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At least 685 records · Page 38

Effective Field Theory Analysis of CDMSlite Run 2 Data

CDMSlite Run 2 was a search for weakly interacting massive particles (WIMPs) with a cryogenic 600 g Ge detector operated in a high-voltage mode to optimize sensitivity to WIMPs of relatively low mass from 2 - 20 GeV/$c^2$. In this article, we present an effective field theory (EFT) analysis of the CDMSlite Run 2 data using an extended energy range and a comprehensive treatment of the expected background. A binned likelihood Bayesian analysis was performed on the recoil energy data, taking into account the parameters of the EFT interactions and optimizing the data selection with respect to the dominant background components. Energy regions within 5$\sigma$ of known activation peaks were removed from the analysis. The Bayesian evidences resulting from the different operator hypotheses show that the CDMSlite Run 2 data are consistent with the background-only models and do not allow for a signal interpretation assuming any additional EFT interaction. Consequently, upper limits on the WIMP mass and coupling-coefficient amplitudes and phases are presented for each EFT operator. These limits improve previous CDMSlite Run 2 bounds for WIMP masses above 5 GeV/$c^2$.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Wide bandgap optical switch circuit breaker

A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

Voss, Lars F.↗

Data Acquisition System Selection and Calibration of Resistive Moisture Content Measurements for Large-Scale Field Studies in Cold Climate Residential Building Envelope Performance

The residential building stock built before the energy codes were enforced has several significant inefficiency problems in terms of insulation and air leakage. To decrease these inefficiencies, building retrofits are necessary. However, if the envelope is not appropriately designed, excessive accumulation of moisture content and thus mold formation and decay inside the envelope layers can be a vital problem. This risk becomes higher, especially in extreme climate conditions such as cold winters and hot and humid summers as in some northern regions of the U.S. Field studies are essential to test the long-term hygrothermal performance of building envelopes. Although in-situ temperature, RH, and heat flux measurements are straightforward, moisture content measurements are cumbersome. Mainly, because of the heterogeneous nature of the wood materials, deviations and nonuniformities within the materials are unavoidable. Resistance measurements are one of the oldest methods used to measure the moisture content of wood and other building materials. In large-scale studies, it is commonly preferred to use multi-purpose data acquisition systems (DAQ) and custom-made or prefabricated moisture pins to measure the electrical resistance (and thus moisture content) of critical building materials. These multi-purpose DAQ systems generally provide lower costs and offer more flexibility. However, these systems require calibration and fine-tuning to achieve accurate moisture content measurements. A large-scale, two-year-long field study was conducted in northern Minnesota to monitor the hygrothermal performance of residential retrofit wall systems in cold climates. Two base case walls and sixteen different wall treatments were tested. Moisture contents were measured at various layers in each wall treatment using 85 sets of moisture pins. This paper focuses on the overall approach, fabrication, and calibration methodology for the combination of custom-made moisture pins and a multi-purpose DAQ. The aim is to directly use the low-excitation multi-purpose DAQ without any extra voltage regulator. A half-bridge circuit is used to measure wood resistance with 4V excitation voltage and 100 kΩ and 500 kΩ reference resistors. The system is calibrated for four different materials: Douglas fir, lodgepole pine, western red cedar, and oriented strand board (OSB). Calibration experiments were done under controlled conditions in 50% and 65% RH test chambers. Resistance-based moisture content calibration curves are obtained for each species. Results show that higher reference resistors provided better calibration curves for lower excitation voltages.

Desjarlais, Andre Omer↗

Wide bandgap optical switch circuit breaker for controlling propagation of current therethrough a wide bandgap optical device

A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

Voss, Lars F.↗

Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.

4-Quadrant switch↗

Unidirectional Sidechain Engineering to Construct Dual‐Asymmetric Acceptors for 19.23 % Efficiency Organic Solar Cells with Low Energy Loss and Efficient Charge Transfer

Abstract Achieving both high open‐circuit voltage ( V oc ) and short‐circuit current density ( J sc ) to boost power‐conversion efficiency (PCE) is a major challenge for organic solar cells (OSCs), wherein high energy loss ( E loss ) and inefficient charge transfer usually take place. Here, three new Y‐series acceptors of mono‐asymmetric asy‐YC11 and dual‐asymmetric bi‐asy‐YC9 and bi‐asy‐YC12 are developed. They share the same asymmetric D 1 AD 2 (D 1 =thieno[3,2‐ b ]thiophene and D 2 =selenopheno[3,2‐ b ]thiophene) fused‐core but have different unidirectional sidechain on D 1 side, allowing fine‐tuned molecular properties, such as intermolecular interaction, packing pattern, and crystallinity. Among the binary blends, the PM6 : bi‐asy‐YC12 one has better morphology with appropriate phase separation and higher order packing than the PM6 : asy‐YC9 and PM6 : bi‐asy‐YC11 ones. Therefore, the PM6 : bi‐asy‐YC12‐based OSCs offer a higher PCE of 17.16 % with both high V oc and J sc , due to the reduced E loss and efficient charge transfer properties. Inspired by the high V oc and strong NIR‐absorption, bi‐asy‐YC12 is introduced into efficient binary PM6 : L8‐BO to construct ternary OSCs. Thanks to the broadened absorption, optimized morphology, and furtherly minimized E loss , the PM6 : L8‐BO : bi‐asy‐YC12‐based OSCs achieve a champion PCE of 19.23 %, which is one of the highest efficiencies among these annealing‐free devices. Our developed unidirectional sidechain engineering for constructing bi‐asymmetric Y‐series acceptors provides an approach to boost PCE of OSCs.

Chemistry↗

All-temperature zinc batteries with high-entropy aqueous electrolyte

Electrification of transportation and rising demand for grid energy storage continue to build momentum around batteries across the globe. However, the supply chain of Li-ion batteries is exposed to the increasing challenges of resourcing essential and scarce materials. Therefore, incentives to develop more sustainable battery chemistries are growing. Here, in this paper, we show an aqueous ZnCl 2 electrolyte with introduced LiCl as supporting salt. Once the electrolyte is optimized to Li 2 ZnCl 4 ∙9H 2 O, the assembled Zn–air battery can sustain stable cycling over the course of 800 hours at a current density of 0.4 mA cm -2 between -60 °C and +80 °C, with 100% Coulombic efficiency for Zn stripping/plating. Even at -60 °C, >80% of room-temperature power density can be retained. Advanced characterization and theoretical calculations reveal a high-entropy solvation structure that is responsible for the excellent performance. The strong acidity allows ZnCl 2 to accept donated Cl - ions to form ZnCl 4 2- anions, while water molecules remain within the free solvent network at low salt concentration or coordinate with Li ions. Our work suggests an effective strategy for the rational design of electrolytes that could enable next-generation Zn batteries.

25 ENERGY STORAGE↗

Precursor Reaction Method With High Ga Cu(In,Ga)(S,Se)$_{2}$ to Achieve Increased Open-Circuit Voltage

The precursor reaction process for the fabrication of Cu(In,Ga)Se 2 solar cells potentially allows for low-cost fabrication and scalable processing for manufacturing. Additionally, this process has yielded record efficiencies in lab-scale experiments. Thus far, research on the precursor reaction method has been restricted to relatively low Ga compositions with Ga/(In+Ga) ≈ 25%. By increasing the ratio of Ga, it is possible to increase the bandgap, and thus, increase the open-circuit voltage. This work develops and characterizes the precursor reaction process for use with Ga/(In+Ga) ≈ 50%, with the goal of improving the open-circuit voltage and efficiency. It is shown that with an increased Ga ratio, increased V ∞ is achieved, but the rate of conversion from the precursor to absorber phases is decreased. Additionally, increased Ga improves the film adhesion at increased selenization temperatures as well as improving the film morphology.

14 SOLAR ENERGY↗

Improved cycle stability and high-rate capability of LiNbO 3 -coated Li 3 VO 4 as anode material for lithium-ion battery

Lithium vanadate (Li 3 VO 4 ) has garnered considerable attention as an alternative negative electrode material for non-aqueous lithium-ion batteries due to its high capacity, energy efficiency, and stable discharge voltage. Nonetheless, the Li 3 VO 4 material displays a low rate capability, attributed mainly to its poor intrinsic electronic conductivity. Here, in this study, we report the synthesis of lithium niobate LiNbO 3 -coated Li 3 VO 4 (LVO@LNO) using a one-pot sol-gel method. The resulting LVO@LNO demonstrates a high reversible capacity of approximately 530 mAh/g, which is more than double that of free Li 3 VO 4 . To explore the effect of the LNO coating process on the morphological and structural properties, Raman, XRD, operando XRD, XPS, SEM and HTEM analyses were conducted. To explain the enhancement of electronic conductivity in our modified material after a LiNbO 3 coating, we conducted an Ex-Situ electrochemical impedance (EIS) and Density Functional Theory (DFT) computational study. Additionally, we designed a full cell utilizing a 1 wt% LNO-coated LVO anode and NMC-811 cathode. The cell yielded an output voltage of approximately 2.8 V with a high initial specific capacity of 350 mAh/g versus to the anode, at 1C with a capacity retention of 85 % after 100 cycles.

25 ENERGY STORAGE↗

Switching Modes for Reduction of Peak Voltage Transients in GaN-Based Three Level ANPC Inverter

The switching pole voltage can transition between P,0, and N states in a three-level active neutral point clamped (ANPC) inverter. State transitions between 0-P and 0-N can be realized with different switching modes. Three switching modes- Short 1 , Short 2 , and Full are studied considering the effect of capacitive current paths. The role of clamping and inner switch on/off conditions is determined using simplified equivalent circuit models. Short 2 with clamping switch off is beneficial for turn-on overvoltage suppression but results in high turn-off overvoltage. Full mode with a parallel current sharing path is effective for turn-off overvoltage suppression but leads to high turn-on overvoltage. Hence, a Modified Full mode is proposed to achieve the simultaneous objective of overvoltage suppression at both turn-on and turn-off transient during high load currents. This benefits 3L ANPC operation at a low power factor with a high load current at fundamental voltage zero crossing points. Here, a 650V GaN-based three-level ANPC inverter prototype is designed and used to evaluate the switching modes and overvoltage suppression strategies through double pulse tests and continuous operation.

42 ENGINEERING↗

A model for excess Johnson noise in superconducting transition-edge sensors

Transition-edge sensors (TESs) are two-dimensional superconducting films utilized as highly sensitive detectors of energy or power. These detectors are voltage biased in the superconducting-normal transition where the film resistance is both finite and a strong function of temperature. Unfortunately, the amount of electrical noise observed in TESs exceeds the predictions of existing noise theories. We describe a possible mechanism for the unexplained excess noise, which we term “mixed-down noise.” The source is Johnson noise, which is mixed down to low frequencies by Josephson oscillations in devices with a nonlinear current–voltage relationship. We derive an expression for the power spectral density of this noise and show that its predictions agree with measured data.

Wessels, Abigail (ORCID:0000000173918339)↗

Accessing a high‐voltage nonaqueous hybrid flow battery with a sodium‐methylphenothiazine chemistry and a sodium‐ion solid electrolyte

Abstract The development of redox flow batteries (RFBs) with nonaqueous electrolytes offers the possibility of accessing a high cell‐operation voltage (no restrain of hydrogen evolution and oxygen evolution potentials) and a low operation temperature (can be operated below the freezing point of water). Therefore, nonaqueous RFBs have recently garnered increasing attention. However, the cross‐mixing of liquid electrode/electrolyte materials has been plaguing the progress of the nonaqueous RFBs. Herein, we present a crossover‐free, high voltage nonaqueous hybrid flow battery (HFB) with a novel sodium‐methylphenothiazine (MPT) chemistry and a single‐ion solid‐electrolyte separator. The Na‐MPT redox couple delivers a high voltage of ~2.6 V when the cell was operated at a medium current density. A NASICON‐type solid electrolyte membrane (Na 3 Zr 2 Si 2 PO 12 ) could circumvent the crossover of the liquids between the positive and negative electrodes, and meanwhile could maintain a single‐ion (Na + ‐ion) conduction between the two electrodes to sustain the electrochemical reactions. Under such an electrochemical mechanism, the nonaqueous Na‐MPT HFB shows remarkable cycling performance.

Yu, Xingwen↗

Multi-Fidelity Gaussian Process for Distribution System Voltage Probabilistic Estimation with PVs

The increasing penetration of behind-the-meter PVs causes challenges to maintain voltage security due to the lack of distribution system visibility. This paper proposes a nonlinear autoregressive Gaussian process (NARGP) approach to fuse limited number of SCADA/AMI data together with historical pseudo measurements for distribution node voltage probabilistic estimation. The high-fidelity SCADA data are fused with the low-fidelity AMI and pseudo measurements by the autoregressive algorithm embedded in the Gaussian process. This allows us to use multi-fidelity data to achieve entire distribution system voltage visibility. Numerical results carried out on the IEEE 123node system demonstrate that the NARGP method is able to obtain high accuracy in estimating bus voltage and quantifying estimation uncertainties as compared to other approaches.

distribution system estimation↗

Reports from the Frontier: Understanding Voltage Losses in Anion Exchange Membrane Water Electrolyzers

With the growth of renewable energy sources, hydrogen is attracting significant attention worldwide as an effective medium for energy storage. “Green hydrogen” is currently produced primarily by water electrolysis in which water is split into hydrogen and oxygen using power from low-carbon energy sources such as wind, solar, and nuclear. Among the low temperature water electrolysis technologies, anion exchange membrane water electrolyzers (AEMWEs) have recently emerged as a promising competitor to traditional alkaline water electrolyzers (AWEs) and proton exchange membrane electrolyzers (PEMELs) due to their potential stack cost reduction in various cell components. In conclusion, favorable aspects of AEMWEs include the use of PGM-free electrocatalysts as well as low-cost membranes, bipolar plates (BPs), and porous transport layers while offering high voltage efficiency and durability.

08 HYDROGEN↗

An X-Band Ultra-High Gradient Photoinjector

High brightness beams appealing for XFELs and UEM essentially imply a high current and a low emittance. To obtain such beams we propose to raise the accelerating voltage in the gun mitigating repealing Coulomb forces. An ultra-high gradient is achieved utilizing a short-pulse technology. We have designed a room temperature X-band 1,5 cell gun that is able to inject 4 MeV, 100 pC bunches with as low as 0.15 mcm normalized transverse emittance. The gun is operated with as high gradients as 400 MV/m and fed by 200 MW, 10 ns RF pulses generated with Argonne Wakefield Accelerator (AWA) power extractor. We report results of low RF power tests, laser alignment test results, and successful gun conditioning results carried out at nominal RF power.

43 PARTICLE ACCELERATORS↗

Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

Polarization-induced (Pi) distributed or bulk doping in GaN, with a zero dopant ionization energy, can reduce temperature or frequency dispersions in impurity-doped p–n junctions caused by the deep-acceptor-nature of Mg, thus offering GaN power devices promising prospects. Before comprehensively assessing the benefits of Pi-doping, ideal junction behaviors and high-voltage capabilities should be confirmed. In this work, we demonstrate near-ideal forward and reverse I–V characteristics in Pi-doped GaN power p–n diodes, which incorporates linearly graded, coherently strained AlGaN layers. Hall measurements show a net increase in the hole concentration of 8.9 × 1016 cm−3 in the p-layer as a result of the polarization charge. In the Pi-doped n-layer, a record-low electron concentration of 2.5 × 1016 cm−3 is realized due to the gradual grading of Al0-0.72GaN over 1 μm. The Pi-doped p–n diodes have an ideality factor as low as 1.1 and a 0.10 V higher turn-on voltage than the impurity-doped p–n diodes due to the increase in the bandgap at the junction edge. A differential specific on-resistance of 0.1 mΩ cm2 is extracted from the Pi-doped p–n diodes, similar with the impurity-doped counterpart. The Pi-doped diodes show an avalanche breakdown voltage of ∼1.25 kV, indicating a high reverse blocking capability even without an ideal edge-termination. This work confirms that distributed Pi-doping can be incorporated in high-voltage GaN power devices to increase hole concentrations while maintaining excellent junction properties.

Nomoto, Kazuki↗

A Model-Free Voltage Control Approach to Mitigate Motor Stalling and FIDVR for Smart Grids

Electric power networks are large and highly nonlinear dynamical systems that present unique challenges to control design. Though there is a large number of dynamic models for power system stability and control, many models are only useful with right assumptions and wrong for other tasks. Moreover, the dynamic behavior of the grid is increasingly complex under the banner of smart grids. These lead to the difficulty of developing appropriate dynamic modeling, and thus an efficient control strategy. To avoid such modeling challenges, here we present a novel dynamic voltage control strategy based on a model-free control (MFC) approach, requiring no modeling procedure. In particular, it focuses on fault-induced delayed voltage recovery (FIDVR) events, which require complex and accurate dynamic load models to replicate such events. This work utilizes MFC as an online controller to achieve the desired voltage stability under the FIDVR event. The proposed MFC strategy allows simple implementation and low computational cost for efficient mitigation of FIDVR. For benchmarking, a reasonably accurate dynamic performance model is explored. Simulation results with the IEEE 57 bus test network demonstrate the enhanced dynamic voltage profile for load buses having induction motors with the support of reactive power resources.

24 POWER TRANSMISSION AND DISTRIBUTION↗

High voltage MOSFET devices and methods of making the devices

A SiC MOSFET device having low specific on resistance is described. The device has N+, P-well and JFET regions extended in one direction (Y-direction) and P+ and source contacts extended in an orthogonal direction (X-direction). The polysilicon gate of the device covers the JFET region and is terminated over the P-well region to minimize electric field at the polysilicon gate edge. In use, current flows vertically from the drain contact at the bottom of the structure into the JFET region and then laterally in the X direction through the accumulation region and through the MOSFET channels into the adjacent N+ region. The current flowing out of the channel then flows along the N+ region in the Y-direction and is collected by the source contacts and the final metal. Methods of making the device are also described.

42 ENGINEERING↗