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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 703 records · Page 39
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Electrospinning of ultra-high molecular weight polymers into aligned nanofibers and their application in chemical separations

Ultra-high molecular weight (UHMW, >10 6 g mol −1 ) vinyl polymers are increasingly accessible through photoiniferter polymerization, yet their behavior in electrospinning has received comparatively little attention. Here, we explore the electrospinning of UHMW poly(methyl acrylate), poly(methyl methacrylate), poly(N,N-dimethylacrylamide), and poly(styrene-co-pentafluorostyrene) synthesized by photoiniferter polymerization, with number-average molecular weights (M n ) greater than 1000 kDa and dispersities below 1.4. UHMW polymers form stable Taylor cones and discrete fibers at solution concentrations as low as 0.5 wt% due to their large number of entanglements, a threshold unachievable with low molecular weight (M n = 20–54 kDa) polymers of the same chemistry. Using poly(methyl methacrylate) and poly(styrene-co-pentafluorostyrene) as model systems, we demonstrate that fiber diameter can be tuned from 350 nm to 20 μm through systematic variation of polymer concentration (0.01 to 4 wt%) and flow rate (0.5 to 10 mL h −1 ). Additionally, we find that collector rotation rate governs fiber alignment, with highly aligned mats obtained with drum rotation speeds of 1000 RPM. Reversing the polarity of the electric field during electrospinning reorients the surface chemistry of these fiber mats without altering their microscale morphology, shifting the water contact angle by 7° (89° to 96°) and providing a two-fold binding capacity enhancement in cationic dye uptake. These results show that the high entanglement densities of UHMW vinyl polymers shift the accessible electrospinning window to dilute solutions and that electric-field polarity is a useful lever to control the surface chemistry in the resulting fibers.

Marquez, Joshua D. [University of Florida, Gainesv↗
DOE OSTI2025

Time Alignment of the CMS Hadron Calorimeter

The Hadron Calorimeter (HCAL) in the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC) was recently upgraded for Run 3 (2022-2025) to introduce depth segmentation and online timing measurements. With increased segmentation and readout channels, the HCAL provides new timing capabilities for jets and hadronic tau decays with nearly 4π coverage and sensitivity to highly displaced decays within the calorimeter volume. Recent HCAL timing scans provide a valuable look at artificially delayed jets in collision data and are crucial to improving the detector’s performance. Online timing is utilized for detector alignment based on positioning the pulse rising edge, achieving an alignment accuracy of 0.5 ns, considerably higher than previous energy-weighting based approaches. Using precision arrival time measurements, significant advances have been made in understanding the propagation of hadronic showers throughout the calorimeter.

Kopp, Gillian [Princeton Univ., NJ (United States)↗
DOE OSTI2014

Understanding resonant tunnel transport in non-identical and non-aligned clusters as applied to disordered carbon systems

We study the conductance spectra and the corresponding current-voltage characteristics of a set of three impurity clusters of different sizes arranged in the form of a scalene triangle and compare with the transport of their horizontal and vertical configurations. The tuning capability of resonant tunnelling features in a quantum dot device made of these non-aligned impurity clusters is demonstrated by re-distributing their diameters and inter-cluster distances in a systematic manner. By manipulating the inter-cluster coupling for a scalene triangular configuration, the transition of current-voltage curves from a step-like feature to a negative differential resistance can be produced. This process also yields conductance features for triangular configurations, which can be compared to the quantum dot structures perfectly aligned to the direction of the propagating wavevector. The strength of inter-cluster coupling or order parameter for these configurations is analysed from the relative variation of the width and the energy difference of the sharp and broad peaks observed in the density of states spectra. Based on the relative change of the inter-cluster coupling with the cluster configurations, a transport model applicable to structurally inhomogeneous systems is proposed in order to explain the experimentally observed variation of the energy band gap with the disorder parameters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Experimental and theoretical studies of band gap alignment in GaAs{sub 1−x}Bi{sub x}/GaAs quantum wells

Band gap alignment in GaAs{sub 1−x}Bi{sub x}/GaAs quantum wells (QWs) was studied experimentally by photoreflectance (PR) and theoretically, ab initio, within the density functional theory in which the supercell based calculations are combined with the alchemical mixing approximation applied to a single atom in a supercell. In PR spectra, the optical transitions related to the excited states in the QW (i.e., the transition between the second heavy-hole and the second electron subband) were clearly observed in addition to the ground state QW transition and the GaAs barrier transition. This observation is clear experimental evidence that this is a type I QW with a deep quantum confinement in the conduction and valence bands. From the comparison of PR data with calculations of optical transitions in GaAs{sub 1−x}Bi{sub x}/GaAs QW performed for various band gap alignments, the best agreement between experimental data and theoretical calculations has been found for the valence band offset of 52 ± 5%. A very similar valence band offset was obtained from ab initio calculations. These calculations show that the incorporation of Bi atoms into GaAs host modifies both the conduction and the valence band. For GaAs{sub 1−x}Bi{sub x} with 0 < x < 0.074, the conduction band shifts lineary at a rate of ∼33 meV per % Bi, which only slightly decreases with Bi concentration. Whereas the valance band shift is clearly non-linear. Reducing initially at a rate of ∼51 meV per % Bi for low concentrations of Bi and then at a significantly reduced rate of ∼20 meV per % Bi near the end of the studied composition range. The overall reduction rate of the band gap is parabolic and the reduction rates change from ∼84 to ∼53 meV per % Bi for lower and higher Bi concentrations, respectively. The calculated shifts of valence and conduction bands give the variation of valence (conduction) band offset between GaAs{sub 1−x}Bi{sub x} and GaAs in the range of ∼60%–40% (∼40%–60%), which is in good agreement with our conclusion derived from PR measurements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

First-principle natural band alignment of GaN / dilute-As GaNAs alloy

Density functional theory (DFT) calculations with the local density approximation (LDA) functional are employed to investigate the band alignment of dilute-As GaNAs alloys with respect to the GaN alloy. Conduction and valence band positions of dilute-As GaNAs alloy with respect to the GaN alloy on an absolute energy scale are determined from the combination of bulk and surface DFT calculations. The resulting GaN / GaNAs conduction to valence band offset ratio is found as approximately 5:95. Our theoretical finding is in good agreement with experimental observation, indicating the upward movements of valence band at low-As content dilute-As GaNAs are mainly responsible for the drastic reduction of the GaN energy band gap. In addition, type-I band alignment of GaN / GaNAs is suggested as a reasonable approach for future device implementation with dilute-As GaNAs quantum well, and possible type-II quantum well active region can be formed by using InGaN / dilute-As GaNAs heterostructure.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Direct current injection and thermocapillary flow for purification of aligned arrays of single-walled carbon nanotubes

Aligned arrays of semiconducting single-walled carbon nanotubes (s-SWNTs) represent ideal configurations for use of this class of material in high performance electronics. Development of means for removing the metallic SWNTs (m-SWNTs) in as-grown arrays represents an essential challenge. Here, we introduce a simple scheme that achieves this type of purification using direct, selective current injection through interdigitated electrodes into the m-SWNTs, to allow their complete removal using processes of thermocapillarity and dry etching. Experiments and numerical simulations establish the fundamental aspects that lead to selectivity in this process, thereby setting design rules for optimization. Single-step purification of arrays that include thousands of SWNTs demonstrates the effectiveness and simplicity of the procedures. The result is a practical route to large-area aligned arrays of purely s-SWNTs with low-cost experimental setups.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Orbital alignment at the internal interface of arylthiol functionalized CdSe molecular hybrids

Organic-inorganic nanoparticle molecular hybrid materials are interesting candidates for improving exciton separation in organic solar cells. The orbital alignment at the internal interface of cadmium selenide (ArS-CdSe) hybrid materials functionalized with covalently attached arylthiolate moieties was investigated through X-ray photoemission spectroscopy (XPS) and ultraviolet photoemission spectroscopy (UPS). A physisorbed interface between arylthiol (ArSH) ligands and CdSe nanoparticles was also investigated for comparison. This interface was created via a multi-step thin film deposition procedure in-vacuo, where the surface was characterized after each experimental step. This enabled the direct comparison of ArSH/CdSe interfaces produced via physisorption and ArS-CdSe covalently attached hybrid materials, which rely on a chemical reaction for their synthesis. All material depositions were performed using an electrospray deposition, which enabled the direct injection of solution-originating molecular species into the vacuum system. This method allows XPS and UPS measurements to be performed immediately after deposition without exposure to the atmosphere. Transmission electron microscopy was used to determine the morphology and particle size of the deposited materials. Ultraviolet-visible spectroscopy was used to estimate the optical band gap of the CdSe nanoparticles and the HOMO-LUMO gap of the ArSH ligands. These experiments showed that hybridization via covalent bonds results in an orbital realignment at the ArSH/CdSe interface in comparison to the physisorbed interface. The orbital alignment within the hybrid caused a favorable electron injection barrier, which likely facilitates exciton-dissociation while preventing charge-recombination.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Alignment of graphene oxide nanostructures between microgap electrodes via dielectrophoresis for hydrogen gas sensing applications

Graphene oxide (GO) nanostructures have been aligned between conducting electrodes via dielectrophoresis (DEP) with different electrical configurations. The arrangement of ground with respect to peak-to-peak voltage (V{sub pp}) plays a crucial role in manipulating the GO nanostructures. Grounds on both sides of the V{sub pp} electrode give an excellent linking of GO nanostructures which is explained by scanning electron microscopy and current-voltage characteristics. A finite element method simulation explains the electric field and voltage variation profile during DEP process. The optimized aligned GO nanostructures are used as hydrogen gas sensor with a sensitivity of 6.0% for 800 ppm hydrogen gas.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Schottky-contacted vertically self-aligned ZnO nanorods for hydrogen gas nanosensor applications

Vertically well aligned ZnO nanorods (NRs) were grown on Si(100) substrate using RF magnetron sputtering technique. Scanning electron microscopy images confirms uniform distribution of NRs on 2 in. wafer with average diameter, height and density being ∼75 nm, ∼850 nm, and ∼1.5 × 10{sup 10} cm{sup −2}, respectively. X-ray diffraction reveals that the ZnO NRs are grown along c-axis direction with wurtzite crystal structure. Cathodoluminescence spectroscopy, which shows a single strong peak around 3.24 eV with full width half maxima 130 meV, indicates the high crystalline and optical quality of ZnO and very low defect density. Vertically aligned nanosensors were fabricated by depositing gold circular Schottky contacts on ZnO NRs. Resistance responses of nanosensors were observed in the range from 50 to 150 °C in 1% and 5% hydrogen in argon environment, which is below and above the explosive limit (4%) of hydrogen in air. The nanosensor's sensitivity increases from 11% to 67% with temperature from 50 to 150 °C and also shows fast response time (9–16 s) and moderate recovery time (100–200 s). A sensing mechanism is proposed based on Schottky barrier changes at heterojunctions and change in depletion region of NRs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Band alignment of HfO{sub 2}/multilayer MoS{sub 2} interface determined by x-ray photoelectron spectroscopy: Effect of CHF{sub 3} treatment

The energy band alignment between HfO{sub 2}/multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The HfO{sub 2} was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 1.98 eV and a conduction band offset (CBO) of 2.72 eV were obtained for the HfO{sub 2}/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the HfO{sub 2}/ML-MoS{sub 2} interface were found to be 2.47 eV and 2.23 eV, respectively. The band alignment difference is believed to be dominated by the down-shift in the core level of Hf 4d and up-shift in the core level of Mo 3d, or the interface dipoles, which caused by the interfacial layer in rich of F.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Self-aligned grating couplers on template-stripped metal pyramids via nanostencil lithography

We combine nanostencil lithography and template stripping to create self-aligned patterns about the apex of ultrasmooth metal pyramids with high throughput. Three-dimensional patterns such as spiral and asymmetric linear gratings, which can couple incident light into a hot spot at the tip, are presented as examples of this fabrication method. Computer simulations demonstrate that spiral and linear diffraction grating patterns are both effective at coupling light to the tip. The self-aligned stencil lithography technique can be useful for integrating plasmonic couplers with sharp metallic tips for applications such as near-field optical spectroscopy, tip-based optical trapping, plasmonic sensing, and heat-assisted magnetic recording.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Behavior of oxidized platinum nanoparticles on an aligned carbon nanotube forest

We observed and analyzed the behavior of platinum nanoparticles (PtNPs) supported on aligned-carbon nanotubes (CNTs) at high temperatures by X-ray photoelectron spectroscopy and high-resolution transmission electron microscope observations. We found that the PtNPs moved toward the inner-side along each CNT on which they were deposited. The mechanism of this behavior is related to the redox reaction of Pt with the carbon atoms in the CNT. We also performed in-situ observation of this process at a high temperature using an environmental transmission electron microscope under an oxygen atmosphere. We found that the PtNPs penetrated down into a high-density aligned CNT forest along the tube axis and that the PtNPs changed their shape to fit the structure of the CNTs during their movement.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Alignment, orientation, and Coulomb explosion of difluoroiodobenzene studied with the pixel imaging mass spectrometry (PImMS) camera

Laser-induced adiabatic alignment and mixed-field orientation of 2,6-difluoroiodobenzene (C 6 H 3 F 2 I) molecules are probed by Coulomb explosion imaging following either near-infrared strong-field ionization or extreme-ultraviolet multi-photon inner-shell ionization using free-electron laser pulses. The resulting photoelectrons and fragment ions are captured by a double-sided velocity map imaging spectrometer and projected onto two position-sensitive detectors. The ion side of the spectrometer is equipped with a pixel imaging mass spectrometry camera, a time-stamping pixelated detector that can record the hit positions and arrival times of up to four ions per pixel per acquisition cycle. Thus, the time-of-flight trace and ion momentum distributions for all fragments can be recorded simultaneously. Finally, we show that we can obtain a high degree of one-and three-dimensional alignment and mixed-field orientation and compare the Coulomb explosion process induced at both wavelengths

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Probing the band alignment in rectifying SrIrO 3 /Nb:SrTiO 3 heterostructures

Here, we have examined the band alignment in SrIrO 3 /Nb:SrTiO 3 (001) heterojunctions at room temperature using three independent techniques: current–voltage and capacitance–voltage measurements and internal photoemission spectroscopy. We find near-ideal rectifying behavior across the junction, which provides the opportunity to establish the band alignment via Schottky barrier height extractions in the metal-semiconductor junction approximation. The Schottky barrier height deduced from these measurements agrees well with each other within ~14%, with an average value of 1.44 ± 0.11 eV. These results provide a foundation for designing oxide heterostructures to harness the strong spin-orbit coupling and electrochemical properties of strontium iridate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Angular alignment and fidelity of neutron phase-gratings for improved interferometer fringe visibility

The recent development of phase-grating moiré neutron interferometry promises a wide range of impactful experiments from dark-field imaging of material microstructure to precise measurements of fundamental constants. However, the contrast of 3% obtained using this moiré interferometer was well below the theoretical prediction of 30% using ideal gratings. It is suspected that non-ideal aspects of the phase-gratings was a leading contributor to this deficiency and that phase-gratings needed to be quantitatively assessed and optimized. Here we characterize neutron diffraction from phase-gratings using Bragg diffraction crystals to determine the optimal phase-grating orientations. We show well-defined diffraction peaks and explore perturbations to the diffraction peaks and the effects on interferometer contrast as a function of grating alignment. This technique promises to improve the contrast of the grating interferometers by providing in-situ aides to grating alignment.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2019

One-directional thermal transport in densely aligned single-wall carbon nanotube films

Individual carbon nanotubes (CNTs) possess extremely high thermal conductivities. However, the thermal conductivities and their anisotropy of macroscopic assemblies of CNTs have so far remained small. Here, we report the results of directional thermal transport measurements on a nearly perfectly aligned CNT film fabricated via controlled vacuum filtration. We found the thermal conductivity to be 43 ± 2.2 W m -1 K -1 with a record-high thermal anisotropy of 500. From the temperature dependence of the thermal conductivity and its agreement with the atomistic phonon transport calculation, we conclude that the effect of intertube thermal resistance on heat conduction in the alignment direction is negligible because of the large contact area between CNTs. These observations thus represent ideal unidirectional thermal transport, i.e., the thermal conductivity of the film is determined solely by that of individual CNTs.

42 ENGINEERING↗
DOE OSTI2020

Rotational self-alignment of graphene seeds for nanoribbon synthesis on Ge(001) via chemical vapor deposition

The chemical vapor deposition of CH 4 on Ge(001) results in the anisotropic synthesis of graphene nanoribbons that are aligned to Ge$\langle$110$\rangle$ and have faceted armchair edges, sub-10 nm widths, and lengths greater than 100 nm. The utilization of small graphene seeds to initiate nanoribbon synthesis provides control over the nanoribbon placement and orientation. However, in order to exclusively grow nanoribbons and suppress the concomitant growth of lower aspect ratio crystals, it is imperative to control the crystallographic orientation of the seeds with respect to the Ge lattice. Here, we demonstrate that when seeds are less than 18 nm in diameter, they are able to rotate upon annealing at 910 °C prior to nanoribbon synthesis. The effect of this rotation on the resulting nanoribbons’ orientation is characterized as a function of the diameter and initial crystallographic orientation of the seeds. The seeds preferentially rotate to an orientation in which an armchair direction of their lattice is parallel to Ge$\langle$110$\rangle$—subsequently maximizing the anisotropy in growth kinetics. By exploiting this seed rotation phenomenon, we demonstrate the fabrication of seamless nanoribbon meshes and gain understanding that will affect future efforts to create arrays of unidirectionally aligned nanoribbons.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Roles of bandgrading, lifetime, band alignment, and carrier concentration in high-efficiency CdSeTe solar cells

CdSeTe alloying has significantly increased the efficiency of CdTe-based solar technology. Here, computational modeling compares how different CdSeTe bandgrading, carrier lifetimes, band alignment, and carrier concentrations contribute to transport, recombination, and performance. We find that the gain in photocurrent caused by bandgap narrowing alone is insufficient to describe experimental efficiency gains. Performance can be increased by adjusting CdSeTe compositions and bandgrading depths. However, these performance gains are small relative to the contributions of enhanced lifetime by Se alloying, which can explain record cell efficiency gains with minimal open-circuit voltage loss despite significant bandgap narrowing. Similarly, CdSeTe band alignment shifts can significantly increase performance if front interface recombination is prevalent. For a wide range of CdSeTe grading profiles, the hole density is a critical component to achieve efficiencies exceeding 25%.

36 MATERIALS SCIENCE↗