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At least 685 records · Page 38
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Cyclic and isothermal oxidation behavior on some Ni-Cr alloys

It is shown experimentally that 3 wt.% Si and 3 wt.% Mn additions can substantially improve the oxidation resistance of Ni-20Cr under both isothermal and cyclic conditions at 1100 and 1200 C. This is especially true in cyclic oxidation. In all cases, Si offers a greater improvement than Mn; however, the advantage of Si is substantial only during cyclic oxidation at 1200 C. The Si additions which lead to alloys of improved oxidation resistance suppress the formation of NiO and NiCr2O4 even under the most severe test conditions. The mechanism of improvement afforded by Mn appears to be the formation of MnCr2O4 at the expense of NiO and NiCr2O4.

Lowell, C. E.↗
NASA NTRS1974

Float zone processing in a weightless environment

Results are given for investigations into: (1) the physical limits which set the maximum practical diameters of Si crystals that can be processed by the float-zone method in a near weightless environment, and (2) the economic impact of large, space-produced Si crystals on the electronics industry. The stability of the melt is evaluated. Heat transfer and fluid flow within the melt as dependent on the crystal size and the degree and type of rotation imparted to the melt are studied. Methods of utilizing the weightless environment for the production of large, stress-free Si crystals of uniform composition are proposed. The economic effect of large size Si crystals, their potential applications, likely utilization and cost advantages in LSI, integrated circuits, and power devices are also evaluated. Foreseeable advantages of larger diameter wafers of good characteristics and the possibilities seen for greater perfection resulting from stress-free growth are discussed.

Fowle, A. A.↗
NASA NTRS1974

Atom movements occurring at solid metal-semiconductor interfaces

Solid metal-semiconductor interfaces often undergo chemical reaction at rather low temperatures, in some cases not much above room temperature. After some general discussion of these reactions, more detailed consideration is given to simple noncompound-forming systems, and, in particular, to the Si-Al, Ge-Al, and Si-Au systems. Diffusive transport of Si or Ge in these solid metallizations is very rapid, though the converse process, diffusion of metal in solid Si or Ge, is usually so slow as to be negligible. The interface reaction itself is less well understood but is becoming controllable in intrinsically favorable cases like Ge-Al and in other cases by more sophisticated means.

Mccaldin, J. O.↗
NASA NTRS1975

Interface effects in the dissolution of silicon into thin gold films

The dissolution of crystalline Si and amorphous Si substrates into thin films of evaporated Au was studied with an electron microprobe and scanning electron microscopy. The dissolution pattern was found to be nonuniform along the plane of the surface and dependent on the crystalline orientation of the Si substrate. The dissolution is greatly facilitated when a very thin layer of Pd is evaporated between the Si substrate and the Au film.

Sankur, H.↗
NASA NTRS1975

Exploratory study on microanalysis of thin films by backscattering techniques

Solid phase epitaxial growth of Si layers was studied by backscattering spectrometry for controllable electrical characteristics. Samples were fabricated by vacuum deposition on a thin layer of Sb before deposition of the amorphous Si layer. Analysis of the resulting SPEG layer showed that Sb was present in the SPEG layer of Si. The characteristic of the SPEG layer against the Si substrate was rectifying. A scanning microprobe picture of a cleaved sample established the presence of a depletion region more than 1 micron below the surface. Hall effect data indicated that the SPEG layer was n-type, with average free carrier concentration of about 10 to the 19th power cm/3 and average electron mobility of about 40 sq cm/Vs. SPEG with Pd silicide or Ni silicide transport layers showed fast initial transient growth regimes with slower growth in the steady state regimes.

Mayer, J. W.↗
NASA NTRS1976

Chemical vapor deposition growth

The chemical vapor deposition (CVD) method for the growth of Si sheet on inexpensive substrate materials is investigated. The objective is to develop CVD techniques for producing large areas of Si sheet on inexpensive substrate materials, with sheet properties suitable for fabricating solar cells meeting the technical goals of the Low Cost Silicon Solar Array Project. Specific areas covered include: (1) modification and test of existing CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using standard and near-standard processing techniques.

Ruth, R. P.↗
NASA NTRS1975

Interstellar absorption lines toward gamma Arae

The available data on interstellar absorption lines in the spectrum of gamma Ara observed from the ground and with the Copernicus telescope have been analyzed to give column densities of various ion stages of H, C, N, O, Na, Mg, Si, P, S, Ar, Ca, Mn, and Fe. The element abundances with respect to H nuclei in H I regions are similar to the values for zeta Oph, with depletions relative to the sun tending to increase with increasing condensation temperature. For example, toward gamma Ara, Fe is depleted by a factor of 50; Mg, Si, and Mn by about 10; and S, P, and N little or none. Interstellar Si IV and probably S IV appear stronger than in most other stars, but still their low ratios to Si III and S III suggest that soft X-rays and low-energy cosmic rays are not important sources of ionization. The width of the O VI lines and the absence of N V have been interpreted as evidence for a collisionally ionized region with a temperature between 300,000 and 700,000 K containing at least 0.0004 of the total interstellar column density.

Morton, D. C.↗
NASA NTRS1976

Float-zone processing in a weightless environment

The results were reported of investigations to: (1) test the validity of analyses which set maximum practical diameters for Si crystals that can be processed by the float zone method in a near weightless environment, (2) determine the convective flow patterns induced in a typical float zone, Si melt under conditions perceived to be advantageous to the crystal growth process using flow visualization techniques applied to a dimensionally scaled model of the Si melt, (3) revise the estimates of the economic impact of space produced Si crystal by the float zone method on the U.S. electronics industry, and (4) devise a rational plan for future work related to crystal growth phenomena wherein low gravity conditions available in a space site can be used to maximum benefit to the U.S. electronics industry.

Fowle, A. A.↗
NASA NTRS1977

The chemical composition of the cores of the terrestrial planets and the moon

Using models of the quasi-chemical theory of solutions, the activity coefficients of silicon are calculated in the melts Fe-Si, Ni-Si, and Fe-Ni-Si. The calculated free energies of solution of liquid nickel and silicon in liquid iron in the interval 0 to 1400 kbar and 1500 to 4000 K, shows that Fe-Ni-Si alloy is stable under the conditions of the outer core of the earth and the cores of the terrestrial planets. The oxidation-reduction conditions are studied, and the fugacity of oxygen in the mantles of the planets and at the core-mantle boundary are calculated. The mechanism of reduction of silicon is analyzed over a broad interval of p and T. The interaction between the matter of the core and mantle is studied, resulting in the extraction of silicon from the mantle and its solution in the material of the core. It is concluded that silicon can enter into the composition of the outer core of the earth and Venus, but probably does not enter into the composition of the cores of Mercury, Mars, and the moon, if in fact the latter possesses one.

Kuskov, O. L.↗
NASA NTRS1976

Production of solar-grade silicon from purified metallurgical silicon

The long-term goal of this work is to produce silicon of solar-grade quality at 3 x 10 to the 6th kg/y for less than $10/kg by, or before 1986. The approach is to improve and expand upon the technology used today to commercially produce metallurgical-grade silicon (MG-Si). This is currently being accomplished by using purer raw materials in the arc furnace process for producing MG-Si, by upgrading the furnace itself, and by unidirectionally solidifying the molten silicon exiting the furnace. Solar cells fabricated from partially purified MG-Si have shown average AM0 efficiencies in the range of 9-11%. Since further MG-Si purification yet remains possible, fabrication of cells of considerably higher conversion efficiency is deemed feasible.

Hunt, L. P.↗
NASA NTRS1978

On the theory of silicon spectra in O and B stars

Results of a previous calculation of a grid of predicted line profiles for 36 multiplets of Si II, III, and IV over a range of model atmospheres corresponding roughly to B0-B5 in spectral type and III-IV in luminosity class are analyzed and applied to observed spectra. The overall properties of the grid of Si line equivalent widths are reviewed, the diagnostic capability of this grid is discussed, and some results are presented for the parameters of 11 B stars derived from observed Si lines. The general fit of the predictions to the observations is evaluated, and test calculations are performed to examine the effect of varying a number of important parameters. Some systematic trends in the computational results are noted which can be expressed as phenomenological 'laws'. Special attention is given to problems arising from non-LTE effects as well as to the self-consistency of analytical results obtained from unblanketed models. It is found that the Si line calculations yield good agreement in two tests for main-sequence stars between B0 and B2, but both tests give somewhat negative results for spectral types later than B2.

Kamp, L. W.↗
NASA NTRS1978

OSO 8 observations of wave propagation in the solar chromosphere and transition region

The University of Colorado instrument on OSO 8 has been used to observe relative phases of the 300-s intensity variation between the temperature-minimum region and several emission lines formed in the solar chromosphere and chromosphere-corona transition region. The lines used are due to Fe II, Si II, C II, Si IV, and C IV. The scattered light in the spectrograph, which originates almost entirely in the spectral region between 1700 and 1900 A, was used as a probe of the temperature-minimum region. The lines of Fe II, Si II, and C II show almost identical delays of approximately 30 s relative to the temperature minimum, while the intensity oscillations of the lines of Si IV and C IV appear to lead the temperature-minimum intensity oscillations by about 10 s.

Chipman, E. G.↗
NASA NTRS1979

Development of a Model and Computer Code to Describe Solar Grade Silicon Production Processes

The program aims at developing mathematical models and computer codes based on these models, which allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon. The major interest is in collecting silicon as a liquid on the reactor walls and other collection surfaces. Two reactor systems are of major interest, a SiCl4/Na reactor in which Si(l) is collected on the flow tube reactor walls and a reactor in which Si(l) droplets formed by the SiCl4/Na reaction are collected by a jet impingement method. During this quarter the following tasks were accomplished: (1) particle deposition routines were added to the boundary layer code; and (2) Si droplet sizes in SiCl4/Na reactors at temperatures below the dew point of Si are being calculated.

Srivastava, R.↗
NASA NTRS1979

Development of SiAlON materials

Cold pressing and sintering techniques were used to produce ceramic test specimens in which the major phase was either Si3N4 or a solid solution having the beta Si3N4 structure. Additional components were incorporated to promote liquid phase sintering. Glass and/or crystalline phase were consequently retained in boundaries between Si3N4 grains which largely determined the physical properties of the bodies. Systems investigated most extensively included R-Si-Al-O-N (R = rare earth element) Zr-Si-Al-O-N, Y-Si-Be-O-N, and R1-R2-Si-O-N. Room temperature and 1370 C modulus of ruptured, 1370 C creep, and oxidation behavior are discussed in terms of phase relationships in a parent quinery, and relavent oxide systems.

Layden, G. K.↗
NASA NTRS1978

Isotopic fractionation of silicon in Allende inclusions

The variations of Si-30/Si-28 and Si-29/Si-28 in Allende inclusions are large, and are due predominantly to mass-dependent fractionation effects. Gas-soild or gas-liquid condensation processes at high temperatures have sufficiently large fractionation factors to account for the heavy-isotope enrichments in coarse-grained inclusions. Heavy isotope depletions are found in some Allende samples, and apparently result from a late-stage condensation. Thus, the silicon isotopic compositions may be useful for determining the sequence of events in forming the Allende meteorite. The peculiar Allende inclusion, Cl, has a very large mass-fractionated enrichment of Si-30/Si-28, and in addition, perhaps a small nuclear enrichment of Si-29. Olivine from the unusual pallasite, Eagle Station, has normal silicon isotope abundances even though it has a large O-16 excess.

Clayton, R. N.↗
NASA NTRS1980

The role of P2O5 in silicate melts

Phase equilibria data in the systems SiO2-P2O5, P2O5-M(x)O(y), and P2O5-M(x)O(y)-SiO2 are employed in conjunction with chromatographic and spectral data to investigate the role of P2O5 in silicate melts. P2O5 depolymerizes pure SiO2 melts by entering the network as a four-fold coordinated cation, but polymerizes melts in which an additional metal cation other than silicon is present. In this complex system P2O5 acts to increase phase separation by further enrichment of the high charge density cations Ti, Fe, Mg, Mn, Ca, in the ferrobasaltic liquid. The dual behavior of P2O5 is explained in a model which requires complexing of phosphate anions and metal cations in the melt. This interaction destroys Si-O-M-O-Si bonds polymerizing the melt. The higher concentration of Si-O-M-O-Si bond complexes in immiscible ferrobasaltic liquids relative to their conjugate immiscible granite liquids explains the partitioning of P2O5 into the ferrobasaltic liquid.

Ryerson, F. J.↗
NASA NTRS1980

GaAs solar cells for space applications

GaAs solar cells offer substantial advantages for space photovoltaic power over Si solar cells in the areas of efficiency, elevated temperature operation, and radiation damage stability. A mission cost comparison is made for GaAs and Si solar cells. For Si cell arrays, the total mission cost is found to be a minimum for a solar concentration of 2.9. For GaAs, modes of operation and construction are investigated. Modes having lower mission costs than the minimum Si mission cost are defined. These include higher concentrations, lightweight cells, and simultaneous power generation and annealing. The technological progress necessary for GaAs to operate in these modes is identified.

Conway, E. J.↗
NASA NTRS1980

The ultraviolet spectrum of the T Tauri star RW Aurigae

Ultraviolet spectra of the T Tauri star RW Aurigae have been obtained with the International Ultraviolet Explorer. Emission lines include Mg II, Fe II, Cr II, Si I, Si II, Si III, Si IV, C II, C IV, and L alpha. The spectrum roughly resembles the solar chromospheric spectrum, but the surface fluxes are 200 times greater. N V and He II appear to be absent, a possible indication of either an extended chromosphere cooled by mass loss or an optically thick, hot shocked region. The ultraviolet excess in RW Aur is strong, consistent with Balmer continuum emission. The observed continuum may be used to set limits on the type and amount of extinction affecting the star.

Imhoff, C. L.↗