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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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677 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Amplitude analysis and branching fraction measurement of the decay $D_s^{+} → K^+π^+π^-$

Using 6.32 fb -1 of e + e - collision data collected at the center-of-mass energies between 4.178 and 4.226 GeV with the BESIII detector, we perform an amplitude analysis of the decay D$^+_s$ → K + π + π - and determine the amplitudes of the various intermediate states. The absolute branching fraction of D$^+_s$ → K + π + π - is measured to be (6.11 ± 0.18 stat. ± 0.11 syst. ) x 10 -3 . The branching fractions of the dominant intermediate processes D$^+_s$ → K + ρ 0 , ρ 0 → π + π - and D$^+_s$ → K*(892) 0 π + , K*(892) 0 → K + π - are determined to be (1.96 ± 0.19 stat . ± 0.23 syst. ) x 10 -3 and (1.85 ± 0.12 stat . ± 0.13 syst .) x 10 -3 , respectively. The intermediate resonances f 0 (500), f 0 (980), and f 0 (1370) are observed for the first time in this channel.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Infrared spectroscopy of RG–Co + (H 2 O) complexes (RG = Ar, Ne, He): The role of rare gas “tag” atoms

RG n –Co + (H 2 O) cation complexes (RG = Ar, Ne, He) are generated in a supersonic expansion by pulsed laser vaporization. Here, complexes are mass-selected using a time-of-flight spectrometer and studied with infrared laser photodissociation spectroscopy, measuring the respective mass channels corresponding to the elimination of the rare gas “tag” atom. Spectral patterns and theory indicate that the structures of the ions with a single rare gas atom have this bound to the cobalt cation opposite the water moiety in a near-C 2v arrangement. The O–H stretch vibrations of the complex are shifted compared to those of water because of the metal cation charge-transfer interaction; these frequencies also vary systematically with the rare gas atom attached. The efficiencies of photodissociation also vary with the rare gas atoms because of their widely different binding energies to the cobalt cation. The spectrum of the argon complex could only be measured when at least three argon atoms were attached. In the case of the helium complex, the low binding energy allows the spectra to be measured for the low-frequency H–O–H scissors bending mode and for the O–D stretches of the deuterated analog. The partially resolved rotational structure for the antisymmetric O–H and O–D stretches reveals the temperature of these complexes (6 K) and establishes the electronic ground state. The helium complex has the same 3 B 1 ground state as the tag-free complex studied previously by Metz and co-workers (2013), but the A rotational constant is contaminated by vibrational averaging from the bending motion of the helium.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Transient heat transfer of superfluid He 4 in nonhomogeneous geometries: Second sound, rarefaction, and thermal layer

Transient heat transfer in superfluid 4 He (He II) is a complex process that involves the interplay of the unique counterflow heat-transfer mode, the emission of second-sound waves, and the creation of quantized vortices. Many past researches focused on homogeneous heat transfer of He II in a uniform channel driven by a planar heater. Here, we report our systematic study of He II transient heat transfer in nonhomogeneous geometries that are pertinent to emergent applications. By solving the He II two-fluid equations of motion coupled with Vinen's equation for vortex-line density, we examine and compare the characteristics of transient heat transfer from planar, cylindrical, and spherical heaters in He II. Our results show that as the heater turns on, an outgoing second-sound pulse emerges, within which the vortex-line density grows rapidly. These vortices attenuate the second sound and result in a heated He II layer in front of the heater, i.e., the thermal layer. In the planar case where the vortices are created throughout the space, the second-sound pulse is continuously attenuated, leading to a thick thermal layer that diffusely spreads following the heat pulse. On the contrary, in the cylindrical and the spherical heater cases, vortices are created mainly in a thin thermal layer near the heater surface. As the heat pulse ends, a rarefaction tail develops following the second-sound pulse, in which the temperature drops. This rarefaction tail can promptly suppress the thermal layer and take away the deposited thermal energy. The effects of the heater size, heat flux, pulse duration, and temperature on the thermal-layer dynamics are discussed. We also show how the peak heat flux for the onset of boiling in He II can be studied in our model.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Search for the radiative $Ξ_b^{-}$ → $Ξ^-γ$ decay

The first search for the rare radiative decay $Ξ_b^{-}$ → $Ξ^-γ$ is performed using data collected by the LHCb experiment in proton-proton collisions at a center-of-mass energy of 13 TeV, corresponding to an integrated luminosity of 5.4 fb -1 . $Ξ_b^{-}$ → $Ξ^-J/ψ$ channel is used as normalization. No $Ξ_b^{-}$ → $Ξ^-γ$ signal is found and an upper limit of $\mathcal{B}$( $Ξ_b^{-}$ → $Ξ^-γ$) < 1.3 x 10 -4 at 95% confidence level is obtained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Biochemical Process Modeling and Simulation (BPMS)

The Biochemical Process Modeling and Simulation project aims to reduce the cost and time of research by applying theory, modeling, and simulation to the most relevant bottlenecks in the biochemical process. We use molecular modeling, quantum mechanics, metabolic modeling, fluid dynamics, and reaction-diffusion methods in close collaboration with pretreatment, hydrolysis, upgrading, and TEA. The project's outcomes are increased yields and efficiency of the biochemical process, added value to products, and reduced price of fuels by specifically targeting catalytic efficiency, reactor design, enzyme efficiency, and microbial design. We work closely with experimental projects to identify problems and iterate with experiments to find and refine solutions. By working with experimentalists, we decide on problems that can be solved with simulation that could otherwise not be solved or would take too long with experiment alone to reach BETO's targets. Over the years, we have produced solutions that have resulted in determining the most likely fatty-acid derivative for passive transport out of bacteria that upgrade biomass, and we have also designed enzyme mutations for enhanced lignin upgrading. Metabolic models have been developed to tune the activity of 2,3 butanediol production for the 2030 target. A computational method to deliver understanding of how complex omics data can be interpreted in the metabolic pathways of organisms used in the Agile Biofoundry. We have found methods to overcome specific barriers and continue to develop those methods. Our reactor studies have guided the design of both the microbes and reactors for aerobic and micro-aerobic production at all scales and have been instrumental in improving the accuracy of techno-economic analysis models. This project is essential in the process of selecting the final processes for 2030 SAF production targets. More specifically, recently, we have: 1) Predicted the strength of the basic structural interactions in commodity plastics to provide guidance for plastics upcycling strategies. 2) Developed computational tool to improve the characterization of lignin-derived compounds 3) Developed new methodologies to enable Machine Learning-based Directed Evolution for protein engineering. 4) Developed Machine Learning methods to predict protein promiscuity and mutations to further improve microbial and enzymatic driven processes and demonstrated the utility of ML approaches to engineering proteins from sparse experimental datasets. 5) Developed new methods to enable high-fidelity simulation of aerobic fermentation at industrial scale and resolving mismatch of time scales through subcycling/operator splitting 7) Identified the difficulty in preventing local high-oxygen conditions in industrial bubble columns, which leads to less-desirable acetoin production, suggesting future research directions in alternative reactor configurations (e.g loop reactors, shallow-channel reactors).

BIOMASS FUELS↗
DOE OSTI2022

Search for the decay $h_c$ → $π^0J/ψ$

A search for the decay $h_c$ → $π^0J/ψ$ is performed using a sample of hc produced in the reaction $e^+e^-$ → $π^+π^-h_c$. The data samples were collected with the BESIII detector at center-of-mass energies between 4.189 and 4.437 GeV, corresponding to a total integrated luminosity of 11 fb -1 . No significant signal is observed. Upper limits on the branching ratio $\mathcal{B}$($h_c$ →$π^oJ/ψ$)/$\mathcal{B}$($h_c$ →$γη_c$ →$γK^+K_-π^o$) and on the branching fraction $\mathcal{B}$($h_c$ →$π^oJ/ψ$) are determined to be 7.5 x 10 -2 and 4.7 x 10 -4 at 90% confidence level, respectively. The latter is derived from the former using the measured branching fraction of the normalization channel. This is the first determination of the upper limit of the decay $h_c$ → $π^0J/ψ$

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Off-state magnetoresistance in long-channel germanium Schottky-barrier MOSFETs

An increasing magnetic field perpendicular to an undoped semiconductor surface at low temperature is known to strengthen the binding of localized electrons to stationary ions, as the wavefunction's tails evolve from exponential to Gaussian. It is also known that application of a high bias voltage to a depleted semiconductor can liberate bound charge and induce a large drop in electrical resistance. We connect these established results to experimental electrical transport measurements on off-state germanium Schottky-barrier metal–oxide–semiconductor field-effect transistor (MOSFETs) with an aluminum oxide insulating dielectric and platinum germanide contacts. We make measurements at the three distinct orientations of the magnetic field with respect to the substrate and the current. At 6 K, we observe sharp attenuation of current by more than 2 orders of magnitude, within 60 mT, at a crossover magnetic field perpendicular to the substrate. A 1 T magnetic field attenuates the current by more than 4 orders of magnitude. The strength of the attenuation and the value of the crossover field are controlled by both the gate–source and drain–source voltages. The attenuation is much weaker when the magnetic field is parallel to the current. Finally, we orient the magnetic field parallel to the substrate, but perpendicular to the current, allowing us to distinguish charge hopping at the oxide interface from charge hopping in the bulk. In conclusion, this large off-state magnetoresistance can be exploited for cryogenic magnetic- and photo-detection, and for high-bias, low-leakage MOSFETs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Probing crystallographic orientation-specific carrier lifetimes in epitaxial Ge/AlAs and InGaAs/InP heterostructures

Current silicon (Si) fin transistors rely on (100) and (110) crystallographically oriented surfaces, and the proposed alternate channel transistor technology comprises materials with higher mobility than Si. Crystallographically oriented epitaxial germanium (Ge) and indium–gallium arsenide (InGaAs) have the potential to replace Si in ultra-low power transistor applications. The higher carrier lifetime is an indication of superior material quality, which relates to the leakage current of a fin transistor. To gain insights into the carrier recombination dynamics in these crystallographically oriented epitaxial Ge and InGaAs layers, the contactless microwave photoconductive decay (μ-PCD) technique at an excitation wavelength of 1500 nm was employed to probe the orientation-specific carrier lifetimes. Highly effective carrier lifetimes >200 ns for (100)Ge/AlAs and (110)Ge/AlAs, and ~80 ns for (111)Ge/AlAs heterostructures, were extracted at room temperature. The measured carrier lifetime has a strong dependence on the surface orientation, which could be related to orientation-specific bulk trap states present within the bandgap of Ge. The (111)Ge orientation has 3 times lower carrier lifetime compared to the (100)Ge and (110)Ge surface orientations. On the other hand, the carrier lifetimes of 125 μs and 10 ns were determined from (100)InGaAs/InP and (110)InGaAs/InP heterostructures, respectively. The reduction in carrier lifetimes in both (111)Ge and (110)InGaAs was due to high electrical conductivity or higher bulk trap states present within the bandgap as well as the facet-dependent growth of the (110)InGaAs layer on InP. A surface passivating layer is indispensable for these orientation-specific epitaxial layers to improve the carrier lifetime. Therefore, the higher carrier lifetimes from technologically interesting (100)Ge and (110)Ge surfaces would offer a path for the development of Ge-based ultra-low power electronics, and optoelectronic devices based on the (100)InGaAs layer.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Observation of $Λ^0_b$ → $D^+ρπ^-π^-$ and $Λ^0_b$ → $D^{*+}ρπ^-π^-$ decays

The multihadron decays $Λ^0_b$ → $D+ρπ-π-$ and $Λ^0_b$ → $D^*+ρπ-π-$ are observed in data corresponding to an integrated luminosity of 3 fb -1 , collected in proton-proton collisions at centre-of-mass energies of 7 and 8 TeV by the LHCb detector. Using the decay $Λ^0_b$ → $Λ^+_cπ^+π^-π^-$ as a normalisation channel, the ratio of branching fractions is measured to be $\frac {\mathcal{B} ( Λ^0_b → D^+ρπ^-π^-)} {\mathcal{B} (Λ^0_b → Λ^0_cπ^+π^-π^-)}$ x $\frac{\mathcal{B} (D^+ → K^-π^+π^+)} {\mathcal{B}(Λ^o_c → ρK^-π^-)}$ = (%.35 ± 0.21 ± 0.16)%, where the first uncertainty is statistical and the second systematic. The ratio of branching fractions for the $Λ^0_b$ → $D^{*+}ρπ^-π^-$ and $Λ^0_b$ → $D^+ρπ^-π^-$ decays is found to be $\frac {\mathcal{B} ( Λ^0_b → D^{*+}ρπ^-π^-)} {\mathcal{B} (Λ^0_b → D^+ρπ^-π^-)}$ X ($\mathcal{B} (D^{*+}→ D^+π^0)$ + $\mathcal{B} (D^{*+}→ D^+γ)$) = (61.3 ± 4.3 ± 4.0)%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Origin of Large Effective Phonon Magnetic Moments in Monolayer MoS 2

Recent helicity-resolved magneto-Raman spectroscopy measurement demonstrates large effective phonon magnetic moments of ~2.5 μ B in monolayer MoS 2 , highlighting resonant excitation of bright excitons as a feasible route to activate Γ-point circularly polarized phonons in transition metal dichalcogenides. However, a microscopic picture of this intriguing phenomenon remains lacking. In this work, we show that an orbital transition between the split conduction bands (Δ 0 = 4 meV) of MoS 2 couples to the doubly degenerate E" phonon mode (Ω 0 = 33 meV), forming two hybridized states. Our phononic and electronic Raman scattering measurements capture these two states: (i) one with predominantly phonon contribution in the helicity-switched channels and (ii) one with primarily orbital contribution in the helicity-conserved channels. An orbital-phonon coupling model successfully reproduces the large effective magnetic moments of the circularly polarized phonons and explains their thermodynamic properties. Strikingly, the Raman mode from the orbital transition is superimposed on a strong quasi-elastic scattering background, indicating the presence of spin fluctuations. As a result, the electrons excited to the conduction bands through the exciton exhibit paramagnetic behavior although MoS 2 is generally considered as a nonmagnetic material. By depositing nanometer-thickness nickel thin films on monolayer MoS 2 , we tune the electronic structure so that the A exciton perfectly overlaps with the 633 nm laser. The optimization of resonance excitation leads to pronounced tunability of the orbital-phonon hybridized states. Our results generalize the orbital-phonon coupling model of effective phonon magnetic moments to material systems beyond the paramagnets and magnets.

2D transition metal dichalcogenide↗
DOE OSTI2022

Search for new hadronic decays of $h_c$ and observation of $h_c$ → $p\overline{p}η$

A search for the hadronic decays of the $h_c$ meson to the final states $p\overline{p}π^+π^-π^o$, $p\overline{p}η$, and $p\overline{p}π^o$ via the process $\psi$(3686) → $π^oh_c$ is performed using (4.48 ± 0.03) x 10 8 $\psi$(3686) events collected with the BESIII detector. The decay channel $h_c$ → $p\overline{p}η$ is observed for the first time with a significance greater than 5σ and a branching fraction of (6.41 ± 1.74 ± 0.53 ± 1.00) x 10 -4 , where the uncertainties are statistical, systematic, and that from the branching fraction of $\psi$(3686) → $π^oh_c$. Strong evidence for the decay $h_c$ → $p\overline{p}π^+π^-π^o$ is found with a significance of 4.9σ and a branching fraction of (3.84 ± 0.83 ± 0.69 ± 0.58) x 10 -3 . The significances include systematic uncertainties. No clear signal of the decay $h_c$ → $p\overline{p}π^o$ is found, and an upper limit of 6.59 x 10 -4 on its branching fraction is set at the 90% confidence level.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗