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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Simple Hybrid Sea Ice Nudging Method for Improving Control Over Partitioning of Sea Ice Concentration and Thickness

Abstract To assess the effect of ocean‐atmosphere coupling in the climate response to forced sea ice loss, the Polar Amplification Model Intercomparison Project protocol includes centennial coupled atmosphere‐ocean general circulation model simulations with imposed sea ice loss. The protocol, which specifies sea ice concentration and thickness distribution targets, does not prescribe a method for achieving them. Although different methods for imposing sea ice loss (or growth) in models have been documented, testing of the method‐dependence of the resulting climate responses has been limited. Achieving the targeted sea ice state has proven to be challenging using the so‐called ghost‐flux nudging method, which induces ice melt from below, as this method does not constrain the partitioning between thickness and concentration. We propose, describe and test a simple method that combines the advantages of direct sea ice nudging and ghost‐flux nudging. The hybrid nudging method better captures the partitioning between thickness and concentration while conserving total water content. We document how this novel sea ice constraining method reaches specific targets, enhances surface turbulent heat flux responses to sea ice loss, and induces tropospheric warming for both polar regions.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2023

Thermally Significant Fluid Seepage Through Thick Sediment on the Juan de Fuca Plate Entering the Cascadia Subduction Zone

We use heat flux measurements colocated with seismic reflection profiles over a buried basement high on the Juan de Fuca plate ∼25 km seaward of the deformation front offshore Oregon to test for the presence of hydrothermal circulation in the oceanic crust. We also revisit heat flux data crossing a buried basement high ∼25 km seaward of the deformation front ∼150 km north, offshore Washington. Seafloor heat flux is inversely correlated with sediment thickness, consistent with vigorous hydrothermal circulation in the basement aquifer homogenizing temperatures at the top of the basement. Heat flux immediately above the summit of the basement highs is greater than expected solely from conduction. Fluid seepage at rates of ∼2.6–5.4 cm yr −1 in a 1–1.5 km-wide conduit through ∼800–1,300 m thick sediment sections above these basement highs can explain these observations. Observations of thermally significant fluid seepage through sediment >225 m thick on oceanic crust are unprecedented. High sediment permeability, high fluid overpressure in the basement, or a combination of both is required to drive fluid seepage at the observed rates. We infer that rapid seepage occurs because the basement highs rise above the low permeability basal sediment with their tops protruding into the base of high permeability Nitinat or Astoria Fan sediment. Seepage from basement highs penetrating into the submarine fans can affect the thermal state of crust entering the subduction zone.

58 GEOSCIENCES↗
DOE OSTI2018

Nature of the metal-insulator transition in few-unit-cell-thick LaNiO 3 films

The nature of the metal-insulator transition in thin films and superlattices of LaNiO 3 only a few unit cells in thickness remains elusive despite tremendous effort. Quantum confinement and epitaxial strain have been evoked as the mechanisms, although other factors such as growth-induced disorder, cation non-stoichiometry, oxygen vacancies, and substrate-film interface quality may also affect the observable properties of ultrathin films. Here we report results obtained for near-ideal LaNiO 3 films with different thicknesses and terminations grown by atomic layer-by-layer laser molecular beam epitaxy on LaAlO 3 substrates. We find that the room-temperature metallic behavior persists until the film thickness is reduced to an unprecedentedly small 1.5 unit cells (NiO 2 termination). Electronic structure measurements using X-ray absorption spectroscopy and first-principles calculation suggest that oxygen vacancies existing in the films also contribute to the metal-insulator transition.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Unit-cell-thick zeolitic imidazolate framework films for membrane application

Zeolitic imidazolate frameworks (ZIFs) are a subset of metal–organic frameworks with more than 200 characterized crystalline and amorphous networks made of divalent transition metal centres (for example, Zn 2+ and Co 2+ ) linked by imidazolate linkers. ZIF thin films have been intensively pursued, motivated by the desire to prepare membranes for selective gas and liquid separations. To achieve membranes with high throughput, as in ångström-scale biological channels with nanometre-scale path lengths, ZIF films with the minimum possible thickness—down to just one unit cell—are highly desired. However, the state-of-the-art methods yield membranes where ZIF films have thickness exceeding 50 nm. Here we report a crystallization method from ultradilute precursor mixtures, which exploits registry with the underlying crystalline substrate, yielding (within minutes) crystalline ZIF films with thickness down to that of a single structural building unit (2 nm). The film crystallized on graphene has a rigid aperture made of a six-membered zinc imidazolate coordination ring, enabling high-permselective H 2 separation performance. The method reported here will probably accelerate the development of two-dimensional metal–organic framework films for efficient membrane separation.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Thickness-dependent magnetic order in CrI 3 single crystals

Two-dimensional (2D) materials with intrinsic ferromagnetism offers unique opportunity to engineer new functionalities in nano-spintronics. One such material is CrI 3 , showing long-range magnetic order in monolayer with the Curie temperature (T c ) of 45 K. In this work, we study detailed evolution of magnetic transition and magnetic critical properties in response to systematic reduction in crystal thickness down to 50 nm. Bulk T c of 61 K is gradually suppressed to 57 K, however, the satellite transition at T*=45 K is observed layer-independent at fixed magnetic field of 1 kOe. The origin of T* is proposed to be a crossover from pinning to depinning of magnetic domain walls. The reduction of thickness facilitates a field-driven metamagnetic transition around 20 kOe with out-of-plane field, in contrast to the continuous changes with in-plane field. The critical analysis around Tc elucidates the mean-field type interactions in microscale-thick CrI 3 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Formation of Pseudomonas aeruginosa Biofilms in Full-thickness Scald Burn Wounds in Rats

Using Sprague-Dawley rats (350–450 g; n = 61) and the recently updated Walker-Mason rat scald burn model, we demonstrated that Pseudomonas aeruginosa readily formed biofilms within full-thickness burn wounds. Following the burn, wounds were surface-inoculated with P. aeruginosa in phosphate-buffered saline (PBS), while sterile PBS was used for controls. On post-burn days 1, 3, 7, and 11, animals were euthanized and samples collected for quantitative bacteriology, bacterial gene expression, complete blood cell counts, histology, and myeloperoxidase activity. Robust biofilm infections developed in the full-thickness burn wounds inoculated with 1 × 10 4 CFU of P. aeruginosa . Both histology and scanning electron microscopy showed the pathogen throughout the histologic cross-sections of burned skin. Quantigene analysis revealed significant upregulation of alginate and pellicle biofilm matrix genes of P. aeruginosa within the burn eschar. Additionally, expression of P. aeruginosa proteases and siderophores increased significantly in the burn wound environment. Interestingly, the host’s neutrophil response to the pathogen was not elevated in either the eschar or circulating blood when compared to the control burn. This new full-thickness burn biofilm infection model will be used to test new anti-biofilm therapies that may be deployed with soldiers in combat for immediate use at the site of burn injury on the battlefield.

Science & Technology - Other Topics↗
DOE OSTI2020

Author Correction: Thickness-dependent magnetic order in CrI3 single crystals

Two-dimensional (2D) materials with intrinsic ferromagnetism provide unique opportunity to engineer new functionalities in nano-spintronics. One such material is CrI3, showing long-range magnetic order in monolayer with the Curie temperature (Tc) of 45 K. Here we study detailed evolution of magnetic transition and magnetic critical properties in response to systematic reduction in crystal thickness down to 50 nm. Bulk Tc of 61 K is gradually suppressed to 57 K, however, the satellite transition at T * = 45 K is observed layer-independent at fixed magnetic field of 1 kOe. The origin of T * is proposed to be a crossover from pinning to depinning of magnetic domain walls. The reduction of thickness facilitates a field-driven metamagnetic transition around 20 kOe with out-of-plane field, in contrast to the continuous changes with in-plane field. The critical analysis around Tc elucidates the mean-field type interactions in microscale-thick CrI3.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Five-second STEM dislocation tomography for 300 nm thick specimen assisted by deep-learning-based noise filtering

Scanning transmission electron microscopy (STEM) is suitable for visualizing the inside of a relatively thick specimen than the conventional transmission electron microscopy, whose resolution is limited by the chromatic aberration of image forming lenses, and thus, the STEM mode has been employed frequently for computed electron tomography based three-dimensional (3D) structural characterization and combined with analytical methods such as annular dark field imaging or spectroscopies. However, the image quality of STEM is severely suffered by noise or artifacts especially when rapid imaging, in the order of millisecond per frame or faster, is pursued. Here we demonstrate a deep-learning-assisted rapid STEM tomography, which visualizes 3D dislocation arrangement only within five-second acquisition of all the tilt-series images even in a 300 nm thick steel specimen. The developed method offers a new platform for various in situ or operando 3D microanalyses in which dealing with relatively thick specimens or covering media like liquid cells are required.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Electrodeposition and analysis of thick bismuth films

Due to its unique physical and chemical properties, bismuth is an attractive candidate for a wide range of applications such as battery anodes, radiation shielding, and semiconductors, to name a few. This work presents the electrodeposition of mechanically stable and homogenous bismuth films at micron-scale thicknesses. A simple one-step electrodeposition process using either a pulse/reverse or direct current source yielded thick, homogenous, and mechanically stable bismuth films. Morphology, electrochemical behavior, adhesion, and mechanical stability of bismuth coatings plated with varying parameters were characterized via optical profilometry, cyclic voltammetry, electron microscopy, and tribology. Scratch testing on thick electroplated coatings (> 100 µm) revealed similar wear resistance properties between the pulse/reverse plated and direct current electroplated films. This study presents a versatile bismuth electroplating process with the possibility to replace lead in radiation shields with an inexpensive, non-toxic metal, or to make industrially relevant electrocatalytic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Effects of film thickness on electrochemical properties of nanoscale polyethylenedioxythiophene (PEDOT) thin films grown by oxidative molecular layer deposition (oMLD)

Poly(3,4-ethylene dioxythiophene) (PEDOT) has a high theoretical charge storage capacity, making it of interest for electrochemical applications including energy storage and water desalination. Nanoscale thin films of PEDOT are particularly attractive for these applications to enable faster charging. Recent work has demonstrated that nanoscale thin films of PEDOT can be formed using sequential gas-phase exposures via oxidative molecular layer deposition, or oMLD, which provides advantages in conformality and uniformity on high aspect ratio substrates over other deposition techniques. But to date, the electrochemical properties of these oMLD PEDOT thin films have not been well-characterized. In this work, we examine the electrochemical properties of 5–100 nm thick PEDOT films formed using 20–175 oMLD deposition cycles. We find that film thickness of oMLD PEDOT films affects the orientation of ordered domains leading to a substantial change in charge storage capacity. Interestingly, we observe a minimum in charge storage capacity for an oMLD PEDOT film thickness of ~30 nm (60 oMLD cycles at 150 °C), coinciding with the highest degree of face-on oriented PEDOT domains as measured using grazing incidence wide angle X-ray scattering (GIWAXS). Thinner and thicker oMLD PEDOT films exhibit higher fractions of oblique (off-angle) orientations and corresponding increases in charge capacity of up to 120 mA h g -1 . Electrochemical measurements suggest that higher charge capacity in films with mixed domain orientation arise from the facile transport of ions from the liquid electrolyte into the PEDOT layer. Greater exposure of the electrolyte to PEDOT domain edges is posited to facilitate faster ion transport in these mixed domain films. In conclusion, these insights will inform future design of PEDOT coated high-aspect ratio structures for electrochemical energy storage and water treatment.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simple powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High quality Y-type hexaferrite thick films for microwave applications by an economical and environmentally benign crystal growth technique

Thick barium hexaferrite Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (i.e., Zn{sub 2}Y) films having thicknesses of ∼100 μm were epitaxially grown on MgO (111) substrates using an environmentally benign ferrite-salt mixture by vaporizing the salt. X-ray diffraction pole figure analyses showed (00l) crystallographic alignment with little in plane dispersion confirming epitaxial growth. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 2.51 ± 0.1 kG with an out of plane magnetic anisotropy field H{sub A} of 8.9 ± 0.1 kOe. Ferromagnetic resonance linewidth, as the peak-to-peak power absorption derivative at 9.6 GHz, was measured to be 62 Oe. These properties demonstrate a rapid, convenient, cost-effective, and nontoxic method of growing high quality thick crystalline ferrite films which could be used widely for microwave device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electroplated L1{sub 0} CoPt thick-film permanent magnets

The fabrication and magnetic characterization of 15-μm-thick electroplated L1{sub 0} CoPt hard magnets with good magnetic properties is reported in this paper. Experimental study of the dependence of the magnets' properties on annealing temperature reveals that an intrinsic coercivity H{sub ci} = ∼800 kA/m (10 kOe), squareness >0.8, and energy product of >150 kJ/m{sup 3} are obtained for photolithographically patterned structures (250 μm × 2 mm stripes; 15 μm thickness) electroplated on silicon substrates and annealed in hydrogen forming gas at 700 °C. Scanning electron microscopy is used to inspect the morphology of both the as-deposited and annealed magnetic layers, and X-ray Diffractometer analysis on the magnets annealed at 700 °C confirm a phase transformation to an ordered L1{sub 0} CoPt structure, with a minor phase of hcp Co. These thick films are intended for microsystems/MEMS applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Synthesis and characterization of 10 nm thick piezoelectric AlN films with high c-axis orientation for miniaturized nanoelectromechanical devices

The scaling of piezoelectric nanoelectromechanical systems (NEMS) is challenged by the synthesis of ultrathin and high quality piezoelectric films on very thin electrodes. We report the synthesis and characterization of the thinnest piezoelectric aluminum nitride (AlN) films (10 nm) ever deposited on ultrathin platinum layers (2–5 nm) using reactive sputtering. X-ray diffraction, high-resolution transmission electron microscopy, and fast Fourier transform analyses confirmed the proper crystal orientation, fine columnar texture, and the continuous lattice structure within individual grains in the deposited AlN nanometer thick films. The average extracted d{sub 31} piezoelectric coefficient for the synthesized films is −1.73 pC/N, which is comparable to the reported values for micron thick and highly c-axis oriented AlN films. The 10 nm AlN films were employed to demonstrate two different types of optimized piezoelectric nanoactuators. The unimorph actuators exhibit vertical displacements as large as 1.1 μm at 0.7 V for 25 μm long and 30 nm thick beams. These results have a great potential to realize miniaturized NEMS relays with extremely low voltage, high frequency resonators, and ultrasensitive sensors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Strain relaxation of thick (11–22) semipolar InGaN layer for long wavelength nitride-based device

In this study, the properties of thick stress-relaxed (11–22) semipolar InGaN layers were investigated. Owing to the inclination of growth orientation, misfit dislocations (MDs) occurred at the heterointerface when the strain state of the (11–22) semipolar InGaN layers reached the critical point. We found that unlike InGaN layers based on polar and nonpolar growth orientations, the surface morphologies of the stress-relaxed (11–22) semipolar InGaN layers did not differ from each other and were similar to the morphology of the underlying GaN layer. In addition, misfit strain across the whole InGaN layer was gradually relaxed by MD formation at the heterointerface. To minimize the effect of surface roughness and defects in GaN layers on the InGaN layer, we conducted further investigation on a thick (11–22) semipolar InGaN layer grown on an epitaxial lateral overgrown GaN template. We found that the lateral indium composition across the whole stress-relaxed InGaN layer was almost uniform. Therefore, thick stress-relaxed (11–22) semipolar InGaN layers are suitable candidates for use as underlying layers in long-wavelength devices, as they can be used to control strain accumulation in the heterostructure active region without additional influence of surface roughness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Nonlinear optical absorption tuning in Bi{sub 3.15}Nd{sub 0.85}Ti{sub 3}O{sub 12} ferroelectric thin films by thickness

The tunability of nonlinear optical (NLO) absorption in Bi{sub 3.15}Nd{sub 0.85}Ti{sub 3}O{sub 12} (BNT) ferroelectric thin films was investigated through the open aperture Z-scan method with femtosecond laser pulses at the wavelength of 800 nm. NLO absorption responses of the BNT films were observed to be highly sensitive to the film thickness. As the film thickness increases from 106.8 to 139.7 nm, the NLO absorption changes from saturable absorption (SA) to reverse saturable absorption (RSA). When the film thickness further increases to 312.9 nm, the RSA effect is enhanced. A band-gap-related competition between the ground-state excitation and the two-photon absorption is responsible for the absorption switching behavior. Such a tunable NLO absorption can widen the photonic application of the BNT thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Strain-relaxation and critical thickness of epitaxial La 1.85 Sr 0.15 CuO 4 films

We report the thickness-dependent strain-relaxation behavior and the associated impacts upon the superconductivity in epitaxial La 1.85 Sr 0.15 CuO 4 films grown on different substrates, which provide a range of strain. We have found that the critical thickness for the onset of superconductivity in La 1.85 Sr 0.15 CuO 4 films is associated with the finite thickness effect and epitaxial strain. In particular, thin films with tensile strain greater than ~0.25% revealed no superconductivity. We attribute this phenomenon to the inherent formation of oxygen vacancies that can be minimized via strain relaxation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Interface effects in nanometer-thick yttrium iron garnet films studied by magneto-optical spectroscopy

The properties of nanometer-thick yttrium iron garnet (YIG) films are strongly influenced by interfaces. This work employs spectral ellipsometry (SE) and magneto-optic polar Kerr rotation (PKR) to characterize YIG films with thickness, t, from 6 nm to 30 nm grown on Gd 3 Ga 5 O 12 (GGG) substrates oriented parallel to (111) plane. The films display a surface roughness of 0.35 nm or lower. The analysis of the SE data at the photon energies of 1 eV < E < 6.5 eV provided the t and permittivity values. The PKR at 1.3 eV < E < 4.5 eV is reasonably explained with the optical model for the YIG film/GGG substrate system. Even better agreement is achieved by assuming a 1.07-nm-thick layer sandwiched between YIG and GGG that has Fe 3+ sublattice magnetization opposite to that in the YIG volume. This suggests the existence of antiferromagnetic coupling between the Gd 3+ and tetrahedral Fe 3+ .

36 MATERIALS SCIENCE↗