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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Monolithic AlScN/SiC phononic waveguides for scalable acoustoelectric and quantum devices

Unlike conventional surface acoustic wave devices, phononic waveguide systems enable higher circuit density and stronger strain and piezoelectric fields, making them promising for advanced acoustoelectric and quantum applications. One such material system for generating and guiding phonons at gigahertz frequencies is AlScN on SiC, which can be synthesized by sputter depositing AlScN directly onto SiC wafers. The AlScN on the SiC platform allows for tightly vertically-confined acoustic modes with high electromechanical coupling, high speed of sound, and simple fabrication of strip and rib waveguides. Until now, this system has only been studied as a slab waveguide platform, i.e., without any lateral waveguiding. Here, we demonstrate a two-dimensionally confined phononic architecture in AlScN on SiC that supports guided modes at 2.95 and 4.05 GHz. These modes exhibit strong electromechanical coupling coefficients (k 2 = 4.27%) and propagation losses on the order of 10 dB/mm. Furthermore, this architecture is well-suited for phononic routing and power-efficient active or nonlinear devices such as amplifiers, mixers, and oscillators, and is compatible with the integration of quantum systems, including vacancy centers, charge carriers, photons, and spins, either embedded in SiC or heterogeneously integrated on the surface.

Electrical components↗
DOE OSTI2021

Giant exciton-enhanced shift currents and direct current conduction with subbandgap photo excitations produced by many-electron interactions

Significance Shift current, a bulk photovoltaic effect, arises from nonlinear light–matter interaction in a noncentrosymmetric crystal under continuous wave illumination. Although it is a promising mechanism for photocurrent generation without p–n junctions, the short-circuit current (which is related to the power efficiency of a solar cell device) is usually low. It is therefore important to understand the physics of the phenomenon and find materials with strong shift current conductivity. We calculate the shift current conductivity including excitonic effects in a real material (monolayer GeS) from first principles. We show that electron–hole interactions can dramatically enhance and qualitatively change shift current in reduced-dimensional materials. Our results indicate low-dimensional materials are promising candidates for next-generation photovoltaic devices with high efficiencies.

Chan, Yang-Hao↗
DOE OSTI2013

Substituent effects on the geometric and electronic properties of tetracyano-p-quinodimethane (TCNQ): A theoretical study.

Electron acceptors are classes of molecules that are important in organic devices as they help to improve the conductivity of organic semiconducting molecules by forming p-type complexes or anion radical complexes. These molecules can be doped into hole transporting materials to provide good ohmic contact with the anode and to improve the carrier density of the hole transport layer. This results in organic light emitting devices (OLEDs) with low driving voltages and high power efficiencies. In this study we investigate a series of TCNQ derivatives with substituents expected to facilitate the electron acceptor capabilities of the quinones using density functional theory (DFT) and time-dependent density functional theory (TDDFT). As expected, the cyano substitution stabilizes both HOMO and LUMO energy levels, and increases the adiabatic electron affinity of the dopants. The stabilization effect on the LUMO levels is greater and as a result the narrowing of the HOMO-LUMO gap is seen. This fact was further confirmed by TD-DFT studies, energy of the computed S1 ← S0 transition red shifted upon CN substitution. However, perturbation to the ground state geometry is negligible and all anionic structures exhibits aromatization independent of substitution. Our study suggests that the substituted derivatives reported herein show promise as conductivity dopants

Environmental Molecular Sciences Laboratory↗
DOE OSTI2024

Frequency-domain computing using nonlinear acoustic-wave device on lithium niobate

Abstract Multiply-accumulation are crucial computing operations in signal processing, numerical simulations, and machine learning. In recent years, optical analog approaches have demonstrated higher computing performance and better power efficiency than their digital counterparts. However, analog computing chips usually need large areas and complex structures for parallel computing, as a single device element only executes one computing operation at a single time. Here, we demonstrate frequency-domain computing using the nonlinear acoustic-wave devices on lithium niobate, featuring a normalized external second-harmonic generation conversion efficiency of ~ 5.7 × 10-4 W-1. The second-order sum-frequency nonlinear process of lithium niobate enables multiplication of inputs encoded in the frequency domain. Compared to the analog schemes, our device features a notably simpler design, and nanofabrication requires only one lift-off. Using a single acoustic-wave device within an area of 0.03 mm2, we can simultaneously conduct over 130,000 multiply-accumulation operations. Our acoustic-wave device shows applications in real and complex vector convolutions and image processing. This demonstration sets the stage for experimental realizations into frequency-domain integrated nonlinear acoustic computing systems, potentially shaping future developments in acoustic neural networks and quantum computing.

chai, mingzhao (ORCID:0009000466226341)↗
DOE OSTI2024

Optimization of lithium vapor box divertor evaporator location on NSTX-U using SOLPS-ITER

Commercial fusion reactors will be faced with extremely high divertor target heat fluxes that will require mitigation. Simulations of detachment in an NSTX-U scenario projected to have 92 MW/m 2 unmitigated peak target heat flux are presented, which reaches sub-10 MW/m 2 target heat flux using a highly dissipating lithium vapor box divertor design. The lithium vapor box is a detached divertor design which employs lithium vapor evaporation and condensation to contain lithium below the X-point. Previous SOLPS modeling has indicated a lithium vapor box can reduce the heat flux down to 10 MW/m 2 via simultaneous evaporation from the Private Flux Region (PFR) and the Common Flux Region (CFR) sides of the vapor box. It is found here that PFR evaporation has improved access to the separatrix leading to significantly more efficient power dissipation than CFR evaporation. Simulations of target evaporation with an evaporation distribution that is self-consistent with the temperature of a Capillary Porous System with Fast flowing liquid lithium (CPSF) could reach n Li / n e ~ 0.025-0.030 at the Last Closed Flux Surface (LCFS) depending on the liquid metal flow speeds and lithium sputtering yield, while PFR-side evaporation can reach acceptable heat fluxes with n Li / n e ~ 0.038 at the LCFS. However, PFR evaporator performance can be improved if the target is allowed to be hot enough such that it reflects lithium, reaching n Li / n e ~ 0.028 and reducing required lithium evaporation. Ultimately PFR evaporation and target evaporation are found to have similar ability to produce acceptable heat flux solutions with minimal upstream concentration.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2026

Beam-beam backgrounds for the Cool Copper Collider

In this paper, we present a comprehensive characterization of beam-beam backgrounds for the Cool Copper Collider (C 3 ), a proposed linear e + e - collider designed for precision Higgs studies at center-of-mass energies of 250 and 550 GeV. Using a simulation pipeline based on the Key4hep framework, we evaluate incoherent pair production and hadron photoproduction backgrounds through the SiD detector for baseline, power-efficiency, and high-luminosity C 3 operating scenarios. The occupancy induced by the beam-beam background is evaluated for each scenario, validating the compatibility of the existing SiD detector design with operations at C 3 without substantial modifications. Furthermore, at the same time, the modular simulation framework and analysis methodology presented in this paper offer a versatile toolkit for background studies in future collider proposals, contributing to a common platform for different machine designs.

Analysis and statistical methods↗
DOE OSTI2026

Sub-Doppler Cooling of a Trapped Ion in a Phase-Stable Polarization Gradient

Trapped ions provide a highly controlled platform for quantum sensors, clocks, simulators, and computers, all of which depend on cooling ions close to their motional ground state. Existing methods like Doppler, resolved sideband, and dark resonance cooling balance trade-offs between the final temperature and cooling rate. A traveling polarization gradient has been shown to cool multiple modes quickly and in parallel, but utilizing a stable polarization gradient can achieve lower ion energies, while also allowing tailorable light-matter interactions in the sub-wavelength regime. In this Letter, we demonstrate cooling of a trapped ion below the Doppler limit using a phase-stable polarization gradient created using trap-integrated photonic devices. At an axial frequency of 2⁢𝜋×1.45 MHz we achieve ⟨𝑛⟩=1.56±0.07 in 150 μ⁢s and cooling rates of ∼0.3 quanta/μ⁢s. Here, we examine ion dynamics under different polarization gradient phases, detunings, and intensities, showing reasonable agreement between experimental results and a multilevel model. Cooling is fast and power efficient, with lower average motional Fock state occupation when compared to simulated operation under the corresponding running wave configuration. Our results demonstrate a well-controlled test bed for studying the dynamics of multilevel atomic systems in a phase-stable polarization gradient.

Atom & ion cooling↗
DOE OSTI2022

Exponential Escape Rate of Filamentary Incubation in Mott Spiking Neurons

Mott materials such as vanadium oxides, when subject to a strong applied voltage, present an inhomogeneous insulator-to-metal transition with formation of metallic filaments within the insulating bulk. This property is enabling the development of compact and power-efficient neuromorphic devices known as Mott neurons. However, the nature of the transition has not been fully understood yet, as it may be attributed to different effects, including Joule self-heating and hot-carrier injection. Moreover, the experimental determination of the threshold voltage needed to induce the transition has proven to be challenging, as the transition becomes increasingly unpredictable when the threshold is approached. The physical understanding of these issues would not only deepen our understanding of Mott insulators, but would also be an important step toward the realization of neuromorphic devices based on such materials. In this work we use numerical simulations based on the Mott resistor network model to study the nature of the filament incubation and formation process. Here, we show that both electronic and thermal effects, in the form of current density focusing and Joule self-heating, respectively, contribute to the filamentary incubation and growth. Remarkably, we find that the percolation of the metallic filaments near the threshold is intrinsically stochastic, qualitatively similar to the familiar Arrhenius activated behavior and to the stochastic firing of biological neurons. More precisely, we characterize the filament percolation as a Poisson point process, which has the same probability distribution as mathematical models of neuronal firing with an exponential escape rate. Finally, we support the numerical simulation results by performing experiments in VO 2 that are in agreement with the exponential escape rate behavior. Thus, we establish a functionality of Mott insulators that opens a path toward implementing neuromorphic hardware with quantum materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Charge-spin interconversion in epitaxial Pt probed by spin-orbit torques in a magnetic insulator

We measure spin-orbit torques (SOTs) in a model system of all-epitaxial ferrite/Pt bilayers to gain insights into charge-spin interconversion in Pt. With negligible electronic conduction in the insulating ferrite, the crystalline Pt film acts as the sole source of charge-to-spin conversion. A small fieldlike SOT independent of Pt thickness suggests a weak Rashba-Edelstein effect at the ferrite/Pt interface. By contrast, we observe a sizable dampinglike SOT that depends on the Pt thickness, from which we deduce the dominance of an extrinsic spin-Hall effect (skew scattering) and Dyakonov-Perel spin relaxation in the crystalline Pt film. Furthermore, our results point to a large internal spin-Hall ratio of ≈ 0.8 in epitaxial Pt. Furthermore, our experimental work takes an essential step towards understanding the mechanisms of charge-spin interconversion and SOTs in Pt-based heterostructures, which are crucial for power-efficient spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Antiferromagnetic Fe Te 2 1 T - phase formation at the Sb 2 Te 3 / Ni 80 Fe 20 interface

Bilayer topological insulator/ferromagnet (TI/FM) heterostructures are promising for spintronic applications due to their low switching energy and therefore power efficiency. Until recently, the reactivity of TI with FM films was overlooked in the spin orbit-torque literature, even though there are reports that it is energetically favorable for TIs to react with transition metals and form interfacial layers. Here, in this study we fabricated a TI/FM heterostructure comprised of molecular beam epitaxy grown Sb 2 Te 3 and DC sputtered Ni 80 Fe 20 . Broadband ferromagnetic resonance revealed spin-pumping evident by the significant enhancement in Gilbert damping, which is likely a signature of the topological surface states or the presence of large spin-orbit-coupling in the adjacent Sb 2 Te 3 . With low-temperature magnetometry, an exchange bias is observed which indicates an exchange interaction between an antiferromagnet (AFM) and an adjacent FM. Cross-section high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM) characterization of the Sb 2 Te 3 - Ni 80 Fe 20 bilayer revealed a complex interface showing diffusion of Fe and Ni into the Sb 2 Te 3 film yielding the formation of a FeTe 2 1T-type structural phase. Furthermore, density functional theory calculations revealed that the FeTe 2 1T-phase has an AFM ground state. Due to experimental limitations in the electron energy loss spectroscopy measurements precise chemistry of the interfacial phase could not be determined, therefore it is possible that the FeTe 2 1T and/or an intermixed (Fe 1-x Ni x )Te 2 1T is the AFM interfacial phase contributing to exchange bias in the system. This work emphasizes the chemical complexity of TI/FM interfaces that host novel, metastable magnetic topological phases and require more in-depth studies of other similar interfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

ROSE::FTTransform - A Source-to-Source Translation Framework for Exascale Fault-Tolerance Research

Exascale computing systems will require sufficient resilience to tolerate numerous types of hardware faults while still assuring correct program execution. Such extreme-scale machines are expected to be dominated by processors driven at lower voltages (near the minimum 0.5 volts for current transistors). At these voltage levels, the rate of transient errors increases dramatically due to the sensitivity to transient and geographically localized voltage drops on parts of the processor chip. To achieve power efficiency, these processors are likely to be streamlined and minimal, and thus they cannot be expected to handle transient errors entirely in hardware. Here we present an open, compiler-based framework to automate the armoring of High Performance Computing (HPC) software to protect it from these types of transient processor errors. We develop an open infrastructure to support research work in this area, and we define tools that, in the future, may provide more complete automated and/or semi-automated solutions to support software resiliency on future exascale architectures. Results demonstrate that our approach is feasible, pragmatic in how it can be separated from the software development process, and reasonably efficient (0% to 30% overhead for the Jacobi iteration on common hardware; and 20%, 40%, 26%, and 2% overhead for a randomly selected subset of benchmarks from the Livermore Loops [1]).

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2021

Comparison of Candidate Designs and Performance Optimization for an Electric Traction Motor Targeting 50 kW/L Power Density

The continued expansion of the global electric vehicle fleet is accompanied by an unprecedented demand for high power density electric traction motors. With the ambitious U.S. DRIVE 2025 target of 50 kW/L power density and an equally aggressive cost reduction goal, innovative approaches have to be utilized in terms of both the design and manufacturing of electric traction motors. In this paper, six motor options are compared and the best design is picked for each option to investigate the drive and excitation requirements and the weighted power efficiency over multiple load points, with necessary mechanical stress and demagnetization checks. State-of-the-art winding technologies, including high slot fill die compressed windings and hairpin windings, and rotors both with permanent magnet (PM) and PM-free are incorporated. The design of high flux density and low harmonic content magnetic field is also demonstrated.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2012

NVMalloc: Exposing an Aggregate SSD Store as a Memory Partition in Extreme-Scale Machines

DRAM is a precious resource in extreme-scale machines and is increasingly becoming scarce, mainly due to the growing number of cores per node. On future multi-petaflop and exaflop machines, the memory pressure is likely to be so severe that we need to rethink our memory usage models. Fortunately, the advent of non-volatile memory (NVM) offers a unique opportunity in this space. Current NVM offerings possess several desirable properties, such as low cost and power efficiency, but suffer from high latency and lifetime issues. We need rich techniques to be able to use them alongside DRAM. In this paper, we propose a novel approach for exploiting NVM as a secondary memory partition so that applications can explicitly allocate and manipulate memory regions therein. More specifically, we propose an NVMalloc library with a suite of services that enables applications to access a distributed NVM storage system. We have devised ways within NVMalloc so that the storage system, built from compute node-local NVM devices, can be accessed in a byte-addressable fashion using the memory mapped I/O interface. Our approach has the potential to re-energize out-of-core computations on large-scale machines by having applications allocate certain variables through NVMalloc, thereby increasing the overall memory capacity available. Our evaluation on a 128-core cluster shows that NVMalloc enables applications to compute problem sizes larger than the physical memory in a cost-effective manner. It can bring more performance/efficiency gain with increased computation time between NVM memory accesses or increased data access locality. In addition, our results suggest that while NVMalloc enables transparent access to NVM-resident variables, the explicit control it provides is crucial to optimize application performance.

Computer Science↗
DOE OSTI2020

A Dynamically-Reconfigurable Burst-Mode Link Using a Nanosecond Photonic Switch

Fast optical circuit switching has great potential to solve scaling issues with traditional packet-switch based networks and improve bandwidth and power efficiency in datacenter and high-performance computing applications. One difficultly in utilizing a fast optical switch is that the optical signal must be rapidly reacquired after each switching event so as to not significantly impact the overall throughput of the system. In this work we present a system-level integration of a nanosecond-scale $2 \times 2$ silicon photonic switch with a 25-Gbps burst-mode receiver that can lock in 31 ns. A novel FPGA-based control plane was used to generate test data, control the silicon photonic switch and burst-mode receiver, and measure bit errors at 12.5 and 20 Gbps. Error-free links (BER $< 10^{-12}$ ) with system-level reconfiguration times below 60 ns (at 20 Gbps) and 90 ns (at 12.5 Gbps) including bit- and frame-synchronization are demonstrated.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2017

Narrow-Bandgap Interband Cascade Thermophotovoltaic Cells

In this paper, we report on the characterization of narrow-bandgap (E g ≈ 0.4 eV, at 300 K) interband cascade thermophotovoltaic (TPV) devices with InAs/GaSb/AlSb type-II superlattice absorbers. Two device structures with different numbers of stages (two and three) were designed and grown to study the influence of the number of stages and absorber thicknesses on the device performance at high temperatures (300-340 K). Maximum power efficiencies of 9.6% and 6.5% with open-circuit voltages of 800 and 530 mV were achieved in the three- and two-stage devices at 300 K, respectively. These results validate the benefits of a multiple-stage architecture with thin individual absorbers for efficient conversion of infrared radiation into electricity from low-temperature heat sources. Additionally, we developed an effective characterization method, based on an adapted version of Suns-V oc technique, to extract the device series and shunt resistance in these TPV cells.

14 SOLAR ENERGY↗
DOE OSTI2014

Redox Flow Batteries: An Engineering Perspective

Redox flow batteries are well suited to provide modular and scalable energy storage systems for a wide range of energy storage applications. In this paper, we review the development of redox flow battery technology including recent advances in new redox active materials and systems. We discuss cost, performance, and reliability metrics that are critical for deployment of large flow battery systems. The technology, while relatively young, has the potential for significant improvement through reduced materials costs, improved energy and power efficiency, and significant reduction in the overall system cost.

Batteries↗
DOE OSTI2024

Enhancing Short-Term Flexibility through Characterization of HVDC Transmission Systems

Efficient power grid operation hinges on maintaining safety and reliability through adaptable system flexibility standards. However, in a future power grid characterized by extensive renewable energy integration, conventional system flexibility and predetermined requirements may falter under extreme conditions. This paper addresses the formidable challenge of sustaining secure and dependable power grid operations under these circumstances, emphasizing the role of controllable high voltage direct current (HVdc) transmission systems in amplifying overall system flexibility and tackling operational complexities. To quantitatively assess short-term flexibility and its associated economic benefits from HVdc within specific regions, we propose a Power Flow Distribution Factors (PTDFs) based approach. This methodology takes into account both dispatchable generators and HVdc systems, pinpointing their contributions. Through an analysis of the Western Electricity Coordinating Council (WECC) system, we demonstrate the practical application of this approach to scrutinize the impacts of existing and future HVdc lines.

Operational Flexibility, Multi-terminal HVdc, tran↗
DOE OSTI2023

A Hybrid Transmitter With Voltage-Mode SST Preemphasis and Current-Mode Transmitter Equalization Capable of Operating at 77 K in DUNE

The Deep Underground Neutrino Experiment (DUNE) requires that the front-end transmitters operate at cryogenic temperature and drive 25–35 m long twin-axial (twinax) cables. Here, to compensate the frequency-dependent channel loss over the long cables and alleviate the de-emphasizing of the low-frequency signal magnitude, a hybrid of a current-mode (CM) transmitter equalization (TXEQ) and a voltage-mode (VM) preemphasis is proposed. The TXEQ employs a finite-impulse response (FIR) filter to boost the high-frequency components while de-emphasizing the low-frequency signal magnitude, thereby flattening the overall channel frequency response and reducing the intersymbol interference (ISI). The VM preemphasis is proposed to further mitigate ISI by boosting the high-frequency portion without degrading the signal magnitude, allowing for high signal swing. The main driver utilizes VM source-series-terminated (SST) output stages, which offers higher signal swing and better power efficiency than the conventional CM logic (CML) drivers. To ensure the lifetime and reliability at cryogenic temperature, the transmitter is implemented in a 65-nm CMOS process operating at 1.1 V of supply voltage and employing transistors with larger than minimum lengths. Silicon measurement results at 77 K have validated the proposed approaches.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗