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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Open Circuit Potential of a Au Catalyst during Selective Oxidation of Glycerol

It has been of great interest to understand relationships between the potential of a metal catalyst and its thermochemical catalytic activity, especially in an aqueous phase environment. In the literature, there are correlations of open circuit potential with reaction rates or surface concentrations of reaction intermediates. In this study, we measured the open circuit potential (OCP) of a Au gauze during selective oxidation of glycerol to glyceric acid and hydrogen peroxide in a basic solution, as a function of hydroxide and alcoholate concentrations. It is found that applying a potential to the Au catalyst has no influence on the reaction rate. Although a rough correlation appears to exist between OCP and reaction rate, the data are better fit to an equation which assumes that the potential of the metal (i.e. the OCP) is in equilibrium with the electrochemical potential of the solution, which is defined by the thermodynamic activities of the oxidizing and reducing species. The equation: OCP = constant + Σ ox [(RT/FZ ox )ln[Ox]] - Σ red [(RT/FZ red )ln[Red]] implicitly assumes that the Au metal functions as a probing electrode. It is further found that this equation also applies to the Au-catalyzed H 2 O 2 oxidation/decomposition reaction in a basic medium, and possibly to formic acid dehydrogenation. Here, we postulate that the apparent correlation between OCP and reaction rate is due to the fact that the reaction rate is proportional to the concentrations of the reaction products and/or reactants that define the electrochemical potential of the solution.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Photoelectrode Durability in Two- versus Three-Electrode Configurations: Understanding the Impact of Circuit Configuration on Water-Splitting Stability

Device durability remains a significant challenge in photoelectrochemical (PEC) water splitting under ambient conditions. Yet, a lack of understanding of the test configuration and applied bias effects continue to hinder progress. In this study, we differentiate two-electrode (2E) and three-electrode (3E) configurations for evaluating PEC material durability, focusing particularly on their impacts on photoabsorber solid-state operating conditions. Our results underscore the fallacy of inferring 2E device stability from durability measurements performed solely in 3E configurations. Unmeasured and often misunderstood total circuit bias in 3E tests moderates material degradation, leading to the overestimation of photoelectrode stability compared to short-circuit operation. We demonstrate how the photoabsorber's operating voltage critically governs charge separation, surface stability, and degradation mechanisms during PEC operation. With these findings, we propose a standardized framework for conducting more reliable 3E durability experiments that simulate unassisted performance to help accelerate the development of robust, stable materials for solar-driven water splitting.

08 HYDROGEN↗
DOE OSTI2024

Effects of open circuit immersion and vertex potential on potentiodynamic polarization scans of metallic biomaterials

Abstract Electrodes made of commercially pure titanium (CP-Ti) and a CoCrMo alloy are immersed at an open circuit in a phosphate buffer saline electrolyte at room temperature for different durations prior to electrochemical analyses. Open circuit potential measurements, electrochemical impedance spectroscopy measurements, and cyclic potentiodynamic polarization (CPP) scans are used to assess the impact of the immersion time on derived property values. Stable passivation layers formed on both materials during immersion. The corrosion potentials determined from the anodic legs of CPP scans become more cathodic, and the corrosion currents decrease to lower values after longer immersion times. Measured currents indicate the layers formed on CP-Ti stabilize during forward anodic scans and persist to the vertex potential, whereas passivation breakdown occurs during anodic scans with CoCrMo with active corrosion at voltages up to the vertex potential. The characteristics of the return cathodic legs of CPP scans represent the surface conditions at the vertex potential: characteristic corrosion property values derived from the test responses represent passive surfaces on CP-Ti and leached surfaces on CoCrMo rather than intrinsic properties of those materials.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Evaporated tellurium thin films for p-type field-effect transistors and circuits

There is an emerging need for semiconductors that can be processed at near ambient temperature with high mobility and device performance. Although multiple n-type options have been identified, the development of their p-type counterparts remains limited. In this paper, we report the realization of tellurium thin films through thermal evaporation at cryogenic temperatures for fabrication of high-performance wafer-scale p-type field-effect transistors. We achieve an effective hole mobility of ~35 cm 2 V –1 s –1 , on/off current ratio of ~10 4 and subthreshold swing of 108 mV dec –1 on an 8-nm-thick film. High-performance tellurium p-type field-effect transistors are fabricated on a wide range of substrates including glass and plastic, further demonstrating the broad applicability of this material. Significantly, three-dimensional circuits are demonstrated by integrating multi-layered transistors on a single chip using sequential lithography, deposition and lift-off processes. Finally, various functional logic gates and circuits are demonstrated.

42 ENGINEERING↗
DOE OSTI2021

High-speed programmable photonic circuits in a cryogenically compatible, visible–near-infrared 200 mm CMOS architecture

Abstract Recent advances in photonic integrated circuits have enabled a new generation of programmable Mach–Zehnder meshes (MZMs) realized by using cascaded Mach–Zehnder interferometers capable of universal linear-optical transformations on N input/output optical modes. MZMs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, MZM implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here we introduce a large-scale MZM platform made in a 200 mm complementary metal–oxide–semiconductor foundry, which uses aluminium nitride piezo-optomechanical actuators coupled to silicon nitride waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible–near-infrared wavelengths. Moreover, the vanishingly low hold-power consumption of the piezo-actuators enables these photonic integrated circuits to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Mitigating coherent loss in superconducting circuits using molecular self-assembled monolayers

In planar superconducting circuits, decoherence due to materials imperfections, especially two-level-system (TLS) defects at different interfaces, is a primary hurdle for advancing quantum computing and sensing applications. Traditional methods for mitigating TLS loss, such as etching oxide layers at metal and substrate interfaces, have proven to be inadequate due to the persistent challenge of oxide regrowth. In this work, we introduce a novel approach that employs molecular self-assembled monolayers (SAMs) to chemically bind at different interfaces of superconducting circuits. This technique is specifically tested here on coplanar waveguide (CPW) resonators, in which this method not only impedes oxide regrowth after surface etching but can also tailors the dielectric properties at different resonators interfaces. The deployment of SAMs results in a consistent improvement in the measured quality factors across multiple resonators, surpassing those with only oxide-etched resonators. The efficiency of our approach is supported by microwave measurements of multiple devices conducted at millikelvin temperatures and correlated with detailed X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) characterizations of SAM-passivated resonators. The compatibility of SAMs materials with the established fabrication techniques offers a promising route to improve the performance of superconducting quantum devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Delay-resolved spectroscopy in terahertz photonic circuits

Photonic integrated circuits incorporating intersubband transitions are ideal for mid-infrared and terahertz nanophotonics. However, the design of epitaxies has long been inhibited by two factors: the modest predictivity of ab initio theory and the absence of absolute intersubband gain and loss measurements under operating conditions. Existing measurements either yield inaccurate gain profiles or do not accurately assess dependence on frequency, bias, and temperature. Here, we present a delay-resolved absolute-referencing method for accurate gain evaluation without these limitations, addressing a long-standing challenge. By creating a photonic circuit that allows broadband pulses to traverse different lengths of a gain medium, we measure the absolute transmission of intersubband structures. Gain profiles match theoretical predictions at lower temperatures, with gain and dispersion clamping after lasing, and faster-than-expected degradation occurs at higher temperatures. Our approach provides a precise experimental evaluation of temperature-dependent gain performance and gives insight into optimizing temperature performance and frequency comb designs.

Optical spectroscopy↗
DOE OSTI2023

A feasible path for the use of ferromagnetic josephson junctions in quantum circuits: The ferro-transmon

We discuss the capabilities of ferromagnetic (F) Josephson junctions (JJs) in a variety of layouts and configurations. The main goal is to demonstrate the potential of these hybrid JJs to disclose new physics and the possibility to integrate them in superconducting classical and quantum electronics for various applications. The feasible path towards the use of ferromagnetic Josephson junctions in quantum circuits starts from experiments demonstrating macroscopic quantum tunneling in NbN/GdN/NbN junctions with ferro-insulator barriers and with triplet components of the supercurrent, supported by a self-consistent electrodynamic characterization as a function of the barrier thickness. This has inspired further studies on tunnel ferromagnetic junctions with a different layout and promoted the first generation of ferromagnetic Al-based JJs, specifically Al/AlO x /Al/Py/Al. This layout takes advantage of the capability to integrate the ferromagnetic layer in the junction without affecting the quality of the superconducting electrodes and of the tunnel barrier. The high quality of the devices paves the way for the possible implementation of Al tunnel-ferromagnetic JJs in superconducting quantum circuits. These achievements have promoted the notion of a novel type of qubit incorporating ferromagnetic JJs. This qubit is based on a transmon design featuring a tunnel JJ in parallel with a ferromagnetic JJ inside a SQUID loop capacitively coupled to a superconducting readout resonator. In conclusion, the effect of an external RF field on the magnetic switching processes of ferromagnetic JJs has been also investigated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Hybrid magnonics: Physics, circuits, and applications for coherent information processing

Hybrid dynamic systems have recently gained interest with respect to both fundamental physics and device applications, particularly with their potential for coherent information processing. In this work, we will focus on the recent rapid developments of magnon-based hybrid systems, which seek to combine magnonic excitations with diverse excitations for transformative applications in devices, circuits, and information processing. Key to their promising potentials is that magnons are highly tunable excitations and can be easily engineered to couple with various dynamic media and platforms. The capability of reaching strong coupling with many different excitations has positioned magnons well for studying solid-state coherent dynamics and exploiting unique functionality. In addition, with their gigahertz frequency bandwidth and the ease of fabrication and miniaturization, magnonic devices and systems can be conveniently integrated into microwave circuits for mimicking a broad range of device concepts that have been applied in microwave electronics, photonics, and quantum information. We will discuss a few potential directions for advancing magnon hybrid systems, including on-chip geometry, novel coherent magnonic functionality, and coherent transduction between different platforms. As a future outlook, we will discuss the opportunities and challenges of magnonic hybrid systems for their applications in quantum information and magnonic logic.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Domain wall-magnetic tunnel junction spin–orbit torque devices and circuits for in-memory computing

There are pressing problems with traditional computing, especially for accomplishing data-intensive and real-time tasks, that motivate the development of in-memory computing devices to both store information and perform computation. Magnetic tunnel junction memory elements can be used for computation by manipulating a domain wall, a transition region between magnetic domains, but the experimental study of such devices has been limited by high current densities and low tunnel magnetoresistance. Here, we study prototypes of three-terminal domain wall-magnetic tunnel junction in-memory computing devices that can address data processing bottlenecks and resolve these challenges by using perpendicular magnetic anisotropy, spin–orbit torque switching, and an optimized lithography process to produce average device tunnel magnetoresistance TMR = 171% and average resistance-area product RA = 29 Ω μm2, close to the RA of the unpatterned film. Device initialization variation in switching voltage is shown to be curtailed to 7%–10% by controlling the domain wall initial position, which we show corresponds to 90%–96% accuracy in a domain wall-magnetic tunnel junction full adder simulation. Repeatability of writing and resetting the device is shown. A circuit shows an inverter operation between two devices, showing that a voltage window is large enough, compared to the variation noise, to repeatably operate a domain wall-magnetic tunnel junction circuit. These results make strides in using magnetic tunnel junctions and domain walls for in-memory and neuromorphic computing applications.

Alamdar, Mahshid (ORCID:0000000221732935)↗
DOE OSTI2021

Design of microwave broadband CMOS transmitter and receiver circuits for MIR and ECEI plasma diagnostics

To efficiently determine the plasma electron density fluctuations using the MIR diagnostic technique, a 55–75 GHz 65 nm-CMOS transmitter has been developed where four separate intermediate frequency (IF) signals are up-converted, amplified, and then combined to generate an 8-tone RF output; a broadband 90 nm-CMOS receiver has also been constructed, which consists of an RF-low noise amplifier (LNA), mixer, and IF amplifier. The circuits and their corresponding modules will soon be deployed on the DIII-D and NSTX-U fusion devices. A 110–140 GHz 65 nm-CMOS receiver has also been designed, which is suitable for measuring the deep-core temperature fluctuations in the DIII-D tokamak using the electron cyclotron emission imaging diagnostic system. In addition to the RF-LNA/balun, mixer, and IF amplifier, an LO balun/tripler and driving amplifier are now included in this highly integrated circuit chip. By adopting the microwave and millimeterwave system-on-chip concept in the front-end system design, this paper demonstrates that compact transmitter and receiver modules can be easily built, which, in turn, facilitates array implementation and maintenance.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits

The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches.

Physics↗
DOE OSTI2024

When in-memory computing meets spiking neural networks—A perspective on device-circuit-system-and-algorithm co-design

This review explores the intersection of bio-plausible artificial intelligence in the form of spiking neural networks (SNNs) with the analog in-memory computing (IMC) domain, highlighting their collective potential for low-power edge computing environments. Through detailed investigation at the device, circuit, and system levels, we highlight the pivotal synergies between SNNs and IMC architectures. Additionally, we emphasize the critical need for comprehensive system-level analyses, considering the inter-dependencies among algorithms, devices, circuit, and system parameters, crucial for optimal performance. An in-depth analysis leads to the identification of key system-level bottlenecks arising from device limitations, which can be addressed using SNN-specific algorithm–hardware co-design techniques. This review underscores the imperative for holistic device to system design-space co-exploration, highlighting the critical aspects of hardware and algorithm research endeavors for low-power neuromorphic solutions.

Physics↗
DOE OSTI2025

Correcting impedance measurements for background parasitics to characterize circuit components in cryogenic environments

Predictable circuit response is a critical prerequisite for accurate electronic measurements. Here, we describe a powerful yet straightforward experimental method and analysis model that utilizes an affordable LCR meter in conjunction with an in situ parasitic-impedance background-correction procedure to measure the temperature-dependent impedance (magnitude and phase) of up to ten individual passive circuit elements in a single cryostat run. We show how the model unambiguously identified a ∼20× drop in capacitance for 22 μF 5XR multilayer ceramic capacitors cooled from 300 K to 360 mK in an environment with a parasitic capacitance of ∼300 pF. The same experimental procedure, based on a simple two-wire measurement, was also used to measure 10 and 22 pF thin-film capacitors and 100 MΩ thick-film resistors. The results showed that the resistor values increased by up to an order of magnitude when the devices were cooled from 300 K to 360 mK. Most importantly, we showed that the simple data-acquisition method, coupled with our analysis model, enabled the measurement of component parasitics, and effectively extended the accuracy of a commercial LCR meter beyond its manufacturer-guaranteed values for a wide range of measurement frequencies. We also showed that, in the current configuration, our simple approach is limited to a capacitance accuracy of ∼10 pF.

Carpenter, R. J. [Santa Clara Univ., Santa Clara, ↗
DOE OSTI2025

Behavioral resilience via dynamic circuit firing homeostasis

Homeostatic regulation ensures stable neural circuit output under changing conditions. We find that in Drosophila larvae, either presynaptic weakening due to perturbation of transmitter release or postsynaptic weakening due to perturbation of glutamate receptors at synapses between motor neuron (MN) and muscle has little impact on locomotion, suggesting a nonsynaptic compensatory mechanism. In vivo imaging shows that five different forms of synaptic weakening increase the duration of activity bouts in type I MNs. Strikingly, this compensation is input selective: occurring only in the tonic type Ib MN, not the phasic type Is MN that innervates the same muscle. Moreover, an inhibitory class of central pre-MNs that innervates the tonic—but not phasic—input decreases in activity. The adjustment in activity occurs remarkably quickly: within minutes of synapse perturbation. We propose that MN firing is dynamically regulated by two coordinated mechanisms: a cell-autonomous adjustment of MN excitability and a circuit adjustment of inhibitory central drive. The input selectivity of this process suggests homeostatic adjustment to maintain tonic drive but hold constant the phasic drive that organizes locomotory wave patterns.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2024

Low cost switching circuit for van der Pauw resistivity and Hall measurements at various temperatures

The electrical characterization of materials, particularly superconductors, semiconductors, and those undergoing metal-insulator transitions (MITs), relies significantly on resistivity and Hall measurements as a function of temperature. The van der Pauw four-point probe method is commonly used for such measurements, which involves resistance measurements for different circuit configurations connected to sample contacts. However, repeating these measurements at different temperatures is challenging and time consuming. Here, this study introduces a novel approach utilizing a switching circuit controlled by an Arduino device and a LabVIEW program to automate resistance measurements for different electrical configurations. The effectiveness of this setup was demonstrated by testing V 2 O 3 thin film samples deposited on Al 2 O 3 (001) substrates using DC magnetron sputtering. The MIT temperature of the sample was 115 K during heating and 100 K during cooling. The sample exhibited p-type charge carriers with a Hall coefficient of 1.3 ± 0.1 x 10 -4 cm 3 /C and Hall mobility of 1.7 x 10 -1 cm 2 /V∙s, which is consistent with findings from other studies employing commercial equipment.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Improving wafer-scale Josephson junction resistance variation in superconducting quantum coherent circuits

Quantum bits, or qubits, are an example of coherent circuits envisioned for next-generation computers and detectors. A robust superconducting qubit with a coherent lifetime of O (100 µs) is the transmon: a Josephson junction functioning as a non-linear inductor shunted with a capacitor to form an anharmonic oscillator. In a complex device with many such transmons, precise control over each qubit frequency is often required, and thus variations of the junction area and tunnel barrier thickness must be sufficiently minimized to achieve optimal performance while avoiding spectral overlap between neighboring circuits. Simply transplanting our recipe optimized for single, stand-alone devices to wafer-scale (producing 64, 1x1 cm dies from a 150 mm wafer) initially resulted in global drifts in room-temperature tunneling resistance of ± 30%. Inferring a critical current variation from this resistance distribution, we present an optimized process developed from a systematic 38 wafer study that results in < 3.5% relative standard deviation (RSD) in critical current ( ) for 3000 Josephson junctions (both single-junctions and asymmetric SQUIDs) across an area of 49 cm 2 . Looking within a 1x1 cm moving window across the substrate gives an estimate of the variation characteristic of a given qubit chip. Our best process, utilizing ultrasonically assisted development, uniform ashing, and dynamic oxidation has shown = 1.8% within 1x1 cm, on average, with a few 1x1 cm areas having < 1.0% (equivalent to < 0.5%). Such stability would drastically improve the yield of multi-junction chips with strict critical current requirements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Connection between classical and quantum descriptions of spin waves using quantum circuits

A quantum computing circuit is presented that approximates a single spin wave quantum on a linear chain of spin 1/2 particles described by a Heisenberg Hamiltonian. The circuit is a product state where each qubit represents a spin. The spin wave motion is represented by opening the cone angle using Y rotations and then adding progressive Z rotations along the chain to represent wave propagation. We show analytically that this product state yields the correct dispersion relation in the limit of an unbounded chain. This observation is confirmed using both a simulator and various quantum processors. The use of the quantum computing paradigm in this case does not lead to a computational advantage, but rather leads to a novel conceptual connection between classical and quantum descriptions of spin waves, and may also be useful for characterizing the error in quantum processors.

magnons↗