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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Enhanced power density in zero-vacuum-gap thermophotovoltaic devices

Thermophotovoltaic (TPV) devices, which convert infrared thermal radiation from a hot emitter into electricity, hold great promise for applications in energy storage and waste heat recovery. While recent advancements have developed TPV devices with high efficiency, much less attention has been focused on improving the power density. Current TPV methods face challenges in significantly boosting the power density using emitters at very high temperatures (>2000 °C) or using complex, costly architectures such as near-field TPV. Here, we present the first experimental demonstration of a novel far-field TPV concept called “zero-vacuum-gap TPV” that eliminates the vacuum or gas-filled gap in conventional designs. By incorporating a high-index, infrared-transparent, and thermally insulating fused quartz spacer, we achieved a two-fold increase in power density compared to the far-field counterpart under identical conditions. Notably, in our experiment, the zero-vacuum-gap far-field design transforms a less-optimized, low-power-density far-field device into one with one of the highest power densities reported at moderate temperatures (700–1100 °C). Moreover, our measurements using a graphite emitter surpass the blackbody limit for gap-integrated far-field devices and match the performance of near-field TPV devices with an ultrathin 200-nm gap. Our findings suggest that zero-vacuum-gap TPV offers potential for cost-effective, scalable manufacturing using current technologies. Additionally, our modelling predicts that further power enhancements over one order of magnitude are possible with other spacer materials.

14 SOLAR ENERGY↗
DOE OSTI2013

Measuring time of flight of fusion products in an inertial electrostatic confinement fusion device for spatial profiling of fusion reactions

A new diagnostic has been developed that uses the time of flight (TOF) of the products from a nuclear fusion reaction to determine the location where the fusion reaction occurred. The TOF diagnostic uses charged particle detectors on opposing sides of the inertial electrostatic confinement (IEC) device that are coupled to high resolution timing electronics to measure the spatial profile of fusion reactions occurring between the two charged particle detectors. This diagnostic was constructed and tested by the University of Wisconsin-Madison Inertial Electrostatic Confinement Fusion Group in the IEC device, HOMER, which accelerates deuterium ions to fusion relevant energies in a high voltage ({approx}100 kV), spherically symmetric, electrostatic potential well [J. F. Santarius, G. L. Kulcinski, R. P. Ashley, D. R. Boris, B. B. Cipiti, S. K. Murali, G. R. Piefer, R. F. Radel, T. E. Radel, and A. L. Wehmeyer, Fusion Sci. Technol. 47, 1238 (2005)]. The TOF diagnostic detects the products of D(d,p)T reactions and determines where along a chord through the device the fusion event occurred. The diagnostic is also capable of using charged particle spectroscopy to determine the Doppler shift imparted to the fusion products by the center of mass energy of the fusion reactants. The TOF diagnostic is thus able to collect spatial profiles of the fusion reaction density along a chord through the device, coupled with the center of mass energy of the reactions occurring at each location. This provides levels of diagnostic detail never before achieved on an IEC device.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Scaling law of electron confinement in a zero beta polywell device

Orbital theory simulation was applied to an electron trap that uses a cube shaped magnetic cusp known as a Polywell device. The purpose of this device is to create a virtual cathode in order to achieve nuclear fusion using inertial electrostatic confinement. Analytical expressions of the electron confinement time and average position within the device were obtained in terms of the current in the field coils, the dimensions of the device, and the kinetic energy of the electrons. Comparisons with numerical simulations showed good agreement over a parameter range that spanned several orders of magnitude for the current. In addition, power loss from electrons exiting the trap was estimated in order to obtain minimum power requirement to maintain a virtual cathode within the device.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Remarkable charge-trapping efficiency of the memory device with (TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1} composite charge-storage dielectric

A memory device p-Si/SiO{sub 2}/(TiO{sub 2}){sub 0.8}(Al{sub 2}O{sub 3}){sub 0.1}(TAO-81)/Al{sub 2}O{sub 3}/Pt was fabricated, in which a composite of two high-k dielectrics with a thickness of 1 nm was employed as the charge-trapping layer to enhance the charge-trapping efficiency of the memory device. At an applied gate voltage of ±9 V, TAO-81 memory device shows a memory window of 8.83 V in its C-V curve. It also shows a fast response to a short voltage pulse of 10{sup −5} s. The charge-trapping capability, the endurance, and retention characteristics of TAO-81 memory device can be improved by introducing double TAO-81 charge-trapping layers intercalated by an Al{sub 2}O{sub 3} layer. The charge-trapping mechanism in the memory device is mainly ascribed to the generation of the electron-occupied defect level in the band gap of Al{sub 2}O{sub 3} induced by the inter-diffusion between TiO{sub 2} and Al{sub 2}O{sub 3}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Multilevel characteristics and memory mechanisms for nonvolatile memory devices based on CuInS{sub 2} quantum dot-polymethylmethacrylate nanocomposites

Nonvolatile memory devices based on CuInS{sub 2} (CIS) quantum dots (QDs) embedded in a polymethylmethacrylate (PMMA) layer were fabricated using spin-coating method. The memory window widths of the capacitance-voltage (C-V) curves for the Al/CIS QDs embedded in PMMA layer/p-Si devices were 0.3, 0.6, and 1.0 V for sweep voltages of ±3, ±5, and ±7 V, respectively. Capacitance-cycle data demonstrated that the charge-trapping capability of the devices with an ON/OFF ratio value of 2.81 × 10{sup −10} was maintained for 8 × 10{sup 3} cycles without significant degradation and that the extrapolation of the ON/OFF ratio value to 1 × 10{sup 6} cycles converged to 2.40 × 10{sup −10}, indicative of the good stability of the devices. The memory mechanisms for the devices are described on the basis of the C-V curves and the energy-band diagrams.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material as well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Mapping the intrinsic photocurrent streamlines through micromagnetic heterostructure devices

Photocurrent in quantum materials is often collected at global contacts far away from the initial photoexcitation. This collection process is highly nonlocal. It involves an intricate spatial pattern of photocurrent flow (streamlines) away from its primary photoexcitation that depends sensitively on the configuration of current collecting contacts as well as the spatial nonuniformity and tensor structure of conductivity. Direct imaging to track photocurrent streamlines is challenging. Here, we demonstrate a microscopy method to image photocurrent streamlines through ultrathin heterostructure devices comprising platinum on yttrium iron garnet (YIG). We accomplish this by combining scanning photovoltage microscopy with a uniform rotating magnetic field. Here, local photocurrent is generated through a photo-Nernst type effect with its direction controlled by the external magnetic field. This enables the mapping of photocurrent streamlines in a variety of geometries that include conventional Hall bar-type devices, but also unconventional wing-shaped devices called electrofoils. In these, we find that photocurrent streamlines display contortion, compression, and expansion behavior depending on the shape and angle of attack of the electrofoil devices, much in the same way as tracers in a wind tunnel map the flow of air around an aerodynamic airfoil. This affords a powerful tool to visualize and characterize charge flow in optoelectronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Efficient algorithm for locating and sizing series compensation devices in large power transmission grids: I. Model implementation

We explore optimization methods for planning the placement, sizing and operations of Flexible Alternating Current Transmission System (FACTS) devices installed to relieve transmission grid congestion. We limit our selection of FACTS devices to Series Compensation (SC) devices that can be represented by modification of the inductance of transmission lines. Our master optimization problem minimizes the l 1 norm of the inductance modification subject to the usual line thermal-limit constraints. We develop heuristics that reduce this non-convex optimization to a succession of Linear Programs (LP) which are accelerated further using cutting plane methods. The algorithm solves an instance of the MatPower Polish Grid model (3299 lines and 2746 nodes) in 40 seconds per iteration on a standard laptop—a speed up that allows the sizing and placement of a family of SC devices to correct a large set of anticipated congestions. We observe that our algorithm finds feasible solutions that are always sparse, i.e., SC devices are placed on only a few lines. In a companion manuscript, we demonstrate our approach on realistically-sized networks that suffer congestion from a range of causes including generator retirement. In this manuscript, we focus on the development of our approach, investigate its structure on a small test system subject to congestion from uniform load growth, and demonstrate computational efficiency on a realistically-sized network.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Evaluation of Converter Performance Considering Static and Dynamic Device Part-to-Part Variability

This paper presents a methodology to incorporate and analyze the impact of semiconductor device part-to-part variation on power converter performance. By integrating extensive static and dynamic device characterization data with an automated compact model generation process that reflects manufacturing variability, device models with inherent variability features are utilized in converter simulations for a comprehensive assessment of performance impacts. The traditional converter performance evaluation process typically yields fixed efficiency values, often dismissing the inherent part-to-part variability caused by the manufacturing process of semiconductor devices. To address this limitation, a large population of devices was characterized to capture variations in static parameters-such as transfer, output, and capacitance characteristics-as well as dynamic behaviors, including switching losses. This data-driven approach enables the development of individual compact models, which were then integrated into converter simulations to evaluate efficiency ranges rather than single point estimated values. The converter simulation results show that part-to-part component variation can lead to significant efficiency deviations, exceeding several percentage points in high-power conversion applications. By offering a more accurate representation of converter behavior under real-world manufacturing conditions, this methodology enables designers to anticipate performance variability, improving the robustness of power converter designs.

device characterization↗
DOE OSTI2016

Device Engineering Towards Improved Tin Sulfide Solar Cell Performance and Performance Reproducibility

As novel absorber materials are developed and screened for their photovoltaic (PV) properties, the challenge remains to rapidly test promising candidates in high-performing PV devices. There is a need to engineer new compatible device architectures, including the development of novel transparent conductive oxides and buffer layers. Here, we consider the two approaches of a substrate-style and a superstrate-style device architecture for novel thin-film solar cells. We use tin sulfide as a test absorber material. Upon device engineering, we demonstrate new approaches to improve device performance and performance reproducibility.

14 SOLAR ENERGY↗
DOE OSTI2021

A Single Passive Gate-Driver for Series Connected Power Devices in DC Circuit Breaker Applications

This letter proposes a novel single passive gate driver solution based on passive devices to control series-connected power semiconductor devices for dc circuit breaker (DCCB) applications. The transient suppression devices (e.g., metal oxide varistors) are utilized to achieve natural voltage balancing among the series devices, while providing the discharge path of the gate capacitor of the upper devices. Here, the proposed method is very simple, cost effective and more compact compared with conventional voltage balancing method-based DCCBs. Besides, gate voltage oscillation during the voltage recovery process is mitigated by the addition of an extra gate capacitor. Simulation and experimental results are provided to verify the effectiveness of proposed method.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2014

WE-D-BRE-01: A Sr-90 Irradiation Device for the Study of Cutaneous Radiation Injury

Purpose: To determine dosimetric character for a custom-built Sr-90 beta irradiator designed for the study of Cutaneous Radiation Injury (CRI) in a porcine animal model. In the event of a radiological accident or terrorist event, Sr-90, a fission by-product, will likely be produced. CRI is a main concern due to the low energy and superficial penetration in tissue of beta particles from Sr-90. Seven 100 mCi plaque Sr-90 radiation sources within a custom-built irradiation device create a 40 mm diameter region of radiation-induced skin injury as part of a larger project to study the efficacy of a topical keratin-based product in CRI healing. Methods: A custom-built mobile irradiation device was designed and implemented for in vivo irradiations. Gafchromic™ EBT3 radiochromic film and a PTW Markus chamber type 23343 were utilized for dosimetric characterization of the beta fluence at the surface produced by this device. Films were used to assess 2-dimensional dose distribution and percent depth dose characteristics of the radiation field. Ion chamber measurements provided dose rate data within the field. Results: The radiation field produced by the irradiation device is homogeneous with high uniformity (∼5%) and symmetry (∼3%) with a steep dose fall-off with depth from the surface. Dose rates were determined to be 3.8 Gy/min and 3.3 Gy/min for film and ion chamber measurements, respectively. A dose rate of 3.4 Gy/min was used to calculate irradiation times for in vivo irradiations. Conclusion: The custom-built irradiation device enables the use of seven Sr-90 beta sources in an array to deliver a 40 mm diameter area of homogeneous skin dose with a dose rate that is useful for research purposes and clinically relevant for the induction of CRI. Doses of 36 and 42 Gy successfully produce Grade III CRI and are used in the study of the efficacy of KeraStat™. This project has been funded in whole or in part with Federal funds from the Biomedical Advanced Research and Development Authority, Office of the Assistant Secretary for Preparedness and Response, Office of the Secretary, Department of Health and Human Services, under Contract No. HHSO100201200007C.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2012

Environmentally Benign and Permanent Modifications to Prevent Biofouling on Marine and Hydrokinetic Devices (Final Report)

Semprus Biosciences is developing environmentally benign and permanent modifications to prevent biofouling on Marine and Hydrokinetic (MHK) devices. Biofouling, including growth on external surfaces by bacteria, algae, barnacles, mussels, and other marine organisms, accumulate quickly on MHK devices, causing mechanical wear and changes in performance. Biofouling on crucial components of hydrokinetic devices, such as rotors, generators, and turbines, imposes substantial mass and hydrodynamic loading with associated efficiency loss and maintenance costs. Most antifouling coatings leach toxic ingredients, such as copper and tributyltin, through an eroding process, but increasingly stringent regulation of biocides has led to interest in the development of non-biocidal technologies to control fouling. Semprus Biosciences research team is developing modifications to prevent fouling from a broad spectrum of organisms on devices of all shapes, sizes, and materials for the life of the product. The research team designed and developed betaine-based polymers as novel underwater coatings to resist the attachment of marine organisms. Different betaine-based monomers and polymers were synthesized and incorporated within various coating formulations. The formulations and application methods were developed on aluminum panels with required adhesion strength and mechanical properties. The coating polymers were chemically stable under UV, hydrolytic and oxidative environments. The sulfobetaine formulations are applicable as nonleaching and stable underwater coatings. For the first time, coating formulations modified with highly packed sulfobetaine polymers were prepared and demonstrated resistance to a broad spectrum of marine organisms. Assays for comparing nonfouling performance were developed to evaluate protein adsorption and bacteria attachment. Barnacle settlement and removal were evaluated and a 60-day field test was performed. Silicone substrates including a commercial fouling release coating were used for comparison. Compared with the unmodified silicone substrates, the sulfobetaine-modified formulations were able to exhibit a 98% reduction in fibrinogen adsorption, 97.0% (E. coli), 99.6% (S. aureus), and 99.5% (C. lytica) reduction in bacteria attachment, and 100% reduction in barnacles cyprid attachment. In addition to the significant improvement in fouling resistance of various organisms, the 60-day field test also showed an evident efficacy from visual assessment, foul rating, and fouling removal test. The research confirmed that the novel antifouling mechanism of betaine polymers provides a new avenue for marine coating development. The developed coatings out-performed currently used nontoxic underwater coatings in a broad spectrum of fouling resistance. By further developing formulations and processing methods for specific devices, the technology is ready for the next stage of development with demonstration in MHK systems.

16 TIDAL AND WAVE POWER↗
DOE OSTI2013

Pressure Relief Devices for High-Pressure Gaseous Storage Systems: Applicability to Hydrogen Technology

Pressure relief devices (PRDs) are viewed as essential safety measures for high-pressure gas storage and distribution systems. These devices are used to prevent the over-pressurization of gas storage vessels and distribution equipment, except in the application of certain toxic gases. PRDs play a critical role in the implementation of most high-pressure gas storage systems and anyone working with these devices should understand their function so they can be designed, installed, and maintained properly to prevent any potentially dangerous or fatal incidents. As such, the intention of this report is to introduce the reader to the function of the common types of PRDs currently used in industry. Since high-pressure hydrogen gas storage systems are being developed to support the growing hydrogen energy infrastructure, several recent failure incidents, specifically involving hydrogen, will be examined to demonstrate the results and possible mechanisms of a device failure. The applicable codes and standards, developed to minimize the risk of failure for PRDs, will also be reviewed. Finally, because PRDs are a critical component for the development of a successful hydrogen energy infrastructure, important considerations for pressure relief devices applied in a hydrogen gas environment will be explored.

08 HYDROGEN↗
DOE OSTI2024

Fabricated devices for performing bacterial-fungal interaction experiments across scales

Diverse and complex microbiomes are found in virtually every environment on Earth. Bacteria and fungi often co-dominate environmental microbiomes, and there is growing recognition that bacterial-fungal interactions (BFI) have significant impacts on the functioning of their associated microbiomes, environments, and hosts. Investigating BFI in vitro remains a challenge, particularly when attempting to examine interactions at multiple scales of system complexity. Fabricated devices can provide control over both biotic composition and abiotic factors within an experiment to enable the characterization of diverse BFI phenotypes such as modulation of growth rate, production of biomolecules, and alterations to physical movements. Engineered devices ranging from microfluidic chips to simulated rhizosphere systems have been and will continue to be invaluable to BFI research, and it is anticipated that such devices will continue to be developed for diverse applications in the field. This will allow researchers to address specific questions regarding the nature of BFI and how they impact larger microbiome and environmental processes such as biogeochemical cycles, plant productivity, and overall ecosystem resilience. Devices that are currently used for experimental investigations of bacteria, fungi, and BFI are discussed herein along with some of the associated challenges and several recommendations for future device design and applications.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRSDate not supplied

Insertion Loss of a Multi-Plane Light Conversion Device with Few Mode Fiber Outputs Under Atmospheric Conditions

A key challenge of photon counting optical communication is delivering light with atmospherically distorted wavefronts from the telescope to detectors efficiently. When using fiber coupled single photon detectors, the efficiency of the transmittance is constrained by the modes supported by the fiber. The number of modes supported by a fiber depends on the size of the core. The larger the core, the more modes supported. However, commercial off the shelf superconducting nanowire single photon detectors (SNSPDs) are currently limited in area, which limits the core size of the fibers that can efficiently couple to the detectors. To increase the amount of light that can be delivered to the detectors, NASA Glenn Research Center is considering many different fiber/detector architectures. This paper compares insertion loss of the fiber device for two different architectures: • a multi-plane light conversion device to split the light from a 30 µm core diameter fiber into 7 separate, 15 µm core diameter few-mode fibers butt-coupled to 7 single-element SNSPDs, • and a 30 µm core diameter multimode fiber butt-coupled to a 16 multi-element, SNSPD array. The measured insertion loss for each fiber device under emulated atmospheric conditions with D/r0 between 2 and 30 is presented. The multi-plane light conversion device shows a consistent ~1 dB loss more than the multimode fiber. Also presented is the measured uneven power splitting of the multiplane light conversion device, especially at lower D/r0. How this uneven power splitting contributes to system loss called blocking loss is discussed.

Multi-plane light conversion device↗
DOE OSTI2016

Harnessing Structure-Property Relationships for Poly(alkyl thiophene)-Fullerene Derivative Thin Filmsto Optimize Performance in Photovoltaic Devices

Nanoscale bulk heterojunction (BHJ) systems, consisting of fullerenes dispersed in conjugated polymers as the active component, have been actively studied over the last decades in order to produce high performance organic photovoltaics (OPVs). A significant role in device efficiency is played by the active layer morphology, but despite considerable study, a full understanding of the exact role that morphology plays and therefore a definitive method to produce and control an ideal morphology is lacking. In order to understand the BHJ phase behavior and associated morphology in these devices, we have used neutron reflection, together with grazing incidence X-ray and neutron scattering and X-ray photoelectron spectroscopy (XPS) to determine the morphology of the BHJ active layer in functional devices. We have studied nine model BHJ systems based on mixtures of three poly(3-alkyl thiophenes, P3AT) (A=butyl, hexyl, octyl) blended with three different fullerene derivatives, which provides variations in crystallinity and miscibility within the BHJ composite. In studying properties of functional devices, we show a direct correlation between the observed morphology within the BHJ layer and the device performance metrics, i.e., the short-circuit current (J SC ), fill factor (FF), open-circuit voltage (VOC) and overall power conversion efficiency (PCE). Using these model systems, the effect of typical thermal annealing processes on the BHJ morphology through the film thickness as a function of the polythiophene-fullerene mixtures and different electron transport layer interfaces has been determined. It is shown that fullerene enrichment occurs at both the electrode interfaces after annealing. The degree of fullerene enrichment is found to strongly correlate with J SC and to a lesser degree with FF. Finally, based on these findings we demonstrate that by deliberately adding a fullerene layer at the electron transport layer interface, J SC can be increased by up to 20%, resulting in an overall increase in PCE of 5%.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Flexible Thermoelectric Devices of Ultrahigh Power Factor by Scalable Printing and Interface Engineering

Printing is a versatile method to transform semiconducting nanoparticle inks into functional and flexible devices. In particular, thermoelectric nanoparticles are attractive building blocks to fabricate flexible devices for energy harvesting and cooling applications. However, the performance of printed devices are plagued by poor interfacial connections between nanoparticles and resulting low carrier mobility. While many rigid bulk materials have shown a thermoelectric figure of merit ZT greater than unity, it is an exacting challenge to develop flexible materials with ZT near unity. Here, a scalable screen-printing method to fabricate high-performance and flexible thermoelectric devices is reported. A tellurium-based nanosolder approach is employed to bridge the interfaces between the BiSbTe particles during the postprinting sintering process. The printed BiSbTe flexible films demonstrate an ultrahigh room-temperature power factor of 3 mW m -1 K -2 and ZT about 1, significantly higher than the best reported values for flexible films. A fully printed thermoelectric generator produces a high power density of 18.8 mW cm -2 achievable with a small temperature gradient of 80 °C. This screen-printing method, which directly transforms thermoelectric nanoparticles into high-performance and flexible devices, presents a significant leap to make thermoelectrics a commercially viable technology for a broad range of energy harvesting and cooling applications.

36 MATERIALS SCIENCE↗