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At least 703 records · Page 39

Solar silicon via the Dow Corning process

Technical feasibility for high volume production of solar cell-grade silicon is investigated. The process consists of producing silicon from pure raw materials via the carbothermic reduction of quartz. This silicon was then purified to solar grade by impurity segregation during Czochralski crystal growth. Commercially available raw materials were used to produce 100 kg quantities of silicon during 60 hour periods in a direct arc reactor. This silicon produced single crystalline ingot, during a second Czochralski pull, that was fabricated into solar cells having efficiencies ranging from 8.2 percent to greater than 14 percent. An energy analysis of the entire process indicated a 5 month payback time.

Hunt, L. P.↗

Solid-State High-Temperature Power Cells

All-solid-state electrochemical power cells have been fabricated and tested in a continuing effort to develop batteries for instruments for use in environments as hot as 500 C. Batteries of this type are needed for exploration of Venus, and could be used on Earth for such applications as measuring physical and chemical conditions in geothermal and oil wells, processing furnaces, and combustion engines. In the state-of-the-art predecessors of the present solid-state power cells, fully packaged molten eutectic salts are used as electrolytes. The molten-salt-based cells can be susceptible to significant amounts of self-discharge and corrosion when used for extended times at elevated temperatures. In contrast, all-solid-state cells such as the present ones are expected to be capable of operating for many days at temperatures up to 500 C, without significant self-discharge. The solid-state cell described here includes a cathode made of FeS2, an electrolyte consisting of a crystalline solid solution of equimolar amounts of Li3PO4 and Li4SiO4, and an anode made of an alloy of Li and Si (see figure). The starting material for making the solid electrolyte is a stoichiometric mixture of Li3PO4, SiO2, and Li3CO2. This mixture is ball-milled, then calcined for two hours at a temperature of 1,100 C, then placed in a die atop the cathode material. Next, the layers in the die are squeezed together at a pressure between 60 and 120 MPa for one hour at a temperature of 600 C to form a unitary structure comprising the solid electrolyte and cathode bonded together. Finally, the lithium-alloy anode is pressure-bonded to the solid electrolyte layer, using an intermediate layer of pure lithium. In one test of a cell of this type, a discharge rate of about 1 mA per gram of cathode material was sustained for 72 hours at a temperature of about 460 C. This is about three times the discharge rate required to support some of the longer duration Venus-exploration mission scenarios.

Whitacre, Jay↗

Status of diffused junction p+n InP solar cells for space applications

Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

Faur, Mircea↗

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Wang, K. L.↗

Evaluation and verification of epitaxial process sequence for silicon solar-cell production

To achieve the program goals, 28 minimodules were fabricated and tested, using 600 cells made from three-inch-diameter wafers processed by the sequence chosen for this purpose. Of these 600 cells, half were made from epitaxially grown layers on potentially low-cost substrates. The other half were made from commercial semiconductor-grade (SG), single-crystal silicon wafers that served as controls. Cell processing was normally performed on mixed lots containing significant numbers of each of these two types of wafers. After evaluation of the performance of all cells, they were separated by types for incorporation into modules that were to be tested for electrical performance and response to environmental stress. A simplified flow chart displaying this scheme, for quantities representing half of the planned total to be processed, is presented.

Redfield, D.↗

Status of AlGaAs/GaAs heteroface solar cell technology

This paper reviews the various GaAs solar cell programs that have been and are now ongoing which are directed at bringing this particular technology to fruition. The discussion emphasizes space application - both concentrator and flat plate. The rationale for pursuing GaAs cell technology is given along with the different cell types (concentrator, flat plate), approaches to fabricate the devices, the hybrid cells under investigation and approaches to reduce cell mass are summarized. The outlook for the use of GaAs cell technology is given within the context for space application.

Rahilly, W. P.↗

Regenerative Performance of the NASA Symmetrical Solid Oxide Fuel Cell Design

The NASA Glenn Research Center is developing both a novel cell design (BSC) and a novel ceramic fabrication technique to produce fuel cells predicted to exceed a specific power density of 1.0 kW/kg. The NASA Glenn cell design has taken a completely different approach among planar designs by removing the metal interconnect and returning to the use of a thin, doped LaCrO3 interconnect. The cell is structurally symmetrical. Both electrodes support the thin electrolyte and contain micro-channels for gas flow-- a geometry referred to as a bi-electrode supported cell or BSC. The cell characteristics have been demonstrated under both SOFC and SOE conditions. Electrolysis tests verify that this cell design operates at very high electrochemical voltage efficiencies (EVE) and high H2O conversion percentages, even at the low flow rates predicted for closed loop systems encountered in unmanned aerial vehicle (UAV) applications. For UAVs the volume, weight and the efficiency are critical as they determine the size of the water tank, the solar panel size, and other system requirements. For UAVs, regenerative solid oxide fuel cell stacks (RSOFC) use solar panels during daylight to generate power for electrolysis and then operate in fuel cell mode during the night to power the UAV and electronics. Recent studies, performed by NASA for a more electric commercial aircraft, evaluated SOFCs for auxiliary power units (APUs). System studies were also conducted for regenerative RSOFC systems. One common requirement for aerospace SOFCs and RSOFCs, determined independently in each application study, was the need for high specific power density and volume density, on the order of 1.0 kW/kg and greater than 1.0 kW/L. Until recently the best reported performance for SOFCs was 0.2 kW/kg or less for stacks. NASA Glenn is working to prototype the light weight, low volume BSC design for such high specific power aerospace applications.

Cable, Thomas L.↗

Solar Cells for Lunar Application

In this work a preliminary study of the vacuum evaporation of silicon extracted from the lunar regolith has been undertaken. An electron gun vacuum evaporation system has been adapted for this purpose. Following the calibration of the system using ultra high purity silicon deposited on Al coated glass substrates, thin films of lunar Si were evaporated on a variety of crystalline substrates as well as on glass and lightweight 1 mil (25 microns) Al foil. Extremely smooth and featureless films with essentially semiconducting properties were obtained. Optical absorption analysis sets the bandgap (about 1.1 eV) and the refractive index (n=3.5) of the deposited thin films close to that of crystalline silicon. Secondary ion mass spectroscopy and energy dispersive spectroscopy analysis indicated that these films are essentially comparable to high purity silicon and that the evaporation process resulted in a substantial reduction of impurity levels. All layers exhibited a p-type conductivity suggesting the presence of a p-type dopant in the fabricated layers. While the purity of the 'lunar waste material' is below that of the 'microelectronic-grade silicon', the vacuum evaporated material properties seems to be adequate for the fabrication of average performance Si-based devices such as thin film solar cells. Taking into account solar cell thickness requirements (greater than 10 microns) and the small quantities of lunar material available for this study, solar cell fabrication was not possible. However, the high quality of the optical and electronic properties of evaporated thin films was found to be similar to those obtained using ultra-high purity silicon suggest that thin film solar cell production on the lunar surface with in situ resource utilization may be a viable approach for electric power generation on the moon.

Freundlich, Alex↗

The progress of large area GaInP2/GaAs/Ge triple junction cell development at Spectrolab

In this paper we report the successful fabrication of large area, monolithic triple junction, n on p, GaInP2/GaAs/Ge cells. The highest open circuit voltage and cell efficiency (cell area: 4.078 sq cm) were measured at 2.573 V and 23.3%, respectively, under 1 sun, AMO illumination. To our knowledge, this is the highest single crystal, monolithic, two terminal triple junction cell efficiency demonstrated. In addition, excellent uniformity across a 3 inch diameter Ge substrates has also been achieved. An average cell efficiency of 22.8% across the 3 inch diameter wafer has been measured. We have also successfully fabricated welded cell-interconnect-cover (CIC) assemblies using these triple junction devices. The highest CIC efficiency was 23.2% (bare cell efficiency was 23.3%). The average efficiency for 25 CICs was 21.8%, which is very comparable to the 22.0% average bare cell efficiency before they were fabricated into the CICs. Finally, we have measured temperature coefficient and 1 MeV electron irradiation data. These will be presented in the paper.

Chiang, P. K.↗

Understanding What Limits the Voltage of Polycrystalline CdSeTe Solar Cells

The origin of voltage deficits in polycrystalline cadmium selenide telluride (CdSeTe) solar cells is unclear. Here, we present a comprehensive voltage loss analysis performed on state-of-the-art CdSeTe devices - fabricated at Colorado State University and First Solar - using photoluminescence techniques, including external radiative efficiency (ERE) measurements. More specifically, we report the thermodynamic voltage limit Voc,ideal, internal voltage iVoc and external voltage Voc of partially and fully finished cells fabricated with different dopant species, dopant concentrations and back contacts. Arsenic-doped aluminium-oxide-passivated cells made at Colorado State University present remarkably high ERE (>1%) - translating into iVoc above 970 mV - but suffer from poor back-contact selectivity. On the other hand, arsenic-doped devices from First Solar present almost perfect carrier selectivity (Voc=iVoc), leading to Voc above 840 mV, and are limited by recombination in various parts of the device. Thus, development of contact structures that are both passivating and selective in combination with highly luminescent absorbers is key to reducing voltage losses.

CdSeTe devices↗

Issues on the production and electrochemical separation of oxygen from carbon dioxide

There is considerable interest in in-situ propellant manufacturing on the moon and Mars. One of the concepts of oxygen production that is being actively pursued is the processing of atmospheric carbon dioxide on Mars to produce oxygen by means of thermal decomposition and electrochemical separation. The key component of such a production facility is the electrochemical separation cell that filters out the oxygen from the gas mixture of carbon dioxide, carbon monoxide, and oxygen. Efficient design of the separation cell and the selection of electrolyte and electrode materials of superior performance for the cell would translate to significant reduction in the power requirement and the mass of the production facility. The objective is to develop the technology required to produce the cells in-house and test various electrolyte and electrode materials systematically until the optimal combination is found. An effective technique was developed for the fabrication of disk shaped cells. Zirconia and Ceria cells were made in-house. Complete modules of the electrochemical cell and housings were designed, fabricated, and tested.

Kaloupis, P.↗

The effect of process conditions on the performance of epitaxial InP solar cells

Indium phosphide solar cells have a higher resistance to electron irradiation than Si or GaAs cells of comparable junction depth. As a result, there is much interest in the use of this material for space applications. Cells of this material were made in bulk InP by a number of techniques, including ion implantation, direct diffusion in sealed ampoules, and by open tube diffusion. However, it is generally considered that the epitaxial approach will be superior to all of these techniques. The epitaxy of InP is considerably more difficult than that of gallium arsenide, for a number of reasons. Perhaps the most important is the fact that the native oxides of Indium are extremely difficult to remove, as compared to that of Gallium. In addition, thermal treatments for the desorption of these oxides often result in the formation of phosphorus vacancies and free indium on the surface. Thus, inadequate sample preparation before epitaxy, poor reactor cleaning procedures, or poor transition procedures between the growth of successive layers, all give rise to trap phenomena and to high interface recombination velocities. Moreover, the lifetime of the grown material is dominated by the occurrence of native defects, so that it is a strong function of growth parameters. These problems are of special interest to the fabrication of solar cells, where long life-time, combined with the absence of traps, is highly desirable. A study of this problem is described using a non-invasive diagnostic technique which was developed.

Borrego, J. M.↗

Thin foil silicon solar cells with coplanar back contacts

To fabricate 50 microns thick, coplanar back contact (CBC) silicon solar cells, wraparound junction design was selected and proved to be effective. The process sequence used, the cell design, and the cell performance are described. CBC cells with low solar absorptance have shown AMO efficiencies to 13%, high cells up to 14%; further improvements are projected with predictable optimization.

Ho, F.↗

Process Research On Polycrystalline Silicon Material (PROPSM)

Performance limiting mechanisms in polycrystalline silicon are investigated by fabricating a matrix of solar cells of various thicknesses from polycrystalline silicon wafers of several bulk resistivities. The analysis of the results for the entire matrix indicates that bulk recombination is the dominant factor limiting the short circuit current in large grain (greater than 1 to 2 mm diameter) polycrystalline silicon, the same mechanism that limits the short circuit current in single crystal silicon. An experiment to investigate the limiting mechanisms of open circuit voltage and fill factor for large grain polycrystalline silicon is designed. Two process sequences to fabricate small cells are investigated.

Culik, J. S.↗

Innovative, Versatile and Cost-Effective Solid Oxide Fuel Cell Stack Concept

This report summarizes the work performed for the U. S. Department of Energy/National Energy Technology Laboratory (DOE/NETL) under Cooperative Agreement DE-FE0026211 entitled “Innovative, Versatile and Cost-Effective Solid Oxide Fuel Cell Stack Concept”. The overall objective of this project was to develop and evaluate a solid oxide fuel cell (SOFC) stack configuration based on a novel prime-surface interconnect design for a broad range of power generation applications. The prime-surface is a one-piece metallic interconnect that incorporates both fuel and oxidant flow fields with peaks on one side of the interconnect serving as flow channels (valleys) on the other side. (One example is the egg-carton shaped interconnect design.) This stack technology has several attractive features including reduced stack weight and volume, decreased performance losses in stacking, improved sealing, versatility in incorporation of different types of cell construction (thin-film cells or sintered cells) and flexibility in gas flow configuration (cross-flow, co-flow or counter-flow). These features lead to lower cost, better performance, and enhanced reliability for the stack. The R&D work of this project focused on demonstrating fabrication, operability and cost effectiveness of the stack design and was conducted by University of California, San Diego (UCSD) in conjunction with OxEon Energy (OxEon). The key technical activities of this project involved prime-surface interconnect design and fabrication development; supported thin-film cell structure development; stack development; stack operation demonstration; and stack cost assessment. The results of these activities are summarized in this report.

30 DIRECT ENERGY CONVERSION↗

Regulating crystallization to maintain balanced carrier mobility via ternary strategy in blade-coated flexible organic solar cells

Regulating the crystallization of donor and acceptor to maintain balanced carrier mobility is of great importance to fabricate efficient organic solar cells (OSCs). Herein, the balanced crystallinity between donor and acceptor was finely controlled in blade-coated OSCs. By adding high crystalline FOIC into PBDB-T:ITIC system, a balanced carrier mobility was achieved, resulting in the much improved fill factor. The optimized ternary device exhibits an increased current density, due to the enhanced light-harvesting efficiency with complementary absorption and the morphology change. Morphology characterization demonstrated that the ternary film exhibits a highly balanced crystallinity between the donor and acceptor on account of the formation of acceptor alloy. Moreover, the ternary film not only possesses a small domain size, but also exhibits a high domain purity as compared to both binary films. Encouragingly, a highest power conversion efficiency (PCE) of 10.68% was obtained for the blade-coated ternary OSCs. In addition, the blade-coated flexible large-area (105 mm 2 ) OSC based on PBDB-T:ITIC:FOIC ternary system also exhibits a high PCE of 9.81%, showing great potential in the high-throughput fabrication of OSCs.

14 SOLAR ENERGY↗