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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38

Thermomagnetic generators for ultra-low-grade marine thermal energy harvesting

Low-grade thermal gradients in marine environments represent an underexploited energy source for autonomous sensing and monitoring. Converting such small temperature differences into usable electrical power remains a key challenge for ocean-deployed systems. We present a deployable thermomagnetic generator thoroughly characterized for marine-relevant energy harvesting. The device powers an internet-connected sensor and harvests ultra-low temperature differences akin to those at the ocean surface. It draws heat from water and rejects it to ambient air, operating optimally at a temperature difference (ΔT) of ~7.5 °C. Laboratory prototypes generated up to 6.7 mW at ΔT ~ 10 °C with gentle airflow (~1 m s -1 ). A separate controlled wave-tank demonstration validated stable operation and sensor powering under marine-like boundary conditions. Given its voltage and power margins, the generator could sustain multiple sensor nodes. Scalability and material assessments identify modular deployment and non-rare-earth alternatives as pathways toward practical marine energy harvesting and low-grade waste-heat recovery.

16 TIDAL AND WAVE POWER↗

Using resonant energy X-ray diffraction to extract chemical order parameters in ternary semiconductors

II–IV–V 2 materials, ternary analogs to III–V materials, are emerging for their potential applications in devices such as LEDs and solar cells. Controlling cation ordering in II–IV–V 2 materials offers the potential to tune properties at nearly fixed compositions and lattice parameters. While tuning properties at a fixed lattice constant through ordering has the potential to be a powerful tool used in device fabrication, cation ordering also creates challenges with characterization and quantification of ordering. In this work, we investigate two different methods to quantify cation ordering in ZnGeP 2 thin films: a stretching parameter calculated from lattice constants , and an order parameter determined from the cation site occupancies ( S ). We use high resolution X-ray diffraction (HRXRD) to determine and resonant energy X-ray diffraction (REXD) to extract S . REXD is critical to distinguish between elements with similar Z -number ( e.g. Zn and Ge). We found that samples with a corresponding to the ordered chalcopyrite structure had only partially ordered S values. The optical absorption onset for these films occurred at lower energy than expected for fully ordered ZnGeP 2 , indicating that S is a more accurate descriptor of cation order than the stretching parameter. Since disorder is complex and can occur on many length scales, metrics for quantifying disorder should be chosen that most accurately reflect the physical properties of interest.

36 MATERIALS SCIENCE↗

The Zintl phases A In 2 As 2 (A = Ca, Sr, Ba): new topological insulators and thermoelectric material candidates

Recently, there has been a lot of interest in topological insulators (TIs), being electronic materials, which are insulating in their bulk but with the gapless exotic metallic state on their surface. The surface states observed in such materials behave as a perfect conductor thereby making them more suited for several cutting-edge technological applications such as spintronic devices. Here, we report the synthesis and structural characterization of the Zintl phases AIn 2 As 2 (A = Ca, Sr, Ba), which could become a new class of TIs. Crystal structure elucidation by single-crystal X-ray diffraction reveals that CaIn 2 As 2 and SrIn 2 As 2 are isostructural and crystallize in the EuIn 2 P 2 structure type (space group P6 3 /mmc, no. 194, Z = 2) with unit cell parameters a = 4.1482(6) Å, c = 17.726(4) Å; and a = 4.2222(6) Å, c = 18.110(3) Å, respectively. Their hexagonal structure is made up of alternating [In 2 As 2 ] 2– layers separated by slabs of A 2+ cations. BaIn 2 As 2 on the other hand crystallizes in the monoclinic EuGa 2 P 2 structure type (space group P2/m, no. 10, Z = 4) with unit cell parameters a = 10.2746(11) Å, b = 4.3005(5) Å, c = 13.3317(14) Å and β = 95.569(2)°. This structure is also layered, and it is made up of different type of polyanionic [In 2 As 2 ] 2– units and Ba 2+ cations. The valence electron count for all three compounds adheres to the Zintl-Klemm formalism, and all elements achieve closed-shell electronic configurations. Bulk electronic structure calculations indicate the opening of a bandgap E g ~ 0.03 eV (CaIn 2 As 2 and Sr 2 In 2 As 2 ), and E g ~0.21 eV (BaIn 2 As 2 ) in the absence of strain and spin–orbit coupling (SOC). Furthermore, these results argue in favor of the realization of a nontrivial topological insulator state under the influence of tensile strain and SOC. Preliminary transport properties on BaIn 2 As 2 are suggestive of a degenerate p-type semiconductor—a behavior which is sought after in thermoelectric (TE) materials. Since both TIs and excellent TE materials are known to favor the same material properties such as narrow bandgap, heavy elements, and strong SOC, these three Zintl phases are also projected as candidates TE materials.

36 MATERIALS SCIENCE↗

Phase-resolved electrical detection of coherently coupled magnonic devices

We demonstrate the electrical detection of magnon-magnon hybrid dynamics in yttrium iron garnet/Permalloy (YIG/Py) thin film bilayer devices. Direct microwave current injection through the conductive Py layer excites the hybrid dynamics consisting of the uniform mode of Py and the first standing spin wave (n=1) mode of YIG, which are coupled via interfacial exchange. Both the two hybrid modes, with Py- or YIG-dominated excitations, can be detected via the spin rectification signals from the conductive Py layer, providing phase resolution of the coupled dynamics. The phase characterization is also applied to a nonlocally excited Py device, revealing the additional phase shift due to the perpendicular Oersted field. Our results provide a device platform for exploring hybrid magnonic dynamics and probing their phases, which are crucial for implementing coherent information processing with magnon excitations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Identification of localized radiation damage in power MOSFETs using EBIC imaging

The rapidly increasing use of electronics in high-radiation environments and the continued evolution in transistor architectures and materials demand improved methods to characterize the potential damaging effects of radiation on device performance. Here, electron-beam-induced current is used to map hot-carrier transport in model metal-oxide semiconductor field-effect transistors irradiated with a 300 KeV focused He + beam as a localized line spanning across the gate and bulk Si. By correlating the damage to the electronic properties and combining these results with simulations, the contribution of spatially localized radiation damage on the device characteristics is obtained. Furthermore, this identified damage, caused by the He + beam, is attributed to localized interfacial P b centers and delocalized positive fixed-charges, as surmised from simulations. Comprehension of the long-term interaction and mobility of radiation-induced damage are key for future design of rad-hard devices.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Sources of error and methods to improve accuracy in interface state density analysis using quasi-static capacitance–voltage measurements in wide bandgap semiconductors

Characterizing interface trap states in commercial wide bandgap devices using frequency-based measurements requires unconventionally high probing frequencies to account for both fast and slow traps associated with wide bandgap materials. The C - ψs technique has been suggested as a viable quasi-static method for determining the interface trap state densities in wide bandgap systems, but the results are shown to be susceptible to errors in the analysis procedure. Here this work explores the primary sources of errors present in the C - ψs technique using an analytical model that describes the apparent response for wide bandgap MOS capacitor devices. Measurement noise is shown to greatly impact the linear fitting routine of the 1/C$^{*2}_s$ vs Ψ s plot to calibrate the additive constant in the surface potential/gate voltage relationship, and an inexact knowledge of the oxide capacitance is also shown to impede interface trap state analysis near the band edge. In addition, a slight nonlinearity that is typically present throughout the 1/C$^{*2}_s$ vs Ψ s plot hinders the accurate estimation of interface trap densities, which is demonstrated for a fabricated n-SiC MOS capacitor device. Methods are suggested to improve quasi-static analysis, including a novel method to determine an approximate integration constant without relying on a linear fitting routine.

42 ENGINEERING↗

Extension of the energetic particle transport kick model in TRANSP to multiple fast ion species

Abstract Alfvénic instabilities (AEs) are well known to cause enhanced transport of energetic particles (EPs) in fusion devices. Most studies until now have focused on characterizing and understanding AE stability in single-species plasmas heated by neutral beams (NB), where deuterium is typically used as both main plasma species and NB fuel. As the fusion community moves toward fusion reactors that target burning plasma conditions, such as ITER, the single-species picture breaks down. Burning plasmas, which will use a mix of deuterium and tritium (DT) as main fuel, also feature the presence of several supra-thermal fusion products such as alpha particles, protons, helium isotopes and high-energy tritium ions. This work presents the extension of the EP transport kick model implemented in the TRANSP time-dependent tokamak transport code to study the combined effect of multiple EP species on AE stability and, in turn, the response of different EP species to plasma instabilities in terms of their redistribution and losses. Further validation of the enhanced model is planned based on experimental results expected from the JET DT campaign scheduled for 2021, in preparation for ITER plasmas and beyond.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

HamPerf: A Hamiltonian-Oriented Approach to Quantum Benchmarking

Quantum computing technologies are undergoing rapid development. The different qubit modalities being considered for quantum computing each have their strengths and weaknesses, making it challenging to compare their performance relative to each other and the state-of-the-art in classical high-performance computing. To better understand the utility of a given quantum processor and to assess when and how it will be able to advance the frontiers of computational science, researchers need a robust approach to quantum benchmarking. A variety of approaches have been proposed, many of which characterize the presence of noise in current quantum devices. These efforts include component-level performance metrics, such as randomized benchmarking and gate set tomography; high-level application-dependent metrics; and devicelevel metrics, such as the Quantum Volume. However, it remains unclear how low-level metrics, such as fidelities and decoherence times, and global device metrics, such as Quantum Volume, relate to the computational utility and practical limitations of quantum processors to solve useful problems. In this paper, we describe our Hamiltonian-oriented approach to quantum benchmarking called HamPerf. Where previous application-dependent approaches specify a suite of benchmarking circuits inspired by applications, we place the problem Hamiltonian at the center. Our strategy allows us to probe the computational performance of a quantum processor on standardized and relevant problem sets, agnostic of the algorithms and hardware used to solve them; it also provides fundamental insights into how device characteristics correlate with computational utility.

Butko, Anastasiia↗

MultiPEM Toolbox

Supports characterization of explosive events by providing estimates of device parameters such as yield, height of burst/depth of burial, geolocation, and event time with uncertainty quantification.

Williams, Brian↗

Electrodynamic Shaker Capability Estimation Through Experimental Dynamic Substructuring [Thesis]

Electrodynamic shaker systems are an essential tool in shock and vibration testing of dynamic environments. However, the specific performance capability of these systems is difficult to characterize. The dynamics of the shaker itself, the device under test and the specific test configuration used all couple to create a dynamic response unique to each test. Poorly predicted limitations in shaker capability affect the ability to achieve test specifications, delay testing schedules, and create difficulties for choosing test equipment. To predict shaker capability for a specific test configuration prior to setup, a lumped parameter model of the shaker system and a modal model of a device under test was developed. These models were then analytically coupled using LaGrange multiplier frequency based substructuring to estimate their coupled frequency response functions. The coupled frequency response functions were used to predict electrical inputs required to meet a given test specification. These input requirements were finally compared to a validation test using the specification and setup. Input requirements estimated using the substructuring estimated frequency response functions showed significant error. However, results using an ideal frequency response function showed very little error. These results indicate that with a better method of experimental dynamic substructuring employed it would be possible to accurately predict shaker capability for a given test configuration prior to setup.

42 ENGINEERING↗

A Systematic Approach for Estimating High-Altitude Electromagnetic Pulse Coupling onto Power Generation Facility Equipment

A systematic approach is presented to evaluate the effects of high-altitude electromagnetic pulse (HEMP) signals on the equipment located inside a power generation facility. The approach uses a combination of practical measurement and simulation efforts to characterize the radio wave propagation behavior and the device immunity profile. Of particular interest in this work was estimating the vulnerability level of equipment that is connected to long cables. As an example application, a detailed study was conducted for one common class of facility equipment, and its frequency- and time-domain HEMP coupling properties were investigated as a function of terminal loading condition and cable attachment configuration. Overall, the proposed method can be generalized and applied to other electronic components and systems found in the facility environment.

42 ENGINEERING↗

Preprocessing for Unintended Conducted Emissions Classification with ResNet

Characterization of Unintended Conducted Emissions (UCE) from electronic devices is important when diagnosing electromagnetic interference, performing nonintrusive load monitoring (NILM) of power systems, and monitoring electronic device health, among other applications. Prior work has demonstrated that UCE analysis can serve as a diagnostic tool for energy efficiency investigations and detailed load analysis. While explaining the feature selection of deep networks with certainty is often not fully comprehensive, or in other applications, quite lacking, additional tools/methods for further corroboration and confirmation can help further the understanding of the researcher. This is true especially in the subject application of the study in this paper. Often the focus of such efforts is the selected features themselves, and there is not as much understanding gained about the noise in the collected data. If selected feature and noise characteristics are known, it can be used to further shape the design of the deep network or associated preprocessing. This is additionally difficult when the available data are limited, as in the case which the authors investigated in this study. Here, the authors present a novel work (which is a proposed complementary portion of the overall solution to the deep network classification explainability problem for this application) by applying a systematic progression of preprocessing and a deep neural network (ResNet architecture) to classify UCE data obtained via current transformers. By using a methodical application of preprocessing techniques prior to a deep classifier, hypotheses can be produced concerning what features the deep network deems important relative to what it perceives as noise. For instance, it is hypothesized in this particular study as a result of execution of the proposed method and periodic inspection of the classifier output that the UCE spectral features are relatively close to each other or to the interferers, as systematically reducing the beta parameter of the Kaiser window produced progressively better classification performance, but only to a point, as going below the Beta of eight produced decreased classifier performance, as well as the hypothesis that further spectral feature resolution was not as important to the classifier as rejection of the leakage from a spectrally distant interference. This can be very important in unpredictable low-FNR applications, where knowing the difference between features and noise is difficult. As a side-benefit, much was learned regarding the best preprocessing to use with the selected deep network for the UCE collected from these low power consumer devices obtained via current transformers. Baseline rectangular windowed FFT preprocessing provided a 62% classification increase versus using raw samples. After performing a more optimal preprocessing, more than 90% classification accuracy was achieved across 18 low-power consumer devices for scenarios in which the in-band features-to-noise ratio (FNR) was very poor.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Bullis, W. M.↗

Surveyor television camera, selected materials and electronic components, Appendix C

The locations of various parts of the Surveyor camera are presented. Tables were prepared with emphasis on: (1) exterior parts and surfaces that are directly exposed to space, (2) parts that shield others from space radiation, (3) representative or unique materials, and (4) electronic devices that may contain unique or well-characterized materials.

Carroll, W. F.↗

Radiation sensitive solid state switch

A mechanically operable solid state switch suited for use in achieving a variable circuit-switching function is described. This switch is characterized by an annular array of photoresponsive switching devices, disposed in communication with an included source of radiation, and a plurality of interchangeable, mechanically operable interrupter disks. Each disk has a predetermined pattern of transparent and opaque portions. Operative displacement of each disk serves to make and break selected electrical circuits through the photo responsive devices of said array.

Hutto, R. J.↗

Thin silicon solar cell performance characteristics

Refined techniques for surface texturizing, back surface field and back surface reflector formation were evaluated for use with shallow junction, single-crystal silicon solar cells. Each process was characterized individually and collectively as a function of device thickness and bulk resistivity. Among the variables measured and reported are open circuit voltage, short circuit current and spectral response. Substantial improvements were obtained by the utilization of a low cost aluminum paste process to simultaneously remove the unwanted n(+) diffused region, form the back surface field and produce an ohmic contact metallization. The highly effective BSF which results from applying this process has allowed fabrication of cells 0.05 mm thick with initial outputs as high as 79.5 mW/4 sq cm (28 C, AM0) and superior electron radiation tolerance. Cells of 0.02 mm to 0.04 mm thickness have been fabricated with power to mass ratios well in excess of 2 watts per gram.

Gay, C. F.↗

NASA preprototype redox storage system for a photovoltaic stand-alone application

A 1 kW preprototype redox storage system underwent characterization tests and was operated as the storage device for a 5 kW (peak) photovoltaic array. The system is described and performance data are presented. Loss mechanisms are discussed and simple design changes leading to significant increases in efficiency are suggested. The effects on system performance of nonequilibrium between the predominant species of complexed chromic ion in the negative electrode reactant solution are indicated.

Hagedorn, N. H.↗

Applications of acoustics in the measurement of coal slab thickness

The determination of the possibility of employing acoustic waves at ultrasonic frequencies for measurements of thicknesses of slabs of coal backed by shale is investigated. Fundamental information concerning the acoustical properties of coal, and the relationship between these properties and the structural and compositional parameters used to characterize coal samples was also sought. The testing device, which utilizes two matched transducers, is described.

Hadden, W. J., Jr.↗