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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Anomalous Hall effect in conical helimagnetic crystals

Spin-spiral texture can substantially change charge transport properties in helimagnets. Here we find the anomalous Hall effect (AHE) exhibiting the dramatic behavior with respect to chemical potential μ in conical magnetic structures. The direct conductivity demonstrates kinks, and the anomalous Hall current exhibits minima and maxima changing the sign. We analytically derive the expression for energy bands and eigenstates in the most general case. Because of the conical potential, the energy bands are split into two nonparabolic bands where the lower band can have one- or two-minima shapes in the k z direction ($\hat{z}$ is a direction of the spiral axis). We prove that the origin of the anomalous Hall effect is not topological and is due to the interplay between the asymmetry of energy bands in the x and z directions and spin restrictions in the phase space due to the conical potential. We also investigate the dependence of transport properties on cone half- angle θ, and find that the effects are most pronounced at θ=π/2 (a helical state). Electric current is calculated using the Boltzmann equation where the relaxation is caused by electron-acoustic phonon interaction. The transition probability is found to be a 2×2 matrix with nonvanishing off-diagonal elements indicating the strong interband transitions. The origin of interband transitions is because of the nature of the conical potential where conduction electron spins interact with localized magnetic moments. To verify the proposed theory, we calculate the temperature dependence of resistivity for MnSi crystals and find the discontinuity at the phase transition between conical and paramagnetic phases. The calculations are in the excellent agreement with the experimental data. In addition, we predict the discontinuity behavior for the anomalous Hall resistivity at the phase transition where the resistivity exhibits the abrupt change at T=T C , (a) to zero if the relativistic effects for the conduction electrons are small or (b) to a nonzero value if Rashba/Dresselhaus effects are taken into account.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗
DOE OSTI2024

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗
DOE OSTI2020

Intersubband Relaxation in CdSe Colloidal Quantum Wells

The dynamics of intersubband relaxation are critical to quantum well technologies such as quantum cascade lasers and quantum well infrared photodetectors. In this work, intersubband relaxation in CdSe colloidal quantum wells, or nanoplatelets, is studied via pump-push-probe transient spectroscopy. An initial interband pump pulse is followed by a secondary infrared push excitation, resonant with intersubband absorption, which promotes electrons from the first conduction band of the quantum well to the second conduction band. A probe pulse monitors subsequent electron cooling to the band edge of the quantum well. Using this technique, intersubband relaxation is studied as a function of critical variables such as colloidal quantum well size and thickness, surface ligand chemistry, temperature, and excitation pulse intensity. Larger quantum well sizes, judicious selection of surface ligand chemistry (e.g., thiolates), low temperatures, and elevated push pulse fluences slow intersubband relaxation. However, compared to resonant intraband relaxation in colloidal quantum dots (up to hundreds of picoseconds), intersubband relaxation in colloidal quantum wells is rapid (<1 ps) under all examined conditions. These experiments indicate that rapid relaxation is driven by both LO phonon and surface scattering. The short time scale of relaxation observed in these materials may hinder intersubband technologies such as mid-infrared detectors, although such rapid relaxation may prove valuable in optical switching.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Low resistance p-type contacts to monolayer WSe2 through chlorinated solvent doping

Tungsten diselenide (WSe 2 ) is a promising p-type semiconductor limited by high contact resistance (R C ) and the lack of a reliable doping strategy. Here, we demonstrate that exposing WSe 2 to chloroform provides simple and stable p-type doping. In monolayer WSe 2 transistors with Pd contacts, chloroform increases the maximum hole current by over 100× (>200 µA/µm), reduces R C to ~ 2.5 kΩ·μm, and retains an on/off ratio of 10 10 at room temperature. These improvements persist for over 8 months, survive a 150 °C thermal anneal, and remain effective down to 10 K, enabling a cryogenic R C of ~ 1 kΩ·μm. Density functional theory indicates that chloroform strongly physisorbs to WSe 2 , inducing hole doping with minimal impact on the electronic states between the valence band and conduction band edges. Auger electron spectroscopy and atomic force microscopy suggest that chloroform intercalates at the WSe 2 interface with the gate oxide, contributing to doping stability and mitigating interfacial dielectric disorder, though further studies are needed to conclusively confirm this mechanism. This robust, scalable approach enables high-yield WSe 2 transistors with good p-type performance.

42 ENGINEERING↗
DOE OSTI2022

Summer Student Internship: Experimental and modeling experiences

My internship at the Los Alamos National Laboratory has been an information-filled summer. Loren Espada-Castillo brought me into her project and helped mentor and guide me through the summer. The project that I was brought into was the process of shooting materials with electrons. The electron beam we used conducts a series of shots in which electrons are generated and then fired towards a target, the sample holder. The sample holder holds either a single sample or three samples. The sample holder also consists of multiple calorimeters surrounding the sample/s. The goal is to shoot certain materials and then analyze how they react to the exposure of the electrons. We shot titanium, which was meant to serve as a containment vessel window.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Improving Cost and Efficiency of the Scalable Solid Oxide Fuel Cells Power System

The objective of this project was to design and develop a 20kW range small-scale solid oxide fuel cells (SOFC) power system for applications such as data centers and commercial buildings. The original plan included a 5,000 hours demonstration and a Techno-Economic Analysis (TEA) which were dropped as part of project termination. The original project plan was to use a stack with a cross-flow cell design which had previously been tested for 500 hours at a community college in Malta, NY. However, it was decided to move to the advanced R-SOFC co-flow cell developed under Department of Energy Award DE-FE0031971. The advanced cell design has the advantage of a larger active area for the same manufacturing footprint which results in fewer required cells for the same stack power, hence a higher volumetric power density (kW/L) and lower cost per kW than the original cross-flow cell design. A full SOFC system Simulink model was developed and calibrated with testing data from a fuel cell stack and BOP (balance of plant) components. The simulation results from the calibrated model showed an acceptable match with the experimental data. A structural analysis conducted for various load scenarios indicated no high stress areas for all spatial directions. Major electrical system components were acquired, built and successfully tested. System sensors were verified and validated against controls. Safety checks, a diagnostic check, PID tuning, and control software commissioning tasks were also conducted. The power electronics prototype was delivered and trial testing completed. Balance of Plant component testing and simulation work was conducted to characterize Reformer-Heat Exchanger heat transfer and backpressure and reformer catalyst methane conversion and product selectivity. Simulations were conducted to design the Anode and Cathode fluid passages and size the air-air and fuel-fuel heat exchangers. A Burner operation map was created from test data and the Anode Gas Recirculation blower was tested to evaluate its durability. The SOFC system used a horizontal style design where components sit directly on a casting with a direct connection to the skid. This design has efficient packaging and a small footprint with approximate dimensions of 750 mm x 700 mm x 1700 mm. An SOFC system was built and successfully tested at the Malta, NY facility The system for over 500 hours under load of which over 300 hours was at full load of 20 kW.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Dual quantum spin Hall insulator by density-tuned correlations in TaIrTe 4

The convergence of topology and correlations represents a highly coveted realm in the pursuit of new quantum states of matter. Introducing electron correlations to a quantum spin Hall (QSH) insulator can lead to the emergence of a fractional topological insulator and other exotic time-reversal-symmetric topological order, not possible in quantum Hall and Chern insulator systems. Here, in this study, we report a new dual QSH insulator within the intrinsic monolayer crystal of TaIrTe 4 , arising from the interplay of its single-particle topology and density-tuned electron correlations. At charge neutrality, monolayer TaIrTe 4 demonstrates the QSH insulator, manifesting enhanced nonlocal transport and quantized helical edge conductance. After introducing electrons from charge neutrality, TaIrTe 4 shows metallic behaviour in only a small range of charge densities but quickly goes into a new insulating state, entirely unexpected on the basis of the single-particle band structure of TaIrTe 4 . This insulating state could arise from a strong electronic instability near the van Hove singularities, probably leading to a charge density wave (CDW). Remarkably, within this correlated insulating gap, we observe a resurgence of the QSH state. The observation of helical edge conduction in a CDW gap could bridge spin physics and charge orders. The discovery of a dual QSH insulator introduces a new method for creating topological flat minibands through CDW superlattices, which offer a promising platform for exploring time-reversal-symmetric fractional phases and electromagnetism.

electronic devices↗
DOE OSTI2022

Tuning Surface Acidity of Mixed Conducting Electrodes: Recovery of Si‐Induced Degradation of Oxygen Exchange Rate and Area Specific Resistance

Abstract Metal oxides are an important class of functional materials, and for many applications, ranging from solid oxide fuel/electrolysis cells, oxygen permeation membranes, and oxygen storage materials to gas sensors (semiconducting and electrolytic) and catalysts, the interaction between the surface and oxygen in the gas phase is central. Ubiquitous Si‐impurities are known to impede this interaction, commonly attributed to the formation of glassy blocking layers on the surface. Here, the surface oxygen exchange coefficient ( k chem ) is examined for Pr 0.1 Ce 0.9 O 2‐δ (PCO), a model mixed ionic electronic conductor, via electrical conductivity relaxation measurements, and the area‐specific resistance (ASR) by electrochemical impedance spectroscopy. It is demonstrated that even low silica levels, introduced by infiltration, depress k chem by a factor 4000, while the ASR increases 40‐fold and we attribute this to its acidity relative to that of PCO. The ability to fully regenerate the poisoned surface by the subsequent addition of basic Ca‐ or Li‐species is further shown. This ability to not only recover Si‐poisoned surfaces by tuning the relative surface acidity of an oxide surface, but subsequently outperform the pre‐poisoned response, promises to extend the operating life of materials and devices for which the catalytic oxygen/solid interface reaction is central.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2020

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer (140) comprising a first sputter-deposited transparent conducting oxide; an electron transport layer (130) interfacing with the first contact layer; a second contact layer (110) comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer (120) having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗
DOE OSTI2024

First-Principles Calculations of the Electrical Conductivity of Carbon Nanotubes Functionalized with Copper and Nitrogen: Implications for Electronics, Energy Storage, and Nanodevices

In this work, we investigate the electrical conductivity of carbon nanotubes (CNTs), with a particular focus on the effects of doping. Using first-principles-based approaches, we study the electronic structure, phonon dispersion, and electron–phonon scattering to understand the finite-temperature electrical transport properties in CNTs. Our study covers both prototypical metallic and semiconducting CNTs, with special emphasis on the influence of typical defects such as vacancies and the incorporation of copper or nitrogen, such as pyridinic N, pyrrolic N, graphitic N, and oxidized N. Our theoretical study shows significant improvements in the electrical conduction properties of copper-CNT composites, especially when semiconducting CNTs are functionalized with nitrogen. Doping is found to cause significant changes in the electronic density of states near the Fermi level, which affects the electrical conductivity. Calculations show that certain types of functional groups, such as N-pyrrolic, result in more than 30-fold increase in the conductivity of semiconducting CNTs compared to Cu-incorporated CNTs alone. For metallic CNTs, the conductivity is in agreement with existing experimental data, and our prediction of significant increases in conductivity with N-pyrrolic functional group is consistent with recent experimental results, demonstrating the effectiveness of doping in modifying conductivity. In conclusion, our study provides valuable insight into the electronic properties of doped CNTs and contributes to the development of ultrahigh conductivity CNT composites.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Conductive Ink with Circular Life Cycle for Printed Electronics

Electronic waste carries energetic costs and an environmental burden rivaling that of plastic waste due to the rarity and toxicity of the heavy-metal components. Recyclable conductive composites are introduced for printed circuits formulated with polycaprolactone (PCL), conductive fillers, and enzyme/protectant nanoclusters. Circuits can be printed with flexibility (breaking strain ≈80%) and conductivity (≈2.1 × 10 4 S m -1 ). These composites are degraded at the end of life by immersion in warm water with programmable latency. Approximately 94% of the functional fillers can be recycled and reused with similar device performance. The printed circuits remain functional and degradable after shelf storage for at least 7 months at room temperature and one month of continuous operation under electrical voltage. Here, the present studies provide composite design toward recyclable and easily disposable printed electronics for applications such as wearable electronics, biosensors, and soft robotics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Electrokinetic Analysis of Poorly Conductive Electrocatalytic Materials

While many factors can influence the activity of the electrochemical interface at atomic and molecular levels, the electron and ion transport have a big impact on the overall electrochemical performance. Here, we investigate how electrical resistance (conductivity) of the electrode affects the measured electrocatalytic activity using the hydrogen evolution reaction as a model reaction. We clearly demonstrate the effect of the poor electronic conductivity of MoS 2 on the electrochemical performance, as both values of the exchange current density as well as the Tafel slope depend on the level of utilization of the active material and the ohmic losses. A quantitative analysis using the composite electrode model is provided, showing the importance of the experimental conditions and good control of electrode/electrolyte system for the proper evaluation and comparison of electrocatalysts’ kinetic parameters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Experimental study of hot electron generation in shock ignition relevant high-intensity regime with large scale hot plasmas

In the shock ignition (SI) laser fusion scheme, hot electrons generated by the laser spike pulse can either preheat the fuel or strengthen the ignition shock, depending on the hot electron characteristics. We conducted a planar target experiment on the OMEGA-EP laser facility and characterized the temperature and total energy of hot electrons generated from a kilojoule-class 100-ps infrared (IR) or a 1-ns ultraviolet (UV) laser interacting with a large (L n ~330-450 μm) and hot (T e ~1-2 keV) coronal plasma at the SI-relevant intensities (~10 16 W/cm 2 ). The IR laser converts ~2.5% energy into hot electrons with T hot ~ 60–90 keV, while the UV laser couples 0.8% ± 0.7% energy into T hot =27 ± 9 keV hot electrons. The IR-produced hot electrons yield five times higher Cu Kα emission than the UV case, confirming the higher electron conversion efficiency with the IR laser. The low energy conversion from the UV laser to hot electrons may be due to the refraction of the off-normal incident laser in the large coronal plasma. These findings are the first comparisons of hot electron generation between the IR and UV pulses at kilojoule scales in SI-relevant large-scale plasmas. The findings may expand the SI design space to include IR lasers as the possible spike lasers.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Electroactive ZnO: Mechanisms, Conductivity, and Advances in Zn Alkaline Battery Cycling

Zinc oxide is of great interest for advanced energy devices because of its low cost, wide direct bandgap, non-toxicity, and facile electrochemistry. In zinc alkaline batteries, ZnO plays a critical role in electrode passivation, a process that hinders commercialization and remains poorly understood. Here, novel observations of an electroactive type of ZnO formed in Zn-metal alkaline electrodes are disclosed. The electrical conductivity of battery-formed ZnO is measured and found to vary by factors of up to 10 4 , which provides a first-principles-based understanding of Zn passivation in industrial alkaline batteries. Simultaneous with this conductivity change, protons are inserted into the crystal structure and electrons are inserted into the conduction band in quantities up to ≈10 20 cm –3 and ≈1 mAh gZnO –1 . Electron insertion causes blue electrochromic coloration with efficiencies and rates competitive with leading electrochromic materials. The electroactivity of ZnO is evidently enabled by rapid crystal growth, which forms defects that complex with inserted cations, charge-balanced by the increase of conduction band electrons. Furthermore, this property distinguishes electroactive ZnO from inactive classical ZnO. Knowledge of this phenomenon is applied to improve cycling performance of industrial-design electrodes at 50% zinc utilization and the authors propose other uses for ZnO such as electrochromic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Improving Cathode Testing with a High-Gradient Cryogenic Normal Conducting RF Photogun

Future electron accelerator applications such as X-ray free electron lasers and colliders are dependent on significantly increasing beam brightness. With the observation that linac beam manipulation’s best preservation of max brightness is at the cathode, we are incentivized to create an environment where we can study how to achieve the highest possible photogun brightness. In order to do so, we intend to extract beams from high-brightness photocathodes with the highest achievable accelerating gradients we can manage in a klystron-powered radiofrequency (RF) photogun. We utilize here cryogenic normal conducting cavities to achieve ultra-high gradients via limitation of breakdown rates (BDR). The low temperatures should also reduce cathode emittance by reducing the mean transverse energy (MTE) of electrons near the photoemission threshold. To this end, we have designed and produced a new CrYogenic Brightness-Optimized Radiofrequency Gun (CYBORG) for use in a new beamline at UCLA. We will introduce the enabling RF and photoemission physics as a primer for the new regime of high field low temperature cathodes we intend to enter. We further report the current status of the beamline commissioning, including the cooling of the photogun to 100 K, and producing 0.5 MW of RF feed power, which corresponds to cathode accelerating fields in the range of 80–90 MV/m. We further plan iterative improvements to both to 77 K and 1 MW corresponding to our ultimate goal >120 MV/m. Our discussion will include future beamline tests and the consideration of the initial realization of an ultra-high-gradient photoinjector concept.

Lawler, Gerard Emile (ORCID:0000000160113435)↗
DOE OSTI2021

Superconducting diode effect via conformal-mapped nanoholes

A superconducting diode is an electronic device that conducts supercurrent and exhibits zero resistance primarily for one direction of applied current. Such a dissipationless diode is a desirable unit for constructing electronic circuits with ultralow power consumption. However, realizing a superconducting diode is fundamentally and technologically challenging, as it usually requires a material structure without a centre of inversion, which is scarce among superconducting materials. Here, we demonstrate a superconducting diode achieved in a conventional superconducting film patterned with a conformal array of nanoscale holes, which breaks the spatial inversion symmetry. We showcase the superconducting diode effect through switchable and reversible rectification signals, which can be three orders of magnitude larger than that from a flux-quantum diode. The introduction of conformal potential landscapes for creating a superconducting diode is thereby proven as a convenient, tunable, yet vastly advantageous tool for superconducting electronics. This could be readily applicable to any superconducting materials, including cuprates and iron-based superconductors that have higher transition temperatures and are desirable in device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Fast ionic conduction achieved through the design and synthesis of ceramic heterointerfaces

Lithium (Li) chloride and iron oxychloride (FeOCl), typically nonconductive, were combined to form a [Li 1+δ Cl] δ+ /[FeOCl] δ- heterointerface composite material (LFH), achieving ionic conductivities of >1 mS cm -1 . Analysis techniques (scanning transmission electron microscopy [STEM] and electron energy-loss spectroscopy [EELS]) indicated that the microstructure of LFH consisted of an amorphous LiCl-based shell surrounding a crystalline FeOCl-based core. Electrochemical measurements alongside solid-state 6,7 Li nuclear magnetic resonance (NMR) and molecular dynamic simulations revealed Li+ as the sole conductive species, with a diffusion barrier of ~0.25 eV. X-ray photoelectron spectroscopy (XPS) and X-ray absorption fine structure (XAFS) results further supported interstitial Li + diffusion at the heterointerface and within the LiCl phase, made possible by the heterointerface. Despite susceptibility to electronic conductivity, iron’s defects and multivalency (Fe³⁺, Fe²⁺) enable the Fe–O–Cl framework to accept Cl - , facilitating Li⁺ ionic conduction. Finally, a prototype solid-state cell (showing 97% Coulombic efficiency) demonstrated the viability of this heterointerface design for applications in energy storage.

36 MATERIALS SCIENCE↗