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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Controlled Dielectric Breakdown to Form Pinhole Passivated Contacts

This contribution explores a low-temperature route to forming dielectric pinholes to form poly-Si/dielectric/c-Si passivated contacts. The method utilizes controlled dielectric breakdown to form nanoscale pinholes in a thick (non-tunnelling) dielectric which, when annealed, allows dopant atoms to pass from doped poly-Si through the dielectric and into the c-Si wafer forming conductive pathways. We show that the pinholes can be repassivated with dopants and H diffusion which results in increased PL signals after processing. The method can be expanded to optimized dielectric passivation stacks (not just a single layer) and can be formed in parallel over the faces of the wafer in selected areas (only under the grid).

controlled dielectric breakdown↗
DOE OSTI2022

Non-noble metal based electro-catalyst compositions for proton exchange membrane based water electrolysis and methods of making

The invention provides electro-catalyst compositions for an anode electrode of an acid mediated proton exchange membrane-based water electrolysis system. The compositions include a noble metal component selected from the group consisting of iridium oxide, ruthenium oxide, rhenium oxide and mixtures thereof, and a non-noble metal component selected from the group consisting of tantalum oxide, tin oxide, niobium oxide, titanium oxide, tungsten oxide, molybdenum oxide, yttrium oxide, scandium oxide, cooper oxide, zirconium oxide, nickel oxide and mixtures thereof. Further, the non-noble metal component can include a dopant. The dopant can be at least one element selected from Groups III, V, VI and VII of the Periodic Table. The compositions can be prepared using any solution based methods involving a surfactant approach or a sol gel approach. Further, the compositions are prepared using noble metal and non-noble metal precursors. Furthermore, a thin film containing the compositions can be deposited onto a substrate to form the anode electrode.

Kumta, Prashant N.↗
DOE OSTI2022

Characterization of Engineered Pinholes in Dielectric Stacks of High-Performance Poly-Silicon Passivating Contacts

Passivating contact structures are expected to be implemented in > 50 % of industrially manufactured silicon photovoltaics produced over the next decade. One type of passivating contact utilizes a c-Si/dielectric/doped poly-Si layer stack. In cases where the dielectric layer/s are thick enough to impede tunneling of charge carriers, it was shown that disruptions (pinholes) in the dielectric are required to facilitate transport.[1] Pinholes in SiOx layers have typically been formed via high temperature annealing that allows localized breakup of this layer. This approach has drawbacks; 1) high temperature annealing increases cost and 2) pinhole formation is sensitive to both the SiOx thickness and wafer surface morphology making control of density and dimensions difficult. Recently, an alternative method of pinhole formation relying on metal assisted chemical etching (MACE) was shown to allow control over pinhole areal densities.[2] Such control is critical as both the density and dimensions of the pinholes determine saturation current density and contact resistivity. The contacts formed with the MACE process are known as polysilicon on locally etched oxide or PLEO and also result in low saturation current densities and low contact resistivity due to SiOx passivation and engineered pinhole enabled charge carrier transport, respectively. Photovoltaic devices with efficiencies greater than 20 % have recently been produced with these contacts, demonstrating the viability of contacts with engineered pinholes. Experimentally, preferential local collection of excess charge carriers has been observed and definitively connected to thermally induced pinholes in thick SiOx layers within c-Si/SiOx/poly-Si contact structures.[3] Recent work has shown that enhanced local collection of excess carriers can result from enhanced diffusion of dopants through pinholes in SiOx layers.[4] This study was restricted to simulation and characterization of poly-Si with the same dopant type as the c-Si substrates. In this work we focus our analysis on boron doped poly-Si with different stacks of dielectric layers (PLEO and PLENO where the N refers to a SiNy layer on top of the SiOx) on n-type crystalline silicon. This provides insight into how engineered pinholes affect charge collection across the p-n junction. Like previous observations of locally enhanced carrier transport through thermally induced pinholes, the EBIC images in Figure 1 shows that engineered pinholes in PLENO (1a) and PLEO (1b) also exhibit locally enhanced carrier transport at pinhole locations (bright spots in the images). We will also present detailed correlative nanoscale structural and chemical analysis using TEM imaging and EELS analysis with sample preparation guided by EBIC imaging. This allows us to connect the density and dimensions of engineered pinholes with charge carrier transport and measured photovoltaic device parameters. Our findings will accelerate the adoption of PLEO and PLENO contacts in industrially manufactured photovoltaic devices.

EBIC↗
DOE OSTI2022

Optical Transmission Characterization of Fused Silica Materials Irradiated at the CERN Large Hadron Collider

The Target Absorbers for Neutrals (TANs) represent one of the most radioactive regions in the Large Hadron Collider (LHC). Seven 40 cm long fused silica rods with different dopant specifications, manufactured by Heraeus, were irradiated in one of the TANs located around the ATLAS experiment by the Beam RAte of Neutrals (BRAN) detector group. This campaign took place during the Run 2 p+p data taking, which occurred between 2016 and 2018. This paper reports a complete characterization of optical transmission per unit length of irradiated fused silica materials as a function of wavelength (240 nm - 1500 nm), dose (up to 18 MGy), and level of OH and H$_2$ dopants introduced in the manufacturing process. The dose delivered to the rods was estimated using Monte Carlo simulations performed by the CERN FLUKA team.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Process for preparing doped lithium lanthanum zirconium oxide

A process for preparing doped-lithium lanthanum zirconium oxide (doped-LLZO) is described herein. The method involves dry doping of a co-precipitated lanthanum zirconium oxide (LZO) precursor. Dry doping is a process in which a dry powdered dopant is ground and mixed with a pre-prepared co-precipitated LZO precursor and a lithium salt to provide a LLZO precursor composition, which is subsequently calcined to form a doped-LLZO. The process described herein comprises calcining a dry, powdered (e.g., micron, sub-micron or nano-powdered) mixture of a co-precipitated LZO precursor, a dopant salt or oxide, and a lithium salt under an oxygen-containing atmosphere at a temperature in the range of about 500 to about 1100° C., and recovering the doped-LLZO after calcining.

Durham, Jessica L.↗
DOE OSTI2022

Photolithography of atomic layer resist

In a method of atomic precision advanced manufacturing (APAM), an atomic or molecular resist layer on a substrate surface is selectively depassivated by locally exciting the substrate surface with an optical beam effective to eject adsorbed atoms or molecules from the substrate surface. The substrate surface is further processed by exposing it to a precursor gas, decomposing the precursor gas to release a dopant, and incorporating the dopant into the substrate surface.

Katzenmeyer, Aaron Michael↗
DOE OSTI2023

High capacity, air-stable, structurally isomorphous lithium alloy multilayer porous foams

The invention relates to composite multilayer lithium ion battery anodes that include a porous metal alloy foam, and a lithium ion conductor coating applied to the metal alloy foam. The metal alloy foam can include structurally isomorphous alloys of lithium and, optionally, lithium and magnesium. The lithium ion conductor coating can include ternary lithium silicate, such as, lithium orthosilicate. Lithium ions from the ternary lithium silicate may be deposited within the pores of the metal alloy foam. Optionally, the lithium ion conductor coating may include a dopant. The dopant can include one or more of magnesium, calcium, vanadium, niobium and fluorine, and mixtures and combinations thereof.

Kumta, Prashant N.↗
DOE OSTI2023

High-Performance Passivating Contacts for Si PV Based on Engineered, Doped Nanopinholes through Dielectric Layers

We present a novel, industrially relevant method to fabricate high-performance poly-Si passivating contacts for Si PV. Passivating contacts based on SiOx/poly-Si layer stacks have been implemented in record-efficiency homojunction Si solar cells. In this technology, the carrier transport through a surface-passivating SiOx is enabled either by quantum-tunneling or nanopinholes. The doped poly-Si layer provides charge-carrier selectivity. Previously, the ISFH research group demonstrated a record 26.1% efficient Si homojunction cell, where transport pinholes in ~2 nm SiOx were produced by thermal breakdown at > 1000 degrees C, which is hard to control and is surface morphology-dependent. At room temperature, our new process uses electroless plating of Ag nanoparticles, followed by metal-assisted chemical etching. Nanogalvanic corrosion yields < 20 nm-wide nanopinholes in an insulating > 2 nm SiOx layer. The nanopinholes are filled by a heavily doped a-Si:H overlayer. We drive in the dopants into the Si wafer with subsequent high-temperature annealing. Preferential incorporation of dopants at pinhole locations results in nanoscale p+/n or n+/n junctions near the wafer interface. Each heavily-doped nanoscale pinhole junction collects and transports photogenerated carriers to the cell metal contacts. The density of the engineered nanopinholes can be tuned over a wide range which is critical for optimization of device performance. The same nanogalvanic corrosion principles can be applied to produce doped transport pinholes in well-passivating thick dielectric SiOx/SiNy stacks. Importantly, our process does not rely on thermal breakdown of the dielectric layers and can be applied to textured wafers resulting in Si solar cells with > 20% conversion efficiency.

dielectric layer↗
DOE OSTI2023

Phosphor thermometry device for synchronized acquisition of luminescence lifetime decay and intensity on thermal barrier coatings

A phosphor thermometry device includes a laser that generates a laser pulse onto a thermal barrier coating (TBC) applied onto a substrate. A metallic bond coat layer is on the substrate. A ceramic top coat layer is on the bond coat layer and includes an undoped layer and a doped sensing layer having co-doped first and second rare-earth luminescent dopants that emit respective first and second different emission wavelengths upon excitation by the laser pulse. A detector receives reflected, convoluted luminescence signals from the TBC. First and second photomultiplier devices detect respective first and second different emission wavelengths of the convoluted luminescence signals. A controller receives and processes signals generated from respective first and second photomultiplier devices and determines luminescence lifetime decay and intensity variations for each of the respective first and second rare-earth luminescent dopants for temperature monitoring of the TBC.

Fouliard, Quentin↗
DOE OSTI2023

Excited state management

Arrangements and techniques for providing organic emissive layers are provided, in which the emissive layer includes a first dopant having a dissociative energy level. A second dopant in the emissive layer provides a solid state sink energy level, to which doubly excited excitons and/or polarons may transition instead of to the dissociative energy level, thereby decreasing the undesirable effects of transitions to the dissociative energy level.

Forrest, Stephen R.↗
DOE OSTI2024

Carrier Dynamics and Photoluminescence in Antimony-Doped CdTe and CdSeTe

Arsenic (As)-doped graded Cd(Se,Te) photovoltaics have achieved record efficiency of 22.4%, but further increases in efficiency have been limited by doping activation of only ~1% and radiative voltage losses of ~100 meV. Antimony (Sb) can also act as a p-type dopant of Cd(Se,Te) but has received relatively little attention. We measured carrier dynamics and photoluminescence of Sb-doped CdTe and CdSeTe films grown by vapor-transport deposition, with dopant activation up to ~20% Time resolved terahertz (TRTS) and photoluminescence (TRPL) data were fit by simulating the semiconductor equations, revealing bulk lifetimes of >20 ns in CdTe:Sb and >65 ns in CdSeTe:Sb and surface recombination velocities <1000 cm/s at alumina interfaces. We also qualitatively compare transients and PL spectra of doped and undoped films, with no apparent variation associated with hole concentrations up to 1015 cm-3. Preliminary variable temperature steady state photoluminescence (VT-SSPL) indicates dominant band-gap emission in CdSeTe:Sb and no evidence of potential fluctuations with Sb-doping up to this hole concentration.

14 SOLAR ENERGY↗
DOE OSTI2024

Testing, Operation, and Analysis of a Photosensitive LArTPC

TinyTPC, a compact LArTPC with a pixelated readout system (LArPix), aims to improve energy measurements for low-energy events by enhancing ionization charge collection. It explores the effects of photosensitive dopants and xenon in liquid argon. An initial look at adding photosensitive dopant isobutylene found a 5% charge enhancement.

McCright, Hannah↗
DOE OSTI2024

TinyTPC: A TEST STAND FOR LAr DOPING

TinyTPC is a small scale liquid-argon time projection chamber (LArTPC) that studies how photosensitive dopants can improve the energy resolution of low energy events in LArTPCs. Bench tests to resolve high voltage breakdown issues and to improve the low voltage system readout are described. Experimental data with a radioactive source of Th-228 for the calibration of the pixelated readout and the characterization of TinyTPC's energy resolution is explained. Provisional results from the addition of isobutylene (photosensitive dopant) and xenon (wavelength shifter) to liquid-argon (LAr) are also presented. Further steps to improve voltage system and enhance the data collection are discussed.

Rodriguez Thorne, Paloma↗
DOE OSTI2024

Modeling and Simulation of Electrostatics of Ge$_{\text{1-x}}$Sn$_{\text{x}}$ Layers Grown on Ge Substrates

This work introduces a comprehensive simulation tool that provides a robust 1D Schrödinger – Poisson solver for modeling the electrostatics of heterostructures with an arbitrary number of layers, and non-uniform doping profiles along with the treatment of partial ionization of dopants at low temperatures. The effective masses are derived from the first-principles calculations. The solver is used to characterize three Ge 1-x Sn x /Ge heterostructures with non-uniform doping profiles and determine the subband structure at various temperatures. Here, the simulation results of the sheet carrier densities show excellent agreement with the experimentally extracted data, thus demonstrating the capabilities of the solver.

42 ENGINEERING↗
DOE OSTI2025

Structural Tuning of Self‐Conductive Polymer as Gas Diffusion Layer for Electrocatalytic Reactions at High Current

Electrocatalytic conversions offer a promising route for sustainable chemical production using renewable energy. Gas diffusion layers (GDLs) enable selective product formation at high current densities but suffer from electrolyte flooding, and polytetrafluoroethylene (PTFE)-based GDLs typically require metal conductive layers, which constrain catalyst development. A recently developed GDL configuration, electropolymerized poly(3,4-ethylenedioxythiophene) (PEDOT)-coated PTFE, demonstrates notable flooding resistance, but suffers from gas diffusion limitations at elevated currents due to limited gas diffusion through the PEDOT layer. Here, different dopants in PEDOT are exploited to modify the physical properties and enhance gas transport. ClO 4 − -doped PEDOT exhibits superior performance due to optimized physical structure, leading to increased gas permeance and faradaic efficiency (FE) for CO production during electrocatalytic CO 2 reduction. Further optimization of coverage and thickness achieved by adjusting charge density led to an optimal configuration at 33 mC cm −2 . This GDL supports various metal electrocatalysts and demonstrates FE CO of > 90% for over 150 h at −200 mA cm −2 using a commercial silver electrocatalyst. This work highlights the importance of GDL engineering in enhancing performance and durability for long-term electrocatalytic processes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Hydrated doped-BaZrO 3 proton conductors studied by positron annihilation lifetime spectroscopy

The study of defect chemistry for doped BaZrO 3 proton conductors is of particular interest because of defect interactions that can affect the proton conductivity of the material. Protons incorporated due to the material's hydration can be trapped by negatively charged immobile dopants, reducing proton mobility. The reduction of the proton conduction impedes using BaZrO 3 materials in energy conversion applications at intermediate temperatures (300°C – 600°C). The probing of proton trapping in doped BaZrO 3 is hindered by the limited availability of techniques sensitive to defect chemistries. In this work, we used positron annihilation lifetime spectroscopy (PALS) to study the defect chemistry of Y-doped and Sc-doped BaZrO 3 . Using a two-state positron trapping model we showed that PALS can be used to study the defect chemistry of hydrated dense proton conductors. Positron trapping rates and lifetimes were correlated with doping levels of the materials. Probability significance t-tests were carried out for PALS parameters to verify whether there are differences/similarities for various populations: non-doped/doped, level and type of doping, high temperature, and surface effects. Further, the results revealed that the initial doping generates a significant number of traps available for positrons. Doping in yttrium increased the positron trapping rate, while this effect was not observed with scandium. Low-temperature hydration affects specimens significantly inhibiting positron trapping at undoped BaZrO 3 material and highly doped specimens. Positronium formation in rough surface layers, and highly doped specimens was detected but does not exceed 1%.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Synthesis of Fluorine-Doped Lithium Argyrodite Solid Electrolytes for Solid-State Lithium Metal Batteries

Solid-state lithium metal batteries (SSLMBs) that utilize novel solid electrolytes (SEs) have garnered much attention because of their potential to yield safe and high-energy-density batteries. Sulfide-based argyrodite-class SEs are an attractive option because of their impressive ionic conductivity. Recent studies have shown that LiF at the interface between Li and SE enhances electrochemical stability. However, the synthesis of F-doped argyrodites has remained challenging because of the high temperatures used in the state-of-the-art solid-state synthesis methods. In this work, for the f irst time, we report F-doped Li 5+y PS 5 F y argyrodites with a tunable doping content and dual dopants (F-/Cl- and F-/Br-) that were synthesized through a solvent-based approach. Among all compositions, Li 6 PS 5 F 0.5 C l0.5 exhibits the highest Li-ion conductivity of 3.5 x 10 -4 S cm -1 at room temperature (RT). Furthermore, Li symmetric cells using Li 6 PS 5 F 0.5 Cl 0.5 show the best cycling performance among the tested cells. X-ray photoelectron spectroscopy and ab initio molecular dynamics simulations revealed that the enhanced interfacial stability of Li 6 PS 5 F 0.5 C l0.5 SE against Li metal can be attributed to the formation of a stable solid electrolyte interphase (SEI)-containing conductive species (Li 3 P), alongside LiCl and LiF. These findings open new opportunities to develop high-performance SSLMBs using a novel class of F-doped argyrodite electrolytes.

25 ENERGY STORAGE↗
DOE OSTI2020

Boosting alkaline hydrogen evolution: the dominating role of interior modification in surface electrocatalysis

The alkaline hydrogen evolution reaction (A-HER) holds great promise for clean hydrogen fuel generation but its practical utilization is severely hindered by the sluggish kinetics for water dissociation in alkaline solutions. Traditional ways to improve the electrochemical kinetics for A-HER catalysts have been focusing on surface modification, which still can not meet the demanding requirements for practical water electrolysis because of catalyst surface deactivation. In this work, we report an interior modification strategy to significantly boost the A-HER performance. Specifically, a trace amount of Pt was doped in the interior Co 2 P (Pt–Co 2 P) to introduce a stronger dopant–host interaction than that of the surface-modified catalyst. Consequently, the local chemical state and electronic structure of the catalysts were adjusted to improve the electron mobility and reduce the energy barriers for hydrogen adsorption and H–H bond formation. As a proof-of-concept, the interior-modified Pt–Co 2 P shows a reduced onset potential at near-zero volts for the A-HER, low overpotentials of 2 mV and 58 mV to achieve 10 and 100 mA cm –2 , and excellent durability for long-term utilization. The interior-modified Pt–Co 2 P delivers superior A-HER performance to Pt/C and other state-of-the-art electrocatalysts. This work will open a new avenue for A-HER catalyst design.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗