD) technologies stand out of several advanced technology options for the EIC silicon vertex and tracking detector subsystems. The MAPS technology has advanced features of low material budget, low power consumption, good radiation resistance and fine spatial resolution. The AC-LGAD technology can achieve fast timing resolution. Latest studies and progress of the EIC silicon vertex and tracking detector conceptual design, performance validations in simulation and ongoing MAPS and AC-LGAD R&D will be shown. Furthermore, schedule and plan of the EIC project detector development will be discussed as well.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Calibration of a compact ASIC-based data acquisition system for neutron/$γ$ discrimination and spectroscopy with organic scintillators

Segmented neutron detectors that use silicon photomultipliers (SiPMs) are receiving significant attention in nuclear security applications. Some of these detectors employ hundreds of channels and would therefore benefit from the use of high-channel-density and low-cost-per-channel data acquisition (DAQ) systems. Candidate DAQ systems that meet these requirements exist, but few perform full waveform digitization, which permits neutron and gamma-ray interaction discrimination via pulse shape. In this work, we study the performance of the TOFPET2 (PETsys Electronics), an ASIC-based DAQ designed for positron emission tomography, which has been adapted to provide sensitivity to pulse shape by the use of variable-period charge integration. We use a light-emitting diode to calibrate a combination of an ON Semiconductor (SensL) 60035-64P J-Series SiPM and TOPFET2 DAQ and evaluate the linearity of their response and dynamic range. Here, the calibration curve was obtained by comparing the DAQ response to that measured with a photodiode interfaced with a traditional waveform digitizer. This calibration process was used for rudimentary spectroscopy of various neutron and sources.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Evaluation of the absolute single-photon detection efficiency of HRPPD

Pixelated High Rate Picosecond Photon Detectors (HRPPDs) by Incom Inc. are promising photosensors for use in Ring Imaging CHerenkov (RICH) detectors, where a high gain, sub-mm position resolution and sub-100ps timing resolution are required in a single photon mode. Quantum Efficiency (QE) has been measured for the first batch of EIC HRPPDs both by Incom and EIC research groups at Jefferson Lab and Brookhaven Lab, with peak values at ∼365 nm typically exceeding 30%. Furthermore, in this study, we present a first direct measurement of Photon Detection Efficiency being equal to (17.1 ± 0.1 [stat] ± 0.3 [sys])% at 398.6 nm, for a pixel near the center of HRPPD, in a photoelectron pulse counting mode using a picosecond diode laser. HRPPD QE at the same spot and at the same wavelength was evaluated to be (24.4 ± 0.1 [stat] ± 0.3 [sys])%, leading to a Collection Efficiency estimate of (70.3 ± 1.6)%, which is consistent with the expectations.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2026

Light monitoring system for the lead tungstate calorimeter in Hall D at Jefferson Lab

A new electromagnetic calorimeter composed of 1596 lead tungstate (PbWO 4 ) scintillating crystals has been constructed for the GlueX detector in Hall D at Jefferson Lab. The calorimeter is equipped with a light monitoring system that uses light-emitting diodes. The light monitoring system was fabricated, installed, and integrated into the GlueX trigger system. It was successfully operated during detector commissioning and data collection, providing monitoring of the detector response and verification of the calibration with a precision better than 1%. In conclusion, the paper describes the design, installation, and performance of the light monitoring system.

Lead tungstate calorimeter↗
DOE OSTI2025

Charge collection efficiency of diamond and silicon sensors irradiated with alpha particles

To evaluate the viability of using semiconductors as sensor materials in a detector for the Associated Particle Imaging technique, the radiation hardness of silicon and diamond diodes to alpha particles has been assessed. Here, the detector lifetimes for both silicon and diamond sensors were measured under the prolonged exposure to alpha particles emitted by an 241 Am source. The silicon detector was exposed to alpha radiation for approximately two months, reaching an accumulated fluence of ~ 1.5 x 10 12 α cm –2 . Additionally, by using a high purity single-crystal diamond with coplanar electrodes operating with full charge collection, the diamond detector response was measured over approximately ten months reaching an accumulated fluence of over 6 x 10 12 α cm –2 cm.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

New red phosphor ceramic K 2 SiF 6 :Mn 4+

We report a new transparent ceramic phosphor for use in LED lighting has been fabricated. The previously reported and optimized narrow-emitting red phosphor, K 2 SiF 6 :Mn 4+ (KSF), has been consolidated into a transparent ceramic phosphor for the first time, accomplished via hot-pressing the feedstock phosphor powder in a die under vacuum. KSF ceramics were fabricated with varying doping concentrations of Mn 4+ and their properties studied. The absorption and emission spectra of the ceramics were identical to the feedstock phosphor powders and are ideal for LED lighting with strong absorption at 450 nm and narrow emission around 630 nm. The absorbance of the ceramics was directly proportional to the doping concentration. The ceramics were excited at various blue light fluxes and their emission intensities measured to study the effect of Mn 4+ concentration on intensity-driven “droop” in the emission output. The ceramics with a lower Mn 4+ doping were more efficient under higher light fluxes due to a decrease in Auger upconversion losses. KSF ceramics can allow a much longer path length of the diode light through the phosphor, as compared to phosphor-in-silicone, enabling the use of low optical absorption and the associated reduced activator concentration. The ceramics are measured to have a thermal conductivity of ~1.0 W/m-K, higher than that of phosphor-in-silicone or phosphor-in-glass. Several of these properties make KSF ceramics potentially desirable for use in white light LEDs. Greater thermal conductivity helps with heat dissipation, the lower surface area of the ceramic compared to the powder minimizes the environmental vulnerability of KSF, and the ability to lower the Mn 4+ concentration reduces Auger recombination losses and mitigates the temperature rise, particularly at higher light flux.

36 MATERIALS SCIENCE↗