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At least 685 records · Page 38

Prediction and control of transition in hypersonic boundary layers

In this paper, the role of compressible linear stability theory in prediction of boundary layer transition at supersonic and hypersonic speeds is investigated. Computations for sharp cones, using the e exp N method with N = 10, show that the first oblique Tollmien-Schlichting mode is responsible for transition at adiabatic wall conditions for freestream Mach numbers up to 7. For cold walls, the two-dimensional second mode dominates the transition process at lower hypersonic Mach numbers due to the well-known destabilizing effect of cooling on the second mode. It is shown that pressure gradient and suction may be used to stabilize this mode. Some results on the real gas effects on hypersonic boundary-layer stability are presented.

Malik, Mujeeb R.↗

Control of a supersonic reattaching shear layer

A reattaching supersonic shear layer was perturbed by transverse air injection, and the effects were investigated using flow visualization. It was found that shear layer mixing was increased and that the shock system was strongly disturbed due to the heightened three dimensionality of the flow. Mixing enhancement was also achieved in an incompressible downstream-facing step flow using the same blowing procedure.

Poggie, J.↗

Intraply Hybrid Composites Would Contain Control Strips

"Smart" structural components with sensors and/or actuators distributed throughout their volumes made of intraply hybrid composite materials, according to proposal. Strips of hybrid control material interspersed with strips of ordinary (passive) composite material in some layers, providing distributed control capability. For example, near and far edges of plate bent upward by commanding bottom control strips to expand and simultaneously commanding upper control strips to contract.

Chamis, Christos C.↗

Artifacts for Calibration of Submicron Width Measurements

Artifacts that are fabricated with the help of molecular-beam epitaxy (MBE) are undergoing development for use as dimensional calibration standards with submicron widths. Such standards are needed for calibrating instruments (principally, scanning electron microscopes and scanning probe microscopes) for measuring the widths of features in advanced integrated circuits. Dimensional calibration standards fabricated by an older process that involves lithography and etching of trenches in (110) surfaces of single-crystal silicon are generally reproducible to within dimensional tolerances of about 15 nm. It is anticipated that when the artifacts of the present type are fully developed, their critical dimensions will be reproducible to within 1 nm. These artifacts are expected to find increasing use in the semiconductor-device and integrated- circuit industries as the width tolerances on semiconductor devices shrink to a few nanometers during the next few years. Unlike in the older process, one does not rely on lithography and etching to define the critical dimensions. Instead, one relies on the inherent smoothness and flatness of MBE layers deposited under controlled conditions and defines the critical dimensions as the thicknesses of such layers. An artifact of the present type is fabricated in two stages (see figure): In the first stage, a multilayer epitaxial wafer is grown on a very flat substrate. In the second stage, the wafer is cleaved to expose the layers, then the exposed layers are differentially etched (taking advantage of large differences between the etch rates of the different epitaxial layer materials). The resulting structure includes narrow and well-defined trenches and a shelf with thicknesses determined by the thicknesses of the epitaxial layers from which they were etched. Eventually, it should be possible to add a third fabrication stage in which durable, electronically inert artifacts could be replicated in diamondlike carbon from a master made by MBE and etching as described above.

Grunthaner, Frank↗

Materials for controlling the epitaxial growth of photoactive layers in photovoltaic devices

There is disclosed ultrathin film material templating layers that force the morphology of subsequently grown electrically active thin films have been found to increase the performance of small molecule organic photovoltaic (OPV) cells. There is disclosed electron-transporting material, such as hexaazatriphenylene-hexacarbonitrile (HAT-CN) can be used as a templating material that forces donor materials, such as copper phthalocyanine (CuPc) to assume a vertical-standing morphology when deposited onto its surface on an electrode, such as an indium tin oxide (ITO) electrode. It has been shown that for a device with HAT-CN as the templating buffer layer, the fill factor and short circuit current of CuPc:C60 OPVs were both improved compared with cells lacking the HAT-CN template. This is explained by the reduction of the series resistance due to the improved crystallinity of CuPc grown onto the ITO surface.

Forrest, Stephen R.↗

A Numerical Analysis of the Transient Response of an Ablation System Including Effects of Thermal Nonequilibrium, Mass Transfer and Chemical Kinetics

The differential equations governing the transient response of a one-dimensional ablative thermal protection system undergoing stagnation ablation are derived. These equations are for thermal nonequilibrium effects between the pyrolysis gases and the char layer and kinetically controlled chemical reactions and mass transfer between the pyrolysis gases and the char layer. The boundary conditions are written for the particular case of stagnation heating with surface removal by oxidation or sublimation and pyrolysis of the uncharred layer occurring in a plane. The governing equations and boundary conditions are solved numerically using the modified implicit method (Crank-Nicolson method). Numerical results are compared with exact solutions for a number of simplified cases. The comparison is favorable in each instance.

Clark, R. K.↗

Total immersion crystal growth

Crystals of wide band gap materials are produced by positioning a holder receiving a seed crystal at the interface between a body of molten wide band gap material and an overlying layer of temperature-controlled, encapsulating liquid. The temperature of the layer decreases from the crystallization temperature of the crystal at the interface with the melt to a substantially lower temperature at which formation of crystal defects does not occur, suitably a temperature of 200 to 600 C. After initiation of crystal growth, the leading edge of the crystal is pulled through the layer until the leading edge of the crystal enters the ambient gas headspace which may also be temperature controlled. The length of the column of liquid encapsulant may exceed the length of the crystal such that the leading edge and trailing edge of the crystal are both simultaneously with the column of the crystal. The crystal can be pulled vertically by means of a pulling-rotation assembly or horizontally by means of a low-angle withdrawal mechanism.

Morrison, Andrew D.↗

Thermal Expert System (TEXSYS): Systems automony demonstration project, volume 1. Overview

The Systems Autonomy Demonstration Project (SADP) produced a knowledge-based real-time control system for control and fault detection, isolation, and recovery (FDIR) of a prototype two-phase Space Station Freedom external active thermal control system (EATCS). The Thermal Expert System (TEXSYS) was demonstrated in recent tests to be capable of reliable fault anticipation and detection, as well as ordinary control of the thermal bus. Performance requirements were addressed by adopting a hierarchical symbolic control approach-layering model-based expert system software on a conventional, numerical data acquisition and control system. The model-based reasoning capabilities of TEXSYS were shown to be advantageous over typical rule-based expert systems, particularly for detection of unforeseen faults and sensor failures. Volume 1 gives a project overview and testing highlights. Volume 2 provides detail on the EATCS test bed, test operations, and online test results. Appendix A is a test archive, while Appendix B is a compendium of design and user manuals for the TEXSYS software.

Glass, B. J.↗

Thermal Expert System (TEXSYS): Systems autonomy demonstration project, volume 2. Results

The Systems Autonomy Demonstration Project (SADP) produced a knowledge-based real-time control system for control and fault detection, isolation, and recovery (FDIR) of a prototype two-phase Space Station Freedom external active thermal control system (EATCS). The Thermal Expert System (TEXSYS) was demonstrated in recent tests to be capable of reliable fault anticipation and detection, as well as ordinary control of the thermal bus. Performance requirements were addressed by adopting a hierarchical symbolic control approach-layering model-based expert system software on a conventional, numerical data acquisition and control system. The model-based reasoning capabilities of TEXSYS were shown to be advantageous over typical rule-based expert systems, particularly for detection of unforeseen faults and sensor failures. Volume 1 gives a project overview and testing highlights. Volume 2 provides detail on the EATCS testbed, test operations, and online test results. Appendix A is a test archive, while Appendix B is a compendium of design and user manuals for the TEXSYS software.

Glass, B. J.↗

Layer-resolved magnetic proximity effect in van der Waals heterostructures

Magnetic proximity effects are integral to manipulating spintronic, superconducting, excitonic and topological phenomena in heterostructures. These effects are highly sensitive to the interfacial electronic properties, such as electron wavefunction overlap and band alignment. The recent emergence of magnetic two-dimensional materials opens new possibilities for exploring proximity effects in van der Waals heterostructures. In particular, atomically thin CrI 3 exhibits layered antiferromagnetism, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. In this paper, we report a layer-resolved magnetic proximity effect in heterostructures formed by monolayer WSe 2 and bi/trilayer CrI 3 . By controlling the individual layer magnetization in CrI 3 with a magnetic field, we show that the spin-dependent charge transfer between WSe 2 and CrI 3 is dominated by the interfacial CrI 3 layer, while the proximity exchange field is highly sensitive to the layered magnetic structure as a whole. In combination with reflective magnetic circular dichroism measurements, these properties allow the use of monolayer WSe 2 as a spatially sensitive magnetic sensor to map out layered antiferromagnetic domain structures at zero magnetic field as well as antiferromagnetic/ferromagnetic domains at finite magnetic fields. Our work reveals a way to control proximity effects and probe interfacial magnetic order via van der Waals engineering.

36 MATERIALS SCIENCE↗

An Integrated MEMS Sensor Cluster System for Aerospace Applications

Efforts to reduce viscous drag on airfoils could results in a considerable saving for the operation of flight vehicles including those of space transportation. This reduction of viscous drag effort requires measurement and active control of boundary layer flow property on an airfoil. Measurement of viscous drag of the boundary layer flow over an airfoil with minimal flow disturbance is achievable with newly developed MEMS sensor clusters. These sensor clusters provide information that can be used to actively control actuators to obtain desired flow properties or design a vehicle to satisfy particular boundary layer flow criteria. A series of MEMS sensor clusters has been developed with a data acquisition and control module for local measurements of shear stress, pressure, and temperature on an airfoil. The sensor cluster consists of two shear stress sensors, two pressure sensors, and two temperature sensors on a surface area of 1.24 mm x 1.86 mm. Each sensor is 300 microns square and is placed on a flexible polyimide sheet. The shear stress sensor is a polysilicon hot-film resistor, which is insulated by a vacuum cavity of 200 x 200 x 2 microns. The pressure sensors are silicon piezoresistive type, and the temperature sensors are also hot film polysilicon resistors. The total size of the cluster including sensors and electrical leads is 1 Omm x 1 Omm x 0.1 mm. A typical sensitivity of shear stress sensor is 150 mV/Pascal, the pressure sensors are an absolute type with a measurement range from 9 to 36 psia with 0.8mV/V/psi sensitivity, and the temperature sensors have a measurement resolution of 0.1 degree C. The sensor clusters are interfaced to a data acquisition and control module that consists of two custom ASICs (Application Specific Integrated Circuits) and a micro-controller. The data acquisition and control module transfers data to a host PC that configures and controls a total of three sensor clusters. Functionality of the entire system has been tested in the laboratory, and preliminary test results are presented.

Kahng, Seun↗

A model of the evaporation of binary-fuel clusters of drops

A formulation has been developed to describe the evaporation of dense or dilute clusters of binary-fuel drops. The binary fuel is assumed to be made of a solute and a solvent whose volatility is much lower than that of the solute. Convective flow effects, inducing a circulatory motion inside the drops, are taken into account, as well as turbulence external to the cluster volume. Results obtained with this model show that, similar to the conclusions for single isolated drops, the evaporation of the volatile is controlled by liquid mass diffusion when the cluster is dilute. In contrast, when the cluster is dense, the evaporation of the volatile is controlled by surface layer stripping, that is, by the regression rate of the drop, which is in fact controlled by the evaporation rate of the solvent. These conclusions are in agreement with existing experimental observations. Parametric studies show that these conclusions remain valid with changes in ambient temperature, initial slip velocity between drops and gas, initial drop size, initial cluster size, initial liquid mass fraction of the solute, and various combinations of solvent and solute. The implications of these results for computationally intensive combustor calculations are discussed.

Harstad, K.↗

Adapting End Host Congestion Control for Mobility

Network layer mobility allows transport protocols to maintain connection state, despite changes in a node's physical location and point of network connectivity. However, some congestion-controlled transport protocols are not designed to deal with these rapid and potentially significant path changes. In this paper we demonstrate several distinct problems that mobility-induced path changes can create for TCP performance. Our premise is that mobility events indicate path changes that require re-initialization of congestion control state at both connection end points. We present the application of this idea to TCP in the form of a simple solution (the Lightweight Mobility Detection and Response algorithm, that has been proposed in the IETF), and examine its effectiveness. In general, we find that the deficiencies presented are both relatively easily and painlessly fixed using this solution. We also find that this solution has the counter-intuitive property of being both more friendly to competing traffic, and simultaneously more aggressive in utilizing newly available capacity than unmodified TCP.

Eddy, Wesley M.↗

Simultaneous Multiple-Location Separation Control

A method of controlling a shear layer for a fluid dynamic body introduces first periodic disturbances into the fluid medium at a first flow separation location. Simultaneously, second periodic disturbances are introduced into the fluid medium at a second flow separation location. A phase difference between the first and second periodic disturbances is adjusted to control flow separation of the shear layer as the fluid medium moves over the fluid dynamic body.

Greenblatt, David↗

Spatial BCS-BEC crossover in superconducting $\textit{p–n}$ junctions

Here, we present a theory of superconducting $\textit{p–n}$ junctions. To this end, we consider a two band model of doped bulk semiconductors with attractive interactions between the charge carriers and derive the superconducting order parameter, the quasiparticle density of states, and the chemical potential as a function of the semiconductor gap $Δ_0$ and the doping level ε. We verify previous results for the quantum phase diagram for a system with constant density of states in the conduction and valence band, which show BCS-superconductor to Bose-Einstein-condensation (BEC) and BEC-to-insulator transitions as a function of doping level and the size of the band gap. Then, we extend this formalism to a density of states which is more realistic for 3D systems and derive the corresponding quantum phase diagram, where we find that a BEC phase can only exist for small band gaps $Δ_0 < Δ ^{\ast}_0$. For larger band gaps, we find rather a direct transition from an insulator to a BCS phase. Next, we apply this theory to study the properties of superconducting $\textit{p–n}$ junctions. We derive the spatial variation of the superconducting order parameter along the $\textit{p–n}$ junction. As the potential difference across the junction leads to energy band bending, we find a spatial crossover between a BCS and BEC condensate, as the density of charge carriers changes across the $\textit{p–n}$ junction. For the two-dimensional system, we find two possible regimes, when the bulk is in a BCS phase, a BCS-BEC-BCS junction with a single BEC layer in the space charge region, and a BCS-BEC-I-BEC-BCS junction with two layers of BEC condensates separated by an insulating layer. In three dimensions we find that there can also be a conventional BCS-I-BCS junction for semiconductors with band gaps exceeding $Δ^{\ast}_0$. Thus, we find that there can be BEC layers in the well controlled setting of doped semiconductors, where the doping level can be varied to change and control the thickness of BEC and insulator layers, making Bose-Einstein condensates thereby possibly accessible to experimental transport and optical studies in solid-state materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Small Molecule Inhibitor-Modulated Al 2 O 3 Atomic Layer Deposition on Monolayer MoS 2 for Controlled Nucleation

The integration of ultrathin dielectrics on two-dimensional (2D) semiconductors is essential for advancing beyond-Si electronics. However, the intrinsic inertness of van der Waals 2D basal planes remains a primary bottleneck to achieving uniform dielectric nucleation and growth. Here, in this study, we introduce a small molecule inhibitor (SMI)-modulated thermal atomic layer deposition (ALD) strategy, exemplified by aluminum oxide (Al 2 O 3 ) ALD on monolayer molybdenum disulfide (1L MoS 2 ) with acetic acid (HAc) SMI. The ABC-type sequence comprises HAc inhibitor (A), trimethylaluminum (TMA) precursor (B), and deionized H 2 O coreactant (C). In situ quartz crystal microbalance (QCM) studies reveal robust HAc adsorption on Al 2 O 3 and suppression of subsequent oxide growth on HAc-passivated surfaces. When applied to 1L MoS 2 , this inhibitory pathway enables HAc to selectively passivate nascent Al 2 O 3 nuclei formed on the MoS 2 surface, limiting their three-dimensional (3D) island coarsening and redirecting precursor adsorption toward the uncovered basal plane. Consequently, nearly continuous ultrathin (∼1.5 nm) Al 2 O 3 films are achieved on 1L MoS 2 with markedly improved uniformity compared to standard Al 2 O 3 ALD using TMA and H 2 O, as validated by atomic force microscopy (AFM), cross-sectional scanning transmission electron microscopy (STEM), and energy-dispersive X-ray spectroscopy (EDS). Density functional theory (DFT) calculations further provide atomistic insight into HAc-modulated Al 2 O 3 nucleation, corroborating the energetic preference of HAc for Al 2 O 3 over MoS 2 and attenuated TMA adsorption on HAc-passivated surfaces. Spatially resolved Raman spectroscopy also confirms that the HAc-modulated process preserves the structural integrity of 1L MoS 2 , with only minimal strain and doping perturbations observed after dielectric deposition. This SMI-modulated approach offers a broadly applicable framework for controlling ALD nucleation across various inhibitors, ALD chemistries, and 2D materials, opening opportunities for reliable dielectric integration in next-generation nanoelectronics.

36 MATERIALS SCIENCE↗

Wind tunnel study on the effects of acoustical disturbances on controlled laminar flow

An exploratory study was conducted to investigate the sensitivity of laminar flow controlled (LFC) boundary layers to external acoustical disturbances using an 8-ft span, 20-ft chord, and 30-deg swept wing section with laminar flow control through spanwise slots. The objectives were to identify Tollmien-Schlichting and other amplification frequencies, critical disturbance levels in the boundary layer, the influence of suction rate on these disturbances, and the transfer function between an external sound field and the corresponding disturbance induced in the boundary layer.

Mangiarotty, R. A.↗