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At least 685 records · Page 38

Fabrication of Subnanometer-Precision Nanopores in Hexagonal Boron Nitride

Here, we demonstrate the fabrication of individual nanopores in hexagonal boron nitride (h-BN) with atomically precise control of the pore shape and size. Previous methods of pore production in other 2D materials typically create pores with irregular geometry and imprecise diameters. In contrast, other studies have shown that with careful control of electron irradiation, defects in h-BN grow with pristine zig-zag edges at quantized triangular sizes, but they have failed to demonstrate production and control of isolated defects. In this work, we combine these techniques to yield a method in which we can create individual size-quantized triangular nanopores through an h-BN sheet. The pores are created using the electron beam of a conventional transmission electron microscope; which can strip away multiple layers of h-BN exposing single-layer regions, introduce single vacancies, and preferentially grow vacancies only in the single-layer region. We further demonstrate how the geometry of these pores can be altered beyond triangular by changing beam conditions. Precisely size- and geometry-tuned nanopores could find application in molecular sensing, DNA sequencing, water desalination, and molecular separation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Mechanism for particle fractionalization and universal edge physics in quantum Hall fluids

Abstract Advancing a microscopic framework that rigorously unveils the underlying topological hallmarks of fractional quantum Hall (FQH) fluids is a prerequisite for making progress in the classification of strongly-coupled topological matter. We present a second-quantization framework that reveals an exact fusion mechanism for particle fractionalization in FQH fluids, and uncovers the fundamental structure behind the condensation of non-local operators characterizing topological order in the lowest-Landau-level. We show the first exact analytic computation of the quasielectron Berry connections leading to its fractional charge and exchange statistics, and perform Monte Carlo simulations that numerically confirm the fusion mechanism for quasiparticles. We express the sequence of (bosonic and fermionic) Laughlin second-quantized states, highlighting the lack of local condensation, and present a rigorous constructive subspace bosonization dictionary for the bulk fluid. Finally, we establish universal long-distance behavior of edge excitations by formulating a conjecture based on the DNA, or root state, of the FQH fluid.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Quantum memristors

Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative device, whose decoherence mechanism is controlled by a continuous-measurement feedback scheme, which accounts for the memory. Indeed, we provide numerical simulations showing that memory effects actually persist in the quantum regime. Our quantization method, specifically designed for superconducting circuits, may be extended to other quantum platforms, allowing for memristor-type constructions in different quantum technologies. As a result, the proposed quantum memristor is then a building block for neuromorphic quantum computation and quantum simulations of non-Markovian systems.

97 MATHEMATICS AND COMPUTING↗

Quantum driven dissipative parametric oscillator in a blackbody radiation field

We consider the general open system problem of a charged quantum oscillator confined in a harmonic trap, whose frequency can be arbitrarily modulated in time, that interacts with both an incoherent quantized (blackbody) radiation field and with an arbitrary coherent laser field. We assume that the oscillator is initially in thermodynamic equilibrium with its environment, a non-factorized initial density matrix of the system and the environment, and that at t = 0 the modulation of the frequency, the coupling to the incoherent and the coherent radiation are switched on. The subsequent dynamics, induced by the presence of the blackbody radiation, the laser field, and the frequency modulation, is studied in the framework of the influence functional approach. This approach allows incorporating, in analytic closed formulae, the non-Markovian character of the oscillator-environment interaction at any temperature as well the non-Markovian character of the blackbody radiation and its zero-point fluctuations. Expressions for the time evolution of the covariance matrix elements of the quantum fluctuations and the reduced density-operator are obtained.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Modified InGaN/GaN quantum wells with dual-wavelength green-yellow emission

Energy band engineering by indium pretreatment of the bottom GaN barriers and control of the growth temperature profile for the InGaN active layers were employed to improve the green-yellow emitting InGaN/GaN quantum well (QW). The modified InGaN/GaN QWs were investigated by various characterization techniques and demonstrated to be of good interface abruptness and well-defined indium concentration profile, composed of 0.52 nm In{sub 0.35}Ga{sub 0.65}N “wetting layer,” 1.56 nm In{sub 0.35-0.22}Ga{sub 0.65-0.78}N graded layers, and 1.56 nm In{sub 0.22}Ga{sub 0.78}N layer along the growth direction. Broad-band dual-wavelength green-yellow emission at about 497 and 568 nm was observed and attributed to the major contribution of enhanced interband transitions from the first and second quantized electron states “e1” and “e2” to the first quantized hole state “h1.” With the modified QW structure, electron overflow loss would be suppressed by filling of the excited electron state with electrons at high carrier injection density and reduction in polarization-induced band bending. APSYS simulation shows efficiency and droop improvements due to the enhanced overlapping of electron and hole wave functions inside the modified InGaN active layers, and the enhanced interband transitions involving the excited electron state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Modeling techniques for quantum cascade lasers

Quantum cascade lasers are unipolar semiconductor lasers covering a wide range of the infrared and terahertz spectrum. Lasing action is achieved by using optical intersubband transitions between quantized states in specifically designed multiple-quantum-well heterostructures. A systematic improvement of quantum cascade lasers with respect to operating temperature, efficiency, and spectral range requires detailed modeling of the underlying physical processes in these structures. Moreover, the quantum cascade laser constitutes a versatile model device for the development and improvement of simulation techniques in nano- and optoelectronics. This review provides a comprehensive survey and discussion of the modeling techniques used for the simulation of quantum cascade lasers. The main focus is on the modeling of carrier transport in the nanostructured gain medium, while the simulation of the optical cavity is covered at a more basic level. Specifically, the transfer matrix and finite difference methods for solving the one-dimensional Schrödinger equation and Schrödinger-Poisson system are discussed, providing the quantized states in the multiple-quantum-well active region. The modeling of the optical cavity is covered with a focus on basic waveguide resonator structures. Furthermore, various carrier transport simulation methods are discussed, ranging from basic empirical approaches to advanced self-consistent techniques. The methods include empirical rate equation and related Maxwell-Bloch equation approaches, self-consistent rate equation and ensemble Monte Carlo methods, as well as quantum transport approaches, in particular the density matrix and non-equilibrium Green's function formalism. The derived scattering rates and self-energies are generally valid for n-type devices based on one-dimensional quantum confinement, such as quantum well structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Kinetically constrained ring-polymer molecular dynamics for non-adiabatic chemical reactions

We extend ring-polymer molecular dynamics (RPMD) to allow for the direct simulation of general, electronically non-adiabatic chemical processes. The kinetically constrained (KC) RPMD method uses the imaginary-time path-integral representation in the set of nuclear coordinates and electronic states to provide continuous equations of motion that describe the quantized, electronically non-adiabatic dynamics of the system. KC-RPMD preserves the favorable properties of the usual RPMD formulation in the position representation, including rigorous detailed balance, time-reversal symmetry, and invariance of reaction rate calculations to the choice of dividing surface. However, the new method overcomes significant shortcomings of position-representation RPMD by enabling the description of non-adiabatic transitions between states associated with general, many-electron wavefunctions and by accurately describing deep-tunneling processes across asymmetric barriers. We demonstrate that KC-RPMD yields excellent numerical results for a range of model systems, including a simple avoided-crossing reaction and condensed-phase electron-transfer reactions across multiple regimes for the electronic coupling and thermodynamic driving force.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Deep proton tunneling in the electronically adiabatic and non-adiabatic limits: Comparison of the quantum and classical treatment of donor-acceptor motion in a protein environment

Analytical models describing the temperature dependence of the deep tunneling rate, useful for proton, hydrogen, or hydride transfer in proteins, are developed and compared. Electronically adiabatic and non-adiabatic expressions are presented where the donor-acceptor (D-A) motion is treated either as a quantized vibration or as a classical “gating” distribution. We stress the importance of fitting experimental data on an absolute scale in the electronically adiabatic limit, which normally applies to these reactions, and find that vibrationally enhanced deep tunneling takes place on sub-ns timescales at room temperature for typical H-bonding distances. As noted previously, a small room temperature kinetic isotope effect (KIE) does not eliminate deep tunneling as a major transport channel. The quantum approach focuses on the vibrational sub-space composed of the D-A and hydrogen atom motions, where hydrogen bonding and protein restoring forces quantize the D-A vibration. A Duschinsky rotation is mandated between the normal modes of the reactant and product states and the rotation angle depends on the tunneling particle mass. This tunnel-mass dependent rotation contributes substantially to the KIE and its temperature dependence. The effect of the Duschinsky rotation is solved exactly to find the rate in the electronically non-adiabatic limit and compared to the Born-Oppenheimer (B-O) approximation approach. The B-O approximation is employed to find the rate in the electronically adiabatic limit, where we explore both harmonic and quartic double-well potentials for the hydrogen atom bound states. Both the electronically adiabatic and non-adiabatic rates are found to diverge at high temperature unless the proton coupling includes the often neglected quadratic term in the D-A displacement from equilibrium. A new expression is presented for the electronically adiabatic tunnel rate in the classical limit for D-A motion that should be useful to experimentalists working near room temperature. This expression also holds when a broad protein conformational distribution of D-A equilibrium distances dominates the spread of the D-A vibrational wavefunction.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Thermal weights for semiclassical vibrational response functions

Semiclassical approximations to response functions can allow the calculation of linear and nonlinear spectroscopic observables from classical dynamics. Evaluating a canonical response function requires the related tasks of determining thermal weights for initial states and computing the dynamics of these states. A class of approximations for vibrational response functions employs classical trajectories at quantized values of action variables and represents the effects of the radiation-matter interaction by discontinuous transitions. Here, we evaluate choices for a thermal weight function which are consistent with this dynamical approximation. Weight functions associated with different semiclassical approximations are compared, and two forms are constructed which yield the correct linear response function for a harmonic potential at any temperature and are also correct for anharmonic potentials in the classical mechanical limit of high temperature. Approximations to the vibrational linear response function with quantized classical trajectories and proposed thermal weight functions are assessed for ensembles of one-dimensional anharmonic oscillators. This approach is shown to perform well for an anharmonic potential that is not locally harmonic over a temperature range encompassing the quantum limit of a two-level system and the limit of classical dynamics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Photoluminescence study of high density Si quantum dots with Ge core

Si quantum dots (Si-QDs) with Ge core were self-assembled on thermally grown SiO{sub 2} from alternate thermal decomposition of pure SiH{sub 4} and GeH{sub 4} diluted with He. When the sample was excited by the 979 nm line of a semiconductor laser, fairly broad photoluminescence (PL) spectra in the region of 0.6–0.8 eV were observed at room temperature. The observed PL spectra suggested that radiative recombination of photo-generated carriers through quantized states of Ge core is the dominant pathway for the emission from the dots, reflecting the type II energy band discontinuity between the Si clad and Ge core. We also found that P-δ doping to Ge core plays an important role in recombination through the quantized states in the valence band of Ge core and P donor levels.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Non-adiabatic dynamics of molecules in optical cavities

Strong coupling of molecules to the vacuum field of micro cavities can modify the potential energy surfaces thereby opening new photophysical and photochemical reaction pathways. While the influence of laser fields is usually described in terms of classical field, coupling to the vacuum state of a cavity has to be described in terms of dressed photon-matter states (polaritons) which require quantized fields. We present a derivation of the non-adiabatic couplings for single molecules in the strong coupling regime suitable for the calculation of the dressed state dynamics. The formalism allows to use quantities readily accessible from quantum chemistry codes like the adiabatic potential energy surfaces and dipole moments to carry out wave packet simulations in the dressed basis. The implications for photochemistry are demonstrated for a set of model systems representing typical situations found in molecules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Optical spectroscopy of molecular junctions: Nonequilibrium Green’s functions perspective

We consider optical spectroscopy of molecular junctions from the quantum transport perspective when radiation field is quantized and optical response of the system is simulated as photon flux. Using exact expressions for photon and electronic fluxes derived within the nonequilibrium Green function (NEGF) methodology and utilizing fourth order diagrammatic perturbation theory (PT) in molecular coupling to radiation field, we perform simulations employing realistic parameters. Results of the simulations are compared to the bare PT which is usually employed in studies on nonlinear optical spectroscopy to classify optical processes. We show that the bare PT violates conservation laws, while flux conserving NEGF formulation mixes optical processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Mini array of quantum Hall devices based on epitaxial graphene

Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux R{sub H,2} at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×R{sub H,2} = 2 h/e{sup 2} was smaller than the relative standard uncertainty of the measurement (<1 × 10{sup −7}) limited by the used resistance bridge.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Theory of electron transport and emission from a semiconductor nanotip

An sufficient mass based model accounting for the conduction band quantization in a high aspect ratio semiconductor nanotip is developed to describe injected electron transport and subsequent electron emission from the nanotip. A transfer matrix formalism is used to treat electron scattering induced by the variation in the tip diameter and in the electron emission. Numerical assessment of the scattering and emission probabilities is performed for the diamond parametrized nanotip model. Our scattering and emission models are further combined with a Monte Carlo (MC) approach to simulate electron transport through the nanotip. The MC simulations, additionally accounting for the electron-phonon scattering and externally applied electric field, are performed for a minimal nanotip model and an equivalent width diamond slab. An effect of the level quantization, electron scattering due to the nanotip diameter variation, and electron-phonon scattering on the nanotip emission properties are identified and compared with the case of a bulk slab.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

A complete quasiclassical map for the dynamics of interacting fermions

We present a strategy for mapping the dynamics of a fermionic quantum system to a set of classical dynamical variables. The approach is based on imposing the correspondence relation between the commutator and the Poisson bracket, preserving Heisenberg's equation of motion for one-body operators. In order to accommodate the effect of two-body terms, we further impose quantization on the spin-dependent occupation numbers in the classical equations of motion, with a parameter that is determined self-consistently. Expectation values for observables are taken with respect to an initial quasiclassical distribution that respects the original quantization of the occupation numbers. The proposed classical map becomes complete under the evolution of quadratic Hamiltonians and is extended for all even order observables. We show that the map provides an accurate description of the dynamics for an interacting quantum impurity model in the coulomb blockade regime, at both low and high temperatures. In conclusion, the numerical results are aided by a novel importance sampling scheme that employs a reference system to reduce significantly the sampling effort required to converge the classical calculations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Criteria for electronic growth of Au on layered semiconductors

An electronic growth mode has been reported to occur in several noble metals on MoS2 but has not been observed on other layered semiconductors. In this work, the experiments show that Au(111) islands initially follow an electronic growth mode on WS2, matching the quantization seen in Au/MoS2. However, while epitaxial nanostructures with similar features are observed on WSe2, there is no sign of electronic growth. Binding energy calculations show that multiple bonding sites have nearly the same energy on both WS2 and MoS2, while Au strongly prefers a single bonding site on WSe2. Having multiple sites with the same energy gives flexibility in interfacial bonding that can alleviate strain from the 9+% lattice mismatch in these systems, which would, otherwise, easily suppress quantum size effects from electronic growth modes. These results should be useful in predicting which systems undergo quantized electronic growth on layered semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ab initio methods for polariton chemistry

Polariton chemistry exploits the strong interaction between quantized excitations in molecules and quantized photon states in optical cavities to affect chemical reactivity. Molecular polaritons have been experimentally realized by the coupling of electronic, vibrational, and rovibrational transitions to photon modes, which has spurred a tremendous theoretical effort to model and explain how polariton formation can influence chemistry. This tutorial review focuses on computational approaches for the electronic strong coupling problem through the combination of familiar techniques from ab initio electronic structure theory and cavity quantum electrodynamics, toward the goal of supplying predictive theories for polariton chemistry. Our aim is to emphasize the relevant theoretical details with enough clarity for newcomers to the field to follow, and to present simple and practical code examples to catalyze further development work.

Chemistry↗

Strain effects on the electronic properties in δ -doped oxide superlattices

We investigated strain effects on the electronic properties of (LaTiO 3 ) 1 /(SrTiO 3 )N superlattices using density functional theory. Under biaxial in-plane strain within the range of -5% ≤ ε// ≤ 5%, the d xy orbital electrons are highly localized at the interfaces whereas the d yz and d xz orbital electrons are more distributed in the SrTiO 3 (STO) spacer layers. For STO thickness N ≥ 3 unit cells (u.c.), the d xy orbital electrons form two-dimensional (2D) electron gases (2DEGs). The quantized energy levels of the 2DEG are insensitive to the STO spacer thickness, but are strongly dependent on the applied biaxial in-plane strain. As the in-plane strain changes from compressive to tensile, the quantized energy levels of the dxy orbitals decrease thereby creating more states with 2D character. In contrast to the d xy orbital, the d yz and dxz orbitals always have three-dimensional (3D) transport characteristics and their energy levels increase as the strain changes from compressive to tensile. In conclusion, since the charge densities in the d xy orbital and the d yz and d xz orbitals respond to biaxial in-plane strain in an opposite way, the transport dimensionality of the majority carriers can be controlled between 2D and 3D by applying biaxial in-plane strain.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗