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At least 685 records · Page 38

Anomalous vortex liquid in charge-ordered cuprate superconductors

The interplay between charge order and d-wave superconductivity in high-T c cuprates remains an open question. While mounting evidence from spectroscopic probes indicates that charge order competes with superconductivity, to date little is known about the impact of charge order on charge transport in the mixed state, when vortices are present. Here we study the low-temperature electrical resistivity of three distinctly different cuprate families under intense magnetic fields, over a broad range of hole doping and current excitations. We find that the electronic transport in the doping regime where long-range charge order is known to be present is characterized by a nonohmic resistivity, the identifying feature of an anomalous vortex liquid. The field and temperature range in which this nonohmic behavior occurs indicates that the presence of long-range charge order is closely related to the emergence of this anomalous vortex liquid, near a vortex solid boundary that is defined by the excitation current in the T→0 limit. Our findings further suggest that this anomalous vortex liquid, a manifestation of fragile superconductivity with a suppressed critical current density, is ubiquitous in the high-field state of charge-ordered cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Isoelectronic perturbations to f - d -electron hybridization and the enhancement of hidden order in URu 2 Si 2

Significance Phase transitions often manifest themselves in characteristic signatures in the electrical resistivity. Here, we track the temperature increase of the resistive signature of the hidden-order (HO) phase transition in URu 2 Si 2 , a mysterious phase with unknown order parameter. The application of pressure and the isoelectronic substitutions of Fe and Os ions for Ru are the only known perturbations to favor the HO phase. These perturbations are likely to cause increases in f - d -electron hybridization that lead to degeneracy and instabilities in the electronic band structure. The degeneracy is lifted by partial gapping of electronic states over the Fermi surface during the transition to HO. This and related investigations point to the importance of isoelectronic perturbations in generating emergent electronic phases.

Wolowiec, Christian T.↗

Probing FeSi, a d -electron topological Kondo insulator candidate, with magnetic field, pressure, and microwaves

Recently, evidence for a conducting surface state (CSS) below 19 K was reported for the correlated d -electron small gap semiconductor FeSi. In the work reported herein, the CSS and the bulk phase of FeSi were probed via electrical resistivity ρ measurements as a function of temperature T , magnetic field B to 60 T, and pressure P to 7.6 GPa, and by means of a magnetic field-modulated microwave spectroscopy (MFMMS) technique. The properties of FeSi were also compared with those of the Kondo insulator SmB 6 to address the question of whether FeSi is a d -electron analogue of an f -electron Kondo insulator and, in addition, a “topological Kondo insulator” (TKI). The overall behavior of the magnetoresistance of FeSi at temperatures above and below the onset temperature T S = 19 K of the CSS is similar to that of SmB 6 . The two energy gaps, inferred from the ρ( T ) data in the semiconducting regime, increase with pressure up to about 7 GPa, followed by a drop which coincides with a sharp suppression of T S . Several studies of ρ( T ) under pressure on SmB 6 reveal behavior similar to that of FeSi in which the two energy gaps vanish at a critical pressure near the pressure at which T S vanishes, although the energy gaps in SmB 6 initially decrease with pressure, whereas in FeSi they increase with pressure. The MFMMS measurements showed a sharp feature at T S ≈ 19 K for FeSi, which could be due to ferromagnetic ordering of the CSS. However, no such feature was observed at T S ≈ 4.5 K for SmB 6 .

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Real-space visualization of a defect-mediated charge density wave transition

Here, we study the coupled charge density wave (CDW) and insulator-to-metal transitions in the 2D quantum material 1T-TaS 2 . By applying in situ cryogenic 4D scanning transmission electron microscopy with in situ electrical resistance measurements, we directly visualize the CDW transition and establish that the transition is mediated by basal dislocations (stacking solitons). We find that dislocations can both nucleate and pin the transition and locally alter the transition temperature T c by nearly ~75 K. This finding was enabled by the application of unsupervised machine learning to cluster five-dimensional, terabyte scale datasets, which demonstrate a one-to-one correlation between resistance—a global property—and local CDW domain-dislocation dynamics, thereby linking the material microstructure to device properties. This work represents a major step toward defect-engineering of quantum materials, which will become increasingly important as we aim to utilize such materials in real devices.

4D-STEM↗

Emergent anisotropic three-phase order in critically doped superconducting diamond films

Two decades since its discovery, superconducting heavily boron-doped diamond (HBDD) still poses fundamental questions that need to be answered to unlock its full potential for quantum applications. We use electrical magnetotransport measurements of critically doped homoepitaxial single crystal HBDD films to reveal signatures of intrinsically granular superconductivity. By studying the dependence of electrical resistivity on temperature and magnetic field vector, we infer that this granularity arises from doping induced disorder. We observe an unexpected three-phase anisotropy in the magnetoresistance, accompanied by a spontaneous transverse voltage (Hall anomaly). Our findings indicate the emergence of an anisotropic order in an otherwise isotropic single crystal HBDD film, offering insights into the mechanism of superconductivity in this quantum material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

New developments in structure-property and amorphous materials research at the upgraded 16-BM-B Paris-Edinburgh press station at HPCAT

Beamline 16-BM-B of the High-Pressure Collaborative Access Team (HPCAT) at the Advanced Photon Source (APS) provides a Paris-Edinburgh press program to probe the structure and properties of crystalline and amorphous materials up to 12 GPa at room temperature or 7 GPa at 2000°C. During the recent APS upgrade, 16-BM-B undertook major improvements to its instrumentation and measurement techniques. The upgrade includes the addition of a 1.2 m horizontal “condenser” mirror and a new variable-sized collimation system, the combination of which decreases the acquisition time for energy dispersive X-ray diffraction measurements by a factor of 10 when compared to pre-upgrade measurements. The addition of a new Ge energy-sensitive detector and DANTE (XGLab) digital pulse processor allows for processing the increased diffraction counts with minimal deadtime. In addition to upgraded beamline components, new techniques are being developed for eventual release to the user community, including electrical resistivity and tomography measurements.

APS upgrade↗

Combinatorial Deposition of Ultrathick Ta-W-Au-Bi High-Entropy Alloys for Next-Generation Hohlraums by Direct-Current Magnetron Sputtering

Hohlraum temperature calculations with the model by J. H. Hammer and M. D. Rosen predict a higher X-ray drive from Ta-W-Au-Bi high-entropy alloys compared to pure Au and recently developed Ta 4 Au and Au-Bi hohlraums. Here, we study the microstructure and properties of 25-75−µm-thick Ta-W-Au-Bi alloy films deposited via combinatorial direct-current magnetron sputtering. All of the films have promising physical properties, including high electrical resistivity, that satisfy the requirements for magnetically assisted inertial confinement fusion experiments. While porosity tends to increase with increasing Bi content, we also found that films with Bi content > 44 at. % exhibited densification close to the substrate/film interface and formed a single-phase alloy. In conclusion, these findings provide a potential path forward for the development of Ta-W-Au-Bi alloys for next-generation hohlraum materials.

Magnetron sputtering↗

Topological surface conduction in Kondo insulator YbB 12

Kondo insulators have recently aroused great interest because they are promising materials that host a topological insulator state caused by the strong electron interactions. Moreover, recent observations of the quantum oscillations in the insulating state of Kondo insulators have come as a great surprise. Here, we investigate the surface electronic state of a prototype Kondo insulator YbB 12 , we measured the transport properties of single crystals and microstructures. In all samples, the temperature dependence of the electrical resistivity is insulating at high temperatures and the resistivity exhibits a plateau at low temperatures. The magnitude of the plateau value decreases with reducing sample thickness, which is quantitatively consistent with the surface electronic conduction in the bulk insulating YbB 12 . Moreover, the magnetoresistance of the microstructures exhibits a weak-antilocalization effect at low field. These results are consistent with the presence of a topologically protected surface state, suggesting that YbB 12 is a candidate material for a topological Kondo insulator. The high field resistivity measurements up to µ 0 H = 50 T of the microstructures provide supporting evidence that the quantum oscillations of the resistivity in YbB 12 occurs in the insulating bulk.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Combinatorial sputter deposition of ultrathick Au-Bi alloy films

We report gold-bismuth alloys are of interest as catalysts and catalytic sensing systems, electrochemical sensors, superconductors, and hohlraums for magnetically assisted inertial confinement fusion implosions. Radiation-hydrodynamics simulations with the Lasnex code of laser-driven hohlraums predict higher x-ray drive from Au-Bi alloys compared with cases of Au-Ta or pure Au and Bi hohlraums. Here, we use direct current magnetron sputtering in Ar gas, with co-sputtering from two elemental targets, to deposit Au-Bi alloys with Bi content of 9–77 at.% and thicknesses up to ~20 µm. Films are characterized by a combination of x-ray diffraction, Rutherford backscattering, scanning electron microscopy, substrate-curvature-based residual stress, and electronic transport measurements. Experiments are complemented by Monte Carlo simulations of ballistic sputtering and gas phase transport of depositing species and Ar gas atoms. Results show that all films are polycrystalline, with three distinct compositional regimes dominated by Au, Au 2 Bi, and Bi crystallographic phases. A metallic behavior of the temperature dependence of electrical resistivity is observed for all the films. Films with Bi content above ~30 at.% exhibit porosity, which is tolerable to hohlraum x-ray drive based on Lasnex simulations.

36 MATERIALS SCIENCE↗

Combinatorial deposition of Au–Bi alloys via high-rate magnetron sputtering

Gold–bismuth (Au–Bi) alloy films are promising candidate materials for inertial confinement fusion (ICF) hohlraums due to their high laser-to-x-ray conversion efficiency, particularly compared with Au, Ta–Au, and Bi hohlraums. However, the fabrication of uniform and dense Au–Bi alloy films remains a challenge. Here, we use a combination of Monte-Carlo modeling and experiments to demonstrate that the microstructure and properties of Au–Bi alloy films can be greatly improved when direct-current magnetron sputtering with high deposition rates of ⩾5 μm h -1 is used. Resultant films are ~90% of their maximum theoretical densities and have low O content of <1 at.%. Films with Bi content above 40 at. % exhibit high electrical resistivity >100μΩ cm, making them suitable for both magnetized and non-magnetized ICF schemes.

Materials science↗

Magnetic ordering at anomalously high temperatures in selected lanthanides: what about Pr?

Recent experiments have given evidence that for elemental Nd, Tb, and Dy the application of sufficient pressure pushes their magnetic ordering temperatures to anomalously high values. Pr metal has a dhcp structure and is trivalent with the 4f 2 configuration. Its singlet ground state suppresses magnetic order from the 15 K anticipated from de Gennes scaling to 50 mK. Four-point electrical resistivity measurements were carried out on Pr for temperatures 1.5–295 K under pressures to 48 GPa. Although no clear evidence for magnetic order (or superconductivity) is observed above 1.5 K, the temperature dependence of the resistivity gives evidence that Pr may enter a dense Kondo state above 10 GPa.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mn-induced spin glass behavior in metallic Ir 3 Sn 7-x Mn x

Transition metal stannides are usually semiconductors with a narrow band gap. We report experimental investigation on metallic Ir 3 Sn 7– x Mn x ( x = 0 and 0.56). Single crystal x-ray diffraction refinement indicates that Ir 3 Sn 7– x Mn x crystals form a cubic structure (space group Im 3 - m ) with the lattice parameter a = 9.362(4) Å for x = 0 and 9.328(6) Å for x = 0.56. The electrical resistivity shows metallic behavior between 2 K and 300 K with T 2 dependence at T < 30 K for x = 0, reflecting the Fermi-liquid ground state. While Ir 3 Sn 7 exhibits weak diamagnetism, partial substitution of Sn by Mn results in spin glass behavior in Ir 3 Sn 7- x Mn x below T g ~ 13 K for x = 0.56. Remarkably, an upturn in the resistivity is observed in x = 0.56 below ~2 T g , suggesting strong spin fluctuation. This fluctuation is suppressed by the application of magnetic field, which is reflected in the observation of negative magnetoresistance. The unusual properties that emerge due to Mn doping are discussed.

Physics↗

Effect of non-stoichiometry and pressure on superconductivity in topological semimetal PdTe

Research into topological superconductivity has been at the forefront of condensed matter physics due to both fundamental interest and potential applications in quantum computing. PdTe, is such a superconductor with a transition temperature T c ∼ 4.5 K and exhibits a nontrivial topological electronic structure, thus receiving significant attention. We report an experimental and theoretical investigation of the pressure effect on superconductivity by applying chemical non-stoichiometry and hydrostatic pressure. While T c decreases with increasing pressure through electrical resistivity, magnetization, and specific heat measurements, chemical pressure has a distinct impact from hydrostatic pressure, which could increase T c by creating negative pressure via non-stoichiometric Pd x Te with x > 1. Accompanied with this is a sign change of the Hall coefficient from negative at x < 1 to positive at x > 1. This indicates extreme sensitivity of the electronic structure to chemical non-stoichiometry, which occurs as a Pd vacancy for x < 1 and Pd interstitial for x > 1.

nonstoichiometry↗

Aluminium composites prepared by laser cladding assisted by friction stir processing

Abstract A laser cladding and friction stir processing hybrid method was employed to produce an Al matrix composite layer. The microstructure, phase composition, microhardness and conductivity of the composites were investigated. A laser cladding layer with a thickness of approximately 200 μ m was prepared on a 1060 aluminium plate and it was broken up and distributed on the Al matrix after friction stir processing. The particle/Al interfaces exhibited extremely good interfacial integrity. Microstructural observations revealed that an obvious in situ reaction occurred at the particle/Al interfaces, which effectively improved the bonding between the reinforcement phase and the matrix. TEM analysis and selected area diffraction enabled the identification of the intermetallic compounds and confirmed them to be Al 5 Fe 2 and Al 3 Fe. The average microhardness values of the friction stir processed composites reached approximately 85 HV. The electrical resistivity of the friction stir processed composites is slightly higher than that of the aluminium matrix.

Wei, Yanni (ORCID:0000000244443642)↗

Isolated spin ladders in 𝐿⁢𝑛 2 ⁢Ti 9 ⁢Sb 11 (𝐿⁢𝑛 :La–Nd) metals

Here we present the discovery and characterization of a series of antimonides 𝐿⁢𝑛 2 ⁢Ti 9⁢ Sb 11 (Ln: La–Nd) that exhibit well-isolated, 𝑛 = 2 rare-earth spin ladders. We discuss the structure of these compounds, with a particular focus on the magnetic Ln spin ladders. Nd 2 ⁢Ti 9 ⁢Sb 11 and Ce 2 ⁢Ti 9 ⁢Sb 11 exhibit antiferromagnetic interactions and a well-defined doublet ground state, whereas Pr 2 ⁡Ti 9⁢ Sb 11 exhibits a weakly magnetic singlet ground state. Nd 2 ⁢Ti 9 ⁢Sb 11 is a poor metal with an electrical resistivity of 0.1m⁢Ω cm at 300 K and weak temperature dependence. The thermal conductivity along the ladder exhibits significant field dependence even at 40 K, considerably higher than the magnetic ordering temperature of 1.1 K. Compared to compounds with transition metal spin ladders, the rare-earth elements impart much lower energy scales, making these compounds highly tunable with external stimuli like magnetic fields. In conclusion, the diverse magnetism of the rare-earth ions and Ruderman-Kittel-Kasuya-Yosida interactions further contribute to the potential for a wide array of rich magnetic ground states, positioning these materials as a rare example of an inorganic square spin-ladder platform.

Crystal growth↗

Magnetic polaron formation in EuZn2P2

Colossal magnetoresistance (CMR) has been observed across many Eu2+-based materials; however, its origin is not completely understood. Here we investigate the antiferromagnetic insulator EuZn2⁢P2 through single crystal x-ray diffraction, transmission electron microscopy, electrical transport, magnetization, dilatometry, and electron spin resonance measurements complemented by density functional theory calculations. Our electrical resistivity data reveal a large negative magnetoresistance, MR=[𝑅⁡(𝐻)−𝑅⁡(0)]/𝑅⁡(0), that reaches MR=−99.7% at 9 T near the antiferromagnetic ordering temperature 𝑇𝑁=23K. Dilatometry measurements show an accompanying field-induced lattice strain. Additionally, Eu2+ electron spin resonance reveals a strong ferromagnetic exchange interaction between Eu2+ and conduction electrons. Our experimental results in EuZn2⁢P2 are consistent with a magnetic polaron scenario and suggest magnetic polaron formation as a prevailing explanation of CMR in Eu2+-based compounds.

Cook, Matt [ORNL] (ORCID:0000000288777505)↗

Magnetic, thermal, and electronic-transport properties of EuMg 2 Bi 2 single crystals

The trigonal compound EuMg 2 Bi 2 has recently been discussed in terms of its topological band properties. These are intertwined with its magnetic properties. In this paper detailed studies of the magnetic, thermal, and electronic-transport properties of EuMg 2 Bi 2 single crystals are presented. The Eu + 2 spins 7/2 in EuMg 2 Bi 2 exhibit an antiferromagnetic (AFM) transition at a temperature T N = 6.7 K, as previously reported. By analyzing the anisotropic magnetic susceptibility χ data below T N in terms of molecular-field theory (MFT), the AFM structure is inferred to be a c -axis helix, where the ordered moments in the hexagonal a b -plane layers are aligned ferromagnetically in the a b plane with a turn angle between the moments in adjacent moment planes along the c axis of ≈ 120 ° . An alternate but less likely magnetic structure is a planar structure with nearest-neighbor Eu spins aligned at ≈ 120 ° with respect to each other, where these ordered-moment layers are stacked along the c axis. The magnetic heat capacity exhibits a λ anomaly at T N with evidence of dynamic short-range magnetic fluctuations both above and below T N . The high- T limit of the magnetic entropy is close to the theoretical value for spins 7/2. The in-plane electrical resistivity ρ ( T ) data indicate metallic character with a mild and disorder-sensitive upturn below T min = 23 K. An anomalous rapid drop in ρ ( T ) on cooling below T N as found in zero field is replaced by a two-step decrease in magnetic fields. The ρ ( T ) measurements also reveal an additional transition below T N in applied fields of unknown origin that is not observed in the other measurements and may be associated with an incommensurate to commensurate AFM transition. The dependence of T N on the c -axis magnetic field H ⊥ was derived from the field-dependent χ ( T ) , C p ( T ) , and ρ ( T ) measurements. This T N ( H ⊥ ) was found to be consistent with the prediction of MFT for a c -axis helix with S = 7 / 2 and was used to generate a phase diagram in the H ⊥ – T plane.

36 MATERIALS SCIENCE↗

Canted Eu magnetic structure in EuMnSb 2

Magnetic ordering breaks the time-reversal symmetry, greatly impacting material topological properties. Here, we report the investigation of the magnetic properties of the layered EuMnSb 2 , which has two sets of magnetic sublattices. Both the magnetization and electrical resistivity reveal two phase transitions with one at T N,Eu ~21K and the other at T N,Mn ~346K. Single crystal neutron diffraction refinement indicates that both transitions are originated from magnetic ordering. Below T N,Mn , the Mn sublattice forms the C-type antiferromagnetic (AFM) structure with moments [(4.5±0.6)μB at 7 K] pointing along the a axis. Below T N,Eu , the Eu sublattice forms the canted A-type AFM structure with moments [(5.9±0.8)μB at 7 K] lying in the ac plane but pointing (41 ± 1)° away from the a axis. Quantitative analysis indicates that the spin-spin correlation length, while anisotropic, has long-range characteristic in all directions for both the Eu and Mn sublattices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗