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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Contact in the Unitary Fermi Gas across the Superfluid Phase Transition

A quantity known as the contact is a fundamental thermodynamic property of quantum many-body systems with short-range interactions. Determination of the temperature dependence of the contact for the unitary Fermi gas of infinite scattering length has been a major challenge, with different calculations yielding qualitatively different results. Here we use finite-temperature auxiliary-field quantum Monte Carlo (AFMC) methods on the lattice within the canonical ensemble to calculate the temperature dependence of the contact for the homogeneous spin-balanced unitary Fermi gas. We extrapolate to the continuum limit for 40, 66, and 114 particles, eliminating systematic errors due to finite-range effects. We observe a dramatic decrease in the contact as the superfluid critical temperature is approached from below, followed by a gradual weak decrease as the temperature increases in the normal phase. Our theoretical results are in excellent agreement with the most recent precision ultracold atomic gas experiments. Here, we also present results for the energy as a function of temperature in the continuum limit.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Local nm-Scale Imaging of Electrical Contact for Series Resistance Degradation of Silicon Solar Cells

We report on an electrical conduction mechanism for series resistance (Rs) degradation observed in a utility scale solar farm by nm-scale imaging of the local resistance at the Ag/Si interface of c-Si front metallization. Scanning spreading resistance microscopy imaging revealed that the number of point or small area electrical contacts decreased in a degraded cell compared to an unaffected cell, demonstrating the direct root cause of the Rs degradation. The degraded cell shows both a morphological and chemical difference in the screen-printed finger contact compared to the unaffected cell, which likely caused the degradation during the long-term field service. The reduction in electrical contact is likely caused by a structural change: The Ag particles in contact with the Si cell aggregate into bulk Ag, and a highly resistive ceramic oxide is formed in a "belt" shape at the Ag/Si interface. This resistive belt with a thickness of ~1 um blocks the current conduction from cell emitter to the Ag grid. Our results demonstrate an example of the multi-scale characterization approach for understanding degradation mechanisms in photovoltaics.

c-Si solar cell↗
DOE OSTI2013

Atomic layer etching removal of damaged layers in a contact hole for low sheet resistance

A damaged layer remains on silicon substrates after high-aspect-ratio contact (HARC) etching when using a fluorocarbon gas. Atomic layer etching (ALET) is a technique that can be applied to remove the damaged layer of silicon, removing about 1.36 Å per etch cycle. The characteristics of contact damage removal by ALET are investigated and compared with the conventional damage removal technique of low-power CF{sub 4} plasma etching. The low-power CF{sub 4} plasma etching technique not only has inadequate etch depth control, but also introduces secondary damage by implanting impurities about 25 Å into the contact bottom of the silicon surface. However, ALET allows contact damage to be removed effectively without introducing secondary damage to the substrate, and with precision etch depth control at the angstrom scale. When ALET is applied subsequent to low-power CF{sub 4} plasma etching, the fluorine- and carbon-damaged silicon is effectively removed in about 10 cycles. The sheet resistance of HARC etched silicon decreases from 142 to 137 Ω/□ after using low-power CF{sub 4} plasma etching, and subsequent ALET treatment further decreases the sheet resistance to 129 Ω/□, which is close to the reference value of 124 Ω/□.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Damaged silicon contact layer removal using atomic layer etching for deep-nanoscale semiconductor devices

Silicon atomic layer etching (ALET) using Cl{sub 2} is applied to remove the damaged layer on a 30 nm contact silicon surface formed by high-energy reactive ions during high aspect ratio contact etching, and its effects on the damage removal characteristics are investigated. Compared to a conventional damage removal method, such as the low-power CF{sub 4} plasma treatment technique, ALET produces less secondary damage to the substrate and gives exact etch depth control and extremely high etch selectivity to the contact SiO{sub 2} insulating pattern mold. When ALET is applied after a conventional damage removal technique, the sheet resistance of the damaged contact silicon surface is improved to a level close to that of a clean silicon surface, while exact atomic-scale depth control is maintained without changes in the pattern mold profile.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Improvement of Ohmic contacts on Ga 2 O 3 through use of ITO-interlayers

In this work, the use of ITO interlayers between Ga 2 O 3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga 2 O 3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10 -5 Ω cm 2 were achieved after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga 2 O 3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Pulsed laser deposition nickel oxide on crystalline silicon as hole selective contacts

In this work, the authors report the use of pulsed laser deposition to fabricate nickel oxide layers on silicon and assess the applicability of this structure as a hole selective contact. Films were deposited at temperatures of 300, 500, 700, and 900 °C. Results from reflective high energy electron diffraction patterns indicate increasing crystallinity with temperature up to 500 °C. However, layers deposited at 900 °C are amorphous. Nevertheless, results from atomic force microscopy, contact resistance measurements, and photoluminescence lifetime imaging indicate that films deposited at 900 °C have the best film smoothness, lowest specific contact resistivity, and highest lifetimes, and therefore, they are best suited for hole selective contact applications. Kelvin probe force microscopy and x-ray photoelectron spectroscopy were also carried out to study the effects of deposition temperature.

42 ENGINEERING↗
DOE OSTI2019

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n{sup +}–n-Si Diffusion Silicon Structures

The temperature dependences of the specific contact resistance of silicon ρ{sub c} with a doping step are measured experimentally and described theoretically. The measurements are performed in the temperature range from 4.2 to 380 K. It is established that the contacts of the studied Au–Ti–Pd–n{sup +}–n-Si structures are ohmic. It is shown that minimal ρ{sub c} is implemented at T = 75 K. Its value rises both with a decrease in temperature (due to the freezing effect) and with an increase in temperature (due to the electron-enriched layer at the boundary with the bulk material). It is established that the bulk electron concentration strongly decreases in the near-contact region in a layer with a thickness on the order of one micron due to the compensation of silicon by deep acceptors appearing because of the formation of a rather high vacancy concentration during stress relaxation and the appearance of a high dislocation density, as well as due to their diffusion from the contact after heating to 450°C. The data on the occurrence of vacancy-type defects are confirmed by X-ray measurements. The dislocation density in the studied structures is also estimated from X-ray measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

The impact of the charge barrier height on Germanium (Ge) detectors with amorphous-Ge contacts for light dark matter searches

Germanium (Ge) detectors with ability of measuring a single electron–hole (e–h) pair are needed in searching for light dark matter (LDM) down to the MeV scale. We investigate the feasibility of Ge detectors with amorphous-Ge (a-Ge) contacts to achieve the sensitivity of measuring a single e-h pair, which requires extremely low leakage current. Three Ge detectors with a-Ge contacts are used to study the charge barrier height for blocking electrons and holes. Using the measured bulk leakage current and the Döhler–Brodsky model, we obtain the values for charge barrier height and the density of localized energy states near the Fermi energy level for the top and bottom contacts, respectively. We predict that the bulk leakage current is extremely small and can be neglected at helium temperature ( $$\sim $$ ~ 4 K). Thus, Ge detectors with a-Ge contacts possess the potential to measure a single e–h pair for detecting LDM particles.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2017

Novel Approach to Strengthening Ceramic Cathode Contact and Validation in a Generic Stack Test Fixture

The ceramic contact material at the cathode side has been identified as the weakest mechanical link in solid oxide fuel cells, due to poor sintering at low stack fabrication temperatures. In this work, a novel approach of mechanical interlocking with an engineered surface was proposed to strengthen LSM-type contacts. The engineered cathode surface was made by depositing large LSM20 granules onto a wet cathode print, followed by sintering. Granules of three sizes were tested (mesh #35, #60, and #100). Small coupons of anode-supported YSZ electrolyte with LSM cathode were joined at 850 and 950oC for 2h with LSM contact using either the engineered surface or plain surfaces. The results of contact strength measurements showed about 14 times increase with engineered surface compared to plain surfaces. Validation with a 2”x2” LSM-based cell in a generic stack fixture showed good thermal cycle stability with minimal change in ohmic impedance over ten cycles.

Chou, Yeong-Shyung↗
DOE OSTI2017

Experimental development of low-frequency shear modulus and attenuation measurements in mated rock fractures: Shear mechanics due to asperity contact area changes with normal stress

Reservoir core measurements can help guide seismic monitoring of fluid-induced pressure variations in tight fractured reservoirs including those targeted for supercritical CO 2 injection. We present the first seismic-frequency ‘room-dry’ measurements of fracture specific shear stiffness, using artificially fractured standard granite samples with different degrees of mating, a well-mated tensile fracture from a dolomite reservoir core, as well as simple roughened polymethyl methacrylate (PMMA) surfaces. We have adapted a low-frequency (0.01 to 100 Hz) shear modulus and attenuation apparatus to explore the seismic signature of fractures and understand the mechanics of asperity contacts under a range of normal stress conditions. Our instrument is unique in its ability to measure at low normal stresses (0.5 – 20 MPa), simulating 'open' fractures in shallow or high fluid pressure reservoirs. The accuracy of our instrument is demonstrated by calibration and comparison to ultrasonic measurements and low-frequency direct shear measurements of intact samples from the literature. Pressure sensitive film was used to measure real contact area of the fracture surfaces. The fractured shear modulus for the majority of the samples shows an exponential dependence on real contact area. A simple numerical model, with one bonded circular asperity, predicts this behavior and matches the data for the simple PMMA surfaces. The rock surfaces reach their intact moduli at lower contact area than the model predicts, likely due to more complex geometry. Lastly, we apply our results to a Linear-Slip Interface Model to estimate reflection coefficients and calculate shear wave time delays due to the lower wave velocities through the fractured zone. We find that cross-well surveys could detect even well-mated hard rock fractures assuming the availability of high repeatability acquisition systems.

58 GEOSCIENCES↗
DOE OSTI2021

Modeling Contact Angle vs. Temperature for the Quartz-Water-Decane System

Innovative approaches are needed to improve the efficiency of oil recovery technologies to meet the growing demands of fossil-fuel based energy consumption. Enhanced oil recovery (EOR) methods such as low-salinity waterflooding and chemically tuned waterflooding aim to optimize the reservoir’s wetting properties, detaching oil globules from rock surfaces and allowing easier oil flow through pore throats. This wetting behavior is commonly quantified by contact angle measurements of the rock-oil-brine interface, which have been thoroughly investigated and theorized for many systems at ambient temperatures and pressures. However, few studies exist for extending contact angle theories away from ambient conditions. In this paper, we model the contact angles of a quartz-water-decane system at elevated temperatures using the surface tension component (STC) approach. Temperature-dependent van der Waals [Lifshitz-van der Waals (LW)] interactions and hydrogen-bonding (acid-base) interactions were calculated and are incorporated into the model for the quartz-water-decane interface. Additionally, the Hough and White procedure was used to create temperature-dependent dielectric functions of quartz, water, and normal decane for calculations of Hamaker coefficients. Hamaker coefficients calculated this way are highly linear with temperature and agree well with Israelachvili’s approximation. The acid-base interactions likely contribute the most to system wettability changes. Resulting contact angles of the quartz-water-decane system shift from water-wet (16°) to slightly water-wet (57.4°) as temperature increases. The model was also successfully verified for the quartz-air-water system. Our results can be used in future studies to determine optimal injected water compositions for specific rock-oil-brine and other systems with consideration of reservoir temperature.

02 PETROLEUM↗
DOE OSTI2017

Printed Nano Cu and NiSi Contacts and Metallization for Solar Cell Modules

There has long been a desire to replace the front-side silver contacts in silicon solar cells. There are two driving forces to do this. First, silver is an expensive precious metal. Secondly, the process to use silver requires that it be formulated into screen print pastes that need a lead-containing glass frit, and the use of lead is forbidden in many parts of the world. Because of the difficulty in replacing these pastes and the attendant processes, lead exemptions have granted to solar cells. Copper has been the replacement metal of choice because it is significantly cheaper than silver and is very close to silver in electrical conductivity. Using processes which do not use lead, obviates it as an environmental contaminant. However, copper cannot be in contact with the silicon of the cell since it migrates through the silicon and causes defects which severely damage the efficiency of the cell. Hence, a conductive barrier must be placed between the copper and silicon and nickel, and especially nickel silicide, have been shown to be materials of choice. However, nickel must be sputtered and annealed to create the nickel silicide barrier, and copper has either been sputtered or plated. All of these processes require expensive, specialized equipment and plating uses environmentally unfriendly chemicals. Therefore, Intrinsiq proposed using printed nano nickel silicide ink (which we had previously invented) and printed nano copper ink to create these electrodes and barriers. We found that nano copper ink could be readily printed and sintered under a reducing atmosphere to give highly conductive grids. We further showed that nano nickel silicide ink could be readily jetted into grids on top of the silicon cell. It could then be annealed to create a barrier. However, it was found that the combination of printed NiSi and printed Cu did not give contact resistivity good enough to produce efficient cells. Only plated copper on top of the printed NiSi gave useful contact resistivity, and that proved to five to ten times less conductive than the commercial silver grids. Even so, the NiSi layer was a very good barrier to copper migration, even under harsh environmental conditions. Additionally, both plated copper and printed copper could be soldered to. While it may be possible to produce an all printed copper/nickel silicide top electrode for silicon cells, it was not easily demonstrated within the time and monetary constraints of the present project. Additionally, potential customers have told us that having to laser ablate the anti-reflection coating of cells to create a connection for NiSi, and the addition of two printing and annealing (sintering for copper) steps, adds too much expense to compensate for any potential cost savings from using copper. The cost benefits of copper have been further eroded by the facts that over the lifetime of this project, the cost of silver electrodes decreased due to manufacturers finding ways to use less and less silver, and inventing pastes which use less costly silver materials to begin with. All of these factors were considered and led to the decision to stop the program before actual manufacturing scale was attempted.

14 SOLAR ENERGY↗
DOE OSTI2019

Tank Closure Cesium Removal Project CST Simulant Cesium Batch Contact Kinetics Test Results and Column Performance Predictions

To evaluate the cesium removal capabilities of the caustic-washed R9120-B version of crystalline silicotitanate (CST) ion exchange media from Savannah River Site (SRS) waste during Tank Closure Cesium Removal (TCCR) column processing, batch contact kinetics tests were performed at 23 °C in SRS Average simulant. Cesium loading kinetics data was also collected (in current and previous testing; King, et al., 2018a) using the same simulant for an older CST sample (IE- 911) which was caustic-washed by the vendor many years ago and was recently retrieved from drums stored at SRS. (Note that R9120-B and IE-911 are believed to be identical materials, after the R9120-B was caustic washed by SRNL, and differ only by particle size and manufacturing date, and thus can be considered different batches). Although cesium loading kinetics testing can be conducted more rigorously using dynamic column tests, the batch contact method requires less simulant and considerably less experimental effort. Average percent removal data for batch contact samples for the two CST batches are provided in Table ES-1. Faster cesium uptake was observed with IE-911, although the loading rates for the two media batches were similar. After 5.5 hours of CST contact, 81% cesium removal was observed with R9120-B versus 86% removal with IE-911. Although these differences are small, the trend is consistent across the timed results, with the larger bead material always loading slower. These seemingly small differences in percent removal are believed to have a large impact on the column performance. Cesium loading curves for the two CST batches are provided in Figure ES-1 below. Faster cesium loading with IE-911 CST is presumed to be associated with the smaller average particle diameter (408 μm mean volume diameter) versus R9120-B (572 μm diameter). Cesium loading kinetic data was needed to conduct column performance comparisons (i.e., model predictions) for the two CST batches.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗
DOE OSTI2019

Tunneling Back-Contacted Photovoltaics

This project examined the merits of tunnel insulators sandwiched between silicon absorbers and electron- and hole-selective contact materials for decreasing recombination at this interface. Decreases in recombination at this interface hold the potential to increase efficiency in silicon photovoltaic technologies, while exploiting low temperature (< 300°C) growth methods. The key findings of this project were that incorporating thin (< 3 nm) alumina tunnel layers did decrease interface recombination rates, however not to the extent observed in thick (> 10 nm) layers. The project also found that the most important implementation of tunnel layer passivation occurred with MoOx hole selective materials, since direct Si-MoOx contact yielded very high recombination velocities (S > 1000 cm -s ). The primary impact on the state of the art is that this project showed there is merit to incorporation of tunnel insulators between absorbers (e.g., Si) and selective contact materials (e.g., MoOx) in decreasing interface recombination rates while still allowing for carrier extraction the selective contact layer and into a metal.

14 SOLAR ENERGY↗
DOE OSTI2023

Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor

Here we investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low rectification and high leakage current compared to contacts on as-grown films. By employing an optimized surface treatment to restore the GaN surface following UHPA, we obtain Schottky contacts with a high rectification ratio of ~10 9 , a near-unity ideality factor of 1.03, and a barrier height of ~0.9 eV. These characteristics enable the development of GaN junction barrier Schottky diodes employing Mg implantation and UHPA.

42 ENGINEERING↗
DOE OSTI2023

Comparative Study of TESS Photometry and Radial Velocities on Six Early K-type Contact Binaries with Similar Periods around 0.268 Day

High-precision light curves were extracted from TESScut images. Together with APOGEE and LAMOST medium-resolution spectra, a joint study was made for six early K-type contact binary candidates selected unbiasedly with orbital periods around 0.268 day. It is found that all of them (RV CVn, EK Com, V384 Ser, V1038 Her, EH CVn, and CSS_J125403.7+503945) are W-subtype shallow contact systems, though with different mass ratios (1/q = 0.27–0.62). The effective temperature differences between the binary components are around a few hundred kelvins. The original definitions of the A and W subtypes were compared with the customarily used methods, which rely on the shape or photometric solutions of the light curves. The latter two methods are not always reliable; therefore, the radial velocity analysis is strongly recommended. Through a collection of all available K-type contact binaries with both photometric and spectroscopic measurements, it is found that almost all of them are W-subtype systems, except for a few objects that have nearly identical temperatures for binary components. This W-subtype phenomenon for K-type contact binaries should be further checked with more samples in the future. Finally, the physical parameters of the targets were determined with joint data analysis, and the multiplicity is discussed for these targets. Objects V384 Ser and RV CVn are confirmed to very likely be triple systems from comprehensive analysis, while V1038 Her is a candidate of a triple system based on photometric and spectroscopic solutions.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2026

Data Associated with "Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass"

This is data associated with the publication " Identifying Suitable Front Contacts for High-Efficiency Cd(Se,Te) Solar Cells on Space-Qualified Cover Glass " by Aesha P. Patel, Ryan Muzzio, Matthew R. Young, Robert Morrissey, Suresh Chaulagain, B. Edward Sartor, Prabodika N. Kaluarachchi, Christian Velez, Joshua A. Brown, Joel N. Duenow, Stephen Glynn, Michael J. Heben, Zhaoning Song, Nikolas J. Podraza, Adam B. Phillips, Randy J. Ellingson, Matthew O. Reese. All data associated with each figure in the manuscript and supplementary should be available in this dataset. A readme file is also included to provide some guidance. Abstract: Deployment of photovoltaics in space requires devices that combine high-efficiency, low areal mass, and resilience to harsh environments. Historically, high-efficiency multijunction III–V materials have dominated space power systems; however, their high cost and limited manufacturing throughput motivate the exploration of scalable alternatives. While CdTe-based thin-film photovoltaics offer an attractive option, their performance on non-conventional substrates can suffer from front-contact instability under higher-temperature processing. Here, the role of front-contact chemistry in limiting cell performance is investigated using CdTe-based devices fabricated on 150 μm thick Ceria-doped space-qualified 0214 Corning glass. A matrix of four transparent conducting oxides (TCOs: CTO, AZO, ITO, IZO) combined with two n-type emitters (MZO, IGO) reveals chemical stability at the front interface—rather than absorber composition alone—governs recombination losses, voltage deficits, and device reproducibility. Chemically stable front-contact combinations suppress elemental diffusion and interfacial degradation, resulting in significantly improved carrier lifetimes and junction quality. These insights are validated through record-certified Cd(Se,Te) cell efficiencies of 18.4% under AM1.5G and 16.2% under AM0 illumination on ultra-thin glass. Beyond CdTe, this work provides a general framework for the rational selection of TCO/emitter interfaces in superstrate thin-film photovoltaics, including emerging technologies like metal halide perovskites, while enabling high-efficiency, lightweight photovoltaics for space applications.

14 SOLAR ENERGY↗
NASA NTRS1972

A reliable all-silver front contact for silicon solar cells

The feasibility of making an adherent and moisture degradation resistant silver-only front contact to silicon solar cells was demonstrated. Optimum fabrication processes and process sequences were determined for making such contacts. These contacts were found to also have good electrical characteristics. A back contact of aluminum-silver was also developed. This proved very satisfactory for low-temperature applications.

Lamneck, J. H., Jr.↗