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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Characterization and interaction of geometric and contact/impact nonlinearities in dynamical systems

Here, we study how a contact/impact nonlinearity interacts with a geometric cubic nonlinearity in an oscillator system. Specific focus is shown to the effects on bifurcation behavior and secondary resonances (i.e., super- and sub-harmonic resonances). The effects of the individual nonlinearities are first explored for comparison, and then the influences of the combined nonlinearities, varying one parameter at a time, are analyzed and discussed. Nonlinear characterization is then performed on an arbitrary system configuration to study super- and sub-harmonic resonances and grazing contacts or bifurcations. Both the cubic and contact nonlinearities cause a drop in amplitude and shift up in frequency for the primary resonance, and they activate high-amplitude subharmonic resonance regions. The nonlinearities seem to never destructively interfere. The contact nonlinearity generally affects the system’s superharmonic resonance behavior more, particularly with regard to the occurrence of grazing contacts and the activation of many bifurcations in the system’s response. The subharmonic resonance behavior is more strongly affected by the cubic nonlinearity and is prone to multistable behavior. Perturbation theory proved useful for determining when the cubic nonlinearity would be dominant compared to the contact nonlinearity. The limiting behaviors of the contact stiffness and freeplay gap size indicate the cubic nonlinearity is dominant overall. It is demonstrated that the presence of contact may result in the activation of several bifurcations. In addition, it is proved that the system’s subharmonic resonance region is prone to multistable dynamical responses having distinct magnitudes.

42 ENGINEERING↗
DOE OSTI2024

Seasonal Controls on Microbial Depolymerization and Oxidation of Organic Matter in Floodplain Soils

Floodplain soils are vast reservoirs of organic carbon often attributed to anaerobic conditions that impose metabolic constraints on organic matter degradation. What remains elusive is how such metabolic constraints respond to dynamic flooding and drainage cycles characteristic of floodplain soils. Here, in this work, we show that microbial depolymerization and respiration of organic compounds, two rate-limiting steps in decomposition, vary spatially and temporally with seasonal flooding of mountainous floodplain soils (Gothic, Colorado, USA). Combining metabolomics and -proteomics, we found a lower abundance of oxidative enzymes during flooding coincided with the accumulation of aromatic, high-molecular weight compounds, particularly in surface soils. In subsurface soils, we found that a lower oxidation state of carbon coincided with a greater abundance of chemically reduced, energetically less favorable low-molecular weight metabolites, irrespective of flooding condition. Our results suggest that seasonal flooding temporarily constrains oxidative depolymerization of larger, potentially plant-derived compounds in surface soils; in contrast, energetic constraints on microbial respiration persist in more reducing subsurface soils regardless of flooding. Our work underscores that the potential vulnerability of these distinct anaerobic carbon storage mechanisms to changing flooding dynamics should be considered, particularly as climate change shifts both the frequency and extent of flooding in floodplains globally.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2021

Ion specific, thin film confinement effects on conductivity in polymerized ionic liquids.

Acrylate-based polymerized ionic liquids (PILs) with ammonium (Am) or imidazolium (Im) cations and tetrafluoroborate (BF4) or bis(trifluoromethanesulfonyl)imide (TFSI) anions were synthesized and spin coated onto gold interdigitated electrodes on silica to investigate nanoconfinement effects on ion transport. The film thickness ranged from 23 to 313 nm. A significant reduction of the in-plane conductivity was observed in some PIL thin films with thickness below 100 nm. Specifically, Am BF4 PIL showed the largest conductivity drop (ca. 50% difference between a 22 nm and a 261 nm film) while Im TFSI PIL showed almost no change under confinement. The difference in conductivity drop is discussed in terms of (i) differences in interfacial layer thickness by fitting a two-layer conductivity model and (ii) potential changes in glass transition temperature (T-g) under confinement, which were estimated using the Vogel-Fulcher-Tammann fits of bulk conductivities. Decreasing film thickness also caused the dielectric loss peaks to shift to lower frequency, indicating that the ion diffusion process slowed under confinement.

Zhao, Qiujie↗
DOE OSTI2022

Reconfigurable quantum phononic circuits via piezo-acoustomechanical interactions

Abstract We show that piezoelectric strain actuation of acoustomechanical interactions can produce large phase velocity changes in an existing quantum phononic platform: aluminum nitride on suspended silicon. Using finite element analysis, we demonstrate a piezo-acoustomechanical phase shifter waveguide capable of producing ± π phase shifts for GHz frequency phonons in 10s of μm with 10s of volts applied. Then, using the phase shifter as a building block, we demonstrate several phononic integrated circuit elements useful for quantum information processing. In particular, we show how to construct programmable multi-mode interferometers for linear phononic processing and a dynamically reconfigurable phononic memory that can switch between an ultra-long-lifetime state and a state strongly coupled to its bus waveguide. From the master equation for the full open quantum system of the reconfigurable phononic memory, we show that it is possible to perform read and write operations with over 90% quantum state transfer fidelity for an exponentially decaying pulse.

Taylor, Jeffrey C. (ORCID:0000000215982436)↗
DOE OSTI2018

Comparison of SiC MOSFET‐based and GaN HEMT‐based high‐efficiency high‐power‐density 7.2 kW EV battery chargers

As two exemplary candidates of wide‐bandgap devices, SiC MOSFETs and GaN HEMTs are regarded as successors of Si devices in medium‐to‐high‐voltage (>1200 V) and low‐voltage (<650 V) domains, respectively, thanks to their excellent switching performance and thermal capability. With the introduction of 650 V SiC MOSFETs and GaN HEMTs, the two technologies are in direct competition in <650 V domains, such as Level 2 battery chargers for electric vehicles (EVs). This study applies 650 V SiC and GaN to two 240 VAC/7.2 kW EV battery chargers, respectively, aiming to provide a head‐to‐head comparison of these two devices in terms of overall efficiency, power density, thermal performance, and cost. The charger essentially is an indirect matrix converter with a dual‐active‐bridge stage handling the power factor correction and power delivery simultaneously. These two chargers utilise the same control strategy, varying the phase‐shift and switching frequency to cover the wide input range (80–260 VAC) and wide output range (200 V–450 VDC). Experimental results indicated that at the same efficiency level, the GaN charger is smaller, more efficient and cheaper, while the SiC charger has a better thermal performance.

Taylor, Allan↗
DOE OSTI2011

A study of Sn addition on bonding arrangement of Se-Te alloys using far infrared transmission spectroscopy

Far infrared transmission spectra of Se{sub 92}Te{sub 8-x}Sn{sub x} (x = 0, 1, 2, 3, 4, 5) glassy alloys are obtained in the spectral range 50-600 cm{sup -1} at room temperature. The results are interpreted in terms of the vibrations of the isolated molecular units in such a way so as to preserve fourfold and twofold coordination for Sn and chalcogen atoms (Se,Te), respectively. With the addition of Sn, Far-IR spectra shift toward high frequency side and some new bands start appearing. Sn atoms appear to substitute for the selenium atoms in the outrigger sites due to large bond formation probability. Theoretical calculations of bond energy, relative probability of bond formation, force constant, and wave number were also made to justify the result.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Ethanol Sensitivity of Cu{sub 1-x}Sn{sub x}O(x = 0.00, 0.03, and 0.05) Nanoflakes

Cu{sub 1-x}Sn{sub x}O(x = 0.00, 0.03, and 0.05) nanoflakes were synthesized by a simple wet chemical method and X-Ray diffraction (XRD) result confirms the monoclinic structure of CuO with no secondary phases due to Sn doping. The scanning electron microscopic images indicate the formation of nanoflakes. The fundamental Raman modes were observed at 273, 318, 610, and 1084 cm{sup -1} for undoped CuO sample and theses modes were slightly shifted towards lower frequency side for Sn-doped samples, which indicates the inclusion of Sn in CuO. In addition, XRD and Raman studies infer the decrease of crystallinity in doped samples, which is reflected in the sensitivity towards ethanol. The ethanol sensitivity (resistivity measurement) increases with ethanol gas concentration and decreases with Sn-doping in CuO nanoflakes.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Synthesis and Characterization of Ba(Zr{sub x}Ti{sub 1-x})O{sub 3} Solid Solutions Using Impedance Spectroscopic Techniques

Technologically important solid solutions of Ba(Zr{sub x}Ti{sub 1-x})O{sub 3} are synthesized using conventional solid state route. Relatively dense and single phase ceramics are confirmed using X-ray diffraction. Homogeneous and micron size grain growth is characterized using SEM. Impedance spectroscopy is used to study the electrical properties of ceramics. Broad and diffuse impedance loss peak is observed above 250 deg. C, which shifts towards higher frequency with increase in temperature. The distribution of relaxation frequency may be associated with the B-site cationic disorder due to the random distribution of (Zr{sup 4+}/Ti{sup +4}) having different ionic radii. Impedance relaxation obeys the Arrhenius relation with activation energy, E{tau} is 0.31 eV and 0.48 eV for BZT compositions with x = 0.10 and 0.15 respectively. Equivalent circuit representation using two RC element coupled in parallel is used to analyse the impedance response.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Optic-microwave mixing velocimeter for superhigh velocity measurement

The phenomenon that a light beam reflected off a moving object experiences a Doppler shift in its frequency underlies practical interferometric techniques for remote velocity measurements, such as velocity interferometer system for any reflector (VISAR), displacement interferometer system for any reflector (DISAR), and photonic Doppler velocimetry (PDV). While VISAR velocimeters are often bewildered by the fringe loss upon high-acceleration dynamic process diagnosis, the optic-fiber velocimeters such as DISAR and PDV, on the other hand, are puzzled by high velocity measurement over 10 km/s, due to the demand for the high bandwidth digitizer. Here, we describe a new optic-microwave mixing velocimeter (OMV) for super-high velocity measurements. By using currently available commercial microwave products, we have constructed a simple, compact, and reliable OMV device, and have successfully obtained, with a digitizer of bandwidth 6 GH only, the precise velocity history of an aluminum flyer plate being accelerated up to 11.2 km/s in a three stage gas-gun experiment.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2012

Spin-torque diode spectrum of ferromagnetically coupled (FeB/CoFe)/Ru/(CoFe/FeB) synthetic free layer

We investigated systematically the spin torque diode spectrum of a ferromagnetically coupled (FeB/CoFe)/Ru/(CoFe/FeB) synthetic free layer in an MgO-based magnetic tunnel junction. In the spectra, we observed single peaks shifted to higher frequency with increasing the in-plane magnetic fields, as expected from the ferromagnetic resonance of the FeB/CoFe adjacent to the MgO tunnel barrier. On the other hand, under the perpendicular fields, we observed several peaks below 6 GHz and around 10 GHz, which were rather insensitive to the field. These behaviors are different from our simple calculation taking account the interlayer coupling, suggesting that the excitation of magnetizations occurs in a complicated manner for the synthetic free layers.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Properties of Alfvén eigenmodes in the Toroidal Alfvén Eigenmode range on the National Spherical Torus Experiment-Upgrade

A second Neutral Beam (NB) injection line is being installed on the NSTX Upgrade device, resulting in six NB sources with different tangency radii that will be available for heating and current drive. This work explores the properties of instabilities in the frequency range of the Toroidal Alfvén Eigenmode (TAE) for NSTX-U scenarios with various NB injection geometries, from more perpendicular to more tangential, and with increased toroidal magnetic field with respect to previous NSTX scenarios. Predictions are based on analysis through the ideal MHD code NOVA-K. For the scenarios considered in this work, modifications of the Alfvén continuum result in a frequency up-shift and a broadening of the radial mode structure. The latter effect may have consequences for fast ion transport and loss. Preliminary stability considerations indicate that TAEs are potentially unstable with ion Landau damping representing the dominant damping mechanism.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

The impact of inverse photoemission spectroscopy measurements on regioregular poly(3-hexylthiophene) films

Inverse photoemission spectroscopy (IPES) enables the characterization of the density of states of unoccupied energy states above the Fermi level. However, due to the relatively high electron currents required to achieve useful signal to noise ratios, sample damage is a concern. Regioregular poly(3-hexylthiophene) (rr-P3HT) was used to systematically study the influence of electron radiation during IPES measurements on a prototypical conductive polymer. A series of IPES measurements exposing the samples to a range of electron fluxes was performed. An analysis of the electronic structure and the morphology showed that significant changes occurred in the investigated samples depending on the electron flux. X-ray diffraction results revealed that the root cause of the spectral changes is most likely related to crystallization of the film in an edge-on orientation. This was confirmed by Raman spectroscopy where both the C-C and C=C stretch modes shifted to lower frequencies after 5 IPES scans indicating a more ordered molecular structure. The observation of these stretch modes even after exposure to higher electron flux indicates that the main chemical structure of the P3HT molecules remains mostly intact during the IPES measurements. The absence of significant changes in C 1s and S 2p photoemission core level lines also confirmed this conclusion.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Influence of hydrogen and hydrogen/methane plasmas on AlN thin films

Polycrystalline aluminum nitride (AlN) thin films are exposed to hydrogen and hydrogen/methane plasmas at different conditions. The latter plays an indispensable role in the subsequent deposition of nanocrystalline diamond thin films on AlN. The changes of AlN properties are investigated by means of Fourier transform infrared (FTIR) and Raman spectroscopies as well as atomic force microscopy. The E{sub 1}(TO) and E{sub 2}{sup 2} phonon mode frequencies blue-shift after the exposure to plasmas. The damping constant of E{sub 1}(TO) phonon, calculated from FTIR transmission spectra using the factorized model of a damped oscillator, and the width of E{sub 2}{sup 2} peak in Raman spectra decrease with increasing substrate temperature till the decomposition of AlN thin film becomes notable. It is proven that these changes are driven by the plasmas as annealing in vacuum does not induce them.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Phonons and magnetic excitation correlations in weak ferromagnetic YCrO{sub 3}

Here, we report the temperature dependent Raman spectroscopic studies on orthorhombically distorted perovskite YCrO{sub 3} over a temperature range of 20–300 K. Temperature dependence of DC-magnetization measurements under field cooled and zero field cooled protocols confirmed a Néel transition at T{sub N} ∼ 142 K. Magnetization isotherms recorded at 125 K show a clear loop opening without any magnetization saturation up to 20 kOe, indicating a coexistence of antiferromagnetic (AFM) and weak ferromagnetic (WFM) phases. Estimation of exchange constants using mean-field approximation further confirm the presence of a complex magnetic phase below T{sub N}. Temperature evolution of Raman line-shape parameters of the selected modes (associated with the octahedral rotation and A(Y)-shift in the unit-cell) reveal an anomalous phonon shift near T{sub N}. An additional phonon anomaly was identified at T{sup *} ∼ 60 K, which could possibly be attributed to the change in the spin dynamics. Moreover, the positive and negative shifts in Raman frequencies between T{sub N} and T{sup *} suggest competing WFM and AFM interactions. A close match between the phonon frequency of B{sub 3g} (3)-octahedral rotation mode with the square of sublattice magnetization between T{sub N} and T{sup *} is indicative of the presence of spin-phonon coupling in multiferroic YCrO{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effects of Er doping on Raman spectra and on the structural properties of YbMnO{sub 3}

Polycrystalline samples of Yb{sub 1-x}Er{sub x}MnO{sub 3} (x= 0, 0.1 and 0.2) were prepared by a solid state reaction procedure. Detailed crystal structure studies were performed using X-ray diffraction data obtained at room temperature. The application of the Rietveld method confirmed the reported hexagonal P6{sub 3}cm phase. Crystallographic parameters for the pure compounds are in agreement with those found in the literature. Changes in the lattice parameters, unit-cell volume, and polyhedral distortions observed in the compounds are explained as a function of x. Raman spectra show that the phonon peaks of Yb{sub 1-x}Er{sub x}MnO{sub 3} slightly shift to lower frequencies with doping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Raman spectra of Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} magnetic quaternary semiconductor compounds with tetragonal stannite type structure

A comparative study of the Raman spectra of Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} and Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI}(where B = Mn or Fe) magnetic quaternary semiconductor compounds with stannite-type structure (I4{sup ¯}2m) has been done. Most of the fourteen Raman lines expected for these materials were observed in the spectra. The two strongest lines observed have been assigned to the IR inactive A{sub 1}{sup 1} and A{sub 1}{sup 2} stannite modes that originated from the motion of the S or Se anion around the Cu and C{sup IV} cations remaining at rest. The shift in the frequency of these two lines of about 150 cm{sup −1} to lower energies observed in Cu{sub 2}B{sup II}C{sup IV}Se{sub 4}{sup VI} compounds as compared to those in Cu{sub 2}B{sup II}C{sup IV}S{sub 4}{sup VI} ones, can then be explained as due to the anion mass effect. Based on the fact that values of these frequencies depend mainly on anion mass and bond-stretching forces between nearest-neighbor atoms, the vibrational frequencies v{sup ¯}(A{sub 1}{sup 2}) and v{sup ¯}(A{sub 1}{sup 2}) of both modes for several Cu{sub 2}B{sup II}C{sup IV}X{sub 4}{sup VI} stannite compounds (where X = S, Se, or Te) very close to the experimental data reported for these materials were calculated from a simple model that relates these stretching forces to the anion-cation bond-distances.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Large magneto-optic enhancement in ultra-thin liquid-phase-epitaxy iron garnet films

Significant departures from bulk-like magneto-optic behavior are found in ultra-thin bismuth-substituted iron-garnet films grown by liquid-phase-epitaxy. These changes are due, at least in part, to geometrical factors and not to departures from bulk-composition in the transient layer at the film-substrate interface. A monotonic increase in specific Faraday rotation with reduced thickness is the signature feature of the observed phenomena. These are traced to size-dependent modifications in the diamagnetic transition processes responsible for the Faraday rotation. These processes correspond to the electronic transitions from singlet {sup 6}S ground states to spin-orbit split excited states of the Fe{sup 3+} ions in the garnet. A measurable reduction in the corresponding ferrimagnetic resonance linewidths is found, thus pointing to an increase in electronic relaxation times and longer lived excitations at reduced thicknesses. These changes together with a shift in vibrational frequency of the Bi-O bonds in the garnet at reduced thicknesses result in greatly enhanced magneto-optical performance. These studies were conducted on epitaxial monocrystalline Bi{sub 0.8}Gd{sub 0.2}Lu{sub 2}Fe{sub 5}O{sub 12} films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗