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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

A Study on the Impact of Temperature-Dependent Ferroelectric Switching Behavior in 3D Memory Architecture

The flourishing development of neural networks that require exponentially growing amounts of data has presented an elevated demand for memory footprint. To address this, researchers have been exploring hardware accelerators with innovative memory architectures like 3D memory. These 3D memory architectures offer enhanced storage capacity and processing capabilities, at a cost of rising on-chip temperature during operation. Hafnium Zirconium Oxide (HZO) based Ferroelectric Random Access Memory (FeRAM) is a promising nonvolatile memory candidate in neural network hardware accelerators for its outstanding write performance and reliability. However, its implementation in the architecture regarding the temperature-dependent ferroelectric switching behavior has not been well studied. In this work, we study the thermal impacts on polarization switching through experimental devices and simulation results. We conduct the circuit and architecture-level simulations to showcase that one can exploit this temperature rise to reduce FeRAM's write voltage and write energy due to its unique temperature-activated polarization switching mechanisms. As the on-chip temperature increases to 351K (ambient temperature at 300K) due to neural network workloads, the access energy per bit can be reduced by 27.6% when a dynamic write voltage is applied.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Deep learning of accurate force field of ferroelectric HfO 2

The discovery of ferroelectricity in HfO 2 -based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density nonvolatile memories. The functional performances of ferroelectrics are intimately related to their dynamic responses to external stimuli such as electric fields at finite temperatures. Molecular dynamics is an ideal technique for investigating dynamical processes on large length and time scales, though its applications to new materials are often hindered by the limited availability and accuracy of classical force fields. Here we present a deep neural network–based interatomic force field of HfO 2 learned from ab initio data using a concurrent learning procedure. The model potential is able to predict structural properties such as elastic constants, equation of states, phonon dispersion relationships, and phase transition barriers of various hafnia polymorphs with accuracy comparable with density functional theory calculations. Here, the validity of this model potential is further confirmed by the reproduction of experimental sequences of temperature-driven ferroelectric-paraelectric phase transitions of HfO 2 with isobaric-isothermal ensemble molecular dynamics simulations. We suggest a general approach to extend the model potential of HfO 2 to related material systems including dopants and defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Phase transitions of the ferroelectric (ND 4 ) 2 FeCl 5 ·D 2 O under magnetic field

Due to the strong coupling between magnetism and ferroelectricity, (ND 4 ) 2 FeCl 5 ·D 2 O exhibits several intriguing magnetic and electric phases. In this Letter, we include higher-order onsite anisotropic spin interactions to explain the ferroelectric phase transitions of (ND 4 ) 2 FeCl 5 ·D 2 O in a magnetic field and to produce the large weights of high-order harmonic components in the cycloid structure that are observed from neutron diffraction experiments. Moreover, we predict a new ferroelectric phase sandwiched between the FE II and FE III phases in a magnetic field. Furthermore, by emphasizing the importance of the higher-order spin anisotropic interactions, our work provides a framework to understand multiferroic materials with rich phase diagrams.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Anomalous elastic softening in ferroelectric hafnia under pressure

his study employs first-principles density-functional theory (DFT) calculations to explore the elastic and mechanical properties of ferroelectric hafnia (HfO 2 ) in its polar orthorhombic 𝑃⁢𝑐⁢𝑎⁢2 1 phase under varying hydrostatic pressure conditions up to 30 GPa. Utilizing a plane-wave basis set and Perdew-Burke-Ernzerhof generalized-gradient approximation for solids in our DFT calculations, we investigate both pure and yttrium-substituted HfO 2 . Our findings reveal an anomalous reduction in the 𝐶 33 component of the elastic tensor with increasing pressure, which becomes significant above 15 GPa and signals a potential pressure-driven structural phase transition at higher pressure. The analysis of atomic displacements under pressure sheds light on the unusual mechanical behavior and phase stability of this material. Additionally, we observe a transition from an indirect band gap to a direct band gap with increasing pressure, which could have significant implications for optical applications. Here, the effects of yttrium substitution on the mechanical and electronic properties are further examined, revealing that yttrium substitution softens the elastic response of this material and reduces the electronic band gap. These results enhance our understanding of elastic and mechanical responses of ferroelectric hafnia and its potential for applications in microelectronics, piezoelectric devices, and nonvolatile ferroelectric random-access memories. Further experimental validation is recommended to confirm our predictions and explore the practical implications of the observed phase transitions and electronic behavior of the ferroelectric hafnia under high-pressure conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Self-assembled vertically aligned nanocomposite systems integrated on silicon substrate: Progress and future perspectives

Silicon (Si) integration is a critical step for implementing functional oxides into Si-based electronic devices, considering the advantages of low-cost and scalability of Si substrates. In the past decade, self-assembled vertically aligned nanocomposites (VANs) have attracted enormous research interest owing to their unique multifunctionalities and highly tunable physical properties as well as their one-step self-assembly process. Most of the VAN thin films have been reported to grow epitaxially on single crystalline oxide substrates, however, with limited systems reported on Si substrates due to the very large lattice mismatch between oxides and Si lattices. In this review, the current progress for self-assembled VAN systems integrated on a Si substrate is summarized. Buffer layered enabled VAN growth has been proven to be an effective approach for improving the epitaxial quality of oxide-oxide and oxide-metal VAN systems, while direct growth is preferred in nitride-metal VAN systems. Furthermore, the material versatility enables the Si-integrated VAN thin films to exhibit distinct physical properties such as ferromagnetism, ferroelectricity, magnetoresistance, as well as unique optical properties. The review also summarizes the various parameters for tuning the growth morphologies and corresponding properties for the VAN systems, including phase molar ratio, deposition frequency, buffer layers, background pressure, etc. Finally, future perspectives are discussed including new VAN system exploration, physical properties tuning, as well as design and fabrication of Si-based nanoelectronics and nanophotonic devices applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Stacking Fault Induced Symmetry Breaking in van der Waals Nanowires

While traditional ferroelectrics are based on polar crystals in bulk or thin film form, two-dimensional and layered materials can support mechanisms for symmetry breaking between centrosymmetric building blocks, e.g., by creating low-symmetry interfaces in van der Waals stacks. Here, we introduce an approach toward symmetry breaking in van der Waals crystals that relies on the spontaneous incorporation of stacking faults in a nonpolar bulk layer sequence. The concept is realized in nanowires consisting of Se-rich group IV monochalcogenide (GeSe 1–x S x ) alloys, obtained by vapor–liquid–solid growth. The single crystalline wires adopt a layered structure in which the nonpolar A-B bulk stacking along the nanowire axis is interrupted by single-layer stacking faults with local A-A' stacking. Density functional theory explains this behavior by a reduced stacking fault formation energy in GeSe (or Se-rich GeSe 1–x S x alloys). Computations demonstrate that, similar to monochalcogenide monolayers, the inserted A-layers should show a spontaneous electric polarization with a switching barrier consistent with a Curie temperature above room temperature. Second-harmonic generation signals are consistent with a variable density of stacking faults along the wires. Here, our results point to possible routes for designing ferroelectrics via the layer stacking in van der Waals crystals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

X-ray-induced piezoresponse during X-ray photon correlation spectroscopy of PbMg 1/3 Nb 2/3 O 3

X-ray photon correlation spectroscopy (XPCS) holds strong promise for observing atomic-scale dynamics in materials, both at equilibrium and during non-equilibrium transitions. Here an in situ XPCS study of the relaxor ferroelectric PbMg 1/3 Nb 2/3 O 3 (PMN) is reported. A weak applied AC electric field generates strong response in the speckle of the diffuse scattering from the polar nanodomains, which is captured using the two-time correlation function. Correlated motions of the Bragg peak are also observed, which indicate dynamic tilting of the illuminated volume. This tilting quantitatively accounts for the observed two-time speckle correlations. The magnitude of the tilting would not be expected solely from the modest applied field, since PMN is an electrostrictive material with no linear strain response to the field. A model is developed based on non-uniform static charging of the illuminated surface spot by the incident micrometre-scale X-ray beam and the electrostrictive material response to the combination of static and dynamic fields. The model qualitatively explains the direction and magnitude of the observed tilting, and predicts that X-ray-induced piezoresponse could be an important factor in correctly interpreting results from XPCS and nanodiffraction studies of other insulating materials under applied AC field or varying X-ray illumination.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Magnetoelectric effect arising from a field-induced pseudo Jahn-Teller distortion in a rare-earth magnet

Magnetoelectric materials are attractive for several applications, including actuators, switches, and magnetic field sensors. Typical mechanisms for achieving a strong magnetoelectric coupling are rooted in transition metal magnetism. In sharp contrast, here we identify CsEr(MoO 4 ) 2 as a magnetoelectric material without magnetic transition metal ions, thus ensuring that the Er ions play a key role in achieving this interesting property. Our detailed study includes measurements of the structural, magnetic, and magnetoelectric properties of this material. Bulk characterization and neutron powder diffraction show no evidence for structural phase transitions down to 0.3 K and therefore CsEr(MoO 4 ) 2 maintains the room temperature P2/c space group over a wide temperature range without external magnetic field. These same measurements also identify collinear antiferromagnetic ordering of the Er 3+ moments below T N =0.87K. Complementary dielectric constant and pyroelectric current measurements reveal that a ferroelectric phase with a maximum polarization P~0.6 nC/cm 2 emerges when applying a modest external magnetic field, which indicates that this material has a strong magnetoelectric coupling. Finally, we argue that the magnetoelectric coupling in this system arises from a pseudo Jahn-Teller distortion induced by the magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Observation of Weyl fermions in a magnetic non-centrosymmetric crystal

The absence of inversion symmetry in non-centrosymmetric materials has a fundamental role in the emergence of a vast number of fascinating phenomena, like ferroelectricity, second harmonic generation, and Weyl fermions. The removal of time-reversal symmetry in such systems further extends the variety of observable magneto-electric and topological effects. Here we report the striking topological properties in the non-centrosymmetric spin-orbit magnet PrAlGe by combining spectroscopy and transport measurements. By photoemission spectroscopy below the Curie temperature, we observe topological Fermi arcs that correspond to projected topological charges of ±1 in the surface Brillouin zone. In the bulk, we observe the linear energy-dispersion of the Weyl fermions. We further observe a large anomalous Hall response in our magneto-transport measurements, which is understood to arise from diverging bulk Berry curvature fields associated with the Weyl band structure. These results establish a novel Weyl semimetal phase in magnetic non-centrosymmetric PrAlGe.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Optical transient grating pumped X-ray diffraction microscopy for studying mesoscale structural dynamics

Abstract A fundamental understanding of materials’ structural dynamics, with fine spatial and temporal control, underpins future developments in electronic and quantum materials. Here, we introduce an optical transient grating pump and focused X-ray diffraction probe technique (TGXD) to examine the structural evolution of materials excited by modulated light with a precisely controlled spatial profile. This method adds spatial resolution and direct structural sensitivity to the established utility of a sinusoidal transient-grating excitation. We demonstrate TGXD using two thin-film samples: epitaxial BiFeO 3 , which exhibits a photoinduced strain (structural grating) with an amplitude proportional to the optical fluence, and FeRh, which undergoes a magnetostructural phase transformation. In BiFeO 3 , structural relaxation is location independent, and the strain persists on the order of microseconds, consistent with the optical excitation of long-lived charge carriers. The strain profile of the structural grating in FeRh, in comparison, deviates from the sinusoidal excitation and exhibits both higher-order spatial frequencies and a location-dependent relaxation. The focused X-ray probe provides spatial resolution within the engineered optical excitation profile, resolving the spatiotemporal flow of heat through FeRh locally heated above the phase transition temperature. TGXD successfully characterizes mesoscopic energy transport in functional materials without relying on a specific transport model.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Epitaxial SrTiO 3 films with dielectric constants exceeding 25,000

Significance Semiconductor interfaces are among the most important in use in modern technology. The properties they exhibit can either enable or disable the characteristics of the materials they connect for functional performance. While much is known about important junctions involving conventional semiconductors such as Si and GaAs, there are several unsolved mysteries surrounding interfaces between oxide semiconductors. Here we resolve a long-standing issue concerning the measurement of anomalously low dielectric constants in SrTiO 3 films with record high electron mobilities. We show that the junction between doped and undoped SrTiO 3 required to make dielectric constant measurements masks the dielectric properties of the undoped film. Through modeling, we extract the latter and show that it is much higher than previously measured.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Linking Domain Structure Evolution at a Grain Boundary to Piezoelectric Response via Nano‐Diffraction

Electric-field-induced domain structure switching in a 1 𝜇⁢m -thick Pb 0.99 (Zr 0.45 Ti 0.55 ) 0.98 Nb 0.02 O 3 (Nb-doped PZT) bicrystal film was characterized in situ via nano-focused synchrotron diffraction. The epitaxial film was deposited on a (100) SrTiO 3 bicrystal substrate. The changes in domain structure were mapped within a 5 𝜇⁢m × 5 𝜇⁢m area at and around an in-plane tilt-type (23.6°) grain boundary with 50 nm spatial resolution. Rocking curves collected at each point of the mapped area provided the ability to reconstruct spatially-varying three-dimensional (3D) reciprocal space maps around the grain boundary. The 3D reciprocal space maps reveal how different tilted 𝑎 -type domain variants interact with the grain boundary as a function of increasing electric field. Initially, a subset of 𝑎 -type domain variants with their polarization vectors largely orthogonal to the grain boundary were found in greater abundance within 570 nm of the grain boundary, possibly due to X-ray beam-induced local increases in the electrical conductivity, but after the coercive field was exceeded, reconfiguration of the ferroelastic domains was observed. The spatially-varying reciprocal space maps also facilitated evaluation of the strain field across the mapped area, along with 𝑑 33,𝑓 . Significant spatial heterogeneity of strain and 𝑑 33,𝑓 are observed, especially at the coercive field, which was attributed to maintaining deformation compatibility and correlated ferroelastic switching.

36 MATERIALS SCIENCE↗
NASA NTRS2003

Continuous Optimization of Thin Film Ferroelectrics for Tunable Microwave Devices for Communications Applications

During the last decades thin film ferroelectrics have been investigated in great detail because of their versatility and advantages for tunable devices. Many reports on tunable components such as resonators, filters, oscillators and phase shifters have been published by researchers all around world. These efforts have shed light on the primary advantages as well as the current shortcomings of these materials that should be considered for the development of practical microwave devices and systems. In this paper, we intend to discuss the most relevant outcomes of current collaborations taking place at the NASA Glenn Research Center aimed at improving the quality of ferroelectric microwave components (e.g., phase shifters) via careful processing and evaluation of the materials properties of the thin films. To the extent that our applications allow, we have worked with fixed circuit configurations to determine which material modifications are of most impact to the performance of a given circuit. Examples on the improvements on the performance of these circuits will be provided.

Miranda, Felix A.↗
DOE OSTI2021

Ferroelectric and Charge Transport Properties in Strain-Engineered Two-Dimensional Lead Iodide Perovskites

Transitions from three-dimensional (3D) hybrid organic–inorganic perovskite (HOIP) structures to lower dimensions including 2D and quasi-2D structures open a new range of functional properties in these materials systems. Yet, the performance of solar cells made from 2D HOIP is below that of the 3D compositions due to the higher band-gap energy, low carrier concentration, and anisotropy in charge transport. Controlling ferroelectricity in 2D HOIPs is considered to be a powerful strategy to drive the spatial separation of photogenerated charge carriers to improve the photovoltaic action in this class of HOIPs. Here, we explore the strain-dependent ferroelectricity and charge carrier properties in strain-engineered 2D-layered HOIPs utilizing advanced scanning probe microscopy (SPM) techniques. Band excitation-piezoresponse force microscopy (BE-PFM) and contact Kelvin probe force microscopy (cKPFM) reveal ferroelectric domains and switchable dynamics with significantly low switching voltages in the low-strain film. Photoluminescence (PL) spectroscopy shows strain-dependent optical properties and a noncentrosymmetric structure with strong second-harmonic generation (SHG) peaks in the low-strain film. In addition, KPFM results demonstrate a higher surface potential in the low-strain films, while the photovoltage and local current are the highest on the high-strain film. Furthermore, our study demonstrates the critical role of strain engineering on the electromechanical and charge carrier dynamics in 2D HOIPs, which is important for development of 2D HOIP devices.

36 MATERIALS SCIENCE↗
NASA NTRS2005

NASA Tech Briefs, June 2005

Topics covered include: Apparatus Characterizes Transient Voltages in Real Time; Measuring Humidity in Sealed Glass Encasements; Adaptable System for Vehicle Health and Usage Monitoring; Miniature Focusing Time-of-Flight Mass Spectrometer; Cryogenic High-Sensitivity Magnetometer; Wheel Electrometer System; Carbon-Nanotube Conductive Layers for Thin-Film Solar Cells; Patch Antenna Fed via Unequal-Crossed-Arm Aperture; LC Circuits for Diagnosing Embedded Piezoelectric Devices; Nanowire Thermoelectric Devices; Code for Analyzing and Designing Spacecraft Power System Radiators; Decision Support for Emergency Operations Centers; NASA Records Database; Real-Time Principal- Component Analysis; Fuzzy/Neural Software Estimates Costs of Rocket- Engine Tests; Multicomponent, Rare-Earth-Doped Thermal-Barrier Coatings; Reactive Additives for Phenylethynyl-Containing Resins; Improved Gear Shapes for Face Worm Gear Drives; Alternative Way of Shifting Mass to Move a Spherical Robot; Parylene C as a Sacrificial Material for Microfabrication; In Situ Electrochemical Deposition of Microscopic Wires; Improved Method of Manufacturing SiC Devices; Microwave Treatment of Prostate Cancer and Hyperplasia; Ferroelectric Devices Emit Charged Particles and Radiation; Dusty-Plasma Particle Accelerator; Frozen-Plug Technique for Liquid-Oxygen Plumbing; Shock Waves in a Bose-Einstein Condensate; Progress on a Multichannel, Dual-Mixer Stability Analyzer; Development of Carbon- Nanotube/Polymer Composites; Thermal Imaging of Earth for Accurate Pointing of Deep-Space Antennas; Modifications of a Composite-Material Combustion Chamber; Modeling and Diagnostic Software for Liquefying- Fuel Rockets; and Spacecraft Antenna Clusters for High EIRP.

Source record↗
DOE OSTI2021

Assembly of Close–Packed Ferroelectric Polymer Nanowires via Interface–Epitaxy with ReS 2

The flexible, transparent, and low-weight nature of ferroelectric polymers makes them promising for wearable electronic and optical applications. To reach the full potential of the polarization-enabled device functionalities, large-scale fabrication of polymer thin films with well-controlled polar directions is called for, which remains a central challenge. The widely exploited Langmuir–Blodgett, spin-coating, and electrospinning methods only yield polymorphous or polycrystalline films, where the net polarization is compromised. Here, an easily scalable approach is reported to achieve poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) thin films composed of close-packed crystalline nanowires via interface-epitaxy with 1T'-ReS 2 . Upon controlled thermal treatment, uniform P(VDF-TrFE) films restructure into about 10 and 35 nm-wide (010)-oriented nanowires that are crystallographically aligned with the underlying ReS 2 , as revealed by high-resolution transmission electron microscopy. Piezoresponse force microscopy studies confirm the out-of-plane polar axis of the nanowire films and reveal coercive voltages as low as 0.1 V. Reversing the polarization can induce a conductance switching ratio of >10 8 in bilayer ReS 2 , over six orders of magnitude higher than that achieved by an untreated polymer gate. Lastly, this study points to a cost-effective route to large-scale processing of high-performance ferroelectric polymer thin films for flexible energy-efficient nanoelectronics.

crystalline nanowires↗